PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BF 721 BF 723 BF 721 BF 723 Q62702-F1239 Q62702-F1309 B SOT-223 C E C Maximum Ratings Parameter Symbol BF 721 Values BF 723 Unit Collector-emitter voltage VCE0 VCER – 300 250 – Collector-base voltage VCB0 300 250 Emitter-base voltage VEB0 5 5 Collector current IC 50 Peak collector current ICM 100 Total power dissipation, TS ≤ 110 ˚C2) Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 87 Junction - soldering point Rth JS ≤ 27 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 07.94 BF 721 BF 723 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 723 V(BR)CE0 250 – – V Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ BF 721 V(BR)CER 300 – – Collector-base breakdown voltage IC = 10 µA, IB = 0 BF 721 BF 723 V(BR)CB0 300 250 – – – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 5 – – Collector-base cutoff current VCB = 200 V, IE = 0 ICB0 – – 10 nA Collector-emitter cutoff current VCE = 200 V, RBE = 2.7 kΩ VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C ICER – – – – 50 10 nA µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 – – 10 µA DC current gain1) IC = 25 mA, VCE = 20 V hFE 50 – – – Collector-emitter saturation voltage IC = 30 mA, IB = 5 mA VCEsat – – 0.6 V Transition frequency IC = 10 mA, VCE = 10 V, f = 100 MHz fT – 100 – MHz Collector-base capacitance VCB = 30 V, IC = 0, f = 1 MHz Cobo – 0.8 – pF AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BF 721 BF 723 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) VCB = 200 V Collector current IC = f (VBE) VCE = 20 V Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 3 BF 721 BF 723 DC current gain hFE = f (IC) VCE = 20 V Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Cobo = f (VCB) IC = 0, f = 1 MHz Semiconductor Group 4