NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 80, BSS 82 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BSS 79 B BSS 79 C BSS 81 B BSS 81 C CEs CFs CDs CGs Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 B SOT-23 E C Maximum Ratings Parameter Symbol BSS 79 Values BSS 81 Unit Collector-emitter voltage VCE0 Collector-base voltage VCB0 75 Emitter-base voltage VEB0 6 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 77 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 40 35 V mA A mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 Junction - soldering point Rth JS ≤ 220 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 40 35 – – – – DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA V(BR)CB0 75 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 6 – – Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C ICB0 – – – – 10 10 nA µA Emitter-base cutoff current VEB = 3 V IEB0 – – 10 nA DC current gain IC = 100 µA, VCE = 10 V hFE IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C VCEsat Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 – 20 35 25 50 35 75 40 100 25 40 Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) V – – – – – – – – – – – – – – – – 120 300 – – V – – – – 0.3 1.3 – – – – 1.2 2.0 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz fT – 250 – MHz Open-circuit output capacitance VCB = 10 V, f = 1 MHz Cobo – 6 – pF td tr tstg tf – – – – – – – – 10 25 250 60 ns ns ns ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, VBE = 0.5 V Delay time Rise time Storage time Fall time Test circuits Delay and rise time Oscillograph: Storage and fall time R > 100 kΩ C < 12 pF tr < 5 ns Semiconductor Group 3 BSS 79 BSS 81 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 BSS 79 BSS 81 Saturation voltage IC = f (VBE sat) IC = f (VCE sat) hFE = 10 DC current gain hFE = f (IC) VCE = 10 V Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 5