DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors Product specification File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification. DESCRIPTION 3 handbook, halfpage 3 NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. 1 MARKING 2 TYPE NUMBER 1 MARKING CODE PMST2222 t1B PMST2222A t1P 2 Top view MAM062 Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter PMST2222 − 60 V PMST2222A − 75 V PMST2222 − 30 V PMST2222A − 40 V − 600 mA mW collector-emitter voltage IC collector current (DC) open base Ptot total power dissipation Tamb ≤ 25 °C − 200 hFE DC current gain IC = 150 mA; VCE = 10 V 100 300 fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz PMST2222 250 − MHz PMST2222A 300 − MHz − 250 ns toff 1997 Jul 14 turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA 2 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS UNIT − 60 V − 75 V PMST2222 − 30 V PMST2222A − 40 V PMST2222 − 5 V PMST2222A − 6 V PMST2222A VEBO MAX. open emitter PMST2222 VCEO MIN. collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 600 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation − 200 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Jul 14 3 VALUE UNIT 625 K/W Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER MIN. MAX. IE = 0; VCB = 50 V − 10 nA IE = 0; VCB = 50 V; Tj = 125 °C − 10 µA IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tj = 125 °C − 10 µA nA collector cut-off current PMST2222A IEBO collector cut-off current IC = 0; VEB = 3 V − 10 hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 − IC = 1 mA; VCE = 10 V 50 − IC = 10 mA; VCE = 10 V 75 − hFE VCEsat IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 PMST2222 30 − PMST2222A 40 − IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 1.6 V IC = 150 mA; IB = 15 mA; note 1 − 300 mV IC = 500 mA; IB = 50 mA; note 1 − 1 V IC = 150 mA; IB = 15 mA; note 1 − 1.3 V IC = 500 mA; IB = 50 mA; note 1 − 2.6 V DC current gain collector-emitter saturation voltage PMST2222A VBEsat base-emitter saturation voltage PMST2222 VBEsat IC = 500 mA; VCE = 10 V; note 1 collector-emitter saturation voltage PMST2222 VCEsat base-emitter saturation voltage PMST2222A IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V IC = 500 mA; IB = 50 mA; note 1 − 2 V − 8 pF PMST2222 − 30 pF PMST2222A − 25 pF PMST2222 250 − MHz PMST2222A 300 − MHz − 4 dB Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz fT F 1997 Jul 14 UNIT collector cut-off current PMST2222 ICBO CONDITIONS transition frequency noise figure IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4 Philips Semiconductors Product specification NPN switching transistors SYMBOL PMST2222; PMST2222A PARAMETER CONDITIONS MIN. MAX. UNIT Switching times (between 10% and 90% levels); see Fig.2 ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns delay time − 15 ns tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns ton turn-on time td Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Jul 14 5 oscilloscope Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1997 Jul 14 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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