MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 1450 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Collector to Base Voltage Ic Collector Current 55 Volts 4.0 Volts 40 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature -40 to + 200(C + 200 (C ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Po Pin Pg h VSWR1 Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance BVces BVebo Hfe Rθjc Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Thermal Resistance TEST CONDITIONS MIN F =1030/1090 MHz Vcc = 45 Volts Pulse Width = 32)s Duty Factor = 2 % At Rated Power 400 Ic = 50 mA Ie = 30 mA Vce = 5 V, Ic = 1 A Tc = 25 oC 55 3.5 10 TYP MAX 90 6.5 35 UNITS Watts Watts dB % 10:1 Volts Volts 0.12 o C/W Issue September 22, 1995 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120