DISCRETE SEMICONDUCTORS DATA SHEET PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Sep 10 2004 Aug 17 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES PDTC114Y series QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO collector-emitter voltage IO • Reduction of component count • Reduced pick and place costs. APPLICATIONS PARAMETER TYP. MAX. UNIT − 50 V output current (DC) − 100 mA R1 bias resistor 10 − kΩ R2 bias resistor 47 − kΩ • General purpose switching and amplification • Inverter and interface circuits DESCRIPTION • Circuit driver. NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC114YE SOT416 SC-75 33 PDTA114YE PDTC114YEF SOT490 SC-89 12 PDTA114YEF PDTC114YK SOT346 SC-59 47 PDTA114YK PDTC114YM SOT883 SC-101 DU PDTA114YM PDTC114YS SOT54 (TO-92) SC-43 TC114Y PDTA114YS PDTC114YT SOT23 − *27(1) PDTA114YT PDTC114YU SOT323 SC-70 *30(1) PDTA114YU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Aug 17 2 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PDTC114YS handbook, halfpage 2 R1 1 DESCRIPTION 1 base 2 collector 3 emitter 1 base 2 emitter 3 collector 1 base 2 emitter 3 collector 1 2 R2 3 3 MAM364 PDTC114YE PDTC114YEF PDTC114YK handbook, halfpage 3 3 R1 PDTC114YT 1 PDTC114YU R2 2 2 1 Top view MDB269 PDTC114YM handbook, halfpage 3 R1 2 1 3 R2 1 2 bottom view MHC506 2004 Aug 17 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +40 V negative − −6 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT416 note 1 − 150 mW SOT883 notes 2 and 3 − 250 mW SOT490 notes 1 and 2 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient UNIT in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 833 K/W SOT883 notes 2 and 3 500 K/W SOT490 notes 1 and 2 500 K/W Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. 2004 Aug 17 VALUE 4 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 µA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 150 hFE DC current gain VCE = 5 V; IC = 5 mA 100 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV Vi(off) input-off voltage IC = 100 µA; VCE = 5 V − 0.7 0.5 V Vi(on) input-on voltage IC = 1 mA; VCE = 0.3 V 1.4 0.8 − V R1 input resistor 7 10 13 kΩ R2 -------R1 resistor ratio 3.7 4.7 5.7 Cc collector capacitance − − 2.5 2004 Aug 17 IE = ie = 0; VCB = 10 V; f = 1 MHz 5 pF Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2004 Aug 17 REFERENCES IEC JEDEC EIAJ SC-75 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Plastic surface mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 2004 Aug 17 REFERENCES IEC JEDEC EIAJ TO-236 SC-59 7 EUROPEAN PROJECTION ISSUE DATE 98-07-17 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Aug 17 REFERENCES IEC JEDEC JEITA SC-101 8 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Aug 17 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Aug 17 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 10 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2004 Aug 17 REFERENCES IEC JEDEC EIAJ SC-70 11 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series Plastic surface mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2004 Aug 17 REFERENCES IEC JEDEC EIAJ SC-89 12 EUROPEAN PROJECTION ISSUE DATE 98-10-23 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PDTC114Y series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Aug 17 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp14 Date of release: 2004 Aug 17 Document order number: 9397 750 13665