TOSHIBA TLP124

TLP124
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP124
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
Unit in mm
The TOSHIBA mini flat coupler TLP124 is a small outline coupler,
suitable for surface mount assembly.
TLP124 consists of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
·
Collector−emitter voltage: 80 V min.
·
Current transfer ratio: 100% min.
Rank BV: 200% min.
·
Isolation voltage: 3750Vrms min.
·
UL recognized: UL1577, file No. E67349
TOSHIBA
Weight: 0.09g
11−4C1
Pin Configurations (top view)
1
6
3
4
1 : Anode
3 : Cathode
4 : Emitter
6 : Collector
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2002-09-25
TLP124
Current Transfer Ratio
Classification
Current Transfer Ratio (min.)
Ta = 25°C
Ta = -25~75°C
IF = 0.5mA
IF = 1mA
IF = 1mA
VCE = 0.5V
VCE = 1.5V
VCE = 0.5V
Marking Of
Classification
Rank BV
200%
100%
100%
BV
Standard
100%
50%
50%
BV, Blank
(Note) Application type name for certification test, please use standard product type name, i. e.
TLP124 (BV): TLP124
Maximum Rations (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF / °C
-0.7 (Ta ≥ 53°C)
mA / °C
Peak forward current
(100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector-emitter voltage
VCEO
80
V
Emitter-collector valtage
VECO
7
V
Collector current
IC
50
mA
Peak collector current
(10ms pulse, 100pps)
ICP
100
mA
Power dissipation
PC
150
mW
∆PC / °C
-1.5
mA / °C
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
200
mW
Total package power dissipation
derating (Ta ≥ 25°C)
∆PT / °C
-2.0
mW / °C
BVS
3750
Vrms
Forward current
Detector
LED
Forward current derating
Power dissipation derating
(Ta ≥ 25°C)
Junction temperature
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
(Note 1)
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
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2002-09-25
TLP124
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
5
48
V
Forward current
IF
―
1.6
20
mA
Collector current
IC
―
1
10
mA
Topr
-25
―
75
°C
Operating temperature
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse Current
IR
VR = 5 V
―
―
10
µA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector-emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
―
―
V
Emitter-collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
―
―
V
VCE = 48 V
―
10
100
nA
VCE = 48 V, Ta = 85°C
―
2
50
µA
V = 0, f = 1 MHz
―
12
―
pF
MIn.
Typ.
Max.
Unit
IF = 1mA, VCE = 0.5 V
Rank BV
100
―
1200
200
―
1200
IF = 0.5 mA, VCE = 1.5 V
Rank BV
50
―
―
100
―
―
IC = 0.5 mA, IF = 1 mA
―
―
0.4
IC = 1 mA, IF = 1 mA
Rank BV
―
0.2
―
―
―
0.4
VF = 0.7V, VCE = 48 V
―
―
10
µA
Min.
Typ.
Max.
Unit
50
―
―
%
100
―
―
%
―
50
―
%
―
100
―
%
Collector dark current
Capacitance collector to emitter
ID
CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Collector-emitter
saturation voltage
Off-state collector current
Symbol
IC / IF
IC / IF (low)
VCE (sat)
IC(off)
Test Condition
%
%
V
Coupled Electrical Characteristics (Ta = -25~75°C)
Characteristic
Current transfer ratio
Low input CTR
Symbol
IC / IF
IC / IF (low)
Test Condition
IF = 1mA, VCE = 0.5 V
Rank BV
IF = 0.5 mA, VCE = 1.5 V
Rank BV
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2002-09-25
TLP124
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
―
0.8
―
pF
5×1010
1014
―
Ω
AC, 1 minute
3750
—
―
AC, 1 s, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Vdc
Min.
Typ.
Max.
Unit
―
8
―
―
8
―
―
10
―
―
8
―
―
10
―
―
50
―
―
300
―
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
Isolation voltage
BVS
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn-on time
tON
Turn-off time
tOFF
Turn-on time
tON
Storage time
ts
Turn-off time
tOFF
Test Condition
VCC = 10 V, IC = 2 mA
RL = 100Ω
RL = 4.7 kΩ
VCC = 5 V, IF = 1.6 mA
(Fig.1)
µs
µs
Fig. 1 Switching time test circuit
IF
IF
VCC
ts
RL
VCE
VCE
tON
4
VCC
4.5V
0.5V
tOFF
2002-09-25
TLP124
IF – Ta
PC – Ta
200
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
100
80
60
40
20
0
-20
0
40
20
60
80
100
160
120
80
40
0
-20
120
0
40
20
Pulse width ≦ 100ms
Forward current
Pulse forward current
300
100
50
30
10-3
10-2
3
10-1
3
Ta = 25°C
50
Ta = 25°C
500
10
3
100
3
Duty cycle ratio DR
30
10
5
3
1
0.5
0.3
0.1
0.6
0.8
1.0
1.2
Forward voltage
1.6
1.4
1.8
VF (V)
IFP – VFP
-2.8
(mA)
-2.4
IFP
1000
-2.0
Pulse forward current
Forward voltage temperature
coefficient DVF / DTa (mV / °C)
DVF / DTa – IF
-3.2
-1.6
-1.2
-0.8
-0.4
0.1
120
IF – VF
100
IF (mA)
IFP (mA)
IFP – DR
1000
100
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
3000
60
0.3 0.5
1
3
Forward current
5
10
30
500
300
100
50
30
10
IF (mA)
Repetitive
3
1
0.6
50
Pulse width ≦ 10ms
5
Frequency = 100Hz
Ta = 25°C
1.0
1.4
1.8
2.2
Pulse forward voltage VFP
5
2.6
3.0
(V)
2002-09-25
TLP124
IC – VCE
4
IC – VCE
4
Ta = 25°C
IC (mA)
3
0.8mA
Collector current
Collector current IC
(mA)
IF = 1.0mA
2
0.6mA
0.5mA
1
0.4mA
Ta = 25°C
IF = 1.0mA
3
0.8mA
2
0.6mA
0.5mA
1
0.4mA
0.2mA
0
0
2
6
4
0.2mA
8
0
0
10
0.2
0.6
0.4
0.8
1.0
Collector–emitter voltage VCE (V)
Collector–emitter voltage VCE (V)
IC – IF
ICEO – Ta
101
50
10
5
10
0
(mA)
3
Sample A
VCE = 48V
1
Collector dark current ICEO
Collector current IC (mA)
30
0.5
Ta = 25°C
0.3
Sample B
VCE = 5V
VCE = 1.5V
0.1
VCE = 0.5V
0.05
0.03
0.1
0.3
0.5
1
Forward current
3
5
10
IF (mA)
1000
10V
10-1
5V
10-2
10-3
10-4
0
IC / IF – IF
24V
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ta = 25°C
Current transfer ratio
IC / IF (%)
500
SamplE A
300
Sample B
100
VCE = 5V
VCE = 1.5V
VCE = 0.5V
50
30
0.1
0.3
0.5
1
Forward current
3
5
10
IF (mA)
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TLP124
IC – Ta
VCE(sat) – Ta
30
0.14
VCE = 1.5V
VCE = 0.5V
IF = 2mA
10
(mA)
0.10
0.08
Collector current IC
Collector–emitter saturation
voltage VCE(sat) (mV)
0.12
0.06
0.04
IF = 1mA
Ic = 0.5mA
0.02
0
-40
-20
20
0
40
60
80
100
5
1mA
3
0.5mA
1
0.5
0.3
0.2mA
0.1
Ambient temperature Ta (℃)
0.05
-20
0
20
40
60
80
100
Ambient temperature Ta (℃)
Switching Time – RL
5000
3000
Ta = 25°C
IF = 1.6mA
VCC = 5V
tOFF
Switching time (ms)
1000
500
300
ts
100
50
30
tON
10
5
1
3
5
10
Load resistance RL
30
50
100
(kW)
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2002-09-25
TLP124
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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