CEL PS2701-1-F4-A

PHOTOCOUPLER
PS2701-1
HIGH ISOLATION VOLTAGE
SOP MULTI PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.
It is designed for high density mounting applications.
FEATURES
• High isolation voltage (BV = 3 750 Vr.m.s.)
• SOP (Small Outline Package) type
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• Ordering number of taping product: PS2701-1-F3, F4
• Safety standards
• UL approved: File No. E72422
• BSI approved: File No. 8219/8220
• CSA approved: File No. CA 101391
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Hybrid IC
• Measuring instruments
• Power supply
• Programmable logic controllers
Document No. PN10240EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
The mark  shows major revised points.
© NEC Compound Semiconductor Devices, Ltd. 1988, 2006
PS2701-1
PACKAGE DIMENSIONS (in millimeters)
PS2701-1
4.0±0.5
TOP VIEW
4
1
3
2
1. Anode
2. Cathode
3. Emitter
4. Collector
0.15 +0.10
–0.05
2.0
0.1±0.1
2.1±0.2
7.0±0.3
4.4
2.54
0.5±0.3
0.4 +0.10
–0.05
0.25 M
MARKING EXAMPLE
No. 1 pin Mark
2701
M601
Trade Mark
Type Number
Assembly Lot
*1
M 6 01
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Name
*1 Bar : Pb-Free
Remark "PS" and "-1" are omitted from original type number
2
Data Sheet PN10240EJ02V0DS
PS2701-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard
Application Part
Approval
Number
Specification
PS2701-1
PS2701-1-A
Pb-Free
Magazine case 100 pcs
Standard products
PS2701-1-F3
PS2701-1-F3-A
Embossed Tape 3 500 pcs/reel
(UL, BSI, CSA
PS2701-1-F4
PS2701-1-F4-A
PS2701-1-V
PS2701-1-V-A
Magazine case 100 pcs
DIN EN60747-5-2
PS2701-1-V-F3
PS2701-1-V-F3-A
Embossed Tape 3 500 pcs/reel
(VDE0884 Part2)
PS2701-1-V-F4
PS2701-1-V-F4-A
*1
PS2701-1
approved)
Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
Data Sheet PN10240EJ02V0DS
3
PS2701-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
∆PD/°C
0.8
mW/°C
PD
80
mW
IFP
1
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
6
V
IC
80
mA
∆PC/°C
1.5
mW/°C
PC
150
mW
BV
3 750
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 µs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10240EJ02V0DS
PS2701-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1 MHz
Transistor
Collector to Emitter Dark
Current
ICEO
IF = 0 mA, VCE = 40 V
Coupled
Current Transfer Ratio
CTR
IF = 5 mA, VCE = 5 V
Collector Saturation
Voltage
VCE (sat)
IF = 10 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
Unit
1.1
1.4
V
5
µA
30
50
100
pF
100
nA
300
%
0.3
V
*1
(IC/IF)
Rise Time
Fall Time
*2
tr
*2
VCC = 5 V, IC = 2 mA, RL = 100 Ω
tf
10
Ω
11
0.4
pF
3
µs
5
*1 CTR rank
P: 150 to 300 (%)
L: 100 to 300 (%)
M: 50 to 150 (%)
*2 Test circuit for switching time
Pulse input
VCC
PW = 100 µs,
Duty cycle = 1/10
IF
50 Ω
VOUT
RL = 100 Ω
Data Sheet PN10240EJ02V0DS
5
PS2701-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
100
75
50
25
25
0
50
75
100
50
50
75
100
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TA = +100 ˚C
+75 ˚C
+50 ˚C
1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
0.1
0.8
1.0
1.2
1.4
1.6
40
IF = 30 mA
20 mA
30
15 mA
20
10 mA
10
0
5 mA
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50
10 000
IF = 25 mA
1 000
Collector Current IC (mA)
20
VCE = 40 V
24 V
10 V
100
10
1
10 mA
10
5 mA
5
2
2 mA
1
1 mA
0.5
0.2
0.1
–60 –40
–20
0
20
40
60
80
100
0.1
0.0
Remark
0.2
0.4
0.6
0.8
Collector Saturation Voltage VCE (sat) (V)
Ambient Temperature TA (˚C)
6
25
Ambient Temperature TA (˚C)
Collector Current IC (mA)
Forward Current IF (mA)
1.5 mW/˚C
50
0.01
0.6
Collector to Emitter Dark Current ICEO (nA)
150
0
100
100
10
200
The graphs indicate nominal characteristics.
Data Sheet PN10240EJ02V0DS
1.0
PS2701-1
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
300
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V
0.2
0.0
–50
–25
0
25
50
250
200
150
100
50
0
0.05 0.1
100
75
VCE = 5 V
0.5
1
5
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
1.2
VCC = 5 V,
IC = 2 mA
50
1.0
Normalized Gain GV
ton
toff
10
50
10
Ambient Temperature TA (˚C)
100
Switching Time t ( µ s)
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
1.2
5
td
ts
1
0.5
RL = 1 kΩ
510 Ω
300 Ω
100 Ω
0.8
0.6
0.4
0.2
0.1
50
100
200
500
0.0
2
2k
1k
5
10
Load Resistance RL (Ω)
LONG TERM CTR DEGRADATION
ts
tr
td
1
0.5
1.0
CTR (Relative Value)
Switching Time t ( µ s)
500
tf
10
5
0.8
IF = 1 mA, TA = 25 ˚C
IF = 5 mA, TA = 25 ˚C
IF = 20 mA, TA = 25 ˚C
IF = 20 mA, TA = 60 ˚C
0.6
0.4
0.2
500 1 k
5 k 10 k
50 k 100 k
0.0
1
102
103
104
105
106
Time (Hr)
Load Resistance RL (Ω)
Remark
100 200
1.2
100
50
0.1
100
50
Frequency f (kHz)
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
IF = 5 mA, VCC = 5 V,
500 CTR = 169 %
20
The graphs indicate nominal characteristics.
Data Sheet PN10240EJ02V0DS
7
PS2701-1
TAPING SPECIFICATIONS (in millimeters)
1.55±0.1
2.9 MAX.
7.4±0.1
5.5±0.05
1.5+0.1
–0
12.0±0.2
2.0±0.05
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
2.4±0.1
4.6±0.1
0.3
8.0±0.1
Tape Direction
PS2701-1-F4
PS2701-1-F3
Outline and Dimensions (Reel)
φ 21.0±0.8
φ 13.0±0.2
R 1.0
φ 100±1.0
2.0±0.5
φ13.0±0.2
φ 330±2.0
2.0±0.5
13.5±1.0
17.5±1.0
11.9 to 15.4
Outer edge of
flange
Packing: 3 500 pcs/reel
8
Data Sheet PN10240EJ02V0DS
PS2701-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10240EJ02V0DS
9
PS2701-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to
photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially
below IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the
like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
10
Data Sheet PN10240EJ02V0DS
PS2701-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Symbol
Speck
Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
IV
for rated line voltages ≤ 600 Vr.m.s.
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength
Maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
UIORM
710
Vpeak
Upr
850
Vpeak
Upr
1 140
Vpeak
UTR
6 000
Vpeak
Upr = 1.2 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
2
Clearance distance
>5
mm
Creepage distance
>5
mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
CTI
Material group (DIN VDE 0109)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
VIO = 500 V dc at TA MAX. at least 100 °C
Ris MIN.
12
Ω
11
10
Ω
10
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature
Tsi
150
°C
Current (input current IF, Psi = 0)
Isi
200
mA
Power (output or total power dissipation)
Psi
300
mW
Ris MIN.
10
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi)
Data Sheet PN10240EJ02V0DS
9
Ω
11
PS2701-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
• The information in this document is current as of March, 2006. The information is subject to change
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4 - 0110
12
Data Sheet PN10240EJ02V0DS
PS2701-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
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TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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