Silicon PIN Diode ● Microwave attenuator diode ● Linear RF characteristic BXY 44K Type Marking Ordering Code Pin Configuration Package1) BXY 44K – Q62702-X148 Cathode: black dot, heat sink T1 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 200 V Forward current IF 0.5 A Peak forward current, tp =1 µs IFRM 20 Total power dissipation Ptot 600 mW Junction temperature Tj 175 ˚C Storage temperature range Tstg – 65 … + 150 Operating temperature range Top – 65 … + 150 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BXY 44K Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Breakdown voltage IR = 10 µA V(BR) 200 – – Forward voltage IR = 100 mA VF – – 1 Reverse current VR = 100 V IR – – 10 nA Storage time IF = 10 mA, VR = 10 V ts – 50 – ns Diode capacitance VR = 50 V, f = 1 MHz CT – – 0.4 pF Case capacitance CC – 0.1 – Charge carrier life time IF = 10 mA, IR = 6 mA τL – 0.5 – Forward resistance f = 100 MHz, IF = 10 µA f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 10 mA rf – – – 1000 25 3.5 – – – Semiconductor Group 2 V µs Ω