® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a REVISION HISTORY Revision Rev. 1.a Description Initial Issue Issue Date Jul.15.2009 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 4μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Green package available Package : 32-pin 400 mil TSOP-II The LY62W5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62W5128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62W5128 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY62W5128 LY62W5128(E) LY62W5128(I) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range Speed 2.7 ~ 5.5V 2.7 ~ 5.5V 2.7 ~ 5.5V 55ns 55ns 55ns FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A18 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT Power Dissipation Standby(ISB1TYP.) Operating(Icc,TYP.) 4µA 30mA 4µA 30mA 4µA 30mA 512Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a PIN CONFIGURATION 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE# A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE# A2 10 23 A10 A1 11 22 CE# A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 VSS 16 17 DQ3 LY62W5128 A18 TSOP-II Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L SUPPLY CURRENT ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *1 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. ICC CE# = 0.2V, II/O = 0mA other pins at 0.2V or VCC - 0.2V Average Operating Power supply Current Cycle time = 1µs ICC1 CE# = 0.2V, II/O = 0mA other pins at 0.2V or VCC - 0.2V Standby Power CE# ≧VCC - 0.2V or CE2≦0.2V ISB1 Supply Current Others at 0.2V or VCC - 0.2V Notes: MIN. TYP. 2.7 3.0 0.7*Vcc - 0.2 -1 - *3 MAX. 5.5 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.4 - - 0.4 V V - 30 60 mA - 4 10 mA - 4 50 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 2. Over/Undershoot specifications are characterized, not 100% tested. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 4. 25µA for special request Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 *4 µA ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -2mA/4mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH (2) WRITE CYCLE PARAMETER SYM. Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* LY62W5128-55 MIN. MAX. 55 55 55 30 10 5 20 20 10 - UNIT LY62W5128-55 MIN. MAX. 55 50 50 0 45 0 25 0 5 20 UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 High-Z ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#, CE# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time SYMBOL TEST CONDITION VDR CE# ≧ VCC - 0.2V VCC = 1.5V IDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V Other pins at 0.2V or VCC-0.2V See Data Retention tCDR Waveforms (below) Recovery Time tRC* = Read Cycle Time tR MIN. 1.5 TYP. - MAX. 5.5 UNIT V - 2 30 µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY62W5128 Rev. 1.a 512K X 8 BIT LOW POWER CMOS SRAM PACKAGE OUTLINE DIMENSION 32-pin 400mil TSOP-Ⅱ Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.a ORDERING INFORMATION LY62W5128 U V - WW XX Y Z Z : Packing Type Blank : Tube or Tray T : Tape Reel Y : Temperature Range Blank : (Commercial) 0°C ~ 70°C E : (Extended) -20°C ~ +80°C I : (Industrial) -40°C ~ +85°C XX : Power Type LL : Ultra Low Power WW : Access Time(Speed) V : Lead Information L : Green Package U : Package Type W : 32-pin 400 mil TSOP-II Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY62W5128 Rev. 1.a 512K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10