SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver POWER MANAGEMENT Description Features +4.5V to +16.5V operation Fast rise and fall times (20ns typical with 1000pf load) Dual MOSFET driver 2A peak drive current 40ns propagation delay 8-pin SOIC / MSOP packages Enable/disable control TTL-compatible input Under voltage lockout with hysteresis Low shutdown supply current Over temperature protection ESD protection Dual inverting/non-inverting and inverting/non-inverting configurations The SC1302A/B/C/D/E/F family are low cost dual lowside MOSFET drivers. These drivers accept TTL-compatible inputs and are capable of supplying high current outputs (> 2A peak) to external MOSFETs. Fast switching allows operation up to 1 MHz. The SC1302A/B/C is available in six configurations: SC1302A is a dual noninverting, SC1302B is a dual inverting and SC1302C is a one inverting plus one non-inverting output. The SC1302D/E/F is the derivative part from SC1302A/ B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to VCC. An under-voltage lockout circuit guarantees that the driver outputs are low when Vcc is less than 4.5V (typ). An internal temperature sensor shuts down the driver in the event of over temperature. Applications Switch-mode power supplies Battery powered applications Solenoid and motor drives Typical Application Circuit V lo a d +12V 10uF 0 .1 u F Load A In p u tA 2 S C1302A 6 VCC IN A O U TA 1 8 Load B 7 EN S H D N O U TB 5 In p u tB 4 IN B GND 3 Revision: April 27, 2005 1 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Absolute Maximum Ratings PRELIMINARY Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability. Parameter Symbol Typ Units Supply Voltage V CC -0.3 to 20 V Operating Supply Voltage VCC -0.3 to 16.5 V Input Voltages VINA, VINB -0.3 to VCC V Peak Output Currents IOUTA, IOUTB 3 A V EN -0.3 to VCC V VSHDN -0.3 to VCC V Continuous Power Dissipation Pd Internally limited W Operating Temperature Range TA -40 to +125 °C Thermal Resistance Junction to Ambient (MSOP) θJ A 206 °C/W Thermal Resistance Junction to Ambient (SOIC) θJ A 165 °C/W Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Soldering)10 sec TLEAD 260 °C ESD Rating (Human Body Model) ESD 2 kV Enable Voltage (SC1302A/B/C) Shutdown Voltage (SC1302A/B/C) DC Electrical Characteristics Unless otherwise specified: -40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C). Parameter Symbol Conditions Quiescent Current IQ Quiescent Current Quiescent Current Min Typ Max Units VCC < VSTART 1 1.8 mA IQ VEN = VSHDN = 3V for SC1302A/B/C, VINA = VINB = 3V 5.7 8.1 mA IQ VSHDN = 0V for SC1302A/B/C 3 8 µA VSTART VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V 4.2 4.5 4.7 V VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V 250 320 475 mV 2.0 Supply Current Under-Voltage Lockout Threshold Voltage Hysteresis Enable for SC1302A/B/C Enable Voltage V EN 0 < V EN < V C C Disable Voltage V EN 0 < V EN < V C C 2005 Semtech Corp. 2 V 0.8 V www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT DC Electrical Characteristics (Cont.) Unless otherwise specified: -40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C). Parameter Symbol Conditions Min Typ Max Units Enable for SC1302A/B/C (Cont.) Delay to Output (1) tD_EN EN for low to high 70 ns Delay to Output (1) tD_DIS EN from high to low 55 ns IEN 0 < VIN < VCC 10 High Level Input Voltage VIH 0 < VIN < VCC 2.0 Low Level Input Voltage VIL 0 < VIN < VCC Input Current IIN 0 < VIN < VCC Non-Inverting Input(s) of SC1302A/C/D/F Enable Input Current 14 19 µA Input 0 < VIN < VCC Inverting Input(s) of SC1302B/C/E/F V 13 0.8 V 18.5 µA -8 µA (2) Output Output Peak Current IPK_SOURCE VOUT = 0.5V, tPW < 10uS 1600 mA IPK_SINK VOUT = VCC - 0.5V, tPW < 10uS 1600 mA Shutdow n SC1302A/B/C (Cont.) SHDN Input Voltage High VSHDN SHDN Input Voltage Low VSHDN SHDN Pin Current ISHDN 2 VSHDN = 5V V 32 0.3 V 40 µA Thermal Shutdow n Over Temperature Trip Point(1) TJ_OT Hysteresis(1) 150 °C 10 °C AC Electrical Characteristics Unless otherwise specified: TA = 25°C, VCC = 12V, VEN = 5V, CL = 1000pF Parameter Symbol Conditions Min Typ Max Units Rise time(1) tR See Timing Diagram 20 ns Fall time(1) tF See Timing Diagram 20 ns Propagation delay time(1) tD1 See Timing Diagram 53 ns Propagation delay time(1) tD2 See Timing Diagram 41 ns Notes: (1) Guaranteed by design not tested in production. (2) Negative sign indicates that the input current flows out of the device. 2005 Semtech Corp. 3 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Timing Diagram PRELIMINARY 5V Inpu t 0V 90 % 10 % tR tF 90 % N on -in ve rting Ou tp u t SC1302A 90 % 10 % Inve rtin g Ou tp u t SC1302B 10 % tF tR 90 % 90 % 10 % 10 % tD 1 tD2 Pin Descriptions Pin # SC1302A/D SC1302B/E SC1302C/F Pin Function Enable/disable control. When the EN is driven low, both outputs are low. When left open, both outputs are low. Enable both drivers by tying EN pin to a voltage greater than 2V. No connection on versions D, E and F. 1 EN/NC EN/NC EN/NC 2 INA INA INA TTL-compatible input to the driver A. When left open, Pin 7 is low. 3 GND GND GND Ground. 4 INB INB INB TTL-compatible input to the driver B. When left open, Pin 5 is low. 5 OUTB OUTB OUTB Output gate drive B for external MOSFET. 6 VCC VCC VCC Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held low. 7 OUTA OUTA OUTA Output gate drive A for external MOSFET. 8 SHDN/NC SHDN/NC SHDN/NC 2005 Semtech Corp. Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull below 0.3V for low-power shut down. No connection on versions D, E and F. 4 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Pin Configuration Ordering Information Part Number (2) Top View SC1302A/D (Dual Non-Inverting) EN/NC 1 8 SHDN/NC INA 2 7 OUTA GND 3 6 VCC INB 4 5 OUTB P ackag e (1) Temp. Range (TA) SC1302AISTRT SC1302BISTRT SC1302CISTRT SC1302DSTRT SOIC-8 -40°C to +125°C MSOP-8 -40°C to +125°C SC1302ESTRT SC1302FSTRT (8-Pin SOIC (A/D) or MSOP (A only) SC1302AIMSTRT SC1302BIMSTRT SC1302CIMSTRT Top View SC1302B/E (Dual Inverting) EN/NC 1 8 SHDN/NC INA 2 7 OUTA GND 3 6 VCC INB 4 5 OUTB Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product.This product is fully WEEE and RoHS compliant. (8-Pin SOIC (B/E) or MSOP (B only) Top View SC1302C/F (Inverting + Non-Inverting) EN/NC 1 8 SHDN/NC INA 2 7 OUTA GND 3 6 VCC INB 4 5 OUTB (8-Pin SOIC (C/F) or MSOP (C only) 2005 Semtech Corp. 5 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Block Diagrams PRELIMINARY EN EN VCC PREDRIVER OUTA INA PREDRIVER OUTA PREDRIVER OUTB BIAS BIAS INA VCC BANDGAP BANDGAP SHDN BIAS BIAS SHDN PREDRIVER INB SC1302A EN INB SC1302B GND GND VCC PREDRIVER OUTA PREDRIVER OUTB BIAS INA OUTB BANDGAP BIAS SHDN INB SC1302C SC1302D GND SC1302E 2005 Semtech Corp. SC1302F 6 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Typical Characteristics Rise and Fall Time vs. Supply Volta ge Rise and Fall Time vs. Capa citive Loa d 80 25 V C C = 12V f= 200K H z T A = 25°C C L = 1000pF T A = 25°C 20 Time (ns) Time (ns) 60 tf tr 15 tf 40 tr 20 10 0 4 8 12 100 16 10000 Capacitive Load (pF) Supply Voltage (V) Supply Current vs. Capacitive Loa d Input Pin Current 40 15 V C C = 12V O ne D riverR unning T A = 25°C 30 N on-inverting 10 Iin (uA) Supply Currnt (mA) 1000 20 5 Inverting 0 200K H z 10 -5 100K H z -10 0 100 1000 0 10000 8 12 Vin (V) Capacitive Load (pF) 2005 Semtech Corp. 4 7 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Applications Information PRELIMINARY For simplicity, we assume that the gate capacitance of a MOSFET is constant. The power delivered from the power supply can be estimated based on this simplification. The energy needed to charge the capacitor is given by: The SC1302A/B/C/D/E/F is a high speed, high peak current dual MOSFET driver. It is designed to drive power MOSFETs with ultra-low rise/fall time and propagation delays. As the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While discrete solution can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1032A/B/C/ D/E/F presents a total solution for the high-speed, high power density applications. Wide input supply range of 4.5V - 16.5V allows use in battery powered applications as well as distributed power systems. 1 ⋅ C ⋅ V2 2 where C is the load capacitance and V is the output voltage swing of the driver. E ON = During turn off, the same amount of energy is dumped to the ground. Therefore, the energy dissipated in one switching cycle is: E TOTAL = C ⋅ V 2 The power dissipation due to the gate driving actions is given by: Supply Bypass and Layout PGATE = f ⋅ C ⋅ V 2 A 4.7µF to 10µF tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1µF ceramic capacitor in parallel are recommended as supply bypass to control switching and supply transients. where, f is the switching frequency. with V CC= 12V, C = 1nF and f = 200kHz, the power dissipation per output is: As with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1302A/B/C/D/E/F. Attention should be paid to the proper placement of the driver, the switching MOSFET and the bypass capacitors. PGATE = (200 kHz ) ⋅ (1 nF) ⋅ (12) = 29mW 2 The corresponding supply current is: I= The driver should be placed as close as possible to the external MOSFETs to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. A resistor in the range of 10W could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should also be placed closely between Vcc and GND of the driver. A Schottky diode may be used to connect the ground and the output pin to avoid latchups in some applications. Thermal Information The driver’s junction temperature must be kept within the rated limit at any time. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150oC, the internal protection circuit will be triggered to shut down the gate driver. Drive Capability and Power Dissipation The power dissipation of the SC1302A/B/C/D/E/F should be derated according to the following formula: The SC1302A/B/C/D/E/F is able to deliver 1.6A peak current for driving capacitive loads, such as MOSFETs. Power Dissipatio n < Fast switching of the MOSFETs significantly reduces switching losses for high frequency applications. Thermal stress is reduced and system reliability is improved. 2005 Semtech Corp. PGATE 29mW = = 2.4mA VCC 12V 125°C − TA θjA where T = ambient temperature. A 8 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Outline Drawing - MSOP-8 DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX e/2 A A A1 A2 b c D E1 E e L L1 N 01 aaa bbb ccc D N 2X E/2 E1 PIN 1 INDICATOR ccc C 2X N/2 TIPS E 1 2 e B aaa C SEATING PLANE D 1.10 0.00 0.15 0.75 0.95 0.22 0.38 0.08 0.23 2.90 3.00 3.10 2.90 3.00 3.10 4.90 BSC 0.65 BSC 0.40 0.60 0.80 (.95) 8 0° 8° 0.10 0.13 0.25 H A2 C .043 .000 .006 .030 .037 .015 .009 .003 .009 .114 .118 .122 .114 .118 .122 .193 BSC .026 BSC .016 .024 .032 (.037) 8 0° 8° .004 .005 .010 A c GAGE PLANE A1 bxN bbb C A-B D 0.25 L (L1) DETAIL SEE DETAIL SIDE VIEW 01 A A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-187, VARIATION AA. Land Pattern - MSOP-8 X DIM (C) G C G P X Y Z Z Y DIMENSIONS INCHES MILLIMETERS (.161) .098 .026 .016 .063 .224 (4.10) 2.50 0.65 0.40 1.60 5.70 P NOTES: 1. 2005 Semtech Corp. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 9 www.semtech.com SC1302A/B/C/D/E/F POWER MANAGEMENT Outline Drawing - SO-8 PRELIMINARY A D e N DIM A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc 2X E/2 E1 E 1 2 ccc C 2X N/2 TIPS e/2 B D DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .069 .053 .004 .010 .049 .065 .012 .020 .007 .010 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 0° 8° .004 .010 .008 aaa C SEATING PLANE h A2 A C A1 bxN bbb 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0° 8° 0.10 0.25 0.20 h H C A-B D c GAGE PLANE 0.25 SEE DETAIL A L (L1) DETAIL SIDE VIEW 01 A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIM (C) G Z Y C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2005 Semtech Corp. 10 www.semtech.com