SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK® 4 Thyristor Modules SKET 330 Features ! "# $#% Typical Applications &' ) * ) + * ) * 1) , 2) -.,/ -../ -&./ :22 5#22 5$22 5822 5:22 %522 622 5%22 5=22 5"22 5622 %222 0./, 1 "22 3 )4 + * 03- 1 ##2 3 ) 5627 1 86 9'* ,;! ##2<26! ,;! ##2<5%! ,;! ##2<5=! ,;! ##2<5"! ,;! ##2<56! ,;! ##2<%2! %#22 %%22 ,;! ##2<%%! Symbol Conditions Values Units 030& 5627 1 6$ )522* 9'7 5"<#22>7 1 #$ 9'7 ?% < ?" %:$ )%52 * $#2 < ""$ 3 3 0./, 5"<=22>7 1 #$ 9'7 @5 < @# "6$ < # A $$2 3 0,/ +B 1 %$ 9'7 52 +B 1 5#2 9'7 52 +B 1 %$ 9'7 6# 52 :222 6222 =2$222 3 3 3C C #%2222 3C - -)D* +B 1 5#2 9'7 6# +B 1 %$ 9'7 0 1 5$22 3 +B 1 5#2 9' +B 1 5#2 9' 52 4 %2$ 4 5% 4 2$$ E 0&&7 0.& +B 1 5#2 9'7 -.& 1 -../7 -&& 1 -&./ 4 %22 3 +B 1 %$ 9'7 0F 1 5 37 F< 1 5 3<G 5 G -& 1 2"8 A -&./ % G )<* )+<* H 0 +B 1 5#2 9' +B 1 5#2 9' +B 1 5#2 9' +B 1 %$ 9'7 < 4 4 5%$ 4 5222 5$2 %22 5$2 < $22 3<G -<G G 3 0 +B 1 %$ 9'7 .F 1 ## E7 < 4 $22 < %222 3 -F 0F -F& +B 1 %$ 9'7 +B 1 %$ 9'7 +B 1 5#2 9'7 # %22 4 2%$ 3 - 0F& +B 1 5#2 9'7 4 52 3 .)BI* .)BI* .)BI* .)I* +B 562 5%2 22: 22:$ 255 22% I =2 J 5#2 ;<@ ;<@ ;<@ ;<@ 9' I =2 - / / $2 7 7 5 < 5 L 4 ' J 5#2 9' #"22 < #222 $ M 5$ N5* 58 M 5$ N%* $ A :65 -K O O <C :=2 3 #" SKET 1 16-02-2009 MAY © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time. Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 2 16-02-2009 MAY © by SEMIKRON SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 9 Gate trigger characteristics Dimensions in mm ' 3 #" This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 16-02-2009 MAY © by SEMIKRON