TLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP620−4 Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. The TLP620−2 offers two isolated channels in an eight lead plastic DIP, while the TLP620−4 provides four isolated channels in a sixteen plastic DIP. • Collector−emitter voltage: 55V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) TOSHIBA 11−5B2 Weight: 0.26 g Pin Configurations (top view) TLP620 TLP620-2 TLP620-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 1 : ANODE CATHODE 2 : CATHODE ANODE 3 : EMITTER 4 : COLLECTOR TOSHIBA 4 5 1, 3 : ANODE CATHODE 2, 4 : CATHODE ANODE 5, 7 : EMITTER 6, 8 : COLLECTOR 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 4 13 5 12 6 11 7 10 8 9 11−10C4 Weight: 0.54 g : ANODE, CATHODE : CATHODE, ANODE : EMITTER : COLLECTOR TOSHIBA 11−20A3 Weight: 1.1 g 1 2007-10-01 TLP620,TLP620−2,TLP620−4 Made In Japan • • Made In Thailand UL recognized E67349 *1 E152349 *1 BSI approved 7426, 7427 *2 7426, 7427 *2 *1 UL1577 *2 BS EN60065: 2002, BS EN60950-1: 2002 Isolation voltage: 5000Vrms (min.) Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no.40009302 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note) When an EN 60747-5-2 approved type is needed, please designate the “Option(D4)”. • Creepage distance: 6.4mm (min.) Clearance: 6.4mm (min.) Insulation thickness: 0.4mm (min.) Absolute Maximum Ratings (Ta = 25°C) Rating LED Characteristic TLP620 TLP620−2 TLP620−4 Unit Forward current IF (RMS) 60 50 mA Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP Power dissipation (1 circuit) PD 100 70 mW Power dissipation derating ΔPD / °C −1.0 −0.7 mW / °C Junction temperature Detector Symbol 1 (100μs pulse, 100pps) A Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC / °C −1.5 −1.0 mW / °C Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsold 260 (10s) °C Total package power dissipation PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.5 −1.5 mW / °C Isolation voltage BVS 5000 (AC, 1 min., RH ≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-10-01 TLP620,TLP620−2,TLP620−4 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF (RMS) ― 16 20 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Forward current IF VF = ±0.7V ― 2.5 20 μA Capacitance CT V = 0, f = 1MHz ― 60 ― pF Collector−emitter breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V Emitter−collector breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA VCE = 24V, Ta = 85°C ― 2 50 μA VCE = 0, f = 1MHz ― 10 ― pF MIn. Typ. Max. Unit 50 ― 600 100 ― 600 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Off−state collector current CTR symmetry Symbol IC / IF IC / IF (sat) VCE (sat) IC (off) IC (ratio) Test Condition IF = ±5mA, VCE = 5V Rank GB % IF = ±1mA, VCE = 0.4V Rank GB ― 60 ― 30 ― ― IC = 2.4mA, IF = ±8mA ― ― 0.4 IC = 0.2 mA, IF = ±1 mA Rank GB ― 0.2 ― ― ― 0.4 VF = ± 0.7V, VCE = 24V ― 1 10 μA 0.33 1 3 ― IC (IF = −5mA) / IC (IF = +5mA) 3 % V 2007-10-01 TLP620,TLP620−2,TLP620−4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance input to output CS VS = 0, f = 1MHz Isolation resistance RS VS = 500V BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 1×10 AC, 1 minute Isolation voltage Min. 12 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 15 ― ― 25 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10V IC = 2mA RL = 100Ω RL = 1.9kΩ VCC = 5V, IF = ±16mA (Fig.1) μs μs Fig. 1 Switching time test circuit IF IF VCC RL tS VCE VCE tON 4 VCC 4.5V 0.5V tOFF 2007-10-01 TLP620,TLP620−2,TLP620−4 TLP620-2 TLP620-4 IF – Ta 100 100 80 80 Allowable forward current IF (RMS) (mA) Allowable forward current IF (RMS) (mA) TLP620 60 40 20 0 −20 0 20 40 60 Ambient temperature Ta 100 60 40 20 0 −20 120 (°C) 0 20 40 TLP620-2 TLP620-4 120 200 100 Allowable collector power dissipation PC (mW) 240 160 120 80 40 80 Ta 100 120 (°C) PC – Ta 80 60 40 20 0 −20 0 20 40 60 Ambient temperature TLP620 80 Ta 100 0 −20 120 0 20 40 TLP620-2 TLP620-4 Pulse width≦100μs Allowable pulse forward current IFP (mA) 500 300 100 50 30 3 − 10 2 3 Duty cycle ratio − 10 1 Ta 100 120 (°C) Pulse width≦100μs Ta = 25°C 1000 − 10 3 80 IFP – DR 3000 Ta = 25°C 10 3 60 Ambient temperature (°C) IFP – DR 3000 Allowable pulse forward current IFP (mA) 60 Ambient temperature PC – Ta TLP620 Allowable collector power dissipation PC (mW) 80 IF – Ta 3 1000 500 300 100 50 30 10 100 3 − 10 3 3 − 10 2 3 Duty cycle ratio DR 5 − 10 1 3 100 DR 2007-10-01 TLP620,TLP620−2,TLP620−4 IF – V F 100 ΔVF / ΔTa – IF Ta = 25°C Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) Forward current IF (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.4 0.6 1.0 0.8 1.2 Forward voltage VF 1.4 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 1.6 1 0.3 (V) Forward current IFP – VFP ID (μA) Ta = 25°C 10 5 VCE = 24V 100 100 Collector dark current IFP (mA) Pulse forward current (mA) 101 Pulse width≦10μs 500 Repetitive 300 Frequency = 100Hz 50 30 10 5 3 1 0 0.4 1.2 0.8 1.6 Pulse forward voltage 2.0 VFP − 10 1 − 10 2 − 10 3 − 10 4 0 2.4 (V) 40 Ambient temperature IC (mA) Collector current 20mA 15mA PC (MAX.) 10mA 20 IF = 5mA 2 4 8 6 Collector-emitter voltage (°C) Ta = 25°C 30mA 0 0 Ta Ta = 25°C 50mA 160 IC – VCE 60 40 120 80 IC – VCE 80 IC (mA) IF 30 ID – Ta 1000 Collector current 10 3 VCE 40mA 20 30mA 20mA 15 10mA 10 5mA 5 0 0 10 50mA 25 IF = 2mA 0.2 0.4 0.6 0.8 Collector-emitter voltage (V) 6 1.0 VCE 1.2 1.4 (V) 2007-10-01 TLP620,TLP620−2,TLP620−4 VF – IF IC – V F 60 100 (mA) IC Collector current (mA) 20 Forward voltage 40 IF Ta = 25°C 0 −20 −40 Ta = 25°C 10 50 30 5 10 VCE = 0.4V 5 3 1 0.5 0.3 0.1 0.05 −3 −2 −1 0 Forward voltage 1 VF 2 0.03 3 0.01 (V) 1.0 0.9 0.8 Forward voltage 1.2 1.1 VF 1.3 (V) IC – IF Ta = 25°C 50 VCE = 5V VCE = 0.4V 30 10 IC / IF – IF 500 5 3 300 Sample A Sample A Current transfer ratio IC / IF (%) Collector current IC (mA) 100 Sample B 1 0.5 0.3 0.1 50 Sample B 30 Ta = 25°C VCE = 5V VCE = 0.4V 10 0.05 0.03 0.3 100 1 3 Forward current 10 IF 30 5 0.3 100 1 3 Forward current (mA) 7 10 IF 30 100 (mA) 2007-10-01 TLP620,TLP620−2,TLP620−4 IC – Ta VCE (sat) – Ta 100 IF = 25mA 0.24 VCE = 5V IF = 5mA IC = 1mA Collector-emitter saturation voltage VCE (sat) (V) 30 10 5 10 5 3 1 1 0.5 0.20 0.16 0.12 0.08 0.04 0 0.5 0.3 0.1 −20 0 40 20 −20 0 20 40 Ambient temperature 60 Ta 80 (°C) RL – Switching ton, toff, ts Test condition 500 (μs) VCC IF RL 4.5V 5V VCE 0.5V VCE RBE (°C) 100 1000 IF Ta 100 80 60 Ambient temperature Switching time Collector current IC (mA) 50 ts tON Time Ta = 25°C IF = 16mA VCC = 5V 300 tOFF 100 50 ts 30 tOFF 10 5 3 1 1 tON 3 10 Load resistance 8 30 RL 100 (kΩ) 2007-10-01 TLP620,TLP620−2,TLP620−4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01