SST SST25WF040-40-5I-SAF

512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 40MHz
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Ultra-Low Power Consumption:
– Active Read Current: 2 mA (typical @ 20MHz)
– Standby Current: 2 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
(2 Mbit and 4 Mbit only)
• Fast Erase and Byte-Program:
– Chip-Erase Time: 125 ms (typical)
– Sector-/Block-Erase Time: 62ms (typical)
– Byte-Program Time: 50 µS (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Reset Pin (RST#) or Programmable Hold Pin
(HOLD#) option
– Hardware Reset pin as default
– Hold pin option to suspend a serial sequence
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (150 mils)
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST25WF512, SST25WF010, SST25WF020, and
SST25WF040 are members of the Serial Flash 25 Series
family and feature a four-wire, SPI-compatible interface that
allows for a low pin-count package which occupies less
board space and ultimately lowers total system costs.
SST25WF512/010/020/040 SPI serial flash memories are
manufactured with SST proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
single power supply of 1.65-1.95V for SST25WF512/010/
020/040. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.
The SST25WF512/010/020/040 devices are offered in
both 8-lead SOIC and an 8-contact WSON packages. See
Figure 2 for the pin assignment.
The SST25WF512/010/020/040 devices significantly
improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a
©2009 Silicon Storage Technology, Inc.
S71328-08-000
11/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
X - Decoder
Address
Buffers
and
Latches
SuperFlash
Memory
Y - Decoder
I/O Buffers
and
Data Latches
Control Logic
Serial Interface
CE#
SCK
SI
SO
WP#
RST#/HOLD#
1328 F01.0
Note: In AAI mode, the SO pin functions as an RY/BY# pin when configured as a ready/busy
status pin. See “End-of-Write Detection” on page 14 for more information.
FIGURE 1: Functional Block Diagram
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
PIN DESCRIPTION
Top View
CE#
1
8
VDD
SO
2
7
RST#/HOLD#
WP#
3
6
SCK
VSS
4
5
SI
CE#
1
SO
2
8
VDD
7
RST#/HOLD#
Top View
WP#
3
6
SCK
VSS
4
5
SI
1328 08-wson P2.0
1328.25WF 08-soic-P0.0
8-Contact WSON
8-Lead SOIC
FIGURE 2: Pin Assignment for 8-Lead SOIC and 8-Contact WSON
TABLE 1: Pin Description
Symbol
Pin Name
Functions
SCK
Serial Clock
To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the clock input,
while output data is shifted out on the falling edge of the clock input.
SI
Serial Data Input
To transfer commands, addresses, or data serially into the device.
Inputs are latched on the rising edge of the serial clock.
SO
Serial Data Output
To transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock.
Flash busy status pin in AAI mode if SO is configured as a hardware RY/BY# pin. See
“End-of-Write Detection” on page 14 for more information.
CE#
Chip Enable
The device is enabled by a high to low transition on CE#. CE# must remain low for the
duration of any command sequence.
WP#
Write Protect
The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register.
Reset
To reset the operation of the device and the internal logic. The device powers on with
RST# pin functionality as default.
RST#/HOLD#
Hold
To temporarily stop serial communication with SPI Flash memory while device is
selected. This is selected by an instruction sequence which is detailed in “Reset/Hold
Mode” on page 5.
VDD
Power Supply
To provide power supply voltage: 1.65-1.95V for SST25WF512/010/020/040
VSS
Ground
T1.0 1328
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
MEMORY ORGANIZATION
(CE#) is used to select the device, and data is accessed
through the Serial Data Input (SI), Serial Data Output (SO),
and Serial Clock (SCK).
The SST25WF512/010/020/040 SuperFlash memory
arrays are organized in uniform 4 KByte with 16 KByte, 32
KByte, and 64 KByte (2 Mbit and 4 Mbit Only) overlay erasable blocks.
The SST25WF512/010/020/040 support both Mode 0
(0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 3, is the
state of the SCK signal when the bus master is in Stand-by
mode and no data is being transferred. The SCK signal is
low for Mode 0 and SCK signal is high for Mode 3. For both
modes, the Serial Data In (SI) is sampled at the rising edge
of the SCK clock signal and the Serial Data Output (SO) is
driven after the falling edge of the SCK clock signal.
DEVICE OPERATION
The SST25WF512/010/020/040 are accessed through
the SPI (Serial Peripheral Interface) bus compatible protocol. The SPI bus consist of four control lines; Chip Enable
CE#
SCK
SI
MODE 3
MODE 3
MODE 0
MODE 0
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
SO
HIGH IMPEDANCE
DON'T CARE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
1328 F03.0
FIGURE 3: SPI Protocol
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Reset/Hold Mode
mode. The RST# pin must be driven low for a minimum of
TRST time to reset the device. The SO pin is in high impedance state while the device is in reset. A successful reset will
reset the status register to its power-up state. See Table 4
for default power-up modes. A device reset during an active
Program or Erase operation aborts the operation and data
of the targeted address range may be corrupted or lost due
to the aborted erase or program operation. The device exits
AAI Programming Mode in progress and places the SO pin
in high impedance state.
The RST#/HOLD# pin provides either a hardware reset or
a hold pin. From power-on, the RST#/HOLD# pin defaults
as a hardware reset pin (RST#). The Hold mode for this pin
is a user selected option where an Enable-Hold instruction
enables the Hold mode. Once selected as a hold pin
(HOLD#), the RST#/HOLD# pin will be configured as a
HOLD# pin, and goes back to RST# pin only after a poweroff and power-on sequence.
Reset
If the RST#/HOLD# pin is used as a reset pin, RST# pin
provides a hardware method for resetting the device. Driving
the RST# pin high puts the device in normal operating
CE#
TRECR
TRECP
TRECE
SCK
TRST
RST#
TRHZ
SO
SI
1328 Fx4.0
FIGURE 4: Reset Timing Diagram
TABLE 2: Reset Timing Parameters
Symbol
Parameter
Min
TRST
Reset Pulse Width
100
Max
Units
TRHZ
Reset to High-Z Output
107
ns
TRECR
Reset Recovery from Read
100
ns
TRECP
Reset Recovery from Program
10
µs
TRECE
Reset Recovery from Erase
1
ms
ns
T2.1328
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Hold
Hold mode when the SCK next reaches the active low
state. Similarly, if the rising edge of the HOLD# signal does
not coincide with the SCK active low state, then the device
exits Hold mode when the SCK next reaches the active low
state. See Figure 5 for Hold Condition waveform.
The Hold operation enables the hold pin functionality of the
RST#/HOLD# pin. Once set to hold pin mode, the RST#/
HOLD# pin continues functioning as a hold pin until the
device is powered off and then powered on. After a poweroff and power-on, the pin functionality returns to a reset pin
(RST#) mode. See “Enable-Hold (EHLD)” on page 20 for
detailed timing of the Hold instruction.
Once the device enters Hold mode, SO will be in highimpedance state while SI and SCK can be VIL or VIH.
In the hold mode, serial sequences underway with the SPI
Flash memory are paused without resetting the clocking
sequence. To activate the HOLD# mode, CE# must be in
active low state. The HOLD# mode begins when the SCK
active low state coincides with the falling edge of the
HOLD# signal. The Hold mode ends when the rising edge
of the HOLD# signal coincides with the SCK active low
state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters
If CE# is driven active high during a Hold condition, the
device returns to standby mode. The device can then be
re-initiated with the command sequences listed in Tables 9
and 10. As long as HOLD# signal is low, the memory
remains in the Hold condition. To resume communication
with the device, HOLD# must be driven active high, and
CE# must be driven active low. See Figure 5 for Hold timing.
SCK
HOLD#
Active
Hold
Active
Hold
Active
1328 Fx5.0
FIGURE 5: Hold Condition Waveform
Write Protection
Write Protect Pin (WP#)
SST25WF512/010/020/040 provide software Write protection. The Write Protect pin (WP#) enables or disables
the lock-down function of the status register. The BlockProtection bits (BP2, BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the
status register. See Table 5 for the Block-Protection
description.
The Write Protect (WP#) pin enables the lock-down function of the BPL bit (bit 7) in the status register. When WP#
is driven low, the execution of the Write-Status-Register
(WRSR) instruction is determined by the value of the BPL
bit (see Table 3). When WP# is high, the lock-down function of the BPL bit is disabled.
TABLE 3: Conditions to execute Write-Status-Register (WRSR) Instruction
WP#
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
T3.0 1328
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Status Register
Program operation, the status register may be read only to
determine the completion of an operation in progress.
Table 4 describes the function of each bit in the software
status register.
The software status register provides status on whether the
flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of
the Memory Write protection. During an internal Erase or
TABLE 4: Software Status Register
Default at
Power-up
Read/Write
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
0
R
WEL
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
0
R
2
BP0
Indicate current level of block write protection (See Tables 5 through 8)
1
R/W
3
BP1
Indicate current level of block write protection (See Tables 5 through 8)
1
R/W
4
BP2
Indicate current level of block write protection (See Tables 5 through 8)
1
R/W
5
RES
Reserved for future use
0
N/A
6
AAI
Auto Address Increment Programming status
1 = AAI programming mode
0 = Byte-Program mode
0
R
7
BPL
1 = BP1 and BP0 are read-only bits
0 = BP1 and BP0 are read/writable
0
R/W
Bit
Name
Function
0
BUSY
1
T4.1 1328
Busy
Auto Address Increment (AAI)
The Busy bit determines whether there is an internal Erase
or Program operation in progress. A ‘1’ for the Busy bit indicates the device is busy with an operation in progress. A ‘0’
indicates the device is ready for the next valid operation.
The Auto Address Increment Programming-Status bit provides status on whether the device is in AAI programming
mode or Byte-Program mode. The default at power up is
Byte-Program mode.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal Write-Enable-Latch memory. If the WEL bit is set to ‘1’,
it indicates the device is Write enabled. If the bit is set to ‘0’
(reset), it indicates the device is not Write enabled and
does not accept any Write (Program/Erase) commands.
The Write-Enable-Latch bit is automatically reset under the
following conditions:
•
•
•
•
•
•
•
•
•
Device Reset
Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming is
completed or reached its highest unprotected
memory address
Sector-Erase instruction completion
Block-Erase instruction completion
Chip-Erase instruction completion
Write-Status-Register instructions
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Block-Protection (BP2, BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP1, BP0) bits define the size of the
memory area to be software protected against any memory Write (Program or Erase) operation, see Tables 5-7.
The Write-Status-Register (WRSR) instruction is used to
program the BP1 and BP0 bits as long as WP# is high or
the Block-Protect-Lock (BPL) bit is ‘0’. Chip-Erase can only
be executed if Block-Protection bits are all ‘0’. After powerup, BP2, BP1, and BP0 are set to defaults. See Table 4 for
defaults at power-up.
When the WP# pin is driven low (VIL), it enables the BlockProtection-Lock-Down (BPL) bit. When BPL is set to ‘1’, it
prevents any further alteration of the BPL, BP1, and BP0
bits. When the WP# pin is driven high (VIH), the BPL bit
has no effect and its value is ‘Don’t Care’. After power-up,
the BPL bit is reset to ‘0’.
TABLE 5: Software Status Register Block Protection for SST25WF512
Status Register Bit
Protection Level
BP11
BP0
Protected Memory Address
512 Kbit
None
0
0
None
1 (Upper Quarter Memory)
0
1
00C000H-00FFFFH
2 (Upper Half Memory)
1
0
008000H-00FFFFH
3 (Full Memory)
1
1
000000H-00FFFFH
T5.1 1328
1. Default at power-up for BP1 and BP0 is ‘11’.
TABLE 6: Software Status Register Block Protection for SST25WF010
Status Register Bit
Protected Memory Address
BP11
BP0
None
0
0
None
1 (Upper Quarter Memory)
0
1
018000H-01FFFFH
Protection Level
1 Mbit
2 (Upper Half Memory)
1
0
010000H-01FFFFH
3 (Full Memory)
1
1
000000H-01FFFFH
T6.0 1328
1. Default at power-up for BP1 and BP0 is ‘11’.
TABLE 7: Software Status Register Block Protection for SST25WF020
Status Register Bit
Protected Memory Address
BP11
BP0
2 Mbit
None
0
0
None
1 (Upper Quarter Memory)
0
1
030000H-03FFFFH
2 (Upper Half Memory)
1
0
020000H-03FFFFH
3 (Full Memory)
1
1
000000H-03FFFFH
Protection Level
T7.0 1328
1. Default at power-up for BP1 and BP0 is ‘11’.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
TABLE 8: Software Status Register Block Protection for SST25WF040
Status Register Bit
Protection Level
Protected Blocks
BP21
Protected Memory Address
BP1
BP0
None
None
0
0
0
4 Mbit
None
1 (Upper Eighth Memory)
Blocks 14 through 15
0
0
1
70000H-7FFFFH
2 (Upper Quarter Memory)
Blocks 12 through 15
0
1
0
60000H-7FFFFH
3 (Upper Half Memory)
Blocks 8 through 15
0
1
1
40000H-7FFFFH
4 (Full Memory)
Blocks 0 through 15
1
0
0
00000H-7FFFFH
5 (Full Memory)
Blocks 0 through 15
1
0
1
00000H-7FFFFH
6 (Full Memory)
Blocks 0 through 15
1
1
0
00000H-7FFFFH
7 (Full Memory)
Blocks 0 through 15
1
1
1
00000H-7FFFFH
T8.0 1328
1. Default at power-up for BP2, BP1, and BP0 is ‘11’.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
INSTRUCTIONS
of SCK starting with the most significant bit. CE# must be
driven low before an instruction is entered and must be
driven high after the last bit of the instruction has been
shifted in (except for Read, Read-ID, and Read-StatusRegister instructions). Any low-to-high transition on CE#,
before receiving the last bit of an instruction bus cycle, will
terminate the instruction in progress and return the device
to standby mode. Instruction commands (Op Code),
addresses, and data are all input from the most significant
bit (MSB) first.
Instructions are used to read, write (Erase and Program),
and configure the SST25WF512/010/020/040. The
instruction bus cycles are 8 bits each for commands (Op
Code), data, and addresses. The Write-Enable (WREN)
instruction must be executed prior to Byte-Program, Auto
Address Increment (AAI) programming, Sector-Erase,
Block-Erase, Write-Status-Register, or Chip-Erase instructions. The complete instructions are provided in Tables 9
and 10. All instructions are synchronized off a high-to-low
transition of CE#. Inputs will be accepted on the rising edge
TABLE 9: Device Operation Instructions for SST25WF512 and SST25WF010
Address
Cycle(s)2
Dummy
Data
Maximum
Cycle(s) Cycle(s) Frequency
Description
Op Code Cycle1
Read
Read Memory
0000 0011b (03H)
3
0
1 to ∞
High-Speed Read
Read Memory at Higher Speed 0000 1011b (0BH)
3
1
1 to ∞
4 KByte SectorErase3
Erase 4 KByte of
memory array
0010 0000b (20H)
3
0
0
32 KByte BlockErase4
Erase 32 KByte block
of memory array
0101 0010b (52H)
3
0
0
Chip-Erase
Erase Full Memory Array
0110 0000b (60H) or
1100 0111b (C7H)
0
0
0
Byte-Program
To Program One Data Byte
0000 0010b (02H)
3
0
1
AAI-Word-Program5
Auto Address Increment
Programming
1010 1101b (ADH)
3
0
2 to ∞
RDSR6
Read-Status-Register
0000 0101b (05H)
0
0
1 to ∞
Instruction
EWSR7
Enable-Write-Status-Register
0110 0000b (50H)
0
0
0
WRSR
Write-Status-Register
0000 0001b (01H)
0
0
1
WREN7
Write-Enable
0000 0110b (06H)
0
0
0
WRDI
Write-Disable
0000 0100b (04H)
0
0
0
RDID8
Read-ID
1001 0000b (90H) or
1010 1011b (ABH)
3
0
1 to ∞
EBSY
Enable SO to output RY/BY#
0111 0000b (70H)
status during AAI programming
0
0
0
DBSY
Disable SO to output RY/BY# 1000 0000b (80H)
status during AAI programming
0
0
0
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to ∞
EHLD
Enable HOLD# pin functionality
of the RST#/HOLD# pin
1010 1010b (AAH)
0
0
0
20 MHz
40 MHz
T9.0 1328
1.
2.
3.
4.
5.
One bus cycle is eight clock periods.
Address bits above the most significant bit of each density can be VIL or VIH.
4 KByte Sector-Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH.
32 KByte Block-Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of data to be
programmed. Data Byte 0 will be programmed into the initial address [A23-A1] with A0=0, Data Byte 1 will be programmed into the
initial address [A23-A1] with A0 = 1.
6. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
7. Either EWSR or WREN followed by WRSR will write to the Status register. The EWSR-WRSR sequence provides backward compatibility to the SST25VF/LF series. The WREN-WRSR sequence is recommended for new designs.
8. Manufacturer’s ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer’s ID and
device ID output stream is continuous until terminated by a low-to-high transition on CE#.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
TABLE 10: Device Operation Instructions for SST25WF020 AND SST25WF040
Instruction
Description
Op Code Cycle1
Address
Cycle(s)2
Dummy
Data
Maximum
Cycle(s) Cycle(s) Frequency
Read
Read Memory
0000 0011b (03H)
3
0
1 to ∞
High-Speed Read
Read Memory at Higher Speed 0000 1011b (0BH)
3
1
1 to ∞
4 KByte SectorErase3
Erase 4 KByte of memory
array
0010 0000b (20H)
3
0
0
32 KByte BlockErase4
Erase 32 KByte block
of memory array
0101 0010b (52H)
3
0
0
64 KByte BlockErase5
Erase 64 KByte block
of memory array
1101 1000b (D8H)
3
0
0
Chip-Erase
Erase Full Memory Array
0110 0000b (60H) or
1100 0111b (C7H)
0
0
0
Byte-Program
To Program One Data Byte
0000 0010b (02H)
3
0
1
AAI-Word-Program6
Auto Address Increment
Programming
1010 1101b (ADH)
3
0
2 to ∞
RDSR7
Read-Status-Register
0000 0101b (05H)
0
0
1 to ∞
EWSR8
Enable-Write-Status-Register
0110 0000b (50H)
0
0
0
WRSR
Write-Status-Register
0000 0001b (01H)
0
0
1
WREN8
Write-Enable
0000 0110b (06H)
0
0
0
WRDI
Write-Disable
0000 0100b (04H)
0
0
0
RDID9
Read-ID
1001 0000b (90H) or
1010 1011b (ABH)
3
0
1 to ∞
EBSY
Enable SO to output RY/BY#
0111 0000b (70H)
status during AAI programming
0
0
0
DBSY
Disable SO to output RY/BY# 1000 0000b (80H)
status during AAI programming
0
0
0
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to ∞
EHLD
Enable HOLD# pin functionality
of the RST#/HOLD# pin
1010 1010b (AAH)
0
0
0
20 MHz
40 MHz
T10.0 1328
1.
2.
3.
4.
5.
6.
One bus cycle is eight clock periods.
Address bits above the most significant bit of each density can be VIL or VIH.
4 KByte Sector-Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH.
32 KByte Block-Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.
64 KByte Block-Erase addresses: use AMS-A16, remaining addresses are don’t care but must be set either at VIL or VIH.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of data to be
programmed. Data Byte 0 will be programmed into the initial address [A23-A1] with A0=0, Data Byte 1 will be programmed into the
initial address [A23-A1] with A0 = 1.
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
8. Either EWSR or WREN followed by WRSR will write to the Status register. The EWSR-WRSR sequence provides backward compatibility to the SST25VF/LF series. The WREN-WRSR sequence is recommended for new designs.
9. Manufacturer’s ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer’s ID and
device ID output stream is continuous until terminated by a low-to-high transition on CE#.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
11
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Read (20 MHz)
around) of the address space. For example, for 2 Mbit density, once the data from the address location 3FFFFH is
read, the next output is from address location 000000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits A23-A0. CE# must
remain active low for the duration of the Read cycle. See
Figure 6 for the Read sequence.
The Read instruction, 03H, supports up to 20 MHz Read.
The device outputs a data stream starting from the specified address location. The data stream is continuous
through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically
increments until the highest memory address is reached.
Once the highest memory address is reached, the address
pointer automatically increments to the beginning (wrapCE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
23 24
15 16
31 32
39 40
47
48
55 56
63 64
70
MODE 0
ADD.
03
SI
ADD.
ADD.
MSB
MSB
N
DOUT
HIGH IMPEDANCE
SO
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
MSB
1328 Fx6.0
FIGURE 6: Read Sequence
High-Speed-Read (40 MHz)
addresses until terminated by a low-to-high transition on
CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once
the highest memory address is reached, the address
pointer will automatically increment to the beginning (wraparound) of the address space. For example, for 2 Mbit density, once the data from address location 3FFFFH is read,
the next output will be from address location 000000H.
The High-Speed-Read instruction supporting up to 40 MHz
Read is initiated by executing an 8-bit command, 0BH, followed by address bits [A23-A0] and a dummy byte. CE#
must remain active low for the duration of the High-SpeedRead cycle. See Figure 7 for the High-Speed-Read
sequence.
Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the specified address
location. The data output stream is continuous through all
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
80
71 72
MODE 0
0B
SI
ADD.
ADD.
ADD.
X
MSB
SO
N
DOUT
HIGH IMPEDANCE
MSB
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
1328 F07.0
FIGURE 7: High-Speed-Read Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
12
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Byte-Program
Program instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait TBP for the completion of the internal
self-timed Byte-Program operation. See Figure 8 for the
Byte-Program sequence.
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
CE#
MODE 3
SCK
0 1 2 3 4 5
6 7 8
15 16
23 24
31 32
39
MODE 0
SI
02
ADD.
ADD.
MSB
SO
ADD.
DIN
MSB LSB
HIGH IMPEDANCE
1328 F08.0
FIGURE 8: Byte-Program Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
13
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Auto Address Increment (AAI) Word-Program
Hardware End-of-Write Detection
The AAI program instruction allows multiple bytes of data to
be programmed without re-issuing the next sequential
address location. This feature decreases total programming time when multiple bytes or the entire memory array
is to be programmed. An AAI Word program instruction
pointing to a protected memory area will be ignored. The
selected address range must be in the erased state (FFH)
when initiating an AAI Word Program operation. While
within AAI Word Programming sequence, the only valid
instructions are AAI Word (ADH), RDSR (05H), or WRDI
(04H). Users have three options to determine the completion of each AAI Word program cycle: hardware detection
by reading the Serial Output, software detection by polling
the BUSY bit in the software status register or wait TBP.
Refer to End-Of-Write Detection section for details.
The Hardware End-of-Write detection method eliminates
the overhead of polling the Busy bit in the Software Status
Register during an AAI Word program operation. The 8-bit
command, 70H, configures the Serial Output (SO) pin to
indicate Flash Busy status during AAI Word programming,
as shown in Figure 9. The 8-bit command, 70H, must be
executed prior to executing an AAI Word-Program instruction. Once an internal programming operation begins,
asserting CE# will immediately drive the status of the internal flash status on the SO pin. A ‘0’ indicates the device is
busy and a ‘1’ indicates the device is ready for the next
instruction. De-asserting CE# will return the SO pin to tristate.
The 8-bit command, 80H, disables the Serial Output (SO)
pin to output busy status during AAI-Word-program operation, and re-configures SO as an output pin. In this state,
the SO pin will function as a normal Serial Output pin. At
this time, the RDSR command can poll the status of the
Software Status Register. This is shown in Figure 10.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. The AAI Word Program
instruction is initiated by executing an 8-bit command,
ADH, followed by address bits [A23-A0]. Following the
addresses, two bytes of data are input sequentially, each
one from MSB (Bit 7) to LSB (Bit 0). The first byte of data
(D0) will be programmed into the initial address [A23-A1]
with A0 = 0, the second byte of Data (D1) will be programmed into the initial address [A23-A1] with A0 = 1. CE#
must be driven high before the AAI Word Program instruction is executed. The user must check the BUSY status
before entering the next valid command. Once the device
indicates it is no longer busy, data for the next two sequential addresses may be programmed and so on. When the
last desired byte had been entered, check the busy status
using the hardware method or the RDSR instruction and
execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. Check the busy status after WRDI to determine if the device is ready for any command. See Figures
11 and 12 for AAI Word programming sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
70
SI
MSB
SO
HIGH IMPEDANCE
1328 F09.0
FIGURE 9: Enable SO as Hardware RY/BY#
during AAI Programming
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the
device will exit AAI operation and reset the Write-EnableLatch bit (WEL = 0) and the AAI bit (AAI = 0).
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
End-of-Write Detection
80
SI
There are three methods to determine completion of a program cycle during AAI Word programming: hardware
detection by reading the Serial Output, software detection
by polling the BUSY bit in the Software Status Register or
wait TBP.
MSB
SO
HIGH IMPEDANCE
1328 F10.0
FIGURE 10: Disable SO as Hardware RY/BY#
during AAI Programming
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
CE#
8
0
8 0
16
8
48
40
32
24
0
16
8
24 0
16
8
24
8
8 0
0
16
SCK
SI
WREN
AD
A
A
A
D0
AD
D1
D2
D3
AD
Dn-1
Dn
Last 2
Data Bytes
Load AAI command, Address, 2 bytes data
WRDI
RDSR
WRDI to exit
AAI Mode
DOUT
SO
Check for Flash Busy Status to load next valid command
Output Status
Register Data
Note: 1. Valid commands during AAI programming: AAI command or WRDI command
2. User must configure the SO pin to output Flash Busy status during AAI programming
1328 F11.1
FIGURE 11: Auto Address Increment (AAI) Word Program Sequence
with Hardware End-of-Write Detection
Check for Flash Busy Status to load next valid command
CE#
8
0
8 0
16
8
24
32
40
48
24 0
16
8
0
16
8
24
0
8
0
8
16
SCK
SI
WREN
AD
A
A
A
D0
D1
AD
D2
D3
AD
Load AAI command, Address, 2 bytes data
Dn-1
Dn
WRDI
Last 2
Data Bytes
WRDI to exit
AAI Mode
RDSR
SO
DOUT
Output Status
Register Data
Note:
Valid commands during AAI programming: AAI command, Read Status Register command, or WRDI command
1328 F12.1
FIGURE 12: Auto Address Increment (AAI) Word Program Sequence
with Software End-of-Write Detection
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4
KByte sector to FFH. A Sector-Erase instruction applied to
a protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
any command sequence. The Sector-Erase instruction is
initiated by executing an 8-bit command, 20H, followed by
address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most
Significant address) are used to determine the sector
address (SAX), remaining address bits can be VIL or VIH.
CE# must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or wait TSE for the completion of the internal self-timed
Sector-Erase cycle. See Figure 13 for the Sector-Erase
sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADD.
20
SI
MSB
ADD.
ADD.
MSB
SO
HIGH IMPEDANCE
1326 F13.0
FIGURE 13: Sector-Erase Sequence
32-KByte Block-Erase
address bits [A23-A0]. Address bits [AMS-A15] (AMS = Most
Significant Address) are used to determine block address
(BAX), remaining address bits can be VIL or VIH. CE# must
be driven high before the instruction is executed. Poll the
Busy bit in the software status register or wait TBE for the
completion of the internal self-timed Block-Erase. See Figure 14 for the Block-Erase sequences.
The Block-Erase instruction clears all bits in the selected 32
KByte block to FFH. A Block-Erase instruction applied to a
protected memory area is ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any
command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADDR
52
SI
MSB
SO
ADDR
ADDR
MSB
HIGH IMPEDANCE
1328 F14.0
FIGURE 14: 32-KByte Block-Erase Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
16
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
64-KByte Block-Erase for SST25WF020 and SST25WF040
address bits [A23-A0]. Address bits [AMS-A16] (AMS = Most
Significant Address) are used to determine block address
(BAX), remaining address bits can be VIL or VIH. CE# must
be driven high before the instruction is executed. Poll the
Busy bit in the software status register or wait TBE for the
completion of the internal self-timed Block-Erase. See Figure 15 for the Block-Erase sequences.
The Block-Erase instruction clears all bits in the selected 64
KByte block to FFH. A Block-Erase instruction applied to a
protected memory area is ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any
command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, D8H, followed by
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADDR
D8
SI
MSB
ADDR
ADDR
MSB
SO
HIGH IMPEDANCE
1328 F15.0
FIGURE 15: 64-KByte Block-Erase Sequence
Chip-Erase
by executing an 8-bit command, 60H or C7H. CE# must be
driven high before the instruction is executed. The user may
poll the Busy bit in the software status register or wait TCE
for the completion of the internal self-timed Chip-Erase
cycle. See Figure 16 for the Chip-Erase sequence.
The Chip-Erase instruction clears all bits in the device to
FFH. A Chip-Erase instruction is ignored if any of the memory area is protected. Prior to any Write operation, the
Write-Enable (WREN) instruction must be executed. CE#
must remain active low for the duration of the Chip-Erase
instruction sequence. The Chip-Erase instruction is initiated
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
60 or C7
SI
MSB
SO
HIGH IMPEDANCE
1328 F16.0
FIGURE 16: Chip-Erase Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Read-Status-Register (RDSR)
the device. CE# must be driven low before the RDSR
instruction is entered and remain low until the status data is
read. Read-Status-Register is continuous with ongoing
clock cycles until it is terminated by a low to high transition
of the CE#. See Figure 17 for the RDSR instruction
sequence.
The Read-Status-Register (RDSR) instruction, 05H, allows
reading of the status register. The status register may be
read at any time even during a Write (Program/Erase)
operation. When a Write operation is in progress, the Busy
bit may be checked before sending any new commands to
assure that the new commands are properly received by
CE#
MODE 3
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
MODE 0
05
SI
MSB
SO
HIGH IMPEDANCE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
Status
Register Out
1327 F17.0
FIGURE 17: Read-Status-Register (RDSR) Sequence
Write-Enable (WREN)
the Write-Enable-Latch bit in the Status Register will be
cleared upon the rising edge CE# of the WRSR instruction.
CE# must be driven high before the WREN instruction is
executed. See Figure 18 for the WREN instruction
sequence.
The Write-Enable (WREN) instruction, 06H, sets the WriteEnable-Latch bit in the Status Register to 1 allowing Write
operations to occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. The
WREN instruction may also be used to allow execution of
the Write-Status-Register (WRSR) instruction; however,
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
06
SI
MSB
SO
HIGH IMPEDANCE
1328 F18.0
FIGURE 18: Write Enable (WREN) Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Write-Disable (WRDI)
program operation in progress may continue up to TBP after
executing the WRDI instruction. CE# must be driven high
before the WRDI instruction is executed. See Figure 19 for
the WRDI instruction sequence.
The Write-Disable (WRDI) instruction, 04H, resets the
Write-Enable-Latch bit and AAI to 0 disabling any new
Write operations from occurring. The WRDI instruction will
not terminate any programming operation in progress. Any
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
04
SI
MSB
SO
HIGH IMPEDANCE
1328 Fx19.0
FIGURE 19: Write Disable (WRDI) Sequence
Enable-Write-Status-Register (EWSR)
WRSR instruction is entered and driven high before the
WRSR instruction is executed. See Figure 20 for EWSR or
WREN and WRSR instruction sequences.
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction and
opens the status register for alteration. The Write-StatusRegister instruction must be executed immediately after the
execution of the Enable-Write-Status-Register instruction.
This two-step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP (software data protection) command structure which prevents
any accidental alteration of the status register values. CE#
must be driven low before the EWSR instruction is entered
and must be driven high before the EWSR instruction is
executed. See Figure 20 for EWSR instruction followed by
WRSR instruction.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to ‘1’. When
the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to
lock-down the status register, but cannot be reset from ‘1’ to
‘0’. When WP# is high, the lock-down function of the BPL
bit is disabled and the BPL, BP0, and BP1 bits in the status
register can all be changed. As long as BPL bit is set to ‘0’
or WP# pin is driven high (VIH) prior to the low-to-high transition of the CE# pin at the end of the WRSR instruction,
the bits in the status register can all be altered by the
WRSR instruction. In this case, a single WRSR instruction
can set the BPL bit to ‘1’ to lock down the status register as
well as altering the BP0, and BP1 bits at the same time.
See Table 3 for a summary description of WP# and BPL
functions.
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to
the BP1, BP0, and BPL bits of the status register. CE#
must be driven low before the command sequence of the
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
MODE 3
MODE 0
50 or 06
SI
01
MSB
SO
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
MSB
STATUS
REGISTER IN
7 6 5 4 3 2 1 0
MSB
HIGH IMPEDANCE
1328 F20.0
FIGURE 20: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Status-Register
(WRSR) Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Enable-Hold (EHLD)
The 8-bit command, AAH, Enable-Hold instruction enables
the HOLD functionality of the RST#/HOLD# pin. CE# must
remain active low for the duration of the Enable-Hold
instruction sequence. CE# must be driven high before the
instruction is executed. See Figure 21 for the Enable-Hold
instruction sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
AA
SI
MSB
SO
HIGH IMPEDANCE
1328 F21.0
FIGURE 21: Enable-Hold Sequence
Read-ID
TABLE 11: Product Identification
The Read-ID instruction identifies the manufacturer as SST
and the device as SST25WF512/010/020/040. Use the
Read-ID instruction to identify SST device when using multiple manufacturers in the same socket. See Table 11.
The device information is read by executing an 8-bit command, 90H or ABH, followed by address bits [A23-A0]. Following the Read-ID instruction, the manufacturer’s ID is
located in address 000000H and the device ID is located in
address 000001H. Once the device is in Read-ID mode,
the manufacturer’s and device ID output data toggles
between address 000000H and 000001H until terminated
by a low to high transition on CE#.
Address
Data
Manufacturer’s ID
000000H
BFH
Device ID
SST25WF512
SST25WF010
SST25WF020
SST25WF040
000001H
000001H
000001H
000001H
01H
02H
03H
04H
T11.1328
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
23 24
15 16
31 32
39 40
47 48
55 56
63
MODE 0
90 or AB
SI
00
MSB
00
ADD
MSB
HIGH IMPEDANCE
SO
BF
Device ID
BF
Device ID
HIGH
IMPEDANCE
MSB
Note: 1. The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#.
2. 00H will output the manfacturer's ID first and 01H will output device ID first before toggling between the two.
1328 F22.0
FIGURE 22: Read-ID Sequence
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
JEDEC Read-ID
contains the type of memory in the first byte and the memory capacity of the device in the second byte. See Figure
23 for the instruction sequence. The JEDEC Read ID
instruction is terminated by a low to high transition on CE#
at any time during data output.
The JEDEC Read-ID instruction identifies the device as
SST25WF512/010/020/040 and the manufacturer as SST.
The device information can be read from executing the 8bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, BFH, is output from the
device. After that, a 16-bit device ID is shifted out on the SO
pin. The Device ID is assigned by the manufacturer and
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
MODE 0
SI
SO
9F
HIGH IMPEDANCE
25
BF
MSB
Note:
Byte 3
MSB
See for Table 12 for Device ID Byte 3 value.
1328 F23.0
FIGURE 23: JEDEC Read-ID Sequence
TABLE 12: JEDEC Read-ID Data-Out for SST25WF512
Device ID
Product
Manufacturer’s ID (Byte 1)
Memory Type (Byte 2)
Memory Capacity (Byte 3)
SST25WF512
BFH
25H
01H
SST25WF010
BFH
25H
02H
SST25WF020
BFH
25H
03H
SST25WF040
BFH
25H
04H
T12.0 1328
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Range
Range
Ambient Temp
VDD
Industrial
-40°C to +85°C
1.65-1.95V
Industrial (extended)1
-40°C to +105°C
1.70-1.90V
1. Contact SST Sales for available extended industrial
temperature devices.
AC Conditions of Test
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
©2009 Silicon Storage Technology, Inc.
S71328-08-000
22
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Power-Up Specifications
All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V
in less than 180 ms). If the VDD ramp rate is slower than 1V/100 µs, a hardware reset is required. The recommended VDD power-up to RESET# high time should be greater than 100 µs to ensure a proper reset. See Table 13
and Figures 24 and 25 for more information.
TABLE 13: Recommended System Power-up Timings
Symbol
Parameter
TPU-READ1
Minimum
Units
VDD Min to Read Operation
100
µs
TPU-WRITE1
VDD Min to Write Operation
100
µs
T13.0 1328
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TPU-READ
VDD min
VDD
0V
VIH
RESET#
TRECR
CE#
1328 F37.1
Note: See Table 2 on page 5 for TRECR parameter.
FIGURE 24: Power-Up Reset Diagram
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
VDD
VDD Max
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
VDD Min
TPU-READ
TPU-WRITE
Device fully accessible
Time
1326 F27.0
FIGURE 25: Power-up Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71328-08-000
24
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
DC Characteristics
TABLE 14: DC Operating Characteristics
Limits
Symbol
Parameter
IDDR
Read Current
IDDR2
Read Current
IDDW
ISB
ILI
ILO
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
Min
Typ1
Max
Units
2
5
mA
CE#=0.1 VDD/0.9 VDD@20 MHz, SO=open
4
10
mA
CE#=0.1 VDD/0.9VDD@40 MHz, SO=open
Program and Erase Current
6
10
mA
CE#=VDD
Standby Current
2
8
µA
CE#=VDD, VIN=VDD or VSS
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
0.3
V
VDD=VDD Min
V
VDD=VDD Max
V
IOL=100 µA, VDD=VDD Min
V
IOH=-100 µA, VDD=VDD Min
0.7 VDD
0.2
VDD-0.2
Test Conditions
T14.0 1328
1. Value characterized, not fully tested in production.
TABLE 15: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
COUT
1
CIN1
Description
Output Pin Capacitance
Input Capacitance
Test Condition
Maximum
VOUT = 0V
12 pF
VIN = 0V
6 pF
T15.0 1328
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 16: Reliability Characteristics
Symbol
NEND
1
Parameter
Minimum Specification
Units
Endurance
100,000
Cycles
JEDEC Standard A117
100
Years
JEDEC Standard A103
100 + IDD
mA
TDR1
Data Retention
ILTH1
Latch Up
Test Method
JEDEC Standard 78
T16.0 1328
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
25
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
AC Characteristics
TABLE 17: AC Operating Characteristics
Symbol
Parameter
Limits - 20 MHz
Limits - 40 MHz
Min
Min
Max
Max
Units
40
MHz
1
Serial Clock Frequency
TSCKH
Serial Clock High Time
20
TSCKL
Serial Clock Low Time
20
TSCKR
Serial Clock Rise Time
TSCKF
Serial Clock Fall Time
TCES2
CE# Active Setup Time
TCEH2
CE# Active Hold Time
20
8
ns
TCHS2
CE# Not Active Setup Time
10
10
ns
TCHH2
CE# Not Active Hold Time
10
10
ns
TCPH
CE# High Time
50
25
ns
TCHZ
CE# High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
ns
TDS
Data In Setup Time
5
2
ns
TDH
Data In Hold Time
5
5
ns
THLS
HOLD# Low Setup Time
10
8
ns
THHS
HOLD# High Setup Time
10
8
ns
THLH
HOLD# Low Hold Time
15
12
ns
THHH
HOLD# High Hold Time
10
10
ns
THZ
HOLD# Low to High-Z Output
20
20
ns
TLZ
HOLD# High to Low-Z Output
20
20
ns
TOH
Output Hold from SCK Change
TV
Output Valid from SCK
9
ns
TSE
Sector-Erase
75
75
ms
TBE
Block-Erase
75
75
ms
Chip-Erase
150
150
ms
Byte-Program
60
60
FCLK
TSCE
TBP
3
20
11
ns
11
5
5
20
ns
5
ns
5
ns
8
20
0
ns
19
0
20
ns
ns
µs
T17.1 1328
1. Maximum clock frequency for Read instruction, 03H, is 20 MHz
2. Relative to SCK
3. AAI-Word Program TBP maximum specification is also at 60 µs maximum time
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
TCPH
CE#
TCES
TCHH
TCHS
TCEH
SCK
TDS
TDH
TSCKR
MSB
SI
LSB
HIGH-Z
HIGH-Z
SO
TSCKF
1326 F24.0
FIGURE 26: Serial Input Timing Diagram
CE#
TSCKL
TSCKH
SCK
TOH
TCLZ
SO
TCHZ
MSB
LSB
TV
SI
1328 F25.0
FIGURE 27: Serial Output Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71328-08-000
27
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
CE#
THHH
THLS
THHS
SCK
THLH
THZ
TLZ
SO
SI
HOLD#
1328 F26.0
FIGURE 28: Hold Timing Diagram
VIHT
VHT
INPUT
VHT
REFERENCE POINTS
OUTPUT
VLT
VLT
VILT
1326 F28.0
AC test inputs are driven at VIHT (0.9VDD) for a logic ‘1’ and VILT (0.1VDD) for a logic ‘0’. Measurement reference points for
inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
Note: VHT - VHIGH Test
VLT - VLOW Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
FIGURE 29: AC Input/Output Reference Waveforms
©2009 Silicon Storage Technology, Inc.
S71328-08-000
28
11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
PRODUCT ORDERING INFORMATION
SST
25 WF
XX XX
XXX
XXX
- 40
- XX
- 5I - SA
- XX - XX
F
X
Environmental Attribute
E1 = non-Pb
F2 = non-Pb / non-Sn contact (lead) finish:
Nickel plating with Gold top (outer) layer
Package Modifier
A = 8 leads
Package Type
Q= WSON
S = SOIC 150 mil body width
Temperature Range
I = Industrial = -40°C to +85°C
Minimum Endurance
5 = 100,000 cycles
Operating Frequency
40 = 40 MHz
Device Density
512 = 512 Kbit
010 = 1 Mbit
020 = 2 Mbit
040 = 4 Mbit
Voltage
W= 1.65-1.95V
Product Series
25 = Serial Peripheral Interface flash memory
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
2. Environmental suffix “F” denotes non-Pb/non-SN solder.
SST non-Pb/non-Sn solder devices are “RoHS Compliant”.
Valid combinations for SST25WF512
SST25WF512-40-5I-SAF
Valid combinations for SST25WF010
SST25WF010-40-5I-SAF
Valid combinations for SST25WF020
SST25WF020-40-5I-SAF
SST25WF020-40-5I-QAE
Valid combinations for SST25WF040
SST25WF040-40-5I-SAF
SST25WF040-40-5I-QAE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
PACKAGING DIAGRAMS
Pin #1
Identifier
TOP VIEW
SIDE VIEW
7°
4 places
0.51
0.33
5.0
4.8
1.27 BSC
END VIEW
4.00
3.80
6.20
5.80
45°
0.25
0.10
1.75
1.35
7°
4 places
0.25
0.19
Note: 1. Complies with JEDEC publication 95 MS-012 AA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads.
0°
8°
08-soic-5x6-SA-8
1.27
0.40
1mm
FIGURE 30: 8-Lead Small Outline Integrated Circuit (SOIC)
SST Package Code: SA
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
TOP VIEW
SIDE VIEW
BOTTOM VIEW
Pin #1
0.2
Pin #1
Corner
1.27 BSC
5.00 ± 0.10
0.076
4.0
0.48
0.35
3.4
0.70
0.50
0.05 Max
6.00 ± 0.10
0.80
0.70
Note:
1. All linear dimensions are in millimeters (max/min).
2. Untoleranced dimensions (shown with box surround)
are nominal target dimensions.
3. The external paddle is electrically connected to the
die back-side and possibly to certain VSS leads.
This paddle can be soldered to the PC board;
it is suggested to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential can
result in shorts and/or electrical malfunction of the device.
CROSS SECTION
0.80
0.70
1mm
8-wson-5x6-QA-9.0
FIGURE 31: 8-Contact Very-very-thin Small Outline No-lead (WSON)
SST Package Code: QA
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
TABLE 18: Revision History
Number
Description
Date
00
•
Initial release of data sheet
Nov 2006
01
•
•
Removed “Commercial” Temperature Range
Added references to Tables 6 and 7 in “Block-Protection (BP2, BP1, BP0)” on
page 8
Modified EWSR and WREN footnote information and updated EBSY Op Code
Cycle in Tables 9 and 10
Re-phrased first paragraph in “Instructions” on page 10
Updated “Byte-Program” on page 13
Clarified SO pin statement in second paragraph of “Hardware End-of-Write Detection” on page 14
Added Industrial (extended) values to Operating Range in “Electrical Specifications” on page 22
Added “Power-Up Specifications” on page 23
Added typical values to Table 14 on page 25
Added contact-lead composition, updated minimum endurance from 10,000 to
100,000 cycles, and changed product valid combinations in “Product Ordering
Information” on page 29
Feb 2007
•
•
•
•
•
•
•
•
02
•
•
•
•
Added SST25WF040 product to this data sheet
Changed 01/02/03 in Figure 21 to Byte 3 and revised note.
Updated ILO and ILI values in Table 14
Updated TCPH values in Table 17
Aug 2007
03
•
•
Corrected heading typo throughout
Modified Table 8 on page 9
Oct 2007
04
•
Updated Power Consumption Specs in Features on page 1 and in Table 14 on
page 25
Changed Standby Current to 2 µA in Features
Edited Table 14, “DC Operating Characteristics,” on page 25
IDDR2 Typ 4 mA and ISB Typ/Max 2/8 µA
May 2008
•
•
05
•
Changed document status from Preliminary Specification to Data sheet
Aug 2008
06
•
Added information for QAE package.
Aug 2009
07
•
Revised footnote for Table , “Operating Range,” on page 22
Sep 2009
08
•
Added valid combination SST25WF040-40-5I-QAE
Nov 2009
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2009 Silicon Storage Technology, Inc.
S71328-08-000
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11/09