<Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) • Pout>60W, T>45% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 136-174MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 67 x 19.4 x 9.9 mm RoHS COMPLIANCE • RA60H1317M1A-201 is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However ,it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA60H1317M1A-201 SUPPLY FORM Antistatic tray, 10 modules/tray Publication Date :Apr.2011 1 BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (FIN) PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 5.5 V Pin Input Power 100 mW 80 W -30 to +100 °C -40 to +110 °C f=136-174MHz, Pout Output Power ZG=ZL=50 Tcase(OP) Operation Case Temperature Range Tstg Storage Temperature Range The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER MIN TYP MAX UNIT Frequency Range 136 - 174 MHz Pout Output Power 60 - - W T Total Efficiency 45 - - % f 2fo CONDITIONS VDD=12.5V nd VGG=5V - - -50 dBc rd Pin=50mW - - -50 dBc 2 Harmonic 3fo 3 Harmonic in Input VSWR - - 3:1 — IGG Gate Current - 1 - mA — Stability — Load VSWR Tolerance VDD=10.0-15.2V, Pin=25-70mW, No parasitic oscillation Pout<70W (VGG control), Load VSWR=3:1 More than –60dBc VDD=15.2V, Pin=50mW, Pout=60W (VGG control), No degradation or Load VSWR=20:1 destroy All parameters, conditions, ratings, and limits are subject to change without notice. Publication Date :Apr.2011 2 — — < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) 2nd, 3rd HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 90 90 -25 80 80 -30 Pout 70 70 60 60 ηT 50 40 40 30 ρin 10 0 130 30 V DD=12.5V V GG=5V Pin=50mW 20 140 150 160 -35 -40 -45 2nd -50 -55 20 -60 10 -65 0 180 170 V DD=12.5V V GG=5V Pin=50mW 3rd -70 130 140 Frequency f (MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 20 40 16 35 14 30 12 25 10 30 12 25 10 20 8 6 f=136MHz V DD=12.5V V GG=5V 10 5 0 5 10 15 2 5 0 0 -10 20 18 Gp 40 16 35 14 30 12 25 10 8 I DD 5 0 -10 6 f=174MHz V DD=12.5V V GG=5V 10 Drain Current IDD (A) Output Power Pout (dBm) Power Gain Gp (dB) 20 Pout 15 4 2 0 -5 0 5 10 8 15 20 Input Pow er Pin (dBm) Publication Date :Apr.2011 3 6 f=155MHz V DD=12.5V V GG=5V 4 2 0 -5 0 5 10 Input Pow er Pin (dBm) 50 18 I DD 15 10 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 20 20 4 Input Pow er Pin (dBm) 45 Pout 45 14 IDD 20 Gp 16 35 -5 180 50 Output Power Pout (dBm) Power Gain Gp (dB) Output Power Pout (dBm) Power Gain Gp (dB) Gp 0 -10 170 18 Drain Current IDD (A) Pout 45 15 160 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 40 150 Frequency f (MHz) 15 20 Drain Currrent IDD (A) 50 Harmonics (dBc) -20 Total Efficiency ηT (%) 100 Output Power Pout (W) Input VSWR ρｉｎ (-) 100 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE Pout 70 100 18 90 16 80 14 60 12 50 10 I DD 40 8 18 16 70 14 Pout 60 12 50 10 I DD 40 8 30 6 30 6 20 4 20 4 10 2 10 2 0 0 0 2 4 6 8 10 12 14 100 20 f=174MHz V GG=5V Pin=50mW 18 16 70 14 Pout 60 12 50 10 I DD 40 8 30 6 20 4 10 2 0 Drain Current IDD (A) 80 0 2 4 6 8 10 4 6 8 10 Drain Voltage V DD (V) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 90 0 2 Drain Voltage V DD (V) Output Power Pout (W) 20 f=155MHz V GG=5V Pin=50mW 12 14 Drain Voltage V DD (V) Publication Date :Apr.2011 4 12 14 Drain Current IDD (A) Output Power Pout (W) 80 20 Output Power Pout (W) f=136MHz V GG=5V Pin=50mW 90 Drain Current IDD (A) 100 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE Pout 20 100 18 90 16 80 70 14 60 12 50 10 I DD 18 16 Pout 70 14 60 12 50 10 I DD 40 8 30 6 30 6 20 4 20 4 10 2 10 2 0 2.0 0 2.5 3.0 3.5 4.0 4.5 5.0 100 18 16 Pout 70 14 60 12 50 10 I DD 40 8 30 6 20 4 10 2 0 2.0 Drain Current IDD (A) 80 20 f=174MHz V DD=12.5V Pin=50mW 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Gate Voltage V GG (V) Publication Date :Apr.2011 5 8 0 2.5 3.0 3.5 4.0 Gate Voltage V GG (V) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 90 40 0 2.0 5.5 Gate Voltage V GG (V) Output Power Pout (W) 20 f=155MHz V DD=12.5V Pin=50mW 4.5 5.0 5.5 Drain Current IDD (A) Output Power Pout (W) 80 f=136MHz V DD=12.5V Pin=50mW Output Power Pout (W) 90 Drain Current IDD (A) 100 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO OUTLINE DRAWING (mm) 67±1 ④ 18±1 10.7±1 ③ 15±1 ① ② 4±0.5 49.8±1 2-R2±0.5 19.4±1 (3.26) 60±1 12.5±1 0.6±0.2 17±1 44±1 （2.6） （9.9） 3.1+0.6/-0.4 7.3±0.5 56±1 1 INPUT TERMINAL (Pin ) 2 GATE BIAS DC SUPPLY TERMINAL (VGG) 3 DRAIN BIAS DC SUPPLY TERMINAL (VDD) 4 OUTPUT TERMINAL (Pout) 5 Fin (GND) Publication Date :Apr.2011 6 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM DUT Power Meter 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 2 3 ZG=50 C1 5 Spectrum Analyzer 4 ZL=50 Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD C1, C2: 4700pF, 22uF in parallel 1 INPUT TERMINAL (Pin ) 2 GATE BIAS DC SUPPLY TERMINAL (VGG) 3 DRAIN BIAS DC SUPPLY TERMINAL (VDD) 4 OUTPUT TERMINAL (Pout) 5 Fin (GND) EQUIVALENT CIRCUIT ③ ② ④ ⑤ ① Publication Date :Apr.2011 7 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T=45% VDD (W) (W) (°C/W) (A) (V) st 0.05 5.0 2.1 0.8 nd 5.0 60.0 0.5 9.8 Stage 1 2 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.8A - 5.0W + 0.05W) x 2.1°C/W = Tcase + 10.6 °C Tch2 = Tcase + (12.5V x 9.8A - 60W + 5.0W) x 0.5°C/W = Tcase + 33.8 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (60W/45% – 60W + 0.05W) = 0.41 °C/W When mounting the module with the thermal resistance of 0.41 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 40.6 °C Tch2 = Tair + 63.8 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. Publication Date :Apr.2011 8 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO Output Power Control: By the gate voltage (VGG). Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? ATTENTION: 1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3.RA series products and RD series Products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions. 5.RA series products are designed to operate into a nominal load impedance of 50. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date :Apr.2011 9 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date :Apr.2011 10