TAE 4453 TAF 4453 Quad PNP-Operational Amplifier Bipolar IC Features ● ● ● ● ● ● ● ● ● ● Supply voltage range between 3 V and 36 V Low current consumption, 1.6 mA typ. Extremely large control range Low output saturation voltage, almost independent of load current Output current up to 70 mA (100 mA max.) Output virtually short-circuit proof Wide common-mode range Wide temperature range (TAF 4453 G) Pin-compatible to LM 324 The typical characteristics of the electric parameters correspond to those of the TAE 1453 G P-DSO-14-1 Applications ● ● ● ● ● Amplifier Level converter Driver Offset voltage switch Comparator Type Ordering Code Package TAE 4453 G Q67000-A2152 P-DSO-14-1 (SMD) TAF 4453 G Q67000-A2213 P-DSO-14-1 (SMD) The TAE 4453 / TAF 4453 consists of four independent, frequency-compensated op amps, each having a PNP-input differential stage and an open collector output. The integrated regulator provides for all parameters a large degree of independence of the supply voltage. Semiconductor Group 1 01.96 TAE 4453 TAF 4453 Pin Configurations (top view) TAE 4453 G TAF 4453 G RL = load resistance (collector resistance) Connection Diagram Semiconductor Group 2 TAE 4453 TAF 4453 Circuit Diagram of One Op Amp Semiconductor Group 3 TAE 4453 TAF 4453 Absolute Maximum Ratings (TAE 4453 G) Parameter Symbol Limit Values Unit Supply voltage VS ± 18 V Output current IQ 100 mA Differential input voltage VID ± VS V Junction temperature Storage temperature range Tj Tstg 150 – 55 to 125 °C °C Thermal resistance system - air TAE 4453 G Rth SA 120 K/W Supply voltage VS ± 2 to ± 18 (± 1.5 V with slightly increased offset voltage) V Ambient temperature TA – 25 to 85 °C Operating Range (TAE 4453 G) Characteristics (TAE 4453 G) VS = ± 5 V to ± 15 V; RL = 10 kΩ, unless otherwise specified Parameter Symbol Limit Values TA = 25 °C min. Open-loop supply current consumption, total IS Input offset voltage, RG = 50 Ω VIO – 5.5 Input offset current Input current IIO II – 15 Control range RL = 2 kΩ, VS = ± 15 V RL = 620 Ω, VS = ± 15 V VQ pp VQ pp 14.9 14.9 Semiconductor Group typ. max. 1.6 3.0 40 4 Limit Values Unit TA = – 25 to 85 °C min. max. 3.6 mA 5.5 –7 7 mV 15 150 – 25 25 200 nA nA – 14.7 – 14.5 14.9 14.9 – 14.7 – 14.4 V V TAE 4453 TAF 4453 Characteristics (TAE 4453 G) (cont’d) VS = ± 5 V to ± 15 V; RL = 10 kΩ, unless otherwise specified Parameter Symbol Limit Values TA = 25 °C min. typ. max. Limit Values Unit TA = – 25 to 85 °C min. max. Input impedance, f = 1 kHz ZI Open-loop voltage gain RL = 2 kΩ GV0 Output reverse current IQR Common-mode input voltage range RL = 2 kΩ VIC – VS – 0.2 Common-mode rejection RL = 2 kΩ kCMR 75 Supply voltage rejection GV = 100 kSVR 25 Temperature coefficient of IIO RG = 50 Ω Temperature coefficient of VIO RG = 50 Ω αIIO 0.1 nA/K αVIO 6 µV/K SR 0.65 0.25 1.0 V/µs SR 1.1 0.5 1.6 V/µs Slew rate for non-inverting operation Slew rate for inverting operation Semiconductor Group 200 80 kΩ 85 80 10 5 + VS – 1.8 80 – VS dB 20 µA + VS – 2.0 V 75 100 dB 100 µV/V TAE 4453 TAF 4453 Characteristics (TAE 4453 G) VS = ± 2 V Parameter Symbol Limit Values TA = 25 °C min. Input offset voltage, RG = 50 Ω VIO –6 Input offset current Input current IIO II – 15 Open-loop voltage gain; RL = 2 kΩ GV0 70 typ. 40 Limit Values TA = – 25 to 85 °C Unit max. min. max. 6 – 7.5 7.5 mV 15 150 – 100 100 200 nA nA 70 dB Absolute Maximum Ratings (TAF 4453 G) Parameter Symbol Limit Values Unit Supply voltage VS ± 18 V Output current IQ 100 mA Differential input voltage VID ± VS V Junction temperature Storage temperature range Tj Tstg 150 – 55 to 125 °C °C Thermal resistance system - air TAF 4453 G Rth SA 120 K/W Supply voltage VS ± 2 to ± 18 (± 1.5 V with slightly increased offset voltage) V Ambient temperature TA – 55 to 125 °C Operating Range (TAF 4453 G) Semiconductor Group 6 TAE 4453 TAF 4453 Characteristics (TAF 4453 G) VS = ± 5 V to ± 15 V; RL = 10 kΩ, unless otherwise specified Parameter Symbol Limit Values TA = 25 °C min. Open-loop supply current consumption, total typ. max. Limit Values Unit TA = – 55 to 125 °C min. max. mA IS 1.6 3.0 3.6 Input offset voltage, RG = 50 Ω VIO –4 4 –6 6 mV Input offset current Input current IIO II – 10 10 100 – 15 15 150 nA nA RL = 2 kΩ, VS = ± 15 V RL = 620 Ω, VS = ± 15 V VQ pp VQ pp 14.9 14.9 – 14.7 – 14.5 14.8 14.8 – 14.7 – 14.4 V V Input impedance, f = 1 kHz ZI Open-loop voltage gain RL = 2 kΩ GV0 Output reverse current IQR Common-mode input voltage range RL = 2 kΩ VIC – VS – 0.2 Common-mode rejection, RL = 2 kΩ kCMR 80 Supply voltage rejection, GV = 100 kSVR 40 Control range Semiconductor Group 200 85 kΩ 87 80 1 + VS – 1.5 85 25 7 – VS + 0.2 dB 5 µA + VS – 1.8 V 75 100 dB 100 µV/V TAE 4453 TAF 4453 Characteristics (TAF 4453 G) (cont’d) VS = ± 5 V to ± 15 V; RL = 10 kΩ, unless otherwise specified Parameter Symbol Limit Values TA = 25 °C min. Temperature coefficient of IIO RG = 50 Ω Temperature coefficient of VIO RG = 50 Ω Slew rate for non-inverting operation Slew rate for inverting operation Limit Values Unit TA = – 55 to 125 °C typ. max. min. max. αIIO 0.1 0.8 0.8 nA/K αVIO 6 25 25 µV/K SR 0.65 0.2 0.65 V/µs SR 1.1 0.4 1.7 V/µs Characteristics (TAF 4453 G) VS = ± 2 V Parameter Symbol Limit Values TA = 25 °C min. typ. Limit Values Unit TA = – 55 to 125 °C max. min. max. Input offset voltage, RG = 50 Ω VIO –4 4 –6 6 mV Input offset current Input current IIO II – 50 50 100 – 75 75 150 nA nA Open-loop voltage gain RL = 2 kΩ GV0 75 40 70 dB Note: For typical performance curves, please refer to the data sheets of TAE 1453 and TAF 1453. Semiconductor Group 8