RICOH R1113Z151B-TR

LOW NOISE 150mA LDO REGULATOR
R1113Z SERIES
NO. EA-101-0504
OUTLINE
The R1113Z Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference
unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit.
These ICs perform with low dropout voltage and a chip enable function. The line transient response and load
transient response of the R1113Z Series are excellent, thus these ICs are very suitable for the power supply for
hand-held communication equipment.
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is WL-CSP4-P1
(Wafer Level CSP), high density mounting of the ICs on boards is possible.
FEATURES
•
•
•
•
•
•
•
•
•
•
Ultra-Low Supply Current................................................ Typ. 100µA
Standby Mode ................................................................. Typ. 0.1µA
Low Dropout Voltage....................................................... Typ. 0.23V (IOUT=100mA 3.0V Output type)
High Ripple Rejection ..................................................... Typ. 80dB(f=1kHz 3.0V Output type)
Low Temperature-Drift Coefficient of Output Voltage...... Typ. ±100ppm/°C
Excellent Line Regulation ............................................... Typ. 0.05%/V
High Output Voltage Accuracy ........................................ ±2.0%
Excellent Dynamic Response
Small Package .............................................................. WL-CSP4-P1 (Wafer Level CSP)
Output Voltage .................................................. ............. Stepwise setting with a step of 0.1V in the range
of 1.5V to5.0V is possible
• Built-in Chip Enable Circuit (2 types; A: active low, B: active high)
• Built-in Fold Back Protection Circuit ............................... Typ. 30mA (Current at short mode)
• Ceramic capacitors are recommended to be used with this IC
APPLICATIONS
• Power source for cellular phones such as GSM, CDMA and various kinds of PCS.
• Power source for electrical appliances such as cameras, VCRs and camcorders.
• Power source for battery-powered equipment.
1
R1113Z
BLOCK DIAGRAM
R1113Zxx1A
R1113Zxx1B
2 VOUT
VDD 3
2 VOUT
VDD 3
-
-
+
+
Vref
Vref
Current Limit
Current Limit
1 GND
CE 4
CE 4
1 GND
SELECTION GUIDE
The output voltage, the active type, the packing type, and the taping type for the ICs can be selected at the
user's request. The selection can be made with designating the part number as shown below;
R1113xxx1x-xx
↑↑
a b
Code
a
b
c
d
2
←Part Number
↑ ↑
c d
Contents
Designation of Package Type :
Z:WL-CSP4-P1 (Wafer Level CSP)
Setting Output Voltage (VOUT) :
Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible.
Designation of Active Type :
A : active low type
B : active high type
Designation of Taping Type :
Ex. TR, TL (refer to Taping Specifications; TR type is the standard direction.)
R1113Z
PIN CONFIGURATION
WL-CSP4-P1
3 VDD
4 CE
4
3
2 VOUT
1 GND
1
2
Bottom View
Top View
PIN DESCRIPTION
Pin No
Symbol
Description
1
GND
Ground Pin
2
VOUT
Output pin
3
VDD
Input Pin
4
CE or CE
Chip Enable Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
7.0
V
VIN
Input Voltage
VCE
Input Voltage( CE or CE Pin)
-0.3 ~ VIN+0.3
V
VOUT
Output Voltage
-0.3 ~ VIN+0.3
V
IOUT
Output Current
200
mA
PD
Power Dissipation
190
mW
Topt
Operating Temperature Range
-40 ~ 85
°C
Tstg
Storage Temperature Range
-55 ~ 125
°C
3
R1113Z
Power Dissipation
Typical Characteristics
∗Measurement Conditions
Mounted on board (Wind velocity=0m/s)
Board Material: FR-4 (Double-layer)
Board Size: 40mm×40mm×t1.6mm
Wiring area ratio against the board: 50%
∗Result
Power dissipation 465mW
Thermal Resistance 215°C/W
700
Power Dissipation(mW)
600
500
400
300
WL-CSP-4
200
100
0
0
25
50
75
100
Temperature Topt(°C)
4
125
R1113Z
ELECTRICAL CHARACTERISTICS
•
R1113Zxx1A
Symbol
Item
Conditions
VOUT
Output Voltage
VIN = Set VOUT+1V
IOUT
Output Current
VIN − VOUT = 1.0V
Min.
1mA <
= IOUT <
= 30mA
Typ.
VOUT×0.98
Max.
Unit
VOUT×1.02
V
150
1mA <
= IOUT <
= 80mA
mA
∆VOUT/∆IOUT
Load Regulation
VIN = Set VOUT+1V
VDIF
Dropout Voltage
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS
Supply Current
VIN = Set VOUT+1V
Supply Current (Standby)
VIN = VCE = Set VOUT+1V
∆VOUT/∆VIN
Line Regulation
Set VOUT+0.5V <
= VIN <
= 6V
RR
Ripple Rejection
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
VIN
Input Voltage
Istandby
20
IOUT = 30mA
IOUT = 30mA
ILIM
Short Current Limit
VOUT = 0V
RPU
CE Pull-up Resistance
2.5
VCEH
CE Input Voltage “H”
VCEL
CE Input Voltage “L”
en
Output Noise
45
mV
100
170
µA
0.1
1.0
µA
0.05
0.20
%/V
6.0
V
2.0
Output Voltage
Temperature Coefficient
∆VOUT/∆T
•
Topt=25°C
−40°C <
= Topt <
= 85°C
±100
ppm/°C
30
mA
10.0
MΩ
1.5
VIN
V
0.00
0.25
V
BW=10Hz to 100kHz
5.0
µVrms
30
R1113Zxx1B
Symbol
Topt=25°C
Item
Conditions
1mA <
= IOUT <
= 30mA
Min.
Typ.
Unit
VOUT×1.02
V
VOUT
Output Voltage
VIN = Set VOUT+1V
IOUT
Output Current
VIN − VOUT = 1.0V
∆VOUT/∆IOUT
Load Regulation
VIN = Set VOUT+1V
VDIF
Dropout Voltage
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS
Supply Current
VIN = Set VOUT+1V
Supply Current (Standby)
∆VOUT/∆VIN
RR
Istandby
VIN
VOUT×0.98
Max.
150
1mA <
= IOUT <
= 80mA
45
mV
100
170
µA
VIN = VCE = Set VOUT+1V
0.1
1.0
µA
Line Regulation
Set VOUT+0.5V <
= VIN <
= 6V
IOUT = 30mA
0.05
0.20
%/V
Ripple Rejection
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
6.0
V
Input Voltage
20
2.0
Output Voltage
Temperature Coefficient
IOUT = 30mA
ILIM
Short Current Limit
VOUT = 0V
RPU
CE Pull-up Resistance
2.5
VCEH
CE Input Voltage “H”
VCEL
CE Input Voltage “L”
∆VOUT/∆T
en
mA
Output Noise
−40°C <
= Topt <
= 85°C
BW=10Hz to 100kHz
±100
ppm/°C
30
mA
5.0
10.0
MΩ
1.5
VIN
V
0.00
0.25
V
30
µVrms
5
R1113Z
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage
VDIF (V)
Condition
Typ.
0.50
0.45
0.40
0.34
IOUT = 100mA
0.28
0.25
0.24
0.23
Output Voltage VOUT (V)
2.0
2.4
2.8
<
=
<
=
<
=
1.5
1.6
1.7
1.8
1.9
VOUT
VOUT
VOUT
<
=
<
=
<
=
2.3
2.7
5.0
Max.
0.70
0.65
0.60
0.55
0.44
0.35
0.29
0.26
Topt = 25°C
Ripple Rejection
RR (dB)
Condition
Typ.
80
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V
70
Output Voltage VOUT (V)
1.5
4.1
<
=
<
=
VOUT
VOUT
<
=
<
=
4.0
5.0
Max.
OPERATION
R1113Zxx1A
R1113Zxx1B
2 VOUT
VDD 3
2 VOUT
VDD 3
-
+
+
R1
Vref
Vref
Current Limit
CE 4
R1
R2
Current Limit
1 GND
CE 4
R2
1 GND
In these ICs, fluctuation of output voltage, VOUT is detected by feedback registers R1, R2, and the result is
compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit
circuit for protection in short mode and a chip enable circuit, are included.
6
R1113Z
TECHNICAL NOTES
When using these ICs, consider the following points:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance).
We use Ceramic Capacitors for evaluation of these ICs.
Recommended Capacitors ; GRM40X5R225K6.3 (Murata)
GRM40-034X5R335K6.3 (Murata)
GRM40-034X5R475K6.3 (Murata)
(Note: When the additional ceramic capacitors are connected to the output pin with an output capacitor for phase
compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor with a capacitance value as much as 2.2µF or more between VDD and GND pin, and as
close as possible to the pins.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
7
R1113Z
TEST CIRCUITS
CE
CE
4
4
VOUT
VDD
IN
R1113Zxx1B
Series
3
2
VOUT
VDD
IN
IOUT
3
ISS
R1113Zxx1B
Series
2.2µF
1
2.2µF
OUT
GND
Fig.1 Standard test Circuit
Fig.2 Supply Current Test Circuit
CE
CE
4
4
VOUT
VDD
3
P.G
R1113Zxx1B
Series
OUT
2.2µF
1
2.2µF
GND
IN
2
2
OUT
VOUT
VDD
IN
3
IOUT
R1113Zxx1B
Series
OUT
2
2.2µF
2.2µF
1
2.2µF
GND
1
GND
I1
Fig.3 Ripple Rejection, Line Transient
Response Test Circuit
I2
Fig.4 Load Transient Response Test Circuit
TYPICAL APPLICATION
CE
CE
VDD R1113Zxx1A VOUT
Series
IN
+
Cap.
OUT
+
GND
Cap.
VDD R1113Zxx1B VOUT
Series
IN
+
Cap.
+
GND
(External Components)
Output Capacitor ; Ceramic 2.2µF (Set Output Voltage in the range from 2.6 to 5.0V)
Ceramic 4.7µF (Set Output Voltage in the range from 1.5 to 2.5V)
Input Capacitor ; Ceramic 2.2µF
8
OUT
Cap.
R1113Z
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
Topt=25°C
R1113Z201B
R1113Z301B
3.5
Output Voltage VOUT(V)
Output Voltage VOUT(V)
2.5
2
VIN=2.3V
VIN=2.5V
VIN=3.0V
VIN=4.0V
1.5
1
0.5
0
3
2.5
VIN=3.3V
VIN=3.5V
VIN=4.0V
VIN=5.0V
2
1.5
1
0.5
0
0
100
200
300
400
500
0
Output Current IOUT(mA)
100
R1113Z401B
400
500
R1113Z501B
6
Output Voltage VOUT(V)
Output Voltage VOUT(V)
300
Output Current IOUT(mA)
5
4
VIN=4.3V
VIN=4.5V
VIN=5.0V
VIN=6.0V
3
2
1
5
VIN=5.3V
VIN=5.5V
VIN=6.0V
VIN=7.0V
4
3
2
1
0
0
0
100
200
300
400
500
0
Output Current IOUT(mA)
2) Output Voltage vs. Input Voltage
100
200
300
400
500
Output Current IOUT(mA)
Topt=25°C
R1113Z201B
R1113Z301B
3.2
Output Voltage VOUT(V)
2.2
Output Voltage VOUT(V)
200
2
1.8
1.6
1.4
IOUT=1mA
IOUT=30mA
IOUT=50mA
1.2
1
3
2.8
2.6
2.4
IOUT=1mA
IOUT=30mA
IOUT=50mA
2.2
2
1
2
3
4
5
Input Voltage VIN(V)
6
7
1
2
3
4
5
6
7
Input Voltage VIN(V)
9
R1113Z
R1113Z401B
R1113Z501B
5.2
Output Voltage VOUT(V)
Output Voltage VOUT(V)
4.2
4
3.8
3.6
3.4
IOUT=1mA
IOUT=30mA
IOUT=50mA
3.2
3
5
IOUT=1mA
IOUT=30mA
IOUT=50mA
4.8
4.6
4.4
4.2
4
1
2
3
4
5
6
7
1
Input Voltage VIN(V)
2
3
4
5
6
7
Input Voltage VIN(V)
3) Dropout Voltage vs. Output Current
R1113Z201B
R1113Z301B
0.6
Dropout Voltage VDIF(V)
Dropout Voltage VDIF(V)
0.6
0.5
Topt=-40˚C
Topt=25˚C
Topt=85˚C
0.4
0.3
0.2
0.1
0.0
0.5
Topt=-40˚C
Topt=25˚C
Topt=85˚C
0.4
0.3
0.2
0.1
0.0
0
50
100
150
0
Output Current IOUT(mA)
R1113Z401B
150
0.6
Dropout Voltage VDIF(V)
Dropout Voltage VDIF(V)
100
R1113Z501B
0.6
0.5
Topt=-40˚C
Topt=25˚C
Topt=85˚C
0.4
0.3
0.2
0.1
0.0
0.5
Topt=-40˚C
Topt=25˚C
Topt=85˚C
0.4
0.3
0.2
0.1
0.0
0
50
100
Output Current IOUT(mA)
10
50
Output Current IOUT(mA)
150
0
50
100
Output Current IOUT(mA)
150
R1113Z
4) Output Voltage vs. Temperature
R1113Z201B
R1113Z301B
VIN=3.0V, IOUT=30mA
VIN=4.0V, IOUT=30mA
3.06
2.03
Output Voltage VOUT(V)
Output Voltage VOUT(V)
2.04
2.02
2.01
2.00
1.99
1.98
1.97
1.96
-50
-25
0
25
50
75
3.04
3.02
3.00
2.98
2.96
2.94
-50
100
-25
0
Temperature Topt(˚C)
R1113Z401B
R1113Z501B
Output Voltage VOUT(V)
Output Voltage VOUT(V)
4.06
4.04
4.02
4.00
3.98
3.96
3.94
0
25
50
75
100
5.10
5.08
5.06
5.04
5.02
5.00
4.98
4.96
4.94
4.92
4.90
-50
-25
Temperature Topt(˚C)
5) Supply Current vs. Input Voltage
100
0
25
50
75
100
6
7
Temperature Topt(˚C)
Topt=25°C
R1113Z201B
R1113Z301B
100
Supply Current ISS(µA)
100
Supply Current ISS(µA)
75
VIN=6.0V, IOUT=30mA
4.08
-25
50
Temperature Topt(˚C)
VIN=5.0V, IOUT=30mA
3.92
-50
25
80
60
40
20
0
80
60
40
20
0
1
2
3
4
5
Input Voltage VIN(V)
6
7
1
2
3
4
5
Input Voltage VIN(V)
11
R1113Z
R1113Z401B
R1113Z501B
100
Supply Current ISS(µA)
Supply Current ISS(µA)
100
80
60
40
20
0
80
60
40
20
0
1
2
3
4
5
6
7
1
2
Input Voltage VIN(V)
3
4
5
6
7
Input Voltage VIN(V)
6) Supply Current vs. Temperature
R1113Z201B
R1113Z301B
VIN=3.0V
VIN=4.0V
200
Supply Current ISS(µA)
Supply Current ISS(µA)
200
150
100
50
0
-50
-25
0
25
50
75
150
100
50
0
-50
100
-25
0
25
50
Temperature Topt(˚C)
Temperature Topt(˚C)
R1113Z401B
R1113Z501B
VIN=5.0V
Supply Current ISS(µA)
Supply Current ISS(µA)
200
150
100
50
-25
0
25
50
Temperature Topt(˚C)
12
100
VIN=6.0V
200
0
-50
75
75
100
150
100
50
0
-50
-25
0
25
50
Temperature Topt(˚C)
75
100
R1113Z
7) Dropout Voltage vs. Set Output Voltage
R1113Zxx1B
Dropout Voltage VDIF(V)
0.5
25mA
50mA
100mA
150mA
0.4
0.3
0.2
0.1
0.0
0.0
1.0
2.0
3.0
4.0
5.0
Set Output Voltage VREG(V)
8) Ripple Rejection vs. Frequency
R1113Z201B
R1113Z301B
VIN=3.0V+0.5Vp-p, COUT=ceramic 4.7µF
VIN=4.0V+0.5Vp-p, COUT=ceramic 2.2µF
90
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
120
100
80
60
IOUT=1mA
IOUT=30mA
IOUT=50mA
40
20
0
0.1
1
10
80
70
60
50
40
IOUT=1mA
IOUT=30mA
IOUT=50mA
30
20
10
0
0.1
100
Frequency f(kHz)
R1113Z401B
R1113Z501B
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
70
80
70
60
50
40
IOUT=1mA
IOUT=30mA
IOUT=50mA
10
0
0.1
100
VIN=6.0V+0.5Vp-p, COUT=ceramic 2.2µF
90
20
10
Frequency f(kHz)
VIN=5.0V+0.5Vp-p, COUT=ceramic 2.2µF
30
1
1
10
Frequency f(kHz)
100
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
1
10
100
Frequency f(kHz)
13
R1113Z
9) Ripple Rejection vs. Input Voltage (DC bias)
R1113Z301B
R1113Z301B
IOUT=30mA, COUT=ceramic 2.2µF
90
80
80
70
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
IOUT=1mA, COUT=ceramic 2.2µF
70
60
50
40
f=400Hz
f=1kHz
f=10kHz
30
20
10
0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
60
50
40
f=400Hz
f=1kHz
f=10kHz
30
20
10
0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
R1113Z301B
IOUT=50mA, COUT=ceramic 2.2µF
Ripple Rejection RR(dB)
80
70
60
50
40
f=400Hz
f=1kHz
f=10kHz
30
20
10
0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
10) Input Transient Response
R1113Z201B
VIN
VOUT
14
Topt=25°C
VIN=3.0V↔4.0V
IOUT=30mA
CIN =none
COUT=4.7µF
tr/tf=5µs
3.5
R1113Z
R1113Z301B
Topt=25°C
VIN=4.0V↔5.0V
IOUT=30mA
CIN=none
COUT=2.2µF
tr/tf=5µs
VIN
VOUT
R1113Z401B
Topt=25°C
VIN=5.0V↔6.0V
IOUT=30mA
CIN=none
COUT=2.2µF
tr/tf=5µs
VIN
VOUT
R1113Z501B
VIN
Topt=25°C
VIN=6.0V↔7.0V
IOUT=30mA
CIN=none
COUT=2.2µF
tr/tf=5µs
VOUT
15
R1113Z
11) Load Transient Response
R1113Z201B
Topt=25°C
IOUT=50mA↔100mA
VIN=3.0V
CIN=2.2µF
COUT=4.7µF
tr/tf=5µs
IOUT
VOUT
R1113Z301B
Topt=25°C
IOUT=50mA↔100mA
VIN=4.0V
CIN=2.2µF
COUT=2.2µF
tr/tf=5µs
IOUT
VOUT
R1113Z401B
IOUT
VOUT
16
Topt=25°C
IOUT=50mA↔100mA
VIN=5.0V
CIN=2.2µF
COUT=2.2µF
tr/tf=5µs
R1113Z
R1113Z501B
Topt=25°C
IOUT=50mA↔100mA
VIN=6.0V
CIN=2.2µF
COUT=2.2µF
tr/tf=5µs
IOUT
VOUT
TECHNICAL NOTES
When using these ICs, consider the following points:
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance)
of which is in the range described as follows:
4
VOUT
CE
R1113Zxx1B
3
VIN
Ceramic
Cap.
2
Ceramic
Cap.
VIN
GND
1
S.A.
ESR
Spectrum
Analyzer
IOUT
Measuring Circuit for white noise; R1113Zxx1B
17
R1113Z
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions
when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph.
(Note: If additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase
compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
<Measurement conditions>
(1)
VIN=VOUT+1V
(2)
Frequency Band: 10Hz to 1MHz
(3)
Temperature: 25°C
R1113Z201B
R1113Z201B
COUT=4.7µF, CIN=2.2µF
100
100
10
10
1
1
ESR (Ω)
ESR (Ω)
COUT=2.2µF, CIN=2.2µF
0.1
0.01
0.1
0.01
0.001
0.001
0
30
60
90
120
150
0
30
60
IOUT(mA)
R1113Z301B
R1113Z301B
100
10
10
1
1
0.1
0.01
120
150
COUT=4.7µF, CIN=2.2µF
100
ESR (Ω)
ESR (Ω)
COUT=2.2µF, CIN=2.2µF
0.1
0.01
0.001
0.001
0
30
60
90
IOUT(mA)
18
90
IOUT(mA)
120
150
0
30
60
90
IOUT(mA)
120
150