EVALUATION KIT AVAILABLE MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output General Description The MAX15090/MAX15090A ICs are integrated solutions for hot-swap applications requiring the safe insertion and removal of circuit line cards from a live backplane. The devices integrate a hot-swap controller, 6mω power MOSFET, and an electronic circuit-breaker protection in a single package. The devices integrate an accurate current-sense circuitry and provide 220FA/A of proportional output current. The devices are designed for protection of 2.7V to 18V supply voltages. These devices implement a foldback current limit during startup to control inrush current lowering di/dt and keep the MOSFET operating under safe operating area (SOA) conditions. After the startup cycle is complete, on-chip comparators provide VariableSpeed/BiLevelK protection against short-circuit and overcurrent faults, and immunity against system noise and load transients. The load is disconnected in the event of a fault condition. The devices are factory calibrated to deliver accurate overcurrent protection with Q10% accuracy. During a fault condition, the MAX15090 latches off, while the MAX15090A enters autoretry mode. The devices feature an IN to OUT short-circuit detection before startup. The devices provide a power-MOSFET GATE pin to program the slew rate during startup by adding an external capacitor. The devices have overvoltage/ undervoltage input pins that can detect an overvoltage/ undervoltage fault and disconnect the IN from the OUT. Additional features include internal overtemperature protection, power-good output, and fault-indicator output. The MAX15090/MAX15090A are available in a 28-bump, 2.07mm x 3.53mm, power wafer-level package (WLP) and are rated over the -40°C to +85°C extended temperature range. Features S 2.7V to 18V Operating Voltage Range S 6mω (typ) Internal Power MOSFET S 12A (max) Load Current Capability S Current Reporting without Need for External RSENSE S Q10% Circuit-Breaker Threshold Accuracy S Adjustable Circuit-Breaker Current/Current-Limit Threshold S Programmable Slew-Rate Control S Variable-Speed Circuit-Breaker Response S Inrush Current Regulated at Startup with Foldback Implementation for di/dt Control S Thermal Protection S Overvoltage Protection S Power-Good and Fault Outputs S Latch-Off or Automatic Retry Options S Programmable Undervoltage Lockout S IN to OUT Short-Circuit Detection Applications RAID Systems Storage Bridge Bay Disk Drive Power Server I/O Cards Industrial Ordering Information appears at end of data sheet. For related parts and recommended products to use with this part, refer to www.maximintegrated.com/MAX15090.related. Typical Application Circuit appears at end of data sheet. VariableSpeed/BiLevel is a trademark of Maxim Integrated Products, Inc. For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com. 19-6480; Rev 1; 12/12 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Absolute Maximum Ratings VCC to GND............................................................-0.3V to +20V IN to GND...............................................................-0.3V to +20V OUT to GND................................................-0.3V to (VIN + 0.3V) GATE to OUT............................................................-0.3V to +6V CDLY, ISENSE to GND............................-0.3V to (VREG + 0.3V) EN, CB, UV, OV to GND..........................................-0.3V to +6V REG to GND.............................-0.3V to min (+6V, (VCC + 0.3V)) PG, FAULT to GND................................................-0.3V to +20V Continuous Power Dissipation (TA = +70NC) WLP (derate 23.8mW/NC above +70NC).....................1500mW Operating Temperature Range........................... -40NC to +85NC Junction Temperature......................................................+150NC Storage Temperature Range............................. -60NC to +150NC Lead Temperature (soldering, 10s).................................+300NC Soldering Temperature (reflow).......................................+260NC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Package Thermal Characteristics (Note 1) Junction-to-Ambient Thermal Resistance (qJA)...............42°C/W Junction-to-Case Thermal Resistance (qJC)......................7°C/W Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Thermal resistance can be lowered with improved board design. Electrical Characteristics (VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and TA = +25°C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLIES VCC Operating Range VCC 2.7 18 V IN Operating Range VIN 2.7 18 V VCC Supply Current ICC mA IN Supply Current IIN VCC Default Undervoltage Lockout VUVLO VCC Default UndervoltageLockout Hysteresis VUVLO_HYS VIN = 3V 0.5 0.75 RCB = 40.2kω, no load 5.1 6.2 RCB = 10kω, no load 1.4 1.8 2.5 2.65 VCC rising 2.35 0.1 mA V V No load, VCC > 4V 3.15 3.35 3.55 V VUV_TH VUV rising 1.21 1.23 1.25 V UV Turn-On Threshold Hysteresis VUV_HYS VUV falling OV Turn-On Threshold VOV_TH VOV rising OV Turn-On Threshold Hysteresis VOV_HYS VOV falling VEN_TH VEN rising REG Regulator Voltage VREG UV Turn-On Threshold EN Threshold EN Threshold Hysteresis Maxim Integrated VEN_HYS VEN falling 0.1 1.21 1.23 V 1.25 0.1 0.95 1 0.1 V V 1.05 V V 2 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output ELECTRICAL CHARACTERISTICS (continued) (VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and TA = +25°C.) (Note 2) PARAMETER OV, UV, EN Input Leakage Current CB Source Current SYMBOL ILEAK ITHCB_NORM CONDITIONS VOV = VUV = VEN = 0 to 5V MIN TYP -1 Power-on mode MAX UNITS +1 FA 12 FA CURRENT LIMIT Circuit-Breaker Accuracy (Note 3) ICB,TH Circuit-Breaker Accuracy Deviation Slow-Comparator Response Time (Note 4) tSCD Maximum Current Limit During Startup ILIM 10.85 12.06 13.27 RCB = 10kω 2.7 3 3.3 RCB = 10kω to 40.2kω, compared to nominal current-limit value -10 VIN = 12V RCB = 40.2kω +10 A % 0.6% overcurrent 2.7 ms 30% overcurrent 200 Fs ICB,TH A (see Figure 2) Fast-Comparator Threshold IFC_TH 1.5 x ICB,TH A Fast-Comparator Response Time tFCD 200 ns Minimum CB Voltage Reference During Foldback (Note 5) VTHCB_MIN VIN - VOUT > 10V, RCB = 40.2kω 60 mV Maximum CB Voltage Reference During Foldback (Note 5) VTHCB_MAX VIN - VOUT < 2V, RCB = 40.2kω 240 mV TIMING Startup Maximum Time Duration tSU 43 48 53 ms Autorestart Delay Time tRESTART Time Delay Comparator High Threshold VDLY_TH 1.85 2 2.15 V Time Delay Pullup Current IDLY 1.6 1.9 2.2 FA Output Short Detection at Startup tSHORT 10.8 12 13.2 ms 5.5 7.5 3.2 s MOSFET Total On-Resistance RON GATE Charge Current IGATE Maxim Integrated TA = +25°C TA = -40°C to +85°C 9 4.5 5.7 7 mω FA 3 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output ELECTRICAL CHARACTERISTICS (continued) (VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.3kω, and TA = +25°C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 0.4 V 1 FA OUTPUTS FAULT, PG Output Low Voltage VOL Low-impedance state, IFAULT = +5mA, IPG = +5mA FAULT, PG Output High Leakage Current IOH High-impedance state, VFAULT = 16V, VPG = 16V CURRENT REPORT ISENSE Full-Scale Current ISENSE Gain Ratio ISENSE Voltage Range 2.64 IISENSE ISENSE/IOUT VISENSE ISENSE Offset Error IISENSE_OFF ISENSE Gain Error IISENSE_ERROR VIN = 12V mA 220 FA/A 0 2.5 TA = +25°C -30 +30 TA = -40°C to +85°C -50 +50 TA = +25°C -2.5 -2.5 -4 +4 TA = -40°C to +85°C V FA % PG THRESHOLD PG Threshold VPG Measured at VOUT PG Assertion Delay tPG From VOUT > VPG and (VGATE - VIN) > 3V OUT to IN Short-Circuit Detection Threshold OUT Precharge Threshold 0.9 x VIN 12 16 V 20 ms VIOSHT Measured at VOUT 0.9 x VIN VPC Measured at VOUT 0.5 x VIN V TSD TJ rising +150 °C TJ falling 20 °C THERMAL SHUTDOWN Thermal Shutdown Thermal-Shutdown Hysteresis Note 2: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design. Note 3: 40.2kω is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. All devices are tested with10kω, the parameter specified at RCB = 40.2kω is guaranteed by bench characterization and correlation, with respect to the tested parameter at RCB = 10kω. The formula that describes the relationship between RCB and the circuit-breaker current threshold is: ICB = RCB/3333.3. Note 4: The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the overcurrent condition, the faster the response time. Note 5: Foldback is active during the startup phase so the internal power MOSFET operates within SOA. Maxim Integrated 4 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Typical Operating Characteristics (VIN = VCC = 2.7V to 18V, TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and TJ = +25°C.) (Note 3) 5.10 5.05 5.00 -15 -40 ON-RESISTANCE (mI) 35 60 85 8 6 4 2 14 RCB = 40kI VIN = 12V 12 RCB = 30kI 10 8 RCB = 20kI 6 RCB = 10kI 4 2 0 0 10 15 20 25 30 35 -40 40 -15 10 35 60 85 TEMPERATURE (°C) RCB (I) ON-RESISTANCE vs. TEMPERATURE TURN-ON WAVEFORM NORMAL TURN-OFF WAVEFORM MAX15090 toc05 VIN = 12V ILOAD = 1A MAX15090 toc03 10 TEMPERATURE (°C) MAX15090 toc04 7 10 VIN = 12V CIRCUIT-BREAKER THRESHOLD (A) 5.15 12 MAX15090 toc02 IN SUPPLY CURRENT (mA) VIN = 12V CIRCUIT-BREAKER THRESHOLD (A) MAX15090 toc01 5.20 CIRCUIT-BREAKER THRESHOLD vs. TEMPERATURE CIRCUIT-BREAKER THRESHOLD vs. CIRCUIT-BREAKER RESISTANCE IN SUPPLY CURRENT vs. TEMPERATURE MAX15090 toc06 0V VUV 2V/div 0V VUV 2V/div 0V VOUT 10V/div 0V VOUT 10V/div 0V VPG 10V/div 0V VPG 10V/div ILOAD 10A/div 0A 6 5 ILOAD = 6A 0A 4 -40 -15 10 35 60 85 10ms/div ILOAD = 6A ILOAD 10A/div 10ms/div TEMPERATURE (°C) Maxim Integrated 5 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Typical Operating Characteristics (continued) (VIN = VCC = 2.7V to 18V, TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 33.2kω, and TJ = +25°C.) (Note 3) UV RISING /FALLING THRESHOLD VOLTAGE vs. TEMPERATURE FAULT-SHUTDOWN WAVEFORM OVERLOAD (SHORT CIRCUIT) MAX15090 toc07 MAX15090 toc08 1.3 MAX15090 toc09 FAULT-SHUTDOWN WAVEFORM OVERLOAD (SLOW TRIP) 0V VOUT 10V/div 0V ILOAD 10A/div 0A VPG 10V/div 0V VFAULT 10V/div 0V ILOAD 10A/div 0A VPG 10V/div 0V VFAULT 10V/div 0V 1ms /div UV RISING/FALLING THRESHOLD (A) VIN = 12V VOUT 10V/div VUV RISING 1.3 1.2 VUV FALLING 1.2 1.1 -40 1ms/div -15 10 35 60 85 TEMPERATURE (°C) CIRCUIT-BREAKER THRESHOLD TIME vs. OVERCURRENT AUTORETRY FUNCTIONALITY MAX15090 toc10 VUV 1V/div 0V VOUT 5V/div 0A VOUT 10V/div 0V VPG 5V/div 0V ILOAD 10A/div VPG 10V/div 0V 0V VFAULT 10V/div 0V 10ms/div 1s/div CIRCUIT-BREAKER THRESHOD TIME (ms) MAX15090 toc11 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 MAX15090 toc12 PG ASSERTION DELAY VIN = 12V 0 5 10 15 20 25 30 OVERCURRENT (%) Maxim Integrated 6 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Bump Configuration TOP VIEW (BUMPS SIDE DOWN) MAX15090 MAX15090A 1 2 3 4 5 6 7 A ISENSE VCC IN OUT IN GATE CDLY B CB GND IN OUT IN OUT EN C GND GND IN OUT IN OUT FAULT D REG UV OV OUT IN OUT PG + WLP (2.07mm x 3.53mm) Bump Description BUMP NAME A1 ISENSE A2 VCC A3, A5, B3, B5, C3, C5, D5 IN A4, B4, B6, C4, C6, D4, D6 OUT Maxim Integrated FUNCTION Current-Sense Output. The ISENSE output sources a current that is proportional to the output current. Connect a resistor between ISENSE and GND to produce a scaled voltage. Power-Supply Input. Connect VCC to a voltage between 2.7V and 18V. Connect a Schottky diode (or 6ω resistor) from IN to VCC and a 1FF bypass capacitor to GND to guarantee full operation in the event VIN collapses during a strong short from OUT to GND. Supply Voltage Input. IN is connected to the drain of the internal 6mω MOSFET. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive kick transients in the case of fast output short-circuit to GND. Load Output. Source of the internal power MOSFET. 7 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Bump Description (continued) BUMP NAME FUNCTION A6 GATE GATE of Internal MOSFET. During startup, a 5.7FA current is sourced to enhance the internal MOSFET with a 10V/ms slew rate. Connect an external capacitance from GATE to GND to reduce the output slew rate during startup. A7 CDLY Enable Timer Input. Connect a capacitor between CDLY and GND to set a 1s/FF duration timeout delay. The EN input has to be pulled low before the timeout delay elapses, to prevent internal MOSFET shutdown after power-up. B1 CB B2, C1, C2 GND Current-Limit Threshold Set. Connect a resistor from CB to GND to set the circuit-breaker threshold. Maximum value of 40.2kω can be accepted for safe operation. Having the CB pin connected to GND sets the circuitbreaker threshold at 0A. Ground B7 EN Enable Input. Externally pulled up to logic-high state through a resistor normally connected to REG. The EN input must be pulled down (for at least 1ms) by the external circuit before a programmable timeout delay has elapsed, otherwise a shutdown occurs. The timeout timer starts counting when the internal MOSFET is turned on. Connect a capacitor between CDLY and GND to program the duration of the timeout delay. Connect EN to GND to disable this feature. C7 FAULT Fault Status Output. FAULT is an open-drain, active-low output. FAULT asserts low when an overcurrent or overtemperature condition triggers a shutdown. FAULT is disabled during startup. D1 REG Internal Regulator Output. Bypass to ground with a 1FF capacitor. Do not power external circuitry using the REG output (except a resistor > 50kω connected from REG to EN). D2 UV Active-High Enable Comparator Input. Pulling UV high enables the internal MOSFET to turn on. UV also sets the undervoltage threshold. See the Setting the Undervoltage Threshold section. D3 OV Overvoltage Enable Input. Pull OV high to turn off the internal MOSFET. Connect OV to an external resistive divider to set the overvoltage-disable threshold. See the Setting the Overvoltage Threshold section. D7 PG Power-Good Output. PG is an open-drain, active-high output. PG pulls low until the internal power MOSFET is fully enhanced. Detailed Description Enable Logic and Undervoltage/ Overvoltage-Lockout Threshold The MAX15090/MAX15090A ICs enable the output, as shown in Table 1. The devices are ready to drive the output when the VCC supply rises above the VUVLO threshold. The devices turn on the output when VCC > VUVLO, Maxim Integrated VUV is high (VUV > 1.23V) and VOV is low (VOV < 1.23V). The devices turn off the output when VUV falls below (1.23V - VUV_HYS) or VOV rises above 1.23V. An external resistive divider from IN to UV, OV, and ground provide the flexibility to set the undervoltage/overvoltage-lockout threshold to any desired level between VUVLO and 18V. See Figure 1 and the Setting the Undervoltage Threshold and Setting the Overvoltage Threshold sections. 8 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Table 1. Output Enable Truth Table POWER SUPPLY PRECISION ANALOG INPUTS OUT VCC UV OV VCC > VUVLO VUV > VUV_TH VOV < VOV_TH On VCC < VUVLO X X Off X VUV < (VUV_TH - VUV_HYS) X Off X X VOV > VOV_TH Off X = Don’t care. VUV_TH and VOV_TH = 1.23V (typ). IN An internal 50ms timer starts counting when the devices enter the startup phase. The devices complete the startup phase and enter normal operation mode if the voltage at OUT rises above the precharge threshold (0.9 x VIN) and (VGATE - VOUT) > 3V. An open-drain power-good output (PG) goes high-impedance 16ms after the startup successfully completes. MAX15090 MAX15090A R1 UV R2 1.23V The thermal-protection circuit is always active and the internal MOSFET immediately turned off when the thermal-shutdown threshold condition is reached. CONTROL LOGIC OV VariableSpeed/BiLevel Fault Protection R3 GND Figure 1. Undervoltage/Overvoltage-Threshold Setting Startup Once the device output is enabled, the device provides controlled application of power to the load. The voltage at OUT begins to rise at approximately 10V/ms default until the programmed circuit-breaker current level is reached, while the devices actively limit the inrush current at the circuit-breaker setting. An external capacitor connected to the GATE pin allows the user to program the slew rate to a value lower than the default. The inrush current can be programmed by selecting the appropriate value of RCB. During startup, a foldback current limit is active to protect the internal MOSFET to operate within the SOA (Figure 2). Maxim Integrated VariableSpeed/BiLevel fault protection incorporates comparators with different thresholds and response times to monitor the load current (Figure 3). Protection is provided in normal operation (after the startup period has expired) by discharging the MOSFET gate in response to a fault condition. During a fault condition, the MAX15090A enters autoretry mode, while the MAX15090 latches off (see the Autoretry and Latch-Off Fault Management section). Enable Input (EN) After a startup phase is successfully completed and the power-good output asserted, the EN input has to be pulled low (for at least 1ms) before the tDLY delay elapses. If the EN input is not pulled low before the tDLY elapses, then the devices turn off the internal MOSFET immediately and a new cycle is required for entering power-up mode. Connect a capacitor between CDLY and GND to set a 1s/FF duration timeout delay. If this function in is not implemented, connect EN to GND for proper operation. 9 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output IINRUSH RCB = 40.2kI 6A RCB = 10kI 1.5A 1A 0.25A 2V 10V VIN - VOUT Figure 2. Startup Inrush Current Foldback Characteristics SLOW COMPARATOR TURN-OFF TIME 2.7ms 200µs FAST COMPARATOR 200ns 0.6% OVERCURRENT 30% 50% OVERCURRENT OVERCURRENT OUT CURRENT Figure 3. VariableSpeed/BiLevel Response Maxim Integrated 10 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Charge Pump The devices also feature catastrophic short-circuit protection. During normal operation, if OUT is shorted directly to GND, a fast protection circuit forces the gate of the internal MOSFET to discharge quickly and disconnect the output from the input. During startup, the internal charge pump drives the GATE of the MOSFET with a fixed 5.7FA current to enhance the internal MOSFET with 10V/ms slew rate (typ). Connect an external capacitor (CGATE) from GATE to GND to reduce the output slew rate during startup. CGATE can be calculated according to the following formula: During a fault condition, the devices turn off the internal MOSFET, disconnecting the output from the input. The MAX15090A enters autoretry mode and restarts after a tRESTART time delay has elapsed. The MAX15090 latches off and remains off until the enable logic is cycled off and on after a tRESTART delay. The delay prevents the latch-off device to restart and operate with an unsafe power-dissipation duty cycle. An integrated charge pump provides the gate-drive voltage for the internal power MOSFET. The charge pump generates the proper gate drive voltage above VIN to fully enhance the internal power MOSFET and guarantee low RON operation during normal state conditions. CGATE = (IGATE x Dt)/DVGATE where IGATE is 5.7FA (typ), Dt is the desired slew-rate time, and DVGATE is the voltage at the gate of the internal MOSFET at turn-on. The slew rate of the OUT pin during startup can be controlled by IGATE/CGATE under light-load driving conditions, or by the limited inrush current and the external capacitive load, whichever is less. (DVOUT/Dt) = ILIM/CLOAD Circuit-Breaker Comparator and Current Limit The current that passes through the internal power MOSFET is compared to a circuit-breaker threshold. An external resistor between CB and GND sets this threshold according to the following formula: ICB = RCB/3333.3 where ICB is in amps and RCB (the resistor between CB and GND) is in ohms. The circuit-breaker comparator is designed so the load current can exceed the threshold for some amount of time before tripping. The time delay varies inversely with the overdrive above the threshold. The greater the overcurrent condition, the faster the response time, allowing the devices to tolerate load transients and noise near the circuit-breaker threshold. The maximum allowed external resistor value is 40.2kω, which corresponds to a 12A CB threshold setting. Programming the CB threshold to a value higher than 12A could cause unsafe operating conditions, resulting in damage to the devices. Maxim Integrated Autoretry and Latch-Off Fault Management Fault-Status Output (FAULT) FAULT is an open-drain output that asserts low when a current-limit or an overtemperature-fault shutdown occurs. FAULT remains low until the next startup cycle. FAULT is capable of sinking up to 5mA current when asserted. Power-Good (PG) Delay The devices feature an open-drain, power-good output that asserts after a tPG delay, indicating that the OUT voltage has reached (0.9 x VIN) voltage and (VGATE VOUT) > 3V. Internal Regulator Output (REG) The devices include a linear regulator that outputs 3.3V at REG. REG provides power to the internal circuit blocks of the devices and must not be loaded externally (except for a resistor > 50kω connected from REG to EN). REG requires at least a 1FF capacitor to ground for proper operation. Current Report Output (ISENSE) The ISENSE pin is the output of an accurate currentsense amplifier and provides a source current that is proportional to the load current flowing into the main switch. The factory-trimmed current ratio is set to 220FA/A. This produces a scaled voltage by connecting a resistor between ISENSE and ground. This voltage signal then goes to an ADC and provides digitized information of the current supplied to the powered system. 11 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Thermal Protection where VIN is the desired turn-on voltage for the output and VUV_TH is 1.23V. R1 and (R2 + R3) create a resistive divider from IN to UV. During normal operating conditions, VUV must remain above its 1.23V (typ) threshold. If VUV falls 100mV (VUV_HYS) below the threshold, the internal MOSFET turns off, disconnecting the load from the input. IN to OUT Short-Circuit Protection The devices also feature an independent overvoltageenable control (OV) for the internal MOSFET. The devices enter a thermal-shutdown mode in the event of overheating caused by excessive power dissipation or high ambient temperature. When the junction tem perature exceeds TJ = +150NC (typ), the internal thermalprotection circuitry turns off the internal power MOSFET. The devices recover from thermal-shutdown mode once the junction temperature drops by 20NC (typ). At startup, after all the input conditions are satisfied (UV, OV, VUVLO), the devices immediately check for an IN to OUT short-circuit fault. If VOUT is greater than 90% of VIN, the internal MOSFET cannot be turned on so FAULT is asserted and the MAX15090A enters autoretry mode in 3.2s, while the MAX15090 latches off. If VOUT is lower than 90% of VIN but greater than 50% of VIN, the internal MOSFET still cannot be turned on. No fault is asserted and the MOSFET can turn on as soon as VOUT is lower than 50% of VIN. Applications Information Setting the Undervoltage Threshold The devices feature an independent on/off control (UV) for the internal MOSFET. The devices operate with a 2.7V to 18V input voltage range and have a default 2.5V (typ) undervoltage-lockout threshold. The internal MOSFET remains off as long as VCC < 2.5V or VUV < VUV_TH. The undervoltage-lockout threshold is programmable using a resistive divider from IN to UV, OV, and GND (Figure 1). When VCC is greater than 2.7V and VUV exceeds the 1.23V (typ) threshold, the internal MOSFET turns on and goes into normal operation. Use the following equation to calculate the resistor values for the desired undervoltage threshold: VIN R1 = V UV_TH Maxim Integrated − 1 × (R2 + R3 ) Setting the Overvoltage Threshold When VOV exceeds the 1.23V (typ) threshold, the internal MOSFET turns off. The overvoltage-lockout threshold is pro grammable using a resistive divider from IN to UV, OV, and GND (Figure 1). Use the following equation to calculate the resistor values for the desired overvoltage threshold: V = (R1 + R2 ) IN VOV_TH − 1 × R3 where VIN is the desired turn-off voltage for the output and VOV_TH is 1.23V. R1 and (R2 + R3) create a resistive divider from IN to OV. During normal operating conditions, VOV must remain below its 1.23V (typ) threshold. If VOV rises above the VOV_TH threshold, the internal MOSFET turns off and disconnects the load from the input. Wafer-Level Packaging (WLP) Applications Information For the latest application details on WLP construction, dimensions, tape carrier information, PCB techniques, bump-pad layout, recommended reflow temperature profile, as well as the latest information on reliability testing results, refer to Application Note 1891: Wafer-Level Packaging (WLP) Applications Information, available at www.maximintegrated.com/wlp. 12 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Functional Diagram MPOW IN VCC OUT ILOAD /4545 IREF MS1 CHARGE PUMP ILOAD ISENSE FAULT MAX15090 MAX15090A IGATE GATE CB_SLOW_COMP IPD UV CONTROL LOGIC 2 x ISLEW 1.23V OV TEMP SENSE VCC LDO REGULATOR FAST_COMP STARTUP CONTROL AND FOLDBACK GATE GATE_OK REFERENCE GENERATOR PG 1.23V 0.9 x VIN 12µA 1.9µA CB CDLY 2V DLY CTRL EN Maxim Integrated REG GND 13 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Typical Application Circuit 12V IN RIN OUT TVS GATE CGATE VCC R1 CIN UV MAX15090 MAX15090A CB RCB RPG RFAULT PG REG R2 DC-DC REGULATOR 3.3V OUTPUT FAULT ISENSE CREG RISENSE OV A/D CONVERTER CDLY EN CCDLY R3 GND Chip Information Package Information Ordering Information For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PROCESS: BiCMOS PART TEMP RANGE PINPACKAGE FAULT MANAGEMENT MAX15090EWI+ -40NC to +85NC 28 WLP Latched Off MAX15090AEWI+ -40NC to +85NC 28 WLP Autoretry PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO. 28 WLP W282B3Z+1 21-0577 Refer to Application note 1891 +Denotes a lead(Pb)-free/RoHS-compliant package. Maxim Integrated 14 MAX15090/MAX15090A 2.7V to 18V, 12A, Hot-Swap Solution with Current Report Output Revision History REVISION NUMBER REVISION DATE DESCRIPTION PAGES CHANGED 0 9/12 Initial release — 1 12/12 Removed future product designation for the MAX15090A version 14 Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. Maxim Integrated 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000 © 2012 Maxim Integrated Products, Inc. 15 Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.