N02L83W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit Overview The N02L83W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number Package Type N02L83W2AT 32 - TSOP I N02L83W2AN 32 - STSOP I N02L83W2AT2 32 - TSOP I Green N02L83W2AN2 32 - STSOP I Green Operating Power Temperature Supply (Vcc) Speed 55ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 70ns @ 2.3V Pin Configuration 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 N02L83W2A STSOP-I, TSOP-I ©2008 SCILLC. All rights reserved. July 2008 - Rev. 8 2 µA 2 mA @ 1MHz Pin Descriptions Pin Name A11 A9 A8 A13 WE CE2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 Standby Operating Current (ISB), Current (Icc), Typical Typical 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 Pin Function A0-A17 Address Inputs WE CE1, CE2 OE I/O0-I/O7 Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs VCC Power VSS Ground Publication Order Number: N02L83W2A/D N02L83W2A Functional Block Diagram Word Address Decode Logic Address Inputs A4 - A17 Page Address Decode Logic CE1 CE2 WE OE Control Logic 16K Page x 16 word x 8 bit RAM Array Word Mux Address Inputs A0 - A3 Input/ Output Mux and Buffers I/O0 - I/O7 Functional Description CE1 CE2 WE OE I/O0 - I/O7 MODE H X X X High Z Standby1 Standby 1 X L POWER X X High Z Standby Standby Data In Write2 Active L H L X2 L H H L Data Out Read Active L H H H High Z Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Symbol Test Condition Max Unit 25oC Min 8 pF 8 pF Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC 1. These parameters are verified in device characterization and are not 100% tested Rev. 8 | Page 2 of 10 | www.onsemi.com N02L83W2A Absolute Maximum Ratings1 Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Typ1 Max Unit 2.3 3.0 3.6 V Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH 1.8 VCC+0.3 V Input Low Voltage VIL –0.3 0.6 V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VOL IOL = -0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 2.0 4.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 12.0 16.0 mA Page Mode Operating Supply Current @ 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) ICC3 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 4.0 Read/Write Quiescent Operating Supply Current3 ICC4 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V Maximum Standby Current3 Maximum Data Retention Current3 IDR Test Conditions Min. Item Chip Disabled3 VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.8 V VCC–0.2 V 2.0 mA 3.0 mA 20.0 µA 10.0 µA 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. Rev. 8 | Page 3 of 10 | www.onsemi.com N02L83W2A Power Savings with Page Mode Operation (WE = VIH) Page Address (A4 - A17) Word Address (A0 - A3) Open page Word 1 Word 2 ... Word 16 CE1 CE2 OE Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Rev. 8 | Page 4 of 10 | www.onsemi.com N02L83W2A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing 2.3 - 3.6 V 2.7 - 3.6 V Item Symbol Read Cycle Time tRC Address Access Time tAA 70 55 ns Chip Enable to Valid Output tCO 70 55 ns Output Enable to Valid Output tOE 35 30 ns Chip Enable to Low-Z output tLZ 10 10 ns Output Enable to Low-Z Output tOLZ 5 5 ns Chip Disable to High-Z Output tHZ 0 20 0 15 ns Output Disable to High-Z Output tOHZ 0 20 0 15 ns Output Hold from Address Change tOH 10 10 ns Write Cycle Time tWC 70 55 ns Chip Enable to End of Write tCW 50 45 ns Address Valid to End of Write tAW 50 45 ns Write Pulse Width tWP 40 35 ns Address Setup Time tAS 0 0 ns Write Recovery Time tWR 0 0 ns Min. Max. 70 Min. Max. 55 Units ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 40 35 ns Data Hold from Write Time tDH 0 0 ns End Write to Low-Z Output tOW 5 5 ns 20 Rev. 8 | Page 5 of 10 | www.onsemi.com 15 ns N02L83W2A Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ CE1 tCO CE2 tLZ tOHZ tOE OE tOLZ Data Out High-Z Data Valid Rev. 8 | Page 6 of 10 | www.onsemi.com N02L83W2A Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW CE1 tCW CE2 tAS tWP WE tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE1 Control) tWC Address tWR tAW CE1 (for CE2 Control, use inverted signal) tAS tCW tWP WE tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Rev. 8 | Page 7 of 10 | www.onsemi.com N02L83W2A 32-Lead TSOP-I Package (T32) 18.40±0.10 0.50mm REF 8.0±0.10 0.27 0.17 20.0±0.20 SEE DETAIL B DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash Rev. 8 | Page 8 of 10 | www.onsemi.com N02L83W2A 32-Lead STSOP-I Package (N32) 11.80±0.10 0.50mm REF 8.0±0.10 0.27 0.17 13.40±0.20 SEE DETAIL B DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in millimeters 2. Package dimensions exclude molding flash Rev. 8 | Page 9 of 10 | www.onsemi.com N02L83W2A Ordering Information Part Number Package Shipping Method N02L83W2AT5I Leaded 32-TSOP I Tray N02L83W2AT25I Green 32-TSOP I (RoHS Compliant) Tray N02L83W2AN5I Leaded 32-sTSOP I Tray N02L83W2AN25I Green 32-sTSOP I (RoHS Compliant) Tray N02L83W2AT5IT Leaded 32-TSOP I Tape & Reel N02L83W2AT25IT Green 32-TSOP I (RoHS Compliant) Tape & Reel N02L83W2AN5IT Leaded 32-sTSOP I Tape & Reel N02L83W2AN25IT Green 32-sTSOP I (RoHS Compliant) Tape & Reel Revision History Revision # Date A Jan 2001 Initial Advance Release Mar 2001 Added Table 3: Capacitance Revised quiescent operating current, changed pin 31 to CE1, modified table 1 and figure 2, other minor edits C Dec. 2001 Part number change from EM256L08, modified Overview and Features, added Page Mode Operation diagram and Package diagram, revised Operating Characteristics table, Functional Description table, Timing diagrams, and Ordering Information diagram D Nov. 2002 Replaced Isb and Icc on Product Family table with typical values B Change Description E Oct. 2004 Added Green Package Option F Dec. 2005 RoHS Compliant added onto Green packages G 8 September 2006 Converted to AMI Semiconductor July 2008 Converted to ON Semiconductor and new part numbers ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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