DAESAN SBP10100

CURRENT 10.0Amperes
VOLTAGE 20 to 100 Volts
SBP1020 THRU SBP10100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
ITO-220
2.54
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
0.7
2.54
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
4.5 0.2
15 0.3
2.7 0.2
13Min
2.7 0.2
1.3 0.2
3.7 0. 2
Mechanical Data
0.2
0.1
3.2
6.4 0.1
10 0.5
0.2
0.5
2.4
0.2
0.2
0.2
PIN 1
+
CASE
PIN 2
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SBP
1020
SBP
1030
SBP
1040
SBP
1050
SBP
1060
SBP
1080
SBP
10100
Units
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
80
100
Volts
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70
Volts
Maximum DC blocking voltage
VDC
20
30
40
50
60
80
100
Volts
Maximum average forward rectified current
(see Fig. 1)
I(AV)
10.0
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
20.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 5.0A (Note 1)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
IR
TA=25℃
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
0.75
0.80
0.85
Volts
1.0
TA=100℃
Typical thermal resistance (Note 2)
0.65
50
RθJC
TJ
TSTG
25
℃/W
5.0
-65 to +125
-65 to +150
-65 to +150
mA
℃
℃
RATINGS AND CHARACTERISTIC CURVES SBP1020 THRU SBP10100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG.1-FORWARD CURRENT DERATING CURVE
150
4.0
3.0
2.0
── SBP1020-SBP1040
- - - SBP1050-SBP10100
1.0
0
0
20
40
60
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
125
RESISTIVE OR INDUCTIVE LOAD
0.375"(9.5MM) LEAD LENGTH
80
100
120
150
PEAK FORWARD SURGE
CURRENT (AMPERES)
AVERAGE FORWARD CURRENT
AMPERES
5.0
100
75
50
25
0
1
10
100
LEAD TEMPERATURE (℃)
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=150℃
TJ=125℃
TJ=125℃
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
INSTANTANEOUS FORWARD CURRENT (AMPERES)
50
㎲
PULSE WIDTH=300
1% DUTY CYCLE
1
TJ=25℃
0.1
── SBP1020-SBP1040
- - - SBP1050-SBP10100
1
TJ=75℃
0.1
0.01
TJ=25℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
── SBP1020-SBP1040
- - - SBP1050-SBP10100
0.001
0
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
1000
── SBP1020-SBP1040
- - - SBP1050-SBP10100
100
0.1
1
10
REVERSE VOLTAGE. VOLTS
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE (pF)
4000
10
1
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100