ETC PH530-23

PH530-23
High Linearity InGaP HBT Amplifier
Features
Functional Diagram
Applications
4
800MHz - 3000MHz
Mobile Infrastructure
19.0 dB Gain at 900MHz
Cellular, GSM
+30 dBm P1dB
PCS, WCDMA, WiBro, WiMAX
+45 dBm Output IP3
W-LAN / ISM
Single Voltage Supply
RFID / Fixed Wireless
1
Lead-free / Green / RoHScompliant SOT-223 Package
3
2
Function
Pin No.
RF IN
1
RF OUT / Bias
3
Ground
2,4
Description
The PH530-23 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high
quality SOT-223 package. The device features excellent Input and output return loss, highly linear performance.
The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as
driver amplifier for wireless infrastructure applications. The PH530-23 operates from a single +5 voltage supply
and have an internal active bias. All devices are 100% RF and DC tested
Specifications
Symbol
Parameters
Units
Freq.
Min.
Typ.
19.0
13.8
13.1
11.5
S21
Gain
dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
S11
Input Return Loss
dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
-17
-17
-19
-19
dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
-15
-18
-17
-17
dBm
900 MHz
1900 MHz
2140 MHz
2550 MHz
30.0
30.0
29.5
28.3
45
44
45
42.5
4.1
3.9
4.0
3.9
S22
Output Return Loss
P1dB
Output Power @1dB
compression
OIP3
Output Third Order
intercept
dBm
900 MHz
1900 MHz
2140 MHz
2550 MHz
NF
Noise Figure
dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
V/I
Device voltage / current
V/mA
5/260
Rth
Thermal Resistance
°C/W
36
Tj
Junction Temperature
°C
133
Max.
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone separated by 1MHz.
http://www.prewell.com
Preliminary Data Sheet
1
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
900 MHz Application Circuit
+5 V
Frequency
900 MHz
S21 : Gain
19.5 dB
1uF
S11 : Input Return Loss
-18 dB
S22 : Output Return Loss
-16 dB
Output P1dB
+30.2 dBm
Output IP3 @8dBm
+45.5 dBm
IS-95A Ch. Power
+21.3 dBm
100pF
100nH
RF IN
100pF
3.3nH
1.8nH
1.0pF
7.0pF
24
100pF
Gain vs. Frequency
RF OUT
@ -45dBc ACPR
6.0pF
Noise Figure
4.0 dB
Supply Voltage
5V
Current
262 mA
Input Return Loss
0
Output Return Loss
0
o
S11(dB)
Gain(dB)
22
20
-5
-6
-10
-12
S22(dB)
+25 C
o
-40 C
o
+85 C
-15
-18
o
18
16
800
-20
850
900
950
-25
800
1000
900
950
-30
800
1000
46
28
OIP3(dBm)
OIP3(dBm)
P1dB(dBm)
30
40
900
950
+25 C
o
-40 C
o
+85 C
35
30
800
1000
850
Frequency(MHz)
6
44
42
o
o
+25 C
o
-40 C
o
+85 C
26
1000
Freq=900MHz, +8dBm/tone
48
45
32
950
OIP3 vs. Temperature
o
+8dBm/tone, +25 C
50
900
Frequency(MHz)
Output IP3 vs. Frequency
P1dB vs. Frequency
850
850
Frequency(MHz)
34
24
800
+25 C
o
-40 C
o
+85 C
-24
850
Frequency(MHz)
36
o
+25 C
o
-40 C
o
+85 C
900
950
40
1000
38
-40
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
ACPR IS-95A vs. Channel Power
Noise Figure vs. Frequency
-40
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
freq=900MHz
-45
ACPR(dBc)
NF(dB)
5
4
3
2
-50
-55
-60
-65
o
+25 C
1
800
-70
850
900
Frequency(MHz)
950
1000
12
14
16
18
20
22
24
Output Channel Power(dBm)
http://www.prewell.com
Preliminary Data Sheet
2
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
1900 MHz Application Circuit
+5 V
Frequency
1900 MHz
S21 : Gain
14.0 dB
1uF
S11 : Input Return Loss
-18 dB
S22 : Output Return Loss
-20 dB
Output P1dB
+30.2 dBm
Output IP3 @9dBm
+44.5 dBm
IS-95A Ch. Power
+22.5 dBm
20pF
22nH
RF IN
20pF
1.8pF
1.5pF
18
20pF
50Ω/4mm
RF OUT
@ -45dBc ACPR
2.2pF
Gain vs. Frequency
Noise Figure
3.8 dB
Supply Voltage
5V
Current
262 mA
Input Return Loss
0
Output Return Loss
0
-5
14
-10
12
+25 C
o
-40 C
o
+85 C
-6
S22(dB)
16
S11(dB)
Gain(dB)
o
-15
-12
o
+25 C
o
-40 C
o
+85 C
-18
o
+25 C
o
-40 C
o
+85 C
10
8
1800
1850
1900
1950
-20
-24
-25
1800
2000
1850
Frequency(MHz)
36
1900
1950
-30
1800
2000
o
+9dBm/tone, +25 C
50
Freq=1900MHz, +9dBm/tone
50
30
28
45
OIP3(dBm)
OIP3(dBm)
P1dB(dBm)
2000
48
32
40
o
1850
1900
1950
35
1800
2000
46
44
o
+25 C
o
-40 C
o
+85 C
+25 C
o
-40 C
o
+85 C
26
1850
Frequency(MHz)
6
1950
OIP3 vs. Temperature
Output IP3 vs. Frequency
P1dB vs. Frequency
1900
Frequency(MHz)
34
24
1800
1850
Frequency(MHz)
1900
1950
42
2000
40
-40
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
ACPR IS-95A vs. Channel Power
Noise Figure vs. Frequency
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
-40
freq=1.9GHz
-45
ACPR(dBc)
NF(dB)
5
4
3
2
-50
-55
-60
-65
o
+25 C
1
1800
1850
1900
Frequency(MHz)
1950
2000
-70
10
12
14
16
18
20
22
24
Output Channel Power(dBm)
http://www.prewell.com
Preliminary Data Sheet
3
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit
+5 V
1uF
1.0pF
1.0pF
Gain vs. Frequency
13.3 dB
-20 dB
-18 dB
Output P1dB
+29.8 dBm
Output IP3 @9dBm
+45.5 dBm
WCDMA Ch. Power
+19.7 dBm
RF OUT
@ -45dBc ACLR
1.8pF
Noise Figure
3.9 dB
Supply Voltage
5V
Current
262 mA
Input Return Loss
0
-6
14
-10
-12
S22(dB)
-5
12
-15
8
2050
2100
2150
2200
+25 C
o
-40 C
o
+85 C
-20
-25
2050
2250
2100
Frequency(MHz)
36
2150
2200
o
-30
2050
2250
2200
2250
OIP3 vs. Temperature
o
+9dBm/tone, +25 C
50
2150
Frequency(MHz)
Output IP3 vs. Frequency
P1dB vs. Frequency
Freq=2140MHz, +9dBm/tone
50
48
30
28
45
OIP3(dBm)
OIP3(dBm)
P1dB(dBm)
2100
Frequency(MHz)
32
40
o
2100
2150
2200
35
2050
2250
46
44
o
+25 C
o
-40 C
o
+85 C
+25 C
o
-40 C
o
+85 C
26
2100
Frequency(MHz)
6
+25 C
o
-40 C
o
+85 C
-24
34
24
2050
-18
o
o
+25 C
o
-40 C
o
+85 C
10
Output Return Loss
0
16
S11(dB)
Gain(dB)
18
20pF
50Ω/4mm
S21 : Gain
S11 : Input Return Loss
22nH
20pF
2140 MHz
S22 : Output Return Loss
20pF
RF IN
Frequency
2150
2200
42
2250
40
-40
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
W-CDMA ACLR vs. Channel Power
Noise Figure vs. Frequency
3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset
-35
freq=2.14GHz
-40
ACLR(dBc)
NF(dB)
5
4
3
-45
-50
-55
2
o
+25 C
1
2050
2100
2150
Frequency(MHz)
2200
2250
-60
10
12
14
16
18
20
22
Output Channel Power(dBm)
http://www.prewell.com
Preliminary Data Sheet
4
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
2350 MHz Application Circuit
+5 V
Frequency
2350 MHz
S21 : Gain
11.4 dB
S11 : Input Return Loss
-17 dB
1uF
20pF
S22 : Output Return Loss
-17 dB
Output P1dB
+29.4 dBm
Output IP3 @9dBm
+43.5 dBm
Noise Figure
3.9 dB
22nH
RF IN
0.75pF
50Ω/4mm
0.75pF
1.5pF
Gain vs. Frequency
20pF
RF OUT
Supply Voltage
5V
Current
262 mA
Input Return Loss
0
-6
12
-10
-12
S22(dB)
-5
10
-15
6
2250
2300
2350
2400
+25 C
o
-40 C
o
+85 C
-20
-25
2250
2450
2300
Frequency(MHz)
2350
2400
o
+25 C
o
-40 C
o
+85 C
-24
-30
2250
2450
2300
Frequency(MHz)
P1dB vs. Frequency
34
6
32
2350
2400
2450
Frequency(MHz)
Noise Figure vs. Frequency
5
30
NF(dB)
P1dB(dBm)
-18
o
o
+25 C
o
-40 C
o
+85 C
8
Output Return Loss
0
14
S11(dB)
Gain(dB)
16
20pF
28
26
3
o
+25 C
o
-40 C
o
+85 C
24
22
2200
4
2250
2300
2350
2400
2450
2
o
+25 C
1
2250
2500
2300
Frequency(MHz)
2400
2450
OIP3 vs. Temperature
Output IP3 vs. Frequency
o
+9dBm/tone, +25 C
50
2350
Frequency(MHz)
Freq=2350MHz, +9dBm/tone
46
OIP3(dBm)
OIP3(dBm)
44
45
40
35
2250
42
o
+25 C
o
-40 C
o
+85 C
2300
2350
2400
40
38
-40
2450
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
http://www.prewell.com
Preliminary Data Sheet
5
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
2550 MHz Application Circuit
+5 V
Frequency
2550 MHz
S21 : Gain
11.6 dB
S11 : Input Return Loss
-25 dB
1uF
20pF
S22 : Output Return Loss
-18 dB
Output P1dB
+28.3 dBm
Output IP3 @9dBm
+43.0 dBm
Noise Figure
3.8 dB
22nH
16
20pF
0.5pF
1.0nH
0.5pF
1.2pF
Gain vs. Frequency
RF OUT
5V
Current
262 mA
S11(dB)
10
-6
-20
2500
2550
2600
+25 C
o
-40 C
o
+85 C
-30
-40
2450
2650
2500
Frequency(MHz)
34
2550
P1dB vs. Frequency
2600
6
o
+25 C
o
-40 C
o
+85 C
-24
-30
2450
2650
2500
2550
2600
2650
Frequency(MHz)
Noise Figure vs. Frequency
5
30
NF(dB)
P1dB(dBm)
-18
Frequency(MHz)
32
28
26
22
2450
4
3
o
+25 C
o
-40 C
o
+85 C
24
2500
2550
2600
2
o
+25 C
1
2450
2650
2500
Frequency(MHz)
2550
2600
2650
Frequency(MHz)
OIP3 vs. Temperature
Output IP3 vs. Frequency
o
+9dBm/tone, +25 C
50
Freq=2550MHz, +9dBm/tone
46
44
OIP3(dBm)
45
OIP3(dBm)
-12
o
o
+25 C
o
-40 C
o
+85 C
8
Output Return Loss
0
-10
12
6
2450
Supply Voltage
Input Return Loss
0
14
Gain(dB)
20pF
S22(dB)
RF IN
40
42
o
+25 C
o
-40 C
o
+85 C
35
30
2450
2500
2550
2600
40
38
-40
2650
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
http://www.prewell.com
Preliminary Data Sheet
6
January 2007
PH530-23
High Linearity InGaP HBT Amplifier
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
+6
V
Supply Current
300
mA
RF Power Input
15
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-223 Package Outline
ESD / MSL Ratings
1. ESD sensitive device.
Observe Handling Precautions.
2. ESD Rating : Class 1C(Passes at 1000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
Mounting Instructions
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
http://www.prewell.com
Preliminary Data Sheet
7
January 2007