DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for high density applications. Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal transfer circuits that require surface or high-density mounting. FEATURES • Operating ambient temperature: 110°C PIN CONNECTION (Top View) • Isolation distance (0.4 mm MIN.) • High isolation voltage (BV = 3 750 Vr.m.s.) 4 3 • Shrink SOP (Small Outline Package) type • High-speed switching (tr = 4 μs TYP., tf = 5 μs TYP.) 1. Anode 2. Cathode 3. Emitter 4. Collector • Embossed tape product: PS2861B-1-F3: 3 500 pcs/reel • Pb-Free product <R> <R> • Safety standards • UL approved: No. E72422 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • BSI approved: No. 8979/8980 1 • SEMKO approved: No. 908508 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024453 (Option) 2 APPLICATIONS • Power supply • Programmable logic controllers The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PN10742EJ02V0DS (2nd edition) Date Published March 2010 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2009, 2010 PS2861B-1 PACKAGE DIMENSIONS (UNIT : mm) 2.7±0.3 4 3 1 2 7.0±0.3 0.15+0.10 –0.05 2.0±0.1 0.1±0.1 4.4 0.5±0.3 1.27 0.4±0.1 0.12 M PHOTOCOUPLER CONSTRUCTION Parameter <R> Unit (MIN.) Air Distance 5.0 mm Creepage Distance 5.0 mm Isolation Distance 0.4 mm MARKING EXAMPLE Last Number of Type Number: 1B N1B 031 Assembly Lot *1 An initial of "NEC" 0 31 Week Assembled Year Assembled (Last 1 Digit) *1 Bar: Pb-Free and Halogen Free 2 Data Sheet PN10742EJ02V0DS PS2861B-1 <R> ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Application Approval Part Number Specification etc. PS2861B-1 PS2861B-1Y-A Pb-Free and Magazine case 100 pcs Standard products PS2861B-1-F3 PS2861B-1Y-F3-A Halogen Free Embossed Tape 3 500 pcs/reel (UL, CSA, BSI, *1 PS2861B-1 SEMKO approved) PS2861B-1-V PS2861B-1Y-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2861B-1-V-F3 PS2861B-1Y-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2) approved (Option) *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Diode Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ΔPD/°C 0.6 mW/°C Power Dissipation Derating Power Dissipation PD 60 mW *1 IFP1 2.5 A Peak Forward Current2 *2 IFP2 1.0 Collector to Emitter Voltage VCEO 70 V Emitter to Collector Voltage VECO 5 V IC 50 mA ΔPC/°C 1.2 mW/°C PC 120 mW BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +110 °C Storage Temperature Tstg –55 to +150 °C Peak Forward Current1 Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *3 *1 PW = 10 μs, Duty Cycle = 1% *2 PW = 100 μs, Duty Cycle = 1% *3 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. Data Sheet PN10742EJ02V0DS 3 PS2861B-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Transistor Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Collector to Emitter Dark MIN. TYP. MAX. Unit 1.1 1.4 V 5 μA 15 ICEO IF = 0 mA, VCE = 24 V CTR IF = 5 mA, VCE = 5 V 50 150 IF = 1 mA, VCE = 5 V 10 50 pF 100 nA 300 % 0.3 V Current Coupled Current Transfer Ratio *1 (IC/IF) Collector Saturation VCE (sat) IF = 10 mA, IC = 2 mA Voltage Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz Rise Time *2 tr *2 tf Fall Time 10 VCC = 5 V, IC = 2 mA, RL = 100 Ω Ω 11 0.4 pF 4 μs 5 *1 CTR rank CTR Rank CTR (%) Conditions 100 to 300 IF = 5 mA, VCE = 5 V 20 and larger IF = 1 mA, VCE = 5 V 50 to 150 IF = 5 mA, VCE = 5 V 10 and larger IF = 1 mA, VCE = 5 V 50 to 300 IF = 5 mA, VCE = 5 V 10 and larger IF = 1 mA, VCE = 5 V L M N *2 Test circuit for switching time Pulse Input VCC Input PW = 100 μ s Duty cycle = 1/10 ton td IF In monitor toff ts VOUT 50 Ω RL = 100 Ω 90% Output 10% tr 4 Data Sheet PN10742EJ02V0DS tf PS2861B-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 0.6 mW/°C 80 60 40 20 0 25 50 75 100110 125 1.2 mW/°C 180 160 140 120 100 80 60 40 20 0 25 50 100110 125 75 Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 TA = +100°C +60°C +25°C 10 5 0°C –25°C –55°C 1 0.5 25 20 IF = 10 mA 15 10 5 mA 3 mA 5 2 mA 1 mA 0.1 0.05 0.7 150 Ambient Temperature TA (°C) Collector Current IC (mA) Forward Current IF (mA) 50 200 150 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 Forward Voltage VF (V) 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 000 COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100.0 VCE = 24 V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) <R> 100 10 1 0.1 0 20 40 60 80 100 120 10.0 5 mA 3 mA 2 mA 1.0 0.1 0 Ambient Temperature TA (°C) Remark IF = 10 mA 1 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Saturation Voltage VCE (sat) (V) The graphs indicate nominal characteristics. Data Sheet PN10742EJ02V0DS 5 PS2861B-1 CTR = 160%@TA = 25°C 1.4 1.2 1.0 100%@TA = 25°C 0.8 0.6 0.4 Normalized to 1.0 0.2 at TA = 25°C, IF = 1 mA, VCE = 5 V 0 –60 –40 –20 0 20 100 Switching Time t ( μ s) Normalized Current Transfer Ratio CTR 1.6 40 60 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 80 100 120 1.6 1.4 100%@TA = 25°C 1.2 1.0 0.8 CTR = 160%@TA = 25°C 0.6 0.4 Normalized to 1.0 0.2 at TA = 25°C, IF = 5 mA, VCE = 5 V 0 –60 –40 –20 0 20 SWITCHING TIME vs. LOAD RESISTANCE 1 000 IC = 2 mA, VCC = 5 V, CTR = 100% IF = 5 mA, VCC = 5 V, CTR = 100% td ts 1 0.1 10 100 1 000 tf 100 ts 10 tr td 1 0.1 0.1 10 000 1 Load Resistance RL (Ω) 100 FREQUENCY RESPONSE 5 VCE = 5 V, n=3 0 Normalized Gain GV Current Transfer Ratio CTR (%) 10 Load Resistance RL (kΩ) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 200 150 Sample A B C 100 –5 100 Ω –10 300 Ω –15 IF = 5 mA, VCE = 5 V 1 10 100 –25 0.1 1 10 Frequency f (kHz) Forward Current IF (mA) Remark RL = 1 kΩ –20 50 0 0.1 6 80 100 120 SWITCHING TIME vs. LOAD RESISTANCE 10 250 60 Ambient Temperature TA (°C) tf tr 300 40 Ambient Temperature TA (°C) Switching Time t ( μ s) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE The graphs indicate nominal characteristics. Data Sheet PN10742EJ02V0DS 100 1 000 PS2861B-1 TAPING SPECIFICATIONS (UNIT : mm) 2.0±0.1 φ 1.5+0.1 –0 16.0±0.3 7.5±0.1 4.0±0.1 7.55±0.1 1.75±0.1 Outline and Dimensions (Tape) 2.8 MAX. 0.3 1.55±0.1 2.3±0.1 2.85±0.1 4.0±0.1 Tape Direction PS2861B-1-F3 N1B 031 N1B 031 N1B 031 N1B 031 N1B 031 Outline and Dimensions (Reel) R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 17.5±1.0 21.5±1.0 Packing: 3 500 pcs/reel Data Sheet PN10742EJ02V0DS 15.9 to 19.4 Outer edge of flange 7 PS2861B-1 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 1.27 0.8 1.45 6.25 Remark 8 All dimensions in this figure must be evaluated before use. Data Sheet PN10742EJ02V0DS PS2861B-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. Data Sheet PN10742EJ02V0DS 9 PS2861B-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. 10 Data Sheet PN10742EJ02V0DS PS2861B-1 <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Spec. Unit 55/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 710 Vpeak Upr 1 065 Vpeak Upr 1 331 Vpeak UTR 6 000 Vpeak Upr = 1.5 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +110 °C VIO = 500 V dc at TA = 25°C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. 10 11 Ω Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = Tsi Data Sheet PN10742EJ02V0DS 9 Ω 11 PS2861B-1 • The information in this document is current as of March, 2010. 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