STMICROELECTRONICS M54HC30

M54HC30
RAD-HARD 8-INPUT NAND GATE
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HIGH SPEED:
tPD = 13ns (TYP.) at VCC = 6V
LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 30
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9201-110
DILC-14
FPC-14
ORDER CODES
PACKAGE
FM
EM
DILC
FPC
M54HC30D
M54HC30K
M54HC30D1
M54HC30K1
The internal circuit is composed of 5 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
DESCRIPTION
The M54HC30 is an high speed CMOS 8-INPUT
NAND GATE fabricated with silicon gate C2MOS
technology.
PIN CONNECTION
April 2004
1/8
M54HC30
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
SYMBOL
NAME AND FUNCTION
1, 2, 3, 4, 5, A, B, C, D, E,
6, 11, 12
F, G, H,
9, 10, 13
NC
8
Y
7
GND
VCC
14
Data Inputs
Not connected
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
2/8
A
B
C
D
E
F
G
H
Y
L
X
X
X
X
X
X
X
H
X
L
X
X
X
X
X
X
H
X
X
L
X
X
X
X
X
H
X
X
X
L
X
X
X
X
H
X
X
X
X
L
X
X
X
H
X
X
X
X
X
L
X
X
H
X
X
X
X
X
X
L
X
H
X
X
X
X
X
X
X
L
H
H
H
H
H
H
H
H
H
L
M54HC30
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
-0.5 to +7
V
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
V
DC Input Diode Current
± 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 25
mA
± 50
mA
VI
DC Input Voltage
VO
DC Output Voltage
IIK
ICC or IGND DC VCC or Ground Current
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
V
300
mW
-65 to +150
°C
265
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
VI
Input Voltage
VO
Output Voltage
Top
Operating Temperature
Input Rise and Fall Time
tr, tf
Value
Unit
2 to 6
V
0 to VCC
V
0 to VCC
V
-55 to 125
°C
VCC = 2.0V
0 to 1000
ns
VCC = 4.5V
0 to 500
ns
VCC = 6.0V
0 to 400
ns
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M54HC30
DC SPECIFICATIONS
Test Condition
Symbol
VIH
VIL
VOH
VOL
II
ICC
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Value
TA = 25°C
VCC
(V)
Min.
2.0
4.5
6.0
2.0
4.5
6.0
Typ.
Max.
1.5
3.15
4.2
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
1.5
3.15
4.2
0.5
1.35
1.8
Max.
1.5
3.15
4.2
0.5
1.35
1.8
V
0.5
1.35
1.8
2.0
IO=-20 µA
1.9
2.0
1.9
1.9
4.5
IO=-20 µA
4.4
4.5
4.4
4.4
Unit
V
6.0
IO=-20 µA
5.9
6.0
5.9
5.9
4.5
IO=-4.0 mA
4.18
4.31
4.13
4.10
6.0
IO=-5.2 mA
5.68
2.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=20 µA
0.0
0.1
0.1
0.1
6.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=4.0 mA
0.17
0.26
0.33
0.40
6.0
IO=5.2 mA
0.18
0.26
0.33
0.40
6.0
VI = VCC or GND
± 0.1
±1
±1
µA
6.0
VI = VCC or GND
1
10
20
µA
5.8
5.63
V
5.60
V
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Symbol
Parameter
tTLH tTHL Output Transition
Time
tPLH tPHL Propagation Delay
Time
Value
TA = 25°C
VCC
(V)
Min.
2.0
4.5
6.0
2.0
4.5
6.0
Typ.
Max.
30
8
7
45
15
13
75
15
13
115
23
20
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
95
19
16
145
29
25
Unit
Max.
110
22
19
170
34
29
ns
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
VCC
(V)
Value
TA = 25°C
Min.
Typ.
Max.
10
CIN
Input Capacitance
5.0
5
CPD
Power Dissipation
Capacitance (note
1)
5.0
20
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
10
Unit
Max.
10
pF
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
4/8
M54HC30
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
5/8
M54HC30
DILC-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
2.1
22.54
0.083
0.100
a1
3.00
3.70
0.118
0.146
a2
0.63
0.88
1.14
0.025
0.035
0.045
B
1.82
2.03
2.39
0.072
0.080
0.094
b
0.40
0.45
0.50
0.016
0.018
0.020
b1
0.20
0.254
0.30
0.008
0.010
0.012
D
18.79
19.00
19.20
0.740
0.748
0.756
e
7.36
7.62
7.87
0.290
0.300
0.310
e1
2.54
0.100
e2
15.11
15.24
15.37
0.595
0.600
0.605
e3
7.62
7.87
8.12
0.300
0.310
0.320
F
7.11
7.75
0.280
I
0.305
3.70
K
10.90
L
1.14
1.27
0.146
12.1
0.429
1.5
0.045
0.476
0.050
0.059
0016173H
6/8
M54HC30
FPC-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
6.75
6.91
7.06
0.266
0.272
0.278
B
9.76
9.95
10.14
0.384
0.392
0.399
C
1.49
1.95
0.059
D
0.10
0.127
0.15
0.004
0.005
0.006
E
7.50
7.62
7.75
0.295
0.300
0.305
F
G
1.27
0.38
0.050
0.43
H
L
0.077
0.48
0.015
0.017
6.0
0.019
0.236
18.75
22.0
0.738
0.866
M
0.38
0.015
N
4.31
0.170
G
F
D
H
14
8
L
N
A
7
1
H
E
B
M
C
016029E
7/8
M54HC30
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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