STT818B High gain low voltage PNP power transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (hFE) ■ 3 A continuous collector current (IC) Applications ■ Power management in portable equipments ■ Switching regulator in battery charger applications SOT23-6L Description The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STT818B 818B SOT23-6L Tape & reel August 2007 Rev 5 1/10 www.st.com 10 Contents STT818B Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STT818B 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -30 V VCEO Collector-emitter voltage (IB = 0) -30 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current -3 A Collector peak current (tP < 5ms) -6 A Base current -0.2 A IBM Base peak current (tP < 5ms) -0.5 A Ptot Total dissipation at Tamb = 25°C 1.2 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 104.2 °C/W IC ICM IB TJ Table 3. Symbol Rthj-amb (1) Max. operating junction temperature Thermal data Parameter Thermal resistance junction-ambient max 1. Package mounted on FR4 pcb 25mm x 25mm. 3/10 Electrical characteristics 2 STT818B Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter ICBO Collector cut-off current (IE =0) IEBO Collector-cut-off current (IC = 0) Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Test conditions VBE(sat) hFE(1) VBE(ON)(1) Base-emitter saturation voltage DC current gain Base-emitter voltage 1. Pulse duration = 300 µs, duty cycle 1.5 %. 4/10 Typ. VCB = -30 V VCB = -30 V TC = 125°C VEB = -5 V IC = -10 mA _ IB = -5 mA IC = -1.2 A IB = -12 mA IC = -0.5 A IC = -1.2A IC = -2A Max. Unit -0.1 -20 µA µA -0.1 µA -30 IC = -0.5 A IC = -2 A (1) Min. V -0.075 -0.15 -0.3 -0.5 V V V _ IB = -20 mA -0.21 _ IB = -5 mA -0.74 -1.1 -1.1 -1.2 V V V -0.71 -1.1 V _ IB = -12 mA _ IB = -20 mA IC = -0.5 A VCE = -1 V 100 IC = -2.5 A VCE = -3 V 100 IC = -0.5 A VCE = -2 V STT818B 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC Current Gain Figure 5. DC Current Gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage 5/10 Electrical characteristics Figure 8. 6/10 Switching times resistive load STT818B Figure 9. Switching times resistive load STT818B 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STT818B SOT23-6L MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 8/10 MAX. STT818B 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 12-Jul-2002 4 No content change; the document has been reformatted 08-Aug-2007 5 Updated Figure 3 9/10 STT818B Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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