Silicon PIN Diodes BXY 42BA-S BXY 42BB-S Beam lead version ● Fast switching ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package1) BXY 42BA-S – Q62702-X151 Pointed cathode S BXY 42BB-S Q62702-X159 Maximum Ratings Parameter Symbol Values BXY 42BA-S BXY 42BB-S 30 Reverse voltage VR 50 Junction temperature Tj 175 Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 1) For detailed information see chapter Package Outlines. Unit V ˚C BXY 42BA-S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Breakdown voltage IR = 10 µA V(BR) 50 – – V Forward voltage IF = 50 mA VF – 1.0 – Reverse current VR = 40 V IR – – 5 nA Storage time IF = 10 mA, VR = 10 V ts – 3 – ns Diode capacitance VR = 30 V, f = 1 MHz CT – – 0.08 pF Charge carrier life time IF = 10 mA, IR = 6 mA τL – 30 – ns Forward resistance f = 100 MHz, IF = 10 mA rf – 1.8 – Ω BXY 42BA-S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Breakdown voltage IR = 10 µA V(BR) 30 – – V Forward voltage IF = 50 mA VF – 1.1 – Reverse current VR = 20 V IR – – 5 nA Storage time IF = 10 mA, VR = 10 V ts – 2 – ns Diode capacitance VR = 20 V, f = 1 MHz CT – – 0.15 pF Charge carrier life time IF = 10 mA, IR = 6 mA τL – 20 – ns Forward resistance f = 100 MHz, IF = 10 mA rf – 1.3 – Ω