MMBZ5221ELT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 3 Cathode Features • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Voltage Range − 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) Pb−Free Packages are Available 1 Anode MARKING DIAGRAM 3 1 SOT−23 CASE 318 STYLE 8 2 1 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: Bxx xx M G 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 Bxx M G G = Device Code = (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C RqJA 225 1.8 mW mW/°C 556 °C/W PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 6 1 ORDERING INFORMATION Device Package Shipping † MMBZ52xxELT1 SOT−23 3000/Tape & Reel MMBZ52xxELT1G MMBZ52xxELT3 MMBZ52xxELT3G SOT−23 3000/Tape & Reel (Pb−Free) SOT−23 10000/Tape & Reel SOT−23 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMBZ5221ELT1/D MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Device Marking Min Nom Max mA W W mA mA V MMBZ5221ELT1/T3, G BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMBZ5226ELT1/T3, G BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1 MMBZ5228ELT1/T3, G BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1 MMBZ5229ELT1/T3, G BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1 MMBZ5230ELT1/T3, G BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2 MMBZ5231ELT1/T3,G BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2 MMBZ5232ELT1/T3,G BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMBZ5234ELT1/T3,G BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMBZ5235ELT1/T3,G BF7 6.46 6.8 7.14 20 5 750 0.25 3 5 MMBZ5236ELT1/T3, G BF8 7.12 7.5 7.88 20 6 500 0.25 3 6 MMBZ5237ELT1/T3, G BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMBZ5239ELT1/T3, G BG2 8.65 9.1 9.55 20 10 600 0.25 3 7 MMBZ5240ELT1/T3,G BG3 9.50 10 10.50 20 17 600 0.25 3 8 MMBZ5242ELT1/T3,G BG5 11.40 12 12.60 20 30 600 0.25 1 9.1 MMBZ5243ELT1/T3, G BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMBZ5244ELT1/T3, G BG7 13.30 14 14.70 9 15 600 0.25 0.1 10 MMBZ5245ELT1/T3,G BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMBZ5246ELT1, G† BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMBZ5248ELT1/T3,G BH2 17.10 18 18.90 7 21 600 0.25 0.1 14 MMBZ5250ELT1/T3,G BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *The “G’’ suffix indicates Pb−Free package available. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 2 MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 5) Device* MMBZ5252ELT1, G† VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Marking Min Nom Max mA W W mA mA V BH6 22.80 24 25.20 5.2 33 600 0.25 0.1 18 MMBZ5253ELT1/T3 BH7 23.75 25 26.25 5 35 600 0.25 0.1 19 MMBZ5254ELT1/T3,G BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMBZ5255ELT1/T3, G BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMBZ5256ELT1/T3, G BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMBZ5257ELT1/T3,G BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMBZ5258ELT1/T3, G BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMBZ5262ELT1/T3, G BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 MMBZ5263ELT1/T3, G BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 MMBZ5265ELT1, G† BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47 5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *The “G’’ suffix indicates Pb−Free package available. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 3 MMBZ5221ELT1 Series 8 100 7 θ VZ , TEMPERATURE COEFFICIENT (mV/°C) θ VZ , TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES 6 5 4 VZ @ IZT 3 TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES VZ @ IZT 10 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMBZ5221ELT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (m A) TA = 25°C 100 BIAS AT 50% OF VZ NOM 100 10 1 +150°C 0.1 0.01 10 +25 °C 0.00 1 0.0001 1 1 −55 °C 0.00001 100 0 10 VZ, NOMINAL ZENER VOLTAGE (V) 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) 10 1 10 1 0.1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 0.01 12 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform http://onsemi.com 5 80 90 MMBZ5221ELT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−08 ISSUE AM NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 VIEW C MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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