TFA5x Series Reverse Blocking Triode Thyristor Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ Operating junction temperature to 150°C ▪ VDRM of 700 or 800 V ▪ 7.8 ARMS on-state current ▪ 7 mA typical gate trigger current ▪ Uniform switching ▪ UL Recognized Component (File No.: E118037) (suffix I) This Sanken reverse blocking triode thyristor is designed for AC power control, providing reliable, uniform switching for half-cycle AC applications. In comparison with other products on the market, the TFA5x series provides increased isolation voltage (1800 VACRMS), guaranteed for up to 1 minute. In addition, commutation dv/dt is improved. Applications Package: 3-pin SIP (TO-220F) ▪ Motor control for small tools ▪ Temperature control, light dimmers, electric blankets ▪ General use switching mode power supplies (SMPS) Not to scale Typical Applications M Single-phase motor control (for example, electric tool) 28105.02 In-rush current control (for example, SMPS) TFA5x Series Reverse Blocking Triode Thyristor Selection Guide Part Number TFA57(I) TFA57S TFA58(I) TFA58S VDRM (V) UL-Recognized Component Package Packing 700 700 800 800 Yes – Yes – 3-pin fully molded SIP with heatsink mount 50 pieces per tube Absolute Maximum Ratings Characteristic Symbol Notes TFA57x Peak Repetitive Off-State Voltage VDRM Isolation Voltage VISO AC RMS applied for 1 minute between lead and case Average On-State Current IT(AV) 50 Hz half cycle sine wave, Conduction angle (α) = 180°, continuous operation, TC = 115°C TJ = –40°C to 150°C, RGREF = 1 kΩ V 800 V V 5.0 A 7.8 A 88 A f = 50 Hz 80 A Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 80 A 32 A2 • s di/dt IT = IT(RMS) × π, VD = VDRM × 0.5, f ≤ 60 Hz, tgw ≥ 10 μs, tgr ≤ 250 ns, igp ≥ 30 mA (refer to Gate Trigger Circuit diagram) 50 A/μs IT(RMS) Surge On-State Current ITSM TFA58x f = 60 Hz I2t Critical Rising Rate of On-State Current Units 700 1800 RMS On-State Current I2t Value for Fusing Rating Half cycle sine wave, single, non-repetitive Peak Forward Gate Current IFGM f ≥ 50 Hz, duty cycle ≤ 10% 2.0 A Peak Forward Gate Voltage VFGM f ≥ 50 Hz, duty cycle ≤ 10% 10 V Peak Reverse Gate Current VRGM f ≥ 50 Hz 5.0 V Peak Gate Power Dissipation PGM f ≥ 50 Hz, duty cycle ≤ 10% 5.0 W Average Gate Power Dissipation 0.5 W Junction Temperature PGM(AV) TJ TJ < TJ(max) –40 to 150 ºC Storage Temperature Tstg –40 to 150 ºC Thermal Characteristics May require derating at maximum conditions Characteristic Symbol Package Thermal Resistance (Junction to Case) RθJC Test Conditions Value Units 3.8 ºC/W For AC Pin-out Diagram A Terminal List Table G K 1 2 3 Number Name 1 A Anode terminal Function 2 K Cathode terminal 3 G Gate control All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature, TA, of 25°C, unless otherwise stated. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 TFA5x Series Reverse Blocking Triode Thyristor ELECTRICAL CHARACTERISTICS Characteristics Symbol Test Conditions Min. Typ. Max. Unit Off-State Leakage Current IDRM VD = VDRM, TJ = 150°C, RGREF = 1 kΩ – – 2.0 mA Reverse Leakage Current IRRM VD = VDRM, TJ = 150°C, RGREF = 1 kΩ – – 2.0 mA On-State Voltage VTM ITM = 15 A, TC = 25°C – – 1.5 V Gate Trigger Voltage VGT VD = 6 V, RL = 10 Ω, TC = 25°C – – 1.0 V Gate Trigger Current IGT VD = 6 V, RL = 10 Ω, TC = 25°C mA Gate Non-trigger Voltage VGD VD = VDRM × 0.5, RGREF = 1 kΩ, TJ = 125°C Holding Current IH Critical Rising Rate of Off-State Voltage dv/dt – 7 15 0.2 – – V RGREF = 1 kΩ, TJ = 25°C – 15 – mA VD = VDRM × 0.5, TJ = 125°C, RGREF = 1 kΩ, CGREF = 0.033 μF – 300 – V/μs Test Circuit 1 Voltage-Current Characteristic IF ITM A VTM (On state) RGREF G VRRM K VR CGREF IH IDRM IRRM (Off state) VTM Gate Trigger Current VF VDRM IR tgr igp tgw Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 3 TFA5x Series Reverse Blocking Triode Thyristor Commutation Timing Diagrams Q4 Supply VAC Q A A = Conduction angle VGT VGATE Q ITSM On-State Currrent Q Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 4 TFA5x Series Reverse Blocking Triode Thyristor Performance Characteristics at TA = 25°C 160 100 Half cycle sine wave initial TJ = 125°C A= 10 ms, f = 20 ms 140 TJ = 150°C 120 Surge On-State Current versus Quantity of Cycles 100 ITSM (A) Maximum On-State Current versus Maximum On-State Voltage IT (max) (A) 10 60 TJ = 25°C 1 80 40 20 0 0 0.6 1.0 1.4 1.8 2.2 2.6 VT (max) (V) 3.0 3.4 Half cycle sine wave 7 100 160 A = 120° 5 140 Maximum Allowable Case Temperature 120 versus Average 100 On-State Current TC (°C) A = 90° A = 60° 4 Half cycle sine wave 180 A = 180° 6 PT(AV) (W) 10 Quantity of Cycles 200 8 Maximum Average Power Dissipation versus Average On-State Current 1 A = 30° A = 30° 80 3 60 2 A = 60° A = 120° A = 90° A = 180° 40 1 0 20 0 1 2 3 4 IT(AV) (A) 5 6 0 7 0 1 2 3 4 5 IT(AV) (A) 6 7 8 2 100 IGM = 2 A PGM =5W VG (V) Gate Voltage versus Gate Current VGM = 10 V 1 VGT (–40°C) = 1.5 V VGT (25°C) =1V PG(AV) = 0.5 W IGT (–40°C) = 30 mA IGT (25°C) = 15 mA Typical Gate Trigger Voltage versus Junction Temperature at VD = 6 V and RL = 10 Ω VGT (V) 10 1 VGD (125°C)= 0.2 V 0.1 10 100 1000 0 –60 10 000 –20 20 IG (mA) 60 100 140 100 140 TJ (°C) 100 100 RGREF = 10 kΩ Typical Holding Current versus Junction Temperature at RGREF = 10 kΩ 1 0.1 –60 –20 20 60 100 140 TJ (°C) 10 IH (mA) 10 IGT (mA) Typical Gate Trigger Current versus Junction Temperature at VD = 6 V and RL = 10 Ω 1 0.1 –60 –20 20 60 TJ (°C) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 5 TFA5x Series Reverse Blocking Triode Thyristor Transient Thermal Impedence versus Voltage Pulse Duration For AC ZQJC (°C/W) 10 1 0.1 1 10 100 1000 10 000 100 000 QT (ms) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 6 TFA5x Series Reverse Blocking Triode Thyristor 4.0 –0.3 +0.2 TO-220F Package Outline Drawing 10.0 ±0.2 4.2 ±0.2 2.8 ±0.2 Ø3.3 ±0.2 16.9 ±0.3 8.4 ±0.2 0.5 ±0.1 × 45° 0.8 ±0.2 Branding Area XXXXXXXX XXXXX 2.6 ±0.1 2.2 ±0.2 1.35 ±0.15 1.35 ±0.15 +0.2 (13.5) +0.2 0.85 –0.1 3.9 ±0.2 0.45 –0.1 View A View B 2.54 ±0.1 Terminal dimension at lead tips 1 2 3 0.7 MAX View A Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and Pb-free solder dip Leadform: 600 Package: TO-220F (FM20) 0.7 MAX View B Branding codes (exact appearance at manufacturer discretion): 1st line, type: TFA5xx 2nd line, lot: YM Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) Dimensions in millimeters Leadframe plating Pb-free. Device meets RoHS requirements. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 7 TFA5x Series Reverse Blocking Triode Thyristor Packing Specification Tube Packing 530 7 35 540 110 172 50 pieces per tube 25 tubes per layer 3 layers per carton 3750 pieces per outer carton Dimensions in mm Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 8 TFA5x Series Reverse Blocking Triode Thyristor Bulk Packing 165 430 175 36 405 123 200 pieces per tray 5 trays per inner carton 4 inner cartons per outer carton 4000 pieces maximum per outer carton Dimensions in millimeters Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 9 TFA5x Series Reverse Blocking Triode Thyristor WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust on leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. • Coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink. • Volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reduced heat radiation effect, and possibly shortening the lifetime of the product. • Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials SC102 Dow Corning Toray Silicone Co., Ltd. Heatsink Mounting Method • Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product package type 0.490 to 0.686 N•m (5 to 7 kgf•cm). • Diameter of Heatsink Hole: < 4 mm. The deflection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect. Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260±5°C 10 s 350±5°C • 3s Soldering iron should be at a distance of at least 1.5 mm from the body of the products Electrostatic Discharge • When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance to ground to prevent shock hazard. • Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. • When using measuring equipment such as a curve tracer, the equipment should be grounded. • When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. • The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 10 TFA5x Series Reverse Blocking Triode Thyristor The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Anti radioactive ray design is not considered for the products listed herein. Copyright © 2008-2009 Allegro MicroSystems, Inc. This datasheet is based on Sanken datasheet SSE-24047 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 11 TFA5x Series Reverse Blocking Triode Thyristor Worldwide Contacts Asia-Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026, Ocean Centre Canton Road, Tsimshatsui Kowloon, Hong Kong Tel: 852-2735-5262, Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room 3202, Maxdo Centre Xingyi Road 8, Changning District Shanghai, China Tel: 86-21-5208-1177, Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor 88 Jung Shiau East Road, Sec. 2 Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161, Fax: 886-2-2356-8261 Japan Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building 1-11-1 Nishi-Ikebukuro, Toshima-ku Tokyo 171-0021, Japan Tel: 81-3-3986-6164, Fax: 81-3-3986-8637 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West Singapore 189720 Tel: 65-6291-4755, Fax: 65-6297-1744 Europe Sanken Power Systems (UK) Limited Pencoed Technology Park Pencoed, Bridgend CF35 5HY, United Kingdom Tel: 44-1656-869-100, Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000, Fax: 1-508-853-7895 Allegro MicroSystems, Inc. 14 Hughes Street, Suite B105 Irvine, California 92618, U.S.A. Tel: 1-949-460-2003, Fax: 1-949-460-7837 Korea Sanken Electric Korea Co., Ltd. Samsung Life Yeouido Building 16F 23-10, Yeouido-Dong, Yeongdeungpo-gu Seoul 150-734, Korea Tel: 82-2-714-3700, Fax: 82-2-3272-2145 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 12