UV Enhanced Silicon Photodiode PDU-V104 PACKAGE INCH [mm] PACKAGEDIMENSIONS DIMENSIONS INCH [mm] .150 [3.81] Ø .215 [5.46] Ø .210 [5.33] 45° .060 [1.52] 2X Ø.018 [0.46] ANODE Ø .156 [3.96] Ø .152 [3.86] 65° VIEWING ANGLE Ø.187 [4.75] Ø.181 [4.60] .100 [2.54] CATHODE 2X .500 [12.7] MIN CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .125 [3.18] TO-46 PACKAGE .066 [1.68] .046 [1.17] ACTIVE AREA TO-46 PACKAGE .104 [2.64] ACTIVE AREA DESCRIPTION APPLICATIONS The PDU-V104 is a UV enhanced silicon PIN packaged in a hermetic TO-46 metal package. • Instrumentation • Industrial • Medical SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED 0.10 ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS ID RSH CJ lrange R VBR NEP Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power tr Response Time** VR = 10mV VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan l= 365 nm V, VR = 0 V I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN TYP MAX 10 1.0 5 2 340 350 0.10 30 1100 0.18 50 5.0x10-14 190 13 UNITS pA GW pF nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 1050 Wavelength (nm) 950 0.00 1000 * 1/16 inch from case for 3 seconds max. 900 °C 0.20 850 +240 0.30 800 +125 0.40 750 Soldering Temperature* -40 °C °C 700 TS +150 650 Operating Temperature -55 0.50 600 TO V 550 Storage Temperature 75 500 TSTG 0.60 UNITS 450 Reverse Voltage MAX 250 VBR MIN 200 PARAMETER Responsivity (A/W) SYMBOL 400 Low noise UV enhanced High shunt resistance High response 350 • • • • 300 FEATURES