MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V 6 BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICBO Collector Cut-off Current VCB = 60V, IE = 0 hFE DC Current Gain * VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA V 0.01 35 50 75 100 40 µA 300 0.3 1.0 V V 1.2 2.0 V V VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE (sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8 pF NF Noise Figure IC = 100µA, VCE = 10V RS = 1KΩ, f = 1MHz 4 dB tON Turn On Time VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA 35 ns tOFF Turn Off Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 285 ns MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2005 Fairchild Semiconductor Corporation MMBT2222AK Rev. A 1 www.fairchildsemi.com MMBT2222AK NPN Epitaxial Silicon Transistor February 2005 MMBT2222AK NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 2 MMBT2222AK Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 3 MMBT2222AK Rev. A www.fairchildsemi.com MMBT2222AK NPN Epitaxial Silicon Transistor TRADEMARKS