oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features ■ ■ ■ ■ ■ Applications Lead free versions available RoHS compliant (lead free version)* ESD protection > 25k volts Protects five unidirectional lines or four bidirectional lines Small SMT package ■ ■ ■ ■ Cell phones PDAs and notebooks Digital cameras MP3 players and GPS 2DAB-F6R - Integrated Passive & Active Device General Information The 2DAB-F6R device provides ESD protection for the I/O port of portable electronic devices such as cell phones, modems and PDAs. The device incorporates five TVS diodes which can be configured as five unidirectional lines or four bidirectional lines for interfacing to external lines. The ESD protection provided by the component enables an I/O port to withstand a minimum ±8 KV Contact / ±15 KV Air Discharge per the ESD test method specified in IEC 61000-4-2. The device measures 1.00 mm x 1.50 mm and is available in a 6 bump Flip Chip package intended to be mounted directly onto an FR4 printed circuit board. The Flip Chip device meets typical thermal cycle and bend test specifications without the use of an underfill material. SOLDER BUMPS SILICON DIE Electrical & Thermal Characteristics Electrical Characteristics (TA = 25 °C unless otherwise noted) Per TVS Diode Specification Capacitance @ 0 V 1 MHz Rated Standoff Voltage Breakdown Voltage @ 1 mA Clamping Voltage @ IP = 5 A tP = 8/20 µs @ IPP = 24 A tP = 8/20 µs Leakage Current @ 5 V ESD Protection: IEC 61000-4-2 Contact Discharge Air Discharge Surge Protection: IEC 61000-4-5 8/20 µs - Level 2 (Line - Gnd) 8/20 µs - Level 3 (Line - Line) Symbol Minimum Nominal Maximum Unit C VWM VBR 120 150 5.0 180 pF V V 9.5 11 10 V V µA 6.0 VC VC IR 1 ±8 ±15 kV kV 24 24 A A Thermal Characteristics (TA = 25 °C unless otherwise noted) Operating Temperature Range Storage Temperature Range Peak Pulse Power (tP = 8/20 µs) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TJ TSTG PPP -40 -55 25 25 +85 +150 250 °C °C W 2DAB-F6R - Integrated Passive & Active Device Mechanical Characteristics This is a silicon-based device and is packaged using chip scale packaging technology. Solder bumps, formed on the silicon die, provide the interconnect medium from die to PCB. The bumps are arranged on the die in a regular grid formation. The grid pitch is 0.5 mm and the dimensions for the packaged device are shown below. 0.490 - 0.524 (0.019 - 0.021) 0.15 - 0.005 DIA. (0.006 - 0.0002) A1 B1 0.50 (0.020) A2 B2 1.475 - 1.525 (0.058 - 0.060) 0.50 (0.020) A3 0.414 - 0.424 (0.016 - 0.017) B3 0.180 - 0.280 (0.007 - 0.011) 0.180 - 0.280 (0.007 - 0.011) 0.50 (0.020) 0.965 - 1.015 (0.038 - 0.040) DIMENSIONS = MILLIMETERS (INCHES) Reliability Data Reliability data is gathered on an ongoing basis for Bourns® Integrated Passive and Active Devices. “Package level” testing of the integrity of the solder joint is carried out on an independent Daisy-Chain test device. A 25-Pin Daisy Chain component is available from Bourns for this purpose (part number 2TAD-C25R). This is a 5 x 5 array featuring 0.5 mm pitch solder bumps. The Distance to Neutral Point (DNP) on that component is larger than that of the 2DAB-F6R and is thus deemed suitable for Thermal Cycle testing. “Silicon level” reliability performance is based on similarity to other integrated passive CSP devices from Bourns. Overshoot and Clamping Voltage Response 5 Volts per Division 35 25 15 5 -5 -90,000 ns 10,000 ns 110,000 ns ESD Test Pulse - 25 kilovolt, 1/30 ns (waveshape) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2DAB-F6R - Integrated Passive & Active Device PCB Design and SMT Processing Block Diagram The CSP device block diagram below includes the pin names and basic electrical connections associated with each channel. EXT1 Please consult the “Bourns Design Guide Using CSP” for notes on PCB design and SMT Processing. EXT4 How to Order GND EXT5 OR GND 2 DAB - F6R ____ Thinfilm Model Flip Chip No. of Solder Bumps EXT2 EXT3 Packaging Option R = Tape and Reel Packaged 5000 pcs. / 7 ” reel Terminations LF = Sn/Ag/Cu (lead free) Blank = Sn/Pb Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2DAB-F6R - Integrated Passive & Active Device Device Pin Out The pin-out for the device is shown below with the bumps facing up. EXT5 OR GND 1 EXT4 EXT1 2 3 B Pin Out A1 A2 A3 EXT3 A Function EXT1 GND EXT2 Pin Out B1 B2 B3 Function EXT4 EXT5 / GND EXT3 EXT2 GND Packaging The surface mount product is packaged in an 8 mm x 4 mm Tape and Reel format per EIA-481 standard. TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = MILLIMETERS (INCHES) 4.00 ± 0.10 (.16 ± .004) 0.30 ± 0.05 (.01 ± .002) 1.5 ± 0.1/-0 (.06 ± .004/-0) DIA. 2.00 ± 0.05 (.08 ± .002) R 1.75 ± 0.10 (.07 ± .004) 0.3 MAX. (0.01) 0.70 ± 0.1 (0.03 ± 0.004) 8.00 ± 0.30 (.31 ± .01) 1.70 ± 0.05 (.07 ± .002) 3.50 ± 0.05 (.14 ± .002) 1.12 ± 0.05 (.04 ± .002) 4.00 ± 0.10 (.16 ± .004) ORIENTATION OF COMPONENT IN POCKET R 0.25 TYP. (0.010) BACKSIDE FACING UP Reliable Electronic Solutions Asia-Pacific: TEL +886- (0)2 25624117 • FAX +886- (0)2 25624116 Europe: TEL +41-41 768 5555 • FAX +41-41 768 5510 The Americas: TEL +1-951 781-5492 • FAX +1-951 781-5700 www.bourns.com COPYRIGHT© 2004, BOURNS, INC. LITHO IN U.S.A. 08/04 e/IPA0411 2DAB-F6R REV. B, 1/05 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.