DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 15 2004 Apr 14 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES PIMH9; PUMH9; PEMH9 QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplifies circuit design VCEO TYP. MAX. UNIT collector-emitter voltage − 50 V IO output current (DC) − 100 mA TR1 NPN − − − APPLICATIONS TR2 NPN − − − • General purpose switching and amplification R1 bias resistor 10 − kΩ • Inverter and interface circuits R2 bias resistor 47 − kΩ • Reduces component count • Reduces pick and place costs. PARAMETER • Circuit driver. DESCRIPTION NPN/NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PNP/PNP COMPLEMENT MARKING CODE NPN/PNP COMPLEMENT PHILIPS EIAJ PEMH9 SOT666 − H9 PEMB9 PEMD9 PIMH9 SOT457 SC-74 H9 − − SC-88 H*9(1) PUMB9 PUMD9 PUMH9 SOT363 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PEMH9 PIMH9 handbook, halfpage 6 5 6 4 5 4 PUMH9 R1 R2 TR2 TR1 R2 1 2 3 1 Top view 2004 Apr 14 R1 MHC049 2 2 3 DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collectorTR1 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PEMH9 − plastic surface mounted package; 6 leads SOT666 PIMH9 − plastic surface mounted package; 6 leads SOT457 PUMH9 − plastic surface mounted package; 6 leads SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V Vi input voltage positive − +40 V negative − −10 V IO output current − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 200 mW SOT457 note 1 − 300 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 300 mW SOT457 note 1 − 600 mW SOT666 notes 1 and 2 − 300 mW Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 Apr 14 3 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth(j-a) Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 625 K/W SOT457 note 1 417 K/W SOT666 notes 1 and 2 625 K/W Per device Rth(j-a) Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 416 K/W SOT457 note 1 208 K/W SOT666 notes 1 and 2 416 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 A − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 150 μA hFE DC current gain VCE = 5 V; IC = 5 mA 100 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV Vi(off) input-off voltage VCE = 5 V; IC = 100 μA − 0.7 0.5 V Vi(on) input-on voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 − V R1 input resistor 7 10 13 kΩ R2 -------R1 resistor ratio 3.7 4.7 5.7 Cc collector capacitance − − 2.5 2004 Apr 14 VCB = 10 V; IE = ie = 0 A; f = 1 MHz 4 pF NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 PACKAGE OUTLINES Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-08 06-03-16 SOT666 2004 Apr 14 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2004 Apr 14 REFERENCES IEC JEDEC JEITA SC-74 6 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2004 Apr 14 REFERENCES IEC JEDEC JEITA SC-88 7 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ PIMH9; PUMH9; PEMH9 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Apr 14 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp9 Date of release: 2004 Apr 14 Document order number: 9397 750 13091