PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS5350SS Package NXP Name NPN/PNP complement SOT96-1 SO8 PBSS4350SPN NPN/NPN complement PBSS4350SS 1.2 Features n n n n n Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −50 V - - −2.7 A - - −5 A - 95 140 mΩ Per transistor VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −2 A; IB = −200 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 emitter TR2 4 base TR2 5 collector TR2 6 collector TR2 7 collector TR1 8 collector TR1 Simplified outline 8 Symbol 8 5 7 TR1 1 4 1 6 5 TR2 2 3 4 006aaa976 3. Ordering information Table 4. Ordering information Type number PBSS5350SS Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS5350SS 5350SS 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit open emitter - −50 V Per transistor VCBO collector-base voltage VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −5 V IC collector current - −2.7 A ICM peak collector current - −5 A IB base current Ptot total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C PBSS5350SS_1 Product data sheet - −0.5 A [1] - 0.55 W [2] - 0.87 W [3] - 1.43 W © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 2 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 0.75 W [2] - 1.2 W [3] - 2 W Per device Ptot Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa967 2.5 Ptot (W) (1) 2.0 1.5 (2) 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 3 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 227 K/W [2] - - 144 K/W [3] - - 87 K/W - - 40 K/W [1] - - 167 K/W [2] - - 104 K/W [3] - - 63 K/W Per transistor thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa809 103 duty cycle = Zth(j-a) (K/W) 102 1.0 0.75 0.5 0.33 0.2 10 0.05 0.1 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 4 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 006aaa810 103 duty cycle = Zth(j-a) (K/W) 1.0 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa811 103 Zth(j-a) (K/W) duty cycle = 102 1.0 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 0 1 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 5 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off VCB = −50 V; IE = 0 A current VCB = −50 V; IE = 0 A; Tj = 150 °C - −100 nA - −50 µA ICES collector-emitter cut-off current VCE = −50 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −100 mA VCEsat collector-emitter saturation voltage 200 340 - VCE = −2 V; IC = −500 mA [1] 200 290 - VCE = −2 V; IC = −1 A [1] 180 250 - VCE = −2 V; IC = −2 A [1] 130 180 - VCE = −2 V; IC = −2.7 A [1] 95 135 - IC = −0.5 A; IB = −50 mA - −60 −90 mV IC = −1 A; IB = −50 mA - −125 −180 mV IC = −2 A; IB = −100 mA - −225 −320 mV IC = −2 A; IB = −200 mA - −190 −280 mV IC = −2.7 A; IB = −270 mA - −255 −370 mV - 95 140 mΩ - −0.95 −1.1 V - −1 −1.2 V - −0.8 −1.2 V - 9 - ns - 54 - ns - 63 - ns [1] RCEsat collector-emitter IC = −2 A; IB = −200 mA saturation resistance [1] VBEsat base-emitter saturation voltage [1] IC = −2 A; IB = −100 mA IC = −2.7 A; IB = −270 mA VBEon base-emitter turn-on VCE = −2 V; IC = −1 A voltage td delay time tr rise time ton turn-on time ts storage time - 190 - ns tf fall time - 50 - ns toff turn-off time - 240 - ns Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 25 35 pF [1] VCC = −10 V; IC = −2 A; IBon = −100 mA; IBoff = 100 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS5350SS_1 Product data sheet - © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 6 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 006aaa977 600 006aaa978 −5 IB (mA) = −140 −126 −112 −98 −84 −70 −56 IC (A) hFE (1) −4 400 −3 (2) −42 −28 −14 −2 200 (3) −1 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa979 −1.2 Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aaa980 −1.4 VBE (V) VBEsat (V) −0.8 −1.0 (1) (1) (2) (3) −0.4 (2) −0.6 (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V −0.2 −10−1 −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS5350SS_1 Product data sheet −10 © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 7 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 006aaa981 −1 006aaa982 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (3) (2) −10−2 −10−3 −10−1 −10−2 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 (3) −1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa983 103 −103 −104 IC (mA) Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 102 102 10 10 (1) (2) (3) 1 006aaa984 103 RCEsat (Ω) (1) (2) (3) 1 10−1 10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5350SS_1 Product data sheet −102 Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C 10−2 −10−1 −10 © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 8 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −2 A; IBon = −100 mA; IBoff = 100 mA Fig 14. Test circuit for switching times PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 9 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS5350SS [1] Package SOT96-1 Description 8 mm pitch, 12 mm tape and reel 1000 2500 -115 -118 For further information and the availability of packing methods, see Section 14. PBSS5350SS_1 Product data sheet Packing quantity © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 10 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17. Wave soldering footprint SOT96-1 (SO8) PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 11 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5350SS_1 20070403 Product data sheet - - PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 12 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PBSS5350SS_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 April 2007 13 of 14 PBSS5350SS NXP Semiconductors 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 April 2007 Document identifier: PBSS5350SS_1