SSM6N55NU
MOSFETs
Silicon N-Channel MOS
SSM6N55NU
1. Applications
•
Power Management Switches
•
DC-DC Converters
2. Features
(1)
4.5V gate drive voltage.
(2)
Low drain-source on-resistance
: RDS(ON) = 46 mΩ (max) (@VGS = 10 V)
RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V)
3. Packaging and Pin Configuration
1. Source1
2. Gate1
3. Drain2
4. Source2
5. Gate2
6. Drain1
UDFN6
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)
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
25
(Q1,Q2 Common)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
30
Gate-source voltage
VGSS
±20
(Note 1)
ID
4.0
(Note 1), (Note 2)
IDP
10
(Note 3)
PD
1
W
(Note 3)
PD
2
W
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
t ≤ 10 s
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (total dissipation)
(with a dissipating copper surface of 25.4 mm × 25.4 mm)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
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5. Electrical Characteristics
unless otherwise specified)(Q1,Q2 Common)
5.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Test Condition
Min
Typ.
Max
Unit
±10
µA
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 30 V, VGS = 0 V
1
V(BR)DSS ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
(Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V
10
Gate threshold voltage
(Note 2)
1.3
2.5
Drain-source on-resistance
(Note 3)
RDS(ON) ID = 4.0 A, VGS = 10 V
33
46
ID = 2.0 A, VGS = 4.5 V
48
64
VDS = 10 V, ID = 1.0 A
3.4
6.8
Forward transfer admittance
(Note 3)
Vth
|Yfs|
VDS = 10 V, ID = 0.1 mA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
unless otherwise specified)(Q1,Q2 Common)
25
5.2. Dynamic Characteristics (Ta = 25
Characteristics
Symbol
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time (turn-on time)
ton
Switching time (turn-off time)
toff
Test Condition
VDS = 15 V, VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 0.5 A
VGS = 0 to 4.5 V, RG = 10 Ω,
Duty ≤ 1%, Input: tr, tf < 5 ns
Ground source, See Chapter 5.3
Min
Typ.
Max
Unit
280
pF
20
53
15
12
ns
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
unless otherwise specified)
25
5.4. Gate Charge Characteristics (Ta = 25
(Q1,Q2 Common)
Characteristics
Total gate charge (gate-source plus gate-drain)
Symbol
Qg
Gate-source charge 1
Qgs1
Gate-drain charge
Qgd
Test Condition
VDD = 15 V, VGS = 4.5 V,
ID = 4.0 A
3
Min
Typ.
Max
Unit
2.5
nC
1.6
0.5
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unless otherwise specified)
5.5. Source-Drain Characteristics (Ta = 25
25
(Q1,Q2 Common)
Characteristics
Diode forward voltage
Symbol
(Note 1)
VDSF
Test Condition
ID = -4.0 A, VGS = 0 V
Min
Typ.
Max
Unit
-0.85
-1.2
V
Note 1: Pulse measurement.
6. Marking
Fig. 6.1 Marking
Fig. 6.2 Pin Condition(Top View)
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7. Characteristics Curves (Note)
Fig. 7.1 ID - VDS
Fig. 7.2 ID - VGS
Fig. 7.3 RDS(ON) - VGS
Fig. 7.4 RDS(ON) - VGS
Fig. 7.5 RDS(ON) - ID
Fig. 7.6 RDS(ON) - Ta
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Fig. 7.7 Vth - Ta
Fig. 7.8 |Yfs| - ID
Fig. 7.9 IDR - VDS
Fig. 7.10 C - VDS
Fig. 7.11 t - ID
Fig. 7.12 Dynamic Input/Output Characteristics
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Fig. 7.13 rth - tw
Fig. 7.14 PD - Ta
Fig. 7.15 Safe Operating Area
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test.
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Package Dimensions
Unit: mm
Weight: 8.5 mg (typ.)
Package Name(s)
TOSHIBA: 2-2Y1A
Nickname: UDFN6
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