NB2870A Low Power, Reduced EMI Clock Synthesizer The NB2870A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2870A reduces ElectroMagnetic Interference (EMI) at the clock source, allowing system wide reduction of EMI of all clock dependent signals. The NB2870A allows significant system cost savings by reducing the number of circuit board layers, ferrite beads and shielding that are traditionally required to pass EMI regulations. The NB2870A uses the most efficient and optimized modulation profile approved by the FCC and is implemented by using a proprietary all digital method. The NB2870A modulates the output of a single PLL in order to “spread” the bandwidth of a synthesized clock, and more importantly, decreases the peak amplitudes of its harmonics. This results in significantly lower system EMI compared to the typical narrow band signal produced by oscillators and most frequency generators. Lowering EMI by increasing a signal’s bandwidth is called ‘spread spectrum clock generation’. The NB2870A is targeted towards all portable devices with very low power requirements like MP3 players, Notebooks and digital still cameras. Features • • • • • • • • • • Generates an EMI Optimized Clocking Signal at the Output Integrated Loop Filter Components Operates with a 3.3 V / 2.5 V Supply Operating Current less than 4.0 mA Low Power CMOS Design Input Frequency Range: 13 MHz to 30 MHz Generates a 1X Low EMI Spread Spectrum clock of the Input Frequency Frequency Deviation "0.75% (TYP) @ 22 MHz Available in TSOP−6 Package (TSOT−23−6) Pb−Free Package is Available © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 3 1 http://onsemi.com MARKING DIAGRAM* TSOP−6 (TSOT−23−6) SN SUFFIX CASE 318G 6 1 E09 A Y W G XXXAYWG G 1 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Publication Order Number: NB2870A/D NB2870A VDD PLL Modulation XIN/CLKIN Crystal Oscillator XOUT Frequency Divider Loop Filter Phase Detector Output Divider VCO Feedback Divider ModOUT REFOUT VSS Figure 1. Block Diagram Table 1. KEY SPECIFICATIONS Description Specification Supply Voltages VDD = 3.3 V / 2.5 V Frequency Range 13 MHz < CLKIN < 30 MHz Cycle−to−Cycle Jitter 200 ps (maximum) Output Duty Cycle 45/55% (worst case) Modulation Equation FIN/640 Frequency Deviation "0.75% (TYP) @ 22 MHz REFOUT 1 XOUT 2 XIN/CLKIN 3 NB2870A 6 VSS 5 ModOUT 4 VDD Figure 2. Pin Configuration Table 2. PIN DESCRIPTION Pin # Pin Name Type Description 1 REFOUT O Buffered output of the input frequency. 2 XOUT O Crystal connection. If using an external reference, this pin must be left unconnected. 3 XIN/CLKIN I Crystal connection or external reference frequency input. This pin has dual functions. It can be connected either to an external crystal or an external reference clock 4 VDD P Power supply for the entire chip. 5 ModOUT O Spread spectrum clock output. 6 VSS P Ground connection. http://onsemi.com 2 NB2870A Figure 3. Modulation Profile Table 3. MAXIMUM RATINGS Symbol Description Rating Unit VDD, VIN Voltage on any pin with respect to Ground 0.5 to + 7.0 V TSTG Storage Temperature −65 to +125 °C TA Operating Temperature 0 to 70 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per MIL−STD−883, Method 3015) 2 kV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 3 NB2870A Table 4. DC ELECTRICAL CHARACTERISTICS FOR 2.5 V SUPPLY (Test Conditions: All parameters are measured at room temperature 25°C) Symbol Description Min Typ Max Unit V VIL Input LOW Voltage GND − 0.3 0.8 VIH Input HIGH Voltage 2.0 VDD + 0.3 V IIL Input LOW Current −35 mA IIH Input HIGH Current 35 mA IXOL XOUT Output LOW Current (@ 0.5 V, VDD = 2.5 V) 3.0 mA IXOH XOUT Output HIGH Current (@ 1.8 V, VDD = 2.5 V) 3.0 mA VOL Output LOW Voltage (VDD = 2.5 V, IOL = 8.0 mA) VOH Output HIGH Voltage (VDD = 2.5 V, IOH = 8.0 mA) IDD Static Supply Current (Note 1) 1.0 mA ICC Dynamic Supply Current (2.5 V, 22 MHz, and No Load) 3.0 mA VDD Operating Voltage tON Powerup Time (first locked cycle after powerup) (Note 2) ZOUT Clock Output Impedance 0.6 1.8 2.375 V V 2.5 2.625 V 5.0 mS 50 W NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. XIN/CLKIN pin is pulled low. 2. VDD and XIN/CLKIN input are stable. Table 5. AC ELECTRICAL CHARACTERISTICS FOR 2.5 V SUPPLY Symbol Description Min Typ Max Unit CLKIN Input Frequency 13 30 MHz ModOUT Output Frequency 13 30 MHz fd Frequency Deviation ±1.20 ±0.47 % tLH (Note 3) Output Rise Time (measured at 0.7 V to 1.7 V) 0.7 1.4 1.6 ns tHL (Note 3) Output Fall Time (measured at 1.7 V to 0.7 V) 0.4 0.8 tJC Jitter (Cycle−to−Cycle) tD Output Duty Cycle Input Frequency = 13 MHz Input Frequency = 30 MHz 45 50 1.0 ns 200 ps 55 % NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. tLH and tHL are measured at capacitive load of 15 pF. http://onsemi.com 4 NB2870A Table 6. DC ELECTRICAL CHARACTERISTICS FOR 3.3 V SUPPLY (Test Conditions: All parameters are measured at room temperature 25°C) Symbol Description Min Typ Max Unit V VIL Input LOW Voltage GND − 0.3 0.8 VIH Input HIGH Voltage 2.0 VDD + 0.3 V IIL Input LOW Current −35 mA IIH Input HIGH Current 35 mA IXOL XOUT Output LOW Current (@ 0.4 V, VDD = 3.3 V) 3 mA IXOH XOUT Output HIGH Current (@ 2.5 V, VDD = 3.3 V) 3 mA VOL Output LOW Voltage (VDD = 3.3 V, IOL = 8.0 mA) VOH Output HIGH Voltage (VDD = 3.3 V, IOH = 8.0 mA) IDD Static Supply Current (Note 4) 1.2 mA ICC Dynamic Supply Current (3.3 V, 22 MHz, and No Load) 4.0 mA VDD Operating Voltage tON Powerup Time (first locked cycle after powerup) (Note 5) ZOUT Clock Output Impedance 0.4 2.5 2.7 V V 3.3 3.6 V 5.0 mS 45 W NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. XIN/CLKIN pin is pulled low. 5. VDD and XIN/CLKIN input are stable. Table 7. AC ELECTRICAL CHARACTERISTICS FOR 3.3 V SUPPLY Symbol Description Min Typ Max Unit CLKIN Input Frequency 13 30 MHz ModOUT Output Frequency 13 30 MHz fd Frequency Deviation ±1.20 ±0.47 % tLH (Note 6) Output Rise Time (measured at 0.8 V to 2.0 V) 0.4 1.2 1.5 ns tHL (Note 6) Output Fall Time (measured at 2.0 V to 0.8 V) 0.3 0.8 tJC Jitter (Cycle−to−Cycle) tD Output Duty Cycle Input Frequency = 13 MHz Input Frequency = 30 MHz 45 50 1.1 ns 200 ps 55 % NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 6. tLH and tHL are measured at capacitive load of 15 pF. http://onsemi.com 5 NB2870A XIN XOUT Crystal R1 = 510 W C1 = 27 pF C2 = 27 pF Figure 4. Typical Crystal Oscillator Circuit Table 8. TYPICAL CRYSTAL SPECIFICATIONS Fundamental AT Cut Parallel Resonant Crystal Nominal Frequency 14.31818 MHz Frequency Tolerance ±50 ppm or better at 25°C Operating Temperature Range −25°C to +85°C Storage Temperature −40°C to +85°C Load Capacitance 18 pF Shunt Capacitance 7 pF Maximum ESR 25 W http://onsemi.com 6 NB2870A ORDERING INFORMATION Marking Temperature Range Package Shipping† Availability NB2870ASNR2 E09 0°C − 70°C TSOP−6 (TSOT−23−6) 2500 Tape & Reel Now NB2870ASNR2G E09 0°C − 70°C TSOP−6 (TSOT−23−6) (Pb−Free) 2500 Tape & Reel Contact Sales Representative Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NB2870A PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b e c A 0.05 (0.002) q L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. This product utilizes US Patent #6,646,463 Impedance Emulator Patent issued to Alliance Semiconductor, Dated 11−11−2003. 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