TC74VHC03F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC03F,TC74VHC03FT,TC74VHC03FK Quad 2-Input NAND Gate (open drain) TC74VHC03F The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the TC74VHC00. But the TC74VHC03 has, as its outputs, high performance MOS N-channel transistors. (OPEN-DRAIN outputs) This device can, therefore, with a suitable pull-up resistors, be used in wired-AND, LED driver and other application. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Features • TC74VHC03FT TC74VHC03FK High speed: tpZ = 3.7 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Wide operating voltage range: VCC (opr) = 2 to 5.5 V • Low noise: VOLP = 0.8 V (max) • Pin and function compatible with 74ALS03 Weight SOP14-P-300-1.27A TSSOP14-P-0044-0.65A VSSOP14-P-0030-0.50 1 : 0.18 g (typ.) : 0.06 g (typ.) : 0.02 g (typ.) 2012-02-29 TC74VHC03F/FT/FK Pin Assignment IEC Logic Symbol 1A 1 14 VCC 1B 2 13 4B 1Y 3 12 4A 2A 11 4 1A 1B 2A 2B 3A 3B 4Y 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y 4A 4B (1) (2) & (3) (4) 1Y (6) (5) (9) 2Y (8) (10) (12) 3Y (11) (13) 4Y (top view) Truth Table A B Y L L Z L H Z H L Z H H L System Diagram (per gate) VCC Y A B Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7.0 V DC input voltage VIN −0.5 to 7.0 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT 25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 180 mW Storage temperature Tstg −65 to 150 °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2012-02-29 TC74VHC03F/FT/FK Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 5.5 V Input voltage VIN 0 to 5.5 V VOUT 0 to VCC V −40 to 85 °C Output voltage Operating temperature Topr Input rise and fall time Note: 0 to 100 (VCC = 3.3 ± 0.3 V) dt/dv ns/V 0 to 20 (VCC = 5 ± 0.5 V) The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Characteristics Test Condition Symbol Min 2.0 1.50 3.0 to 5.5 VCC × 0.7 ― ― ― 3.0 to 5.5 ― ― VCC × 0.3 ― VCC × 0.3 2.0 ― 0.0 0.1 ― 0.1 3.0 ― 0.0 0.1 ― 0.1 4.5 ― 0.0 0.1 ― 0.1 IOL = 4 mA 3.0 ― ― 0.36 ― 0.44 IOL = 8 mA 4.5 ― ― 0.36 ― 0.44 5.5 ― ― ±0.25 ― ±2.50 μA VIH ― Low-level input voltage VIL ― 2.0 IOL = 50 μA VOL Unit VCC (V) High-level input voltage Low-level output voltage Ta = −40 to 85°C Ta = 25°C VIN = VIH VIN = VIH or VIL Typ. Max ― ― ― 0.50 Min 1.50 VCC × 0.7 ― Max ― ― V 0.50 V V Output off-state current IOZ Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ― ― 2.0 ― 20.0 μA VOUT = VCC or GND 3 2012-02-29 TC74VHC03F/FT/FK AC Characteristics (input: tr = tf = 3 ns) Characteristics Test Condition Symbol VCC (V) CL (pF) Min Typ. Max Min Max 15 ― 5.5 7.9 1.0 9.5 50 ― 8.0 11.4 1.0 13.0 15 ― 3.7 5.5 1.0 6.5 50 ― 5.2 7.5 1.0 8.5 3.3 ± 0.3 50 ― 8.0 11.4 1.0 13.0 5.0 ± 0.5 50 ― 5.2 7.5 1.0 8.5 3.3 ± 0.3 Propagation delay time tpZL Ta = −40 to 85°C Ta = 25°C RL = 1 kΩ 5.0 ± 0.5 Unit ns Propagation delay time tpLZ Input capacitance CIN ― ― 4 10 ― 10 pF COUT ― ― 5 ― ― ― pF ― 6 ― ― ― pF Output capacitance Power dissipation capacitance RL = 1 kΩ (Note) CPD ns Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC/4 (per gate) Noise Characteristics (input: tr = tf = 3 ns) Characteristics Test Condition Symbol Ta = 25°C VCC (V) Typ. Limit Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.3 0.8 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 −0.3 −0.8 V Minimum high level dynamic input voltage VIHD CL = 50 pF 5.0 ― 3.5 V Maximum low level dynamic input voltage VILD CL = 50 pF 5.0 ― 1.5 V Input Equivalent Circuit INPUT 4 2012-02-29 TC74VHC03F/FT/FK Package Dimensions Weight: 0.18 g (typ.) 5 2012-02-29 TC74VHC03F/FT/FK Package Dimensions Weight: 0.06 g (typ.) 6 2012-02-29 TC74VHC03F/FT/FK Package Dimensions Weight: 0.02 g (typ.) 7 2012-02-29 TC74VHC03F/FT/FK RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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