MICROSEMI MSD100-16

MSD100
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID
100 Amp
Applications
y
y
y
y
Circuit
+
MSD
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Features
~
~
~
y
y
y
-
y
Three phase bridge rectifier
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
Module Type
TYPE
VRRM
VRSM
MSD100 – 08
MSD100 – 12
MSD100 – 16
MSD100 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
ID
IFSM
i2 t
Visol
Conditions
Values
Units
Tc=100℃
100
A
t=10mS Tvj =45℃
920
4200
A
A2 s
3000
V
-40 to 150
℃
-40 to 125
t=10mS Tvj =45℃
a.c.50Hz;r.m.s.;1min
Tvj
Mt
To terminals(M6)
5±15%
℃
Nm
Ms
Weight
To heatsink(M6)
Module
5±15%
230
Nm
g
Values
Units
Per diode
Module
0.9
0.03
℃/W
℃/W
Electrical Characteristics
Symbol
Conditions
Values
Units
T=25℃ IFM =300A
1.9
V
Tvj =25℃ VRD=VRRM
≤ 0.3
mA
Tvj =150℃ VRD=VRRM
≤ 5
mA
Tstg
Thermal Characteristics
Symbol
Conditions
Rth(j-c)
Rth(c-s)
VFM
IRD
MSD100-Rev 1
Dec, 2009
www.microsemi.com
1/3
MSD100
Performance Curves
300
A
250
W
Typ.
150
125
25℃
125℃
IF
Pvtot
0
0
0
VF
0.5
1.0
1.5
2.0 V
0
ID
50
100 A
Fig2. Power dissipation
Fig1. Forward Characteristics
1.0
℃/ W
1500
A
50Hz
Zth(j-C)
1000
0.5
500
0
0
0.001
0.01
0.1
1
10
100 S
1
10
cycles 100
Fig4. Max Non-Repetitive Forward Surge
Current
Fig3. Transient thermal impedance
200
A
160
120
80
40
ID
0
0 Tc
50
100
150°C
Fig5.Forward Current Derating Curve
MSD100-Rev 1
Dec, 2009
www.microsemi.com
2/3
MSD100
Package Outline Information
CASE-M3
Dimensions in mm
MSD100-Rev 1
Dec, 2009
www.microsemi.com
3/3