UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1 TO-92 *Pb-free plating product number: 2SC1815L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC1815-x-T92-A-B 2SC1815L-x-T92-A-B 2SC1815-x-T92-A-K 2SC1815L-x-T92-A-K 2SC1815L-x-T92-A-B (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package TO-92 TO-92 (1) (2) (3) (4) (5) Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk B: Tape Box, K: Bulk refer to Pin Assignment T92: TO-92 x: refer to Classification of hFE1 L: Lead Free Plating, Blank: Pb/Sn 1 of 4 QW-R201-006,D 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC RATINGS 60 50 5 150 50 400 Junction Temperature TJ +125 Storage Temperature TSTG -55 ~ +125 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(note) Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO VCE(SAT) VBE(SAT) hFE1 hFE2 fT Cob Noise Figure NF TEST CONDITIONS VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz IC=-0.1mA, VCE=6V RG=10kΩ, f=100Hz MIN TYP 0.1 120 25 80 MAX 100 100 0.25 1.0 700 UNIT nA nA V V 2.0 3.0 MHz pF 1.0 1.0 dB CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw GR 200-400 BL 350-700 2 of 4 QW-R201-006,D 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Fig.1 Static characteristics Fig.2 DC current Gain 100 103 Collector Current, I C (mA) VCE=6V DC Current Gain, hFE 80 IB=300µA 60 IB =250µA 40 IB=200µA I B=150µA 20 0 102 101 I B=100µA I B=50µA 0 4 8 12 16 100 10-1 20 Collector-Emitter Voltage (V) Fig.4 Saturation Voltage Fig.3 Base-Emitter on Voltage 104 Saturation Voltage (mV) Collector Current, I C (mA) 102 VCE=6V 10 1 100 10-1 0 0.2 0.4 0.6 0.8 Base-Emitter Voltage (V) 1.0 IC=10*I B VBE(SAT ) 103 102 VCE(SAT) 101 -1 10 100 101 102 103 Collector Current, IC (mA) Fig.5 Current Gain-Bandwidth Product Fig.6 Collector Output Capacitance 3 10 Capacitance, C ob (pF) Current Gain-Bandwidth Product, f T(MHz) 102 VCE=6V 102 101 100 10-1 100 101 102 103 Collector Current, IC (mA) 100 101 102 Collector Current, I C (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 1 f=1MHz I E=0 100 10-1 100 101 102 103 Collector-Base Voltage (V) 3 of 4 QW-R201-006,D 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-006,D