TC7MBL3245SFT/FK/FTG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MBL3245SFT, TC7MBL3245SFK, TC7MBL3245SFTG Low Voltage/Low Capacitance Octal Bus Switch The TC7MBL3245S provides eight bits of low- voltage, high-speed bus switching in a standard ’245 device pinout. The low ON-resistance of the switch allows connections to be made with minimal propagation delay and while maintaining CMOS low power dissipation. The device comprises a single 8-bit switch. When output enable ( OE ) is low, the switch is on and port A is connected to port B. When OE is high, the switch is open and a high-impedance state exists between the two ports. All inputs are equipped with protection circuits to guard against static discharge. TC7MBL3245SFT TC7MBL3245SFK Features • Operating voltage: VCC = 1.65 to 3.6 V • Low capacitance: CI/O = 12 pF • Low on resistance: RON = 9 Ω (typ.) @3 V • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • Power down protection for inputs ( OE input only) • Package: TSSOP20,VSSOP (US20) , VQON20 • Pin compatible with the 74xx245 type Switch On (typ.) @3 V TC7MBL3245CFTG Note: When mounting VQON package, the type of recommended flux is RA or RMA. VQON20-P-0404-0.50 Pin Assignment (top view) FT (TSSOP20-P-0044-0.65A) FK (VSSOP20-P-0030-0.50) NC 1 20 VCC Weight TSSOP20-P-0044-0.65A VSSOP20-P-0030-0.50 VQON20-P-0404-0.50 A1 2 19 OE FTG (VQON20-P-0404-0.50) A2 3 18 B1 A3 4 17 B2 A4 5 16 B3 A3 1 15 B1 A5 6 15 B4 A4 2 14 B2 A6 7 14 B5 A5 3 13 B3 A7 8 13 B6 A6 4 12 B4 A8 9 12 B7 A7 5 11 B5 GND 10 11 B8 A2 A1 NC VCC OE 20 19 18 17 6 (top view) NC-No Internal Connection 7 8 A8 GND B8 1 : 0.08 g (typ.) : 0.03 g (typ.) : 0.0145g (typ.) 16 9 10 B7 B6 2009-01-20 TC7MBL3245SFT/FK/FTG Truth Table Inputs Function OE L A port = B port H Disconnect System Diagram A1 B1 A8 B8 OE Absolute Maximum Ratings (Note) Characteristic Symbol Rating Unit Power supply voltage VCC −0.5 to 4.6 V Control pin input voltage VIN −0.5 to 4.6 V Switch terminal I/O voltage VS −0.5 to VCC + 0.5 V −50 mA ±50 mA Clump diode Control input pin current Switch terminal IIK Switch I/O current IS 50 mA Power dissipation PD 180 mW DC VCC/GND current ICC/IGND ±100 mA Storage temperature Tstg −65 to 150 °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) Characteristic Symbol Rating Unit Power supply voltage VCC 1.65 to 3.6 V Control pin input voltage VIN 0 to 3.6 V Switch I/O voltage VS 0 to VCC V Operating temperature Topr −40 to 85 °C Input rise and fall time dt/dv 0 to 10 ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. 2 2009-01-20 TC7MBL3245SFT/FK/FTG Electrical Characteristics DC Characteristics (Ta = −40 to 85°C) Parameter Symbol Test Condition “H” level VIH ⎯ “L” level VIL ⎯ Input voltage Input leakage current Power off leakage current Off-state leakage current (switch off) On resistance (Note2) Quiescent supply current IIN IOFF ISZ RON ICC Min Typ. Max 1.65 to 3.6 0.7 × VCC ⎯ ⎯ 1.65 to 3.6 ⎯ ⎯ 0.3 × VCC 1.65 to 3.6 ⎯ ⎯ ±1.0 μA 0 ⎯ ⎯ 1.0 μA 1.65 to 3.6 ⎯ ⎯ ±1.0 μA VCC (V) VIN = 0 to 3.6V OE = 0 to 3.6 V A, B = 0 to VCC , OE = VCC Unit V VIS = 0 V, IIS = 30 mA (Note1) 3.0 ⎯ 9 13 VIS = 3.0 V, IIS = 30 mA (Note1) 3.0 ⎯ 15 20 VIS = 2.4 V, IIS = 15 mA (Note1) 3.0 ⎯ 19 27 VIS = 0 V, IIS = 24 mA (Note1) 2.3 ⎯ 10 16 VIS = 2.3 V, IIS = 24 mA (Note1) 2.3 ⎯ 17 24 VIS = 2.0 V, IIS = 15 mA (Note1) 2.3 ⎯ 21 30 3.6 ⎯ ⎯ 10 μA Min Max Unit 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 1.8 ± 0.15 ⎯ 11 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 1.8 ± 0.15 ⎯ 11 VIN = VCC or GND, IOUT = 0 Ω Note1: All typical values are at Ta=25°C. Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. AC Characteristics (Ta = −40 to 85°C) Characteristics Output enable time Output disable time Symbol tpZL tpZH tpLZ tpHZ Test Condition Figure 1, Figure 2 Figure 1, Figure 2 VCC (V) ns ns Capacitive Characteristics (Ta = 25°C) Characteristics (Note) Symbol Control pin input capacitance CIN Switch terminal capacitance CI/O Test Condition VCC (V) 3.0 Typ. Unit 3 pF OE = VCC (switch off) 3.0 6 pF OE = GND (switch on) 3.0 12 pF Note : This parameter is guaranteed by design 3 2009-01-20 TC7MBL3245SFT/FK/FTG RON Characteristic (typ.) Ta=25℃ 40 35 Vcc = 2.3V RON (Ω) 30 Vcc = 3.0V 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VIS (V) 4 2009-01-20 TC7MBL3245SFT/FK/FTG AC Test Circuit RL Switch Open 2 × VCC GND Measure RL CL Output CL = 50 pF RL = 500 Ω Parameter Switch tpLH, tpHL Open tpLZ, tpZL 2 × VCC tpHZ, tpZH GND Figure 1 AC Waveform tf 2.5 ns tr 2.5 ns 90% 50% Output Enable ( OE ) VCC 10% tpLZ GND tpZL VOH Output (A, B) Low to Off to Low 50% 10% tpHZ VOL tpZH VOH 90% Output (A, B) High to Off to High 50% VOL Outputs enabled Outputs disabled Outputs enabled Figure 2 tpLZ, tpHZ, tpZL, tpZH 5 2009-01-20 TC7MBL3245SFT/FK/FTG Rise and Fall Times (tr / tf) of the TC7MBL3245S I/O Signals The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists of the switch terminal capacitance (CI/O) and the on-resistance (RON) of the input. In practice, the tr(out) and tf(out) values are also affected by the circuit’s capacitance and resistance components other than those of the TC7MBL3245S. The tr(out) / tf(out) values can be approximated as follows. (Figure 3 shows the test circuit.) tr(out) / tf(out) (approx) = - ( CI/O + CL ) ･ (RDRIVE+ RON) ･ ln ( ( ( VOH – VOL ) – VM) / ( VOH – VOL ) ) where, RDRIVE is the output impedance of the previous-stage circuit. Calculation example: tr(out) (approx) = - ( 12+ 15 )E-12 ･ ( 120 + 9) ･ ln ( ( ( 3.0 - 0 ) – 1.5 ) / ( 3.0 – 0 ) ) ≈ 2.4ns Calculation conditions: VCC = 3.0V , CL = 15pF , RDRIVE = 120 Ω (output impedance of the previous IC), VM = 1.5V(VCC / 2) Output of the previous IC = digital (i.e., high-level voltage = VCC; low-level voltage = GND) Previous IC Waveform generated without the TC7MBL3245S Measure RDRIVE CL VCC GND RDRIVE = output impedance of the previous IC Previous IC TC7MBL3245S Waveform generated with the TC7MBL3245S added RDRIVE An/Bn CI/O (Switch On) Bn/An Measure VOH = VM VM VOL CL RON tr out tf out RDRIVE = output impedance of the previous IC Parameter VM VCC 3.3 ± 0.3 V 2.5 ± 0.2 V 1.8 ± 0.15 V VCC / 2 VCC / 2 VCC / 2 Figure 3 Test Circuit 6 2009-01-20 TC7MBL3245SFT/FK/FTG Package Dimensions Weight: 0.08g (typ.) 7 2009-01-20 TC7MBL3245SFT/FK/FTG Package Dimensions Weight: 0.03g (typ.) 8 2009-01-20 TC7MBL3245SFT/FK/FTG Package Dimensions VQON20-P-0404-0.50 Unit : mm Weight: 0.0145 g (typ.) 9 2009-01-20 TC7MBL3245SFT/FK/FTG RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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