< Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) • Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-450MHz PACKAGE CODE: H2RS • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Reverse PIN type • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE • RA45H4045MR-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H4045MR-101 Antistatic tray, 10 modules/tray Publication Date : Oct．2011 1 < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power 55 W Operation Case Temperature Range -30 to +110 °C Storage Temperature Range -40 to +110 °C Tcase(OP) Tstg f=400-450MHz, ZG=ZL=50 Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER f Pout T CONDITIONS Frequency Range Output Power Total Efficiency nd 2fo 2 in Input VSWR Harmonic IGG Gate Current — Stability — Load VSWR Tolerance VDD=12.5V VGG=5V Pin=50mW VDD=10.0-15.2V, Pin=25-70mW, Pout<55W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=45W (VGG control), Load VSWR=20:1 All Parameters, Conditions, Ratings and Limits are subject to change without notice Publication Date : Oct．2011 2 MIN TYP MAX UNIT 400 - 450 MHz 45 - - W 35 - - % - - -25 dBc - - 3:1 — - 1 - mA No parasitic oscillation — No degradation or destroy — < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) 2nd, 3rd HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 80 50 50 T 40 30 30 VDD=12.5V VGG=5V Pin=50mW 20 in 20 10 0 0 390 400 410 420 430 440 450 460 FREQUENCY f(MHz) -30 -40 -50 40 16 30 12 IDD 20 8 f=400MHz, VDD=12.5V, VGG=5V 10 4 0 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 20 Gp 0 -15 -10 -5 0 5 10 15 410 420 430 440 FREQUENCY f(MHz) 450 460 60 DRAIN CURRENT I DD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 400 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 Pout nd 3rd -70 390 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 60 2 -60 24 Pout 50 20 Gp 40 16 30 12 20 8 IDD f=430MHz, VDD=12.5V, VGG=5V 10 0 20 -15 -10 INPUT POWER Pin(dBm) -5 0 5 10 15 4 DRAIN CURRENT IDD(A) 60 HARMONICS (dBc) 60 10 VDD=12.5V VGG=5V Pin=50mW 70 Pout 40 -20 TOTAL EFFICIENCY T(%) 70 INPUT VSWR in (-) OUTPUT POWER P out(W) 80 0 20 INPUT POWER Pin(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 Pout 50 20 Gp 40 16 30 12 20 8 IDD f=450MHz, VDD=12.5V, VGG=5V 10 0 -15 -10 -5 0 5 10 15 4 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 60 0 20 INPUT POWER Pin(dBm) 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 100 90 80 70 60 50 40 30 20 10 0 16 f=430MHz, VGG=5V, Pin=50mW 3 Pout IDD 2 Publication Date : Oct．2011 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 DRAIN CURRENT IDD(A) f=400MHz, VGG=5V, Pin=50mW OUTPUT POWER P out(W) 100 90 80 70 60 50 40 30 20 10 0 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) f=450MHz, VGG=5V, Pin=50mW 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 80 60 50 14 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) OUTPUT POWER P out(W) 16 f=400MHz, VDD=12.5V, Pin=50mW 70 DRAIN CURRENT I DD(A) OUTPUT POWER P out(W) 80 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 60 8 6 20 4 10 2 0 50 14 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 0 2.5 DRAIN CURRENT I DD(A) OUTPUT POWER P out(W) 60 10 IDD 30 16 70 12 40 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE f=450MHz, VDD=12.5V, Pin=50mW 14 Pout 50 5.5 80 16 f=430MHz, VDD=12.5V, Pin=50mW 70 5.5 Publication Date : Oct．2011 4 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 DRAIN CURRENT I DD(A) 100 90 80 70 60 50 40 30 20 10 0 DRAIN CURRENT I DD(A) OUTPUT POWER P out(W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO OUTLINE DRAWING (mm) 66.0 ±0.5 5 4 3 2 2.0 ±0.5 14.0 ±1 2-R2 ±0.5 1 17.0 ±0.5 51.5 ±0.5 4.0 ±0.3 7.25 ±0.8 9.5 ±0.5 60.0 ±0.5 21.0 ±0.5 3.0 ±0.3 Ø0.45 ±0.15 10.5 ±1 22.5 ±1 49.5 ±1 2.3 ±0.3 (50.4) (9.88) 7.5 ±0.5 0.09 ±0.02 3.1 +0.6/-0.4 54.0 ±1 Publication Date : Oct．2011 5 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM DUT Spectrum Analyzer 4 Power Meter Attenuator 2 3 C2 + DC Power Supply VDD 1 ZG=50 ZL=50 Directional Coupler Power Meter 5 Directional Coupler Attenuator Preamplifier Attenuator Signal Generator C1 + DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 1 4 5 Publication Date : Oct．2011 6 < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene) d) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 4.0 to 6.0 kgf-cm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) VDD IDD @ T=35% Stage (W) (W) (°C/W) (V) (A) st 1 0.05 2.0 23.0 0.24 nd 12.5 2 2.0 12.0 2.4 2.80 rd 3 12.0 45.0 1.2 6.80 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.24A – 2.0W + 0.05W) x 23.0°C/W = Tcase + 24.2 °C Tch2 = Tcase + (12.5V x 2.80A - 12.0W + 2.0W) x 2.4°C/W = Tcase + 60.0 °C Tch3 = Tcase + (12.5V x 6.80A - 45.0W + 12.0W) x 1.2°C/W = Tcase + 62.4 °C For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=45W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 54.2 °C Tch2 = Tair + 90.0 °C Tch3 = Tair + 92.4 °C 175°C maximum rating for the channel temperature ensures application under derated conditions. Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=4V the output power and Drain current increases strongly. Around VGG=4.5V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Publication Date : Oct．2011 7 < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50 ? c) Is the source impedance ZG=50 ? ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 8 < Silicon RF Power Modules > RA45H4045MR RoHS Compliance, 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 9