MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Boot Code Sector Architecture – T = Top Boot Sector – B = Bottom Boot Sector • Low VCC write inhibit is equal to or less than 3.2V • Package type: – 32-pin PLCC – 32-pin TSOP – 32-pin PDIP • Boot Code Sector Architecture – T=Top Boot Sector – B=Bottom Boot Sector • 20 years data retention • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption – 30mA maximum active current(5MHz) – 1uA typical standby current • Command register architecture – Byte Programming (7us typical) – Sector Erase (8K-Byte x1,4K-Byte x 2, 8K Bytex2, 32K-Bytex1, and 64K-Byte x1) • Auto Erase (chip & sector) and Auto Program – Automatically erase any combination of sectors with Erase Suspend capability. – Automatically programs and verifies data at speci fied address • Erase Suspend/Erase Resume – Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. GENERAL DESCRIPTION MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F001T/B uses a 5.0V ± 10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The MX29F001T/B is a 1-mega bit Flash memory organized as 128K bytes of 8 bits only MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F001T/B is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29F001T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F001T/B has separate chip enable (CE) and output enable (OE) controls. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F001T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. P/N: PM0515 1 REV. 2.1, JUN. 14, 2001 MX29F001T/B PIN DESCRIPTION: PIN CONFIGURATIONS VCC 1 32 WE NC A16 A15 PIN NAME A0~A16 Address Input Q0~Q7 Data Input/Output CE Chip Enable Input A11 WE Write Enable Input A2 OE OE Output Enable Input A1 A10 A0 CE VCC Power Supply Pin (+5V) Q7 GND Ground Pin A7 5 4 NC SYMBOL 30 29 A14 A6 A13 A5 A8 A4 A9 25 21 20 Q5 17 Q6 13 14 Q4 Q0 MX29F001T/B 9 Q3 A3 GND VCC WE NC A14 A13 A8 A9 A11 OE A10 CE Q7 Q6 Q5 Q4 Q3 Q1 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Q2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MX29F001T/B NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 32PLCC A12 32 PDIP TSOP (TYPE 1) A11 A9 A8 A13 A14 NC WE VCC NC A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MX29F001T/B 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 SECTOR STRUCTURE OE A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 A3 A16~A0 1FFFFH 1DFFFH 1CFFFH 1BFFFH 19FFFH 17FFFH (NORMAL TYPE) 0FFFFH 8 K-BYTE 4 K-BYTE 4 K-BYTE 8 K-BYTE 8 K-BYTE 32 K-BYTE 64 K-BYTE 00000H MX29F001T Sector Architecture A16~A0 1FFFFH 0FFFFH 64 K-BYTE 32 K-BYTE 07FFFH 05FFFH 03FFFH 02FFFH 01FFFH 8 K-BYTE 8 K-BYTE 4 K-BYTE 4 K-BYTE 8 K-BYTE 00000H MX29F001B Sector Architecture REV. 2.1, JUN. 14, 2001 P/N: PM0515 2 MX29F001T/B BLOCK DIAGRAM WRITE CE OE WE CONTROL PROGRAM/ERASE STATE INPUT LOGIC HIGH VOLTAGE MACHINE (WSM) LATCH A0-A16 BUFFER FLASH REGISTER ARRAY ARRAY Y-DECODER AND X-DECODER ADDRESS STATE MX29F001T/B Y-PASS GATE SOURCE HV COMMAND DATA DECODER SENSE AMPLIFIER PGM DATA HV COMMAND DATA LATCH PROGRAM DATA LATCH Q0-Q7 I/O BUFFER REV. 2.1, JUN. 14, 2001 P/N: PM0515 3 MX29F001T/B AUTOMATIC PROGRAMMING AUTOMATIC ERASE ALGORITHM The MX29F001T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm does not require the system to time out or verify the data programmed. The typical chip programming time of the MX29F001T/B at room temperature is less than 3.5 seconds. MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation. AUTOMATIC CHIP ERASE Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches addresses and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE . The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 3 second. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are internally controlled within the device. MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29F001T/B electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. AUTOMATIC SECTOR ERASE The MX29F001T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are internally con trolled by the device. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (include 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provides feedback to the user as to the status of the programming operation. REV. 2.1, JUN. 14, 2001 P/N: PM0515 4 MX29F001T/B TABLE1. SOFTWARE COMMAND DEFINITIONS Command First Bus Cycle Bus Cycle Addr Data Second Bus Cycle Addr Third Bus Cycle Fourth Bus Cycle Data Addr Data Addr Data Reset 1 Read 1 Read Silicon ID 4 555H AAH 2AAH 55H 555H 90H ADI DDI Chip Protect Verify 4 555H AAH 2AAH 55H 555H 90H (SA) 00H Fifth Bus Cycle Addr Data Sixth Bus Cycle Addr Data XXXH F0H RD RD X02H 01H Porgram 4 555H AAH 2AAH 55H 555H A0H PA PD Chip Erase 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H Sector Erase 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA Sector Erase Suspend 1 XXXH B0H Sector Erase Resume 1 XXXH 30H Unlock for chip 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 30H 555H 20H protect/unprotect Note: 1. ADI = Address of Device identifier;A1=0, A0 =0 for manufacture code, A1=0, A0 =1 for device code.(Refer to Table 3) DDI = Data of Device identifier : C2H for manufacture code, 18H/19H for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA. 2.PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address to the sector to be erased. 3.The system should generate the following address patterns: 555H or 2AAH to Address A0~A10. Address bit A11~A16=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated with A11~A16 in either state. 4.For chip protect verify operation : If read out data is 01H, it means the chip has been protected. If read out data is 00H, it means the chip is still not being protected. COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 1 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Either of the two reset command sequences will reset the device(when applicable). REV. 2.1, JUN. 14, 2001 P/N: PM0515 5 MX29F001T/B TABLE 2. MX29F001T/B BUS OPERATION Pins CE OE WE A0 A1 A6 A9 Q0 ~ Q7 L L H L L X VID(2) C2H L L H H L X VID(2) 18H/19H Read L L H A0 A1 A6 A9 DOUT Standby H X X X X X X HIGH Z Output Disable L H H X X X X HIGH Z Write L H L A0 A1 A6 A9 DIN(3) Chip Protect with 12V L VID(2) L X X L VID(2) X L VID(2) L X X H VID(2) X L L H X H X VID(2) Code(5) L H L X X L H X L H L X X H H X L L H X H X H Code(5) X X X X X X X HIGH Z Mode Read Silicon ID Manfacturer Code(1) Read Silicon ID Device Code(1) system(6) Chip Unprotect with 12V system(6) Verify Chip Protect with 12V system Chip Protect without 12V system (6) Chip Unprotect without 12V system (6) Verify Chip Protect/Unprotect without 12V system (7) Reset NOTES: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1. 2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V. 3. Refer to Table 1 for valid Data-In during a write operation. 4. X can be VIL or VIH. 5. Code=00H means unprotected. Code=01H means protected. 6. Refer to chip protect/unprotect algorithm and waveform. Must issue "unlock for chip protect/unprotect" command before "chip protect/unprotect without 12V system" command. 7. The "verify chip protect/unprotect without 12V sysytem" is only following "Chip protect/unprotect without 12V system" command. REV. 2.1, JUN. 14, 2001 P/N: PM0515 6 MX29F001T/B READ/RESET COMMAND SET-UP AUTOMATIC CHIP ERASE COMMANDS The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered. Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H. If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state. The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verification begin. The erase and verification operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system does not require to provide any control or timing during these operations. SILICON-ID-READ COMMAND Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access siganature codes by raising A9 to a high voltage. However, multiplexing high voltage onto address lines is not generally desired system design practice. When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verify command is required). The MX29F001T/B contains a Silicon-ID-Read operation to supplement traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,A0=VIL retrieves the manufacturer code of C2H. A read cycle with A1=VIL, A0=VIH returns the device code of 18H for MX29F001T,19H for MX29F001B. If the Erase operation was unsuccessful, the data on Q5 is "1"(see Table 4), indicating an erase operation exceed internal timing limit. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. TABLE 3. EXPANDED SILICON ID CODE Pins A0 A1 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code(Hex) Manufacture code VIL VIL 1 1 0 0 0 0 1 0 C2H Device code VIH VIL 0 0 0 1 1 0 0 0 18H VIH VIL 0 0 0 1 1 0 0 1 19H for MX29F001T Device code for MX29F001B Chip Protection Verification X VIH 0 0 0 0 0 0 0 1 01H (Protected) X VIH 0 0 0 0 0 0 0 0 00H (Unprotected) REV. 2.1, JUN. 14, 2001 P/N: PM0515 7 MX29F001T/B SECTOR ERASE COMMANDS ERASE SUSPEND The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system does not require to provide any control or timing during these operations. This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to the Read Memory Array, Erase Resume and Program commands. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verification begin. The erase and verification operations are complete when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system does not require to provide any control or timing during these operations. The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors. When using the Automatic Sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE, while the command(data) is latched on the rising edge of WE. Sector addresses selected are loaded into internal register on the sixth falling edge of WE. Each successive sector load cycle started by the falling edge of WE must begin within 30us from the rising edge of the preceding WE. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase (30H) or Erase Suspend (B0H) during the time-out period resets the derice to read mode. REV. 2.1, JUN. 14, 2001 P/N: PM0515 8 MX29F001T/B Table 4. Write Operation Status Status Q7 Q6 Q5 Q3 Byte Program in Auto Program Algorithm Q7 Toggle 0 N/A 0 Toggle 0 1 Data Data Data Data Q7 Toggle 0 N/A In Progress Auto Erase Algorithm Erase Suspended Mode Erase Suspend Read Erase Suspend Program (Non-Erase Suspended Sector) Byte Program in Auto Program Algorithm Exceeded Erase in Auto Erase Algorithm Time Limits Erase Suspended Mode Erase Suspend Program (Note1) Q7 Toggle 1 N/A 0 Toggle 1 1 Q7 Toggle 1 N/A (Non-Erase Suspended Sector) Note: 1. Performing successive read operations from any address will cause Q6 to toggle. REV. 2.1, JUN. 14, 2001 P/N: PM0515 9 MX29F001T/B ERASE RESUME read. The toggle bit is valid after the rising edge of the sixth WE pulse of the six write pulse sequences for chip/ sector erase. This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions.Another Erase Suspend command can be written after the chip has resumed erasing. The Toggle Bit feature is active during Automatic Program/ Erase algorithms or sector erase time-out.(see section Q3 Sector Erase Timer) SET-UP AUTOMATIC PROGRAM COMMANDS DATA POLLING-Q7 To initiate Automatic Program mode, A three-cycle command sequence is required. There are two "unlock" write cycles. These are followed by writing the Automatic Program command A0H. The MX29F001T/B also features Data Polling as a method to indicate to the host system that the Automatic Program or Erase algorithms are either in progress or completed. While the Automatic Programming algorithm is in operation, an attempt to read the device will produce the complement data of the data last written to Q7. Upon completion of the Automatic Program Algorithm an attempt to read the device will produce the true data last written to Q7. The Data Polling feature is valid after the rising edge of the fourth WE pulse of the four write pulse sequences for automatic program. Once the Automatic Program command is initiated, the next WE pulse causes a transition to an active programming operation. Addresses are latched on the falling edge, and data are internally latched on the rising edge of the WE pulse. The rising edge of WE also begins the programming operation. The system does not require to provide further controls or timings. The device will automatically provide an adequate internally generated program pulse and verify margin. While the Automatic Erase algorithm is in operation, Q7 will read "0" until the erase operation is competed. Upon completion of the erase operation, the data on Q7 will read "1". The Data Polling feature is valid after the rising edge of the sixth WE pulse of six write pulse sequences for automatic chip/sector erase. If the program opetation was unsuccessful, the data on Q5 is "1"(see Table 4), indicating the program operation exceed internal timing limit. The automatic programming operation is completed when the data read on Q6 stops toggling for two consecutive read cycles and the data on Q7 and Q6 are equivalent to data written to these two bits, at which time the device returns to the Read mode(no program verify command is required). The Data Polling feature is active during Automatic Program/Erase algorithm or sector erase time-out.(see section Q3 Sector Erase Timer) WRITE OPERATION STATUS TOGGLE BIT-Q6 The MX29F001T/B features a "Toggle Bit" as a method to indicate to the host system that the Auto Program/ Erase algorithms are either in progress or complete. While the Automatic Program or Erase algorithm is in progress, successive attempts to read data from the device will result in Q6 toggling between one and zero. Once the Automatic Program or Erase algorithm is completed, Q6 will stop toggling and valid data will be REV. 2.1, JUN. 14, 2001 P/N: PM0515 10 MX29F001T/B Q5 Exceeded Timing Limits Q3 Sector Erase Timer Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition. After the completion of the initial sector erase command sequence th sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted. If this time-out condition occurs during sector erase operation, it is specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occures during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. DATA PROTECTION If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). The MX29F001T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise. The time-out condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never completes the Automatic Algorithm operation. Hence, the system never reads a valid data on Q7 bit and Q6 never stops toggling. Once the Device has exceeded timing limits, the Q5 bit will indicate a "1". Please note that this is not a device failure condition since the device was incorrectly used. REV. 2.1, JUN. 14, 2001 P/N: PM0515 11 MX29F001T/B WRITE PULSE "GLITCH" PROTECTION CHIP UNPROTECT WITH 12V SYSTEM Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle. The MX29F001T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect completion to incorporate any changes in the code. LOGICAL INHIBIT To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH.(see Table 2) Refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. POWER SUPPLY DECOUPLING In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND. (Using a 10uF bulk capacitor connected for high current condition is available if necessary.) It is also possible to determine if the chip is unprotected in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs (Q0-Q7) for an unprotected sector. It is noted that all sectors are unprotected after the chip unprotect algorithm is completed. CHIP PROTECTION WITH 12V SYSTEM The MX29F001T/B features hardware chip protection. which will disable both program and erase operations. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID=12V) A6=VIL and CE=VIL.(see Table 2) Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Please refer to chip protect algorithm and waveform. CHIP PROTECTION WITHOUT 12V SYSTEM To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH. When A1=1, it will produce a logical "1" code at device output Q0 for the protected status. Otherwise the device will produce 00H for the unprotected status. In this mode, the address,except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes.(Read Silicon ID) CHIP UNPROTECT WITHOUT 12V SYSTEM It is also possible to determine if the chip is protected in the system by writing a Read Silicon ID command. Performing a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected status. POWER-UP SEQUENCE The MX29F001T/B also feature a hardware chip protection method in a system without 12V power suppply. The programming equipment do not need to supply 12 volts to protect all sectors. The details are shown in chip protect algorithm and waveform. The MX29F001T/B also feature a hardware chip unprotection method in a system without 12V power supply. The programming equipment do not need to supply 12 volts to unprotect all sectors. The details are shown in chip unprotect algorithm and waveform. The MX29F001T/B powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences. REV. 2.1, JUN. 14, 2001 P/N: PM0515 12 MX29F001T/B ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature 0oC to 70oC Storage Temperature -65oC to 125oC Applied Input Voltage -0.5V to 7.0V Applied Output Voltage -0.5V to 7.0V VCC to Ground Potential -0.5V to 7.0V A9&OE -0.5V to 13.5V NOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. NOTICE: Specifications contained within the following tables are subject to change. CAPACITANCE TA = 25oC, f = 1.0 MHz SYMBOL PARAMETER CIN1 MIN. TYP MAX. UNIT CONDITIONS Input Capacitance 8 pF VIN = 0V CIN2 Control Pin Capacitance 12 pF VIN = 0V COUT Output Capacitance 12 pF VOUT = 0V READ OPERATION DC CHARACTERISTICS TA = 0oC TO 70oC, VCC = 5V ± 10%(VCC = 5V ± 5% for 29F001T/B-55) SYMBOL PARAMETER ILI MIN. TYP MAX. UNIT CONDITIONS Input Leakage Current 1 uA VIN = GND to VCC ILO Output Leakage Current 10 uA VOUT = GND to VCC ISB1 Standby VCC current 1 mA CE = VIH 5 uA CE = VCC + 0.3V 30 mA IOUT = 0mA, f=5MHz 50 mA IOUT = 0mA, f=10MHz ISB2 ICC1 1 Operating VCC current ICC2 VIL Input Low Voltage -0.3(NOTE 1) 0.8 V VIH Input High Voltage 2.0 VCC + 0.3 V VOL Output Low Voltage 0.45 V IOL = 2.1mA VOH1 Output High Voltage(TTL) 2.4 V IOH = -2mA VOH2 Output High Voltage(CMOS) VCC-0.4 V IOH = -100uA VCC=VCC MIN NOTES: 1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. REV. 2.1, JUN. 14, 2001 P/N: PM0515 13 MX29F001T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%(TA=0oC to 70oC, 5V ± 5% for MX29F001T/B-55) 29F001T/B-70 29F001T/B-90 29F001T/B-12 MIN. MIN. SYMBOL PARAMETER MAX. tACC Address to Output Delay 70 tCE CE to Output Delay tOE OE to Output Delay tDF OE High to Output Float (Note1) 0 MAX. UNIT CONDITIONS 90 120 ns CE=OE=VIL 70 90 120 ns OE=VIL 40 40 50 ns CE=VIL 30 ns CE=VIL tOH Address to Output hold 0 ns CE=OE=VIL 20 0 MAX. 30 0 MIN. 0 0 29F001T/B-55 SYMBOL PARAMETER tACC MIN. MAX. UNIT CONDITIONS Address to Output Delay 55 ns CE=OE=VIL tCE CE to Output Delay 55 ns OE=VIL tOE OE to Output Delay 30 ns CE=VIL tDF OE High to Output Float (Note1) 0 20 ns CE=VIL tOH Address to Output hold 0 ns CE=OE=VIL TEST CONDITIONS: NOTE: • Input pulse levels: 0.45V/2.4V for 70ns max. ; 0V/3.0V for 1. tDF is defined as the time at which the output achieves the 55ns open circuit condition and data is no longer driven. • Input rise and fall times: < 10ns for 70ns max; < 5ns for 55ns • Output load: 1 TTL gate + 100pF (Including scope and jig) for 70ns max. ; 1 TTL gate + 30pF (Including scope and jig) for 55ns max. • Reference levels for measuring timing : 0.8V & 2.0V for 70ns max.; 1.5V for 55ns REV. 2.1, JUN. 14, 2001 P/N: PM0515 14 MX29F001T/B READ TIMING WAVEFORMS VIH ADD Valid A0~16 VIL tCE VIH CE VIL WE VIH OE VIH tACC VIL DATA Q0~7 tDF tOE VIL VOH tOH HIGH Z HIGH Z DATA Valid VOL COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%(VCC = 5V ± 5% for 29F001T/B-55) SYMBOL PARAMETER ICC1 (Read) Operating VCC Current MAX. UNIT CONDITIONS 30 mA IOUT=0mA, f=5MHz ICC2 50 mA IOUT=0mA, F=10MHz ICC3 (Program) 50 mA In Programming ICC4 (Erase) 50 mA In Erase mA CE=VIH, Erase Suspended ICCES MIN. TYP VCC Erase Suspend Current 2 NOTES: 1. VIL min. = -0.6V for pulse width < 20ns. 2. If VIH is over the specified maximum value, programming operation cannot be guranteed. 3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is the sum of ICCES and ICC1 or ICC2. 4. All current are in RMS unless otherwise noted. REV. 2.1, JUN. 14, 2001 P/N: PM0515 15 MX29F001T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%(VCC = 5V ± 5% for 29F001T/B-55) 29F001T/B-70 29F001T/B-90 29F001T/B-12 SYMBOL PARAMETER MIN. MAX. MIN. tOES OE setup time 0 0 0 ns tCWC Command programming cycle 70 90 120 ns tCEP WE programming pulse width 45 45 50 ns tCEPH1 WE programming pluse width High 20 20 20 ns tCEPH2 WE programming pluse width High 20 20 20 ns tAS Address setup time 0 0 0 ns tAH Address hold time 45 45 50 ns tDS Data setup time 30 45 50 ns tDH Data hold time 0 0 0 ns tCESC CE setup time before command write 0 0 0 ns tDF Output disable time (Note 1) tAETC Total erase time in auto chip erase 3(TYP.) 24 3(TYP.) 24 tAETB Total erase time in auto sector erase 1(TYP.) 8 1(TYP.) tAVT Total programming time in auto verify 7 7 tBAL Sector address load time 100 100 100 us tCH CE Hold Time 0 0 0 ns tCS CE setup to WE going low 0 0 0 ns tVLHT Voltge Transition Time 4 4 4 us tOESP OE Setup Time to WE Active 4 4 4 us tWPP Write pulse width for chip protect 10 10 10 us tWPP2 Write pulse width for chip unprotect 12 12 12 ms 30 210 MAX. MIN. 40 MAX. UNIT CONDITIONS 40 ns 3(TYP.) 24 s 8 1(TYP.) 8 s 210 7 210 us NOTES: 1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven. REV. 2.1, JUN. 14, 2001 P/N: PM0515 16 MX29F001T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 5% for MX29F001T/B-55 29F001T/B-55 SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS tOES OE setup time 0 ns tCWC Command programming cycle 70 ns tCEP WE programming pulse width 45 ns tCEPH1 WE programming pluse width High 20 ns tCEPH2 WE programming pluse width High 20 ns tAS Address setup time 0 ns tAH Address hold time 45 ns tDS Data setup time 20 ns tDH Data hold time 0 ns tCESC CE setup time before command write 0 ns tDF Output disable time (Note 1) tAETC Total erase time in auto chip erase tAETB 20 ns 3(TYP.) 24 s Total erase time in auto sector erase 1(TYP.) 8 s tAVT Total programming time in auto verify 7 210 us tBAL Sector address load time 100 us tCH CE Hold Time 0 ns tCS CE setup to WE going low 0 ns tVLHT Voltge Transition Time 4 us tOESP OE Setup Time to WE Active 4 us tWPP Write pulse width for chip protect 10 us tWPP2 Write pulse width for chip unprotect 12 ms NOTES: 1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven. REV. 2.1, JUN. 14, 2001 P/N: PM0515 17 MX29F001T/B SWITCHING TEST CIRCUITS DEVICE UNDER 1.6K ohm +5V TEST CL 1.2K ohm DIODES=IN3064 OR EQUIVALENT CL=100pF Including jig capacitance for 29F001T/B-70, 29F001T/B-90, 29F001T/B-12 30pF Including jig capacitance for 29F001T/B-55 SWITCHING TEST WAVEFORMS(I) for 29F001T/B-70, 29F001T/B-90, 29F001T/B-12 2.4 V 2.0V 2.0V TEST POINTS 0.8V 0.8V 0.45 V OUTPUT INPUT AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0". Input pulse rise and fall times are < 10ns. SWITCHING TEST WAVEFORMS(II) for 29F001T/B-55 3.0 V 1.5V TEST POINTS 1.5V 0V OUTPUT INPUT AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise and fall times are < 5ns. REV. 2.1, JUN. 14, 2001 P/N: PM0515 18 MX29F001T/B COMMAND WRITE TIMING WAVEFORM VCC 5V ADD A0~16 VIH WE VIH ADD Valid VIL tAH tAS VIL tOES tCEPH1 tCEP tCWC CE VIH VIL tCS OE VIL DATA Q0-7 tCH VIH tDS tDH VIH DIN VIL REV. 2.1, JUN. 14, 2001 P/N: PM0515 19 MX29F001T/B AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verification in fast algorithm and additional programming by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking after automatic verify starts. Device outputs DATA during programming and DATA after programming on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) AUTOMATIC PROGRAMMING TIMING WAVEFORM Vcc 5V A11~A16 A0~A10 ADD Valid 2AAH 555H tAS WE ADD Valid 555H tCWC tAH tCEPH1 tCESC tAVT CE tCEP OE tDS Q0~Q2 tDF tDH Command In Command In Command In DATA Data In DATA polling ,Q4(Note 1) Q7 Command In Command #AAH Command In Command In Command #55H Command #A0H (Q0~Q7) DATA Data In DATA tOE Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit REV. 2.1, JUN. 14, 2001 P/N: PM0515 20 MX29F001T/B AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Toggle Bit Checking Q6 not Toggled NO YES Invalid Command NO Verify Byte Ok YES NO . Q5 = 1 Auto Program Completed YES Reset Auto Program Exceed Timing Limit REV. 2.1, JUN. 14, 2001 P/N: PM0515 21 MX29F001T/B TOGGLE BIT ALGORITHM START Read Q7~Q0 Read Q7~Q0 (Note 1) NO Toggle Bit Q6 =Toggle? YES NO Q5=1? YES (Note 1,2) Read Q7~Q0 Twice NO Toggle Bit Q6= Toggle? YES Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Notes: 1.Read toggle bit Q6 twice to determine whether or not it is toggle. See text. 2.Recheck toggle bit Q6 because it may stop toggling as Q5 changes to "1". See text. REV. 2.1, JUN. 14, 2001 P/N: PM0515 22 MX29F001T/B AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is erased automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after auto matic erase starts. Device outputs 0 during erasure and 1 after erasure 0n Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) AUTOMATIC CHIP ERASE TIMING WAVEFORM Vcc 5V A11~A16 A0~A10 2AAH 555H 555H 555H tAS WE 2AAH 555H tCWC tAH tCEPH1 tAETC CE tCEP OE tDS tDH Q0,Q1, Command In Command In Command In Command In Command In Command In Q4(Note 1) Q7 DATA polling Command In Command In Command In Command In Command In Command In Command #AAH Command #55H Command #80H Command #AAH Command #55H Command #10H (Q0~Q7) Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit REV. 2.1, JUN. 14, 2001 P/N: PM0515 23 MX29F001T/B AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H Toggle Bit Checking Q6 not Toggled NO YES Invalid Command NO DATA Polling Q7 = 1 YES NO . Q5 = 1 Auto Chip Erase Completed YES Reset Auto Chip Erase Exceed Timing Limit REV. 2.1, JUN. 14, 2001 P/N: PM0515 24 MX29F001T/B AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector data indicated by A13 to A16 are erased. External erase verify is not required because data are erased automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) AUTOMATIC SECTOR ERASE TIMING WAVEFORM Vcc 5V Sector Address0 A13~A16 A0~A10 555H 2AAH 555H 555H Sector Address1 Sector Addressn 2AAH tAS tCWC tAH WE tCEPH1 tBAL tAETB CE tCEP OE tDS tDH Q0,Q1, Command In Command In Command In Command In Command In Command In Command In Command In Q4(Note 1) Q7 DATA polling Command In Command In Command In Command In Command In Command In Command #AAH Command #55H Command #80H Command #AAH Command #55H Command #30H (Q0~Q7) Command In Command #30H Command In Command #30H Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit REV. 2.1, JUN. 14, 2001 P/N: PM0515 25 MX29F001T/B AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address Toggle Bit Checking Q6 Toggled ? NO Invalid Command YES Load Other Sector Addrss If Necessary (Load Other Sector Address) NO Last Sector to Erase YES Time-out Bit Checking Q3=1 ? NO YES Toggle Bit Checking Q6 not Toggled NO YES NO . Q5 = 1 DATA Polling Q7 = 1 YES Reset Auto Sector Erase Completed Auto Sector Erase Exceed Timing REV. 2.1, JUN. 14, 2001 P/N: PM0515 26 MX29F001T/B ERASE SUSPEND/ERASE RESUME FLOWCHART START Write Data B0H NO Toggle Bit checking Q6 not toggled YES Read Array or Program Reading or Programming End NO YES Write Data 30H Continue Erase Another Erase Suspend ? NO . YES REV. 2.1, JUN. 14, 2001 P/N: PM0515 27 MX29F001T/B TIMING WAVEFORM FOR CHIP PROTECTION FOR SYSTEM WITH 12V A1 A6 12V 5V A9 tVLHT Verify 12V 5V OE tVLHT tVLHT tWPP 1 WE tOESP CE Data 01H F0H tOE REV. 2.1, JUN. 14, 2001 P/N: PM0515 28 MX29F001T/B TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITH 12V A1 12V 5V A9 tVLHT A6 Verify 12V 5V OE tVLHT tVLHT tWPP 2 WE tOESP CE Data 00H F0H tOE REV. 2.1, JUN. 14, 2001 P/N: PM0515 29 MX29F001T/B CHIP PROTECTION ALGORITHM FOR SYSTEM WITH 12V START PLSCNT=1 OE=VID,A9=VID,CE=VIL A6=VIL Activate WE Pulse Time Out 10us Device Failed Set WE=VIH, CE=OE=VIL A9 should remain VID Read from Sector Addr=SA, A1=1 No PLSCNT=32? No Data=01H? Yes Remove VID from A9 Write Reset Command Device Failed Chip Protection Complete REV. 2.1, JUN. 14, 2001 P/N: PM0515 30 MX29F001T/B CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITH 12V START PLSCNT=1 Set OE=A9=VID CE=VIL,A6=1 Activate WE Pulse Time Out 12ms Increment PLSCNT Set OE=CE=VIL A9=VID,A1=1 Read Data from Device No Data=00H? No PLSCNT=1000? Yes Yes Remove VID from A9 Write Reset Command Device Failed Chip Unprotect Complete REV. 2.1, JUN. 14, 2001 P/N: PM0515 31 MX29F001T/B TIMING WAVEFORM FOR CHIP PROTECTION FOR SYSTEM WITHOUT 12V A1 A6 Toggle bit polling Verify 5V OE tCEP WE * See the following Note! CE Data Don't care (Note 2) 01H F0H tOE Note: 1. Must issue "unlock for sector protect/unprotect" command before chip protection for a system without 12V provided. 2. Except F0H REV. 2.1, JUN. 14, 2001 P/N: PM0515 32 MX29F001T/B TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITHOUT 12V A1 A6 Toggle bit polling Verify 5V OE tCEP WE * See the following Note! CE Data Don't care (Note 2) 00H F0H tOE Note: 1. Must issue "unlock for sector protect/unprotect" command before chip unprotection for a system without 12V provided. 2. Except F0H REV. 2.1, JUN. 14, 2001 P/N: PM0515 33 MX29F001T/B CHIP PROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V START PLSCNT=1 Write "unlock for chip protect/unprotect" Command(Table1) OE=VIH,A9=VIH CE=VIL,A6=VIL Activate WE Pulse to start Data don't care Toggle bit checking DQ6 not Toggled No . Yes Increment PLSCNT Set CE=OE=VIL A9=VIH Raed from Sector Addr=SA, A1=1 No PLSCNT=32? No Data=01H? Yes Device Failed Yes Write Reset Command Chip Protection Complete REV. 2.1, JUN. 14, 2001 P/N: PM0515 34 MX29F001T/B CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V START PLSCNT=1 Write "unlock for chip protect/unprotect" Command (Table 1) Set OE=A9=VIH CE=VIL,A6=1 Activate WE Pulse to start Data don't care No Toggle bit checking DQ6 not Toggled Increment PLSCNT Yes Set OE=CE=VIL A9=VIH,A1=1 Read Data from Device No Data=00H? No Yes PLSCNT=1000? Yes Device Failed Write Reset Command Chip Unprotect Complete REV. 2.1, JUN. 14, 2001 P/N: PM0515 35 MX29F001T/B ID CODE READ TIMING WAVEFORM VCC 5V VID VIH VIL ADD A9 tACC tACC A1 VIH VIL ADD A2-A8 A10-A16 CE VIH VIL VIH VIL WE VIH tCE VIL OE VIH tOE VIL tDF tOH tOH VIH DATA Q0-Q7 DATA OUT DATA OUT VIL 18H/19H C2H REV. 2.1, JUN. 14, 2001 P/N: PM0515 36 MX29F001T/B ORDERING INFORMATION PLASTIC PACKAGE (Top Boot Sector as an sample For Bottom Boot Sector ones,MX29F001Txx will change to MX29F001Bxx) PART NO. ACCESS TIME OPERATING CURRENT STANDBY CURRENT PACKAGE (ns) MAX.(mA) MAX.(uA) MX29F001TQC-55 55 30 5 32 Pin PLCC MX29F001TQC-70 70 30 5 32 Pin PLCC MX29F001TQC-90 90 30 5 32 Pin PLCC MX29F001TQC-12 120 30 5 32 Pin PLCC MX29F001TTC-55 55 30 5 32 Pin TSOP (Normal Type) MX29F001TTC-70 70 30 5 32 Pin TSOP (Normal Type) MX29F001TTC-90 90 30 5 32 Pin TSOP (Normal Type) MX29F001TTC-12 120 30 5 32 Pin TSOP (Normal Type) MX29F001TPC-55 55 30 5 32 Pin PDIP MX29F001TPC-70 70 30 5 32 Pin PDIP MX29F001TPC-90 90 30 5 32 Pin PDIP MX29F001TPC-12 120 30 5 32 Pin PDIP REV. 2.1, JUN. 14, 2001 P/N: PM0515 37 MX29F001T/B ERASE AND PROGRAMMING PERFORMANCE(1) LIMITS TYP.(2) MAX.(3) UNITS Sector Erase Time 1 8 s Chip Erase Time 3 24 s Byte Programming Time 7 210 us Chip Programming Time 3.5 10.5 sec PARAMETER Erase/Program Cycles Note: MIN. 100,000 Cycles 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at 25°C,5V. 3.Maxi,um values measured at 25°C,4.5V. LATCHUP CHARACTERISTICS MIN. MAX. Input Voltage with respect to GND on all pins except I/O pins -1.0V 13.5V Input Voltage with respect to GND on all I/O pins -1.0V Vcc + 1.0V -100mA +100mA MIN. UNIT 20 Years Current Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time. DATA RETENTION PARAMETER Data Retention Time REV. 2.1, JUN. 14, 2001 P/N: PM0515 38 MX29F001T/B PACKAGE INFORMATION 32-PIN PLASTIC DIP REV. 2.1, JUN. 14, 2001 P/N: PM0515 39 MX29F001T/B 32-PIN PLASTIC LEADED CHIP CARRIER (PLCC) REV. 2.1, JUN. 14, 2001 P/N: PM0515 40 MX29F001T/B 32-PIN PLASTIC TSOP REV. 2.1, JUN. 14, 2001 P/N: PM0515 41 MX29F001T/B REVISION HISTORY Revision 2.0 2.1 Description 1.To remove "Advanced Information" datasheet marking and contain information on products in full production 2.The modification summary from Revision 0.0 to Revision 1.0: 2-1.Program/erase cycle times:10K cycles-->100K cycles 2-2.To add data retention 20 years 2-3.To remove A9 from the timing waveform of protection/ unprotection without 12V 2-4.Multi-sector erase timeout:80ms-->30us 2-5.tBAL:80us-->100us To modify "Package Information" Page P1 Date DEC/21/1999 P1,38 P1,38 P32,33 P8 P16,17 P39~41 JUN/14/2001 REV. 2.1, JUN. 14, 2001 P/N: PM0515 42 MX29F001T/B MACRONIX INTERNATIONAL CO., LTD. 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