Full Color Leadless Chip LED Device LT1W92A 3030 Size, 1.1mm Thickness, MID* Type Full Color Leadless Chip LED Device LT1W92A(Under Development) ■ Outline Dimensions (Unit : mm) ■ Radiation Diagram (Ta=25˚C) 3.0 2.6 1.1 3 Red 2.6 3.0 0.4 -40˚ 0.7 2 -60˚ Recommended PWB pattern for soldering 0.5 0.5 1.2 1.2 0.5 1.2 Soldering area -80˚ Device center +60˚ 40 20 +80˚ [Cathode] -20˚ -40˚ (0.9) Black print 1.Plating area Resist 2.Pin connections 4 3 1 Anode(Blue) (0.9) 2 Anode(Yellow-green) -60˚ 3 Cathode 4 Anode(Red) 1 2 -80˚ 0˚ +20˚ 100 Relative luminous intensity(%) 1.2 60 X 0.5 1.2 (0.9) +40˚ Yellow-green 80 [Anode] 0.4 +20˚ 100 Black print 1 0˚ -20˚ Colorless transparency Relative luminous intensity(%) 4 +40˚ Blue 80 60 +60˚ 40 20 +80˚ 3.Unspecified tolerance:±0.2 *MID:Molded Interconnection Device X ( ■ Absolute Maximum Ratings Model No. Radiation color Radiation material Power dissipation Forward current Peak forward current P*1 IF IFM*2 (mW) (mA) (mA) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*3 (V) (˚C) (˚C) (˚C) DC Pulse Blue -30 to +85 -40 to +100 GaN on SiC 200 30 100 0.67 1.33 5 -30 to +85 -40 to +100 LT1W92A Yellow-green GaP 84 30 50 0.40 0.67 5 -30 to +85 -40 to +100 Red GaAsP on GaP 84 30 50 0.40 0.67 5 *1 The value is specified under the condition that either color is lightened separately. When all diodes are lightened simultaneously, the power dissipation of each diode should be less than 30% of the value specified in this table. *2 Duty ratio=1/10, Pulse width=0.1ms *3 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page. ■ Electro-optical Characteristics Radiation Lens Model No. color type Blue Colorless LT1W92A Yellow-green transparency Red Forward voltage VF(V) TYP 4.4 2.1 2.0 MAX 5.6 2.8 2.8 ) 260 260 260 (Ta=25˚C) Peak emission wavelength IF λp(nm) (mA) TYP 430 20 565 20 635 20 Luminous intensity IF IV(mcd) (mA) TYP 8.1 20 32.0 20 16.0 20 Spectrum radiation bandwidth IF ∆λ(nm) (mA) TYP 70 20 30 20 35 20 Reverse current VR IR(µA) (V) MAX 10 4 10 4 10 4 Page for characteristics (MHZ) diagrams ---1 ---1 ---1 Terminal capacitance Ct(pF) TYP 50 35 20 ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. (Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/) (Notice) 107