DAESAN SBP1560

CURRENT 15.0Amperes
VOLTAGE 35 to 60 Volts
SBP1535 THRU SBP1560
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
ITO-220
2.54
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
0.7
2.54
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
4.5 0.2
2.7 0.2
15 0.3
13Min
2.7 0.2
1.3 0.2
3.7 0. 2
Mechanical Data
0.2
0.1
3.2
6.4 0.1
10 0.5
0.2
0.5
2.4
0.2
0.2
0.2
PIN 1
+
CASE
PIN 2
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SBP1535
SBP1545
SBP1550
SBP1560
Units
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum RMS voltage
VRMS
25
32
35
42
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current
at Tc=105℃ per diode/per device
I(AV)
7.5
15.0
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃ per diode
IFRM
15.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 7.5A (Note 1)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
IR
0.65
TA=25℃
TA=125℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
0.75
Volts
1.0
RθJC
15
50
2.5
mA
℃/W
TJ
-65 to +150
℃
TSTG
-65 to +175
℃
RATINGS AND CHARACTERISTIC CURVES SBP1535 THRU SBP1560
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
25
RESISTIVE OR INDUCTIVE LOAD
15
10
5
125
100
75
50
0
0
50
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
150
20
PEAK FORWARD SURGE
CURRENT (AMPERES)
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
100
25
150
1
10
LEAD TEMPERATURE (℃)
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
50
── SBP1535-SBP1545
- - - SBP1550-SBP1560
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
10
INSTANTANEOUS FORWARD CURRENT (AMPERES)
100
10
TJ=125℃
㎲
PULSE WIDTH=300
1% DUTY CYCLE
TJ=25℃
1
0.1
── SBP1535-SBP1545
- - - SBP1550-SBP1560
0.01
0
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
TJ=125℃
1
0.1
TJ=75℃
0.01
TJ=25℃
1.2
0.001
0
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE (pF)
4000
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
1000
── SBP1535-SBP1545
- - - SBP1550-SBP1560
100
40
10
1
0.1
0.01
0.1
1
10
REVERSE VOLTAGE. VOLTS
100
0.1
1
T, PULSE DURATION, sec.
10
100