TI TPA102DGNR

TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
D
D
D
D
D
D
D
DGN PACKAGE
(TOP VIEW)
150 mW Stereo Output
PC Power Supply Compatible
– Fully Specified for 3.3 V and 5 V
Operation
– Operation to 2.5 V
Pop Reduction Circuitry
Internal Mid-Rail Generation
Thermal and Short-Circuit Protection
Surface-Mount Packaging
– PowerPAD MSOP
Pin Compatible With LM4881
BYPASS
GND
SHUTDOWN
IN2–
1
8
2
7
3
6
4
5
IN1–
VO 1
VDD
VO 2
description
The TPA102 is a stereo audio power amplifier packaged in an 8-pin PowerPAD MSOP package capable of
delivering 150 mW of continuous RMS power per channel into 8-Ω loads. Amplifier gain is externally configured
by means of two resistors per input channel and does not require external compensation for settings of 1 to 10.
THD+N when driving an 8-Ω load from 5 V is 0.1% at 1 kHz, and less than 2% across the audio band of 20 Hz
to 20 kHz. For 32-Ω loads, the THD+N is reduced to less than 0.06% at 1 kHz, and is less than 1% across the
audio band of 20 Hz to 20 kHz. For 10-kΩ loads, the THD+N performance is 0.01% at 1 kHz, and less than 0.02%
across the audio band of 20 Hz to 20 kHz.
typical application circuit
325 kΩ
325 kΩ
VDD 6
VDD
RF
CS
VDD/2
Audio
Input
RI
8
IN 1–
1
BYPASS
4
IN 2–
CI
–
+
VO1 7
–
+
VO2 5
CC
CB
Audio
Input
RI
CI
From Shutdown
Control Circuit
3
SHUTDOWN
CC
Bias
Control
2
RF
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
Copyright  2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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• DALLAS, TEXAS 75265
1
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
AVAILABLE OPTIONS
PACKAGED DEVICE
MSOP†
TA
MSOP
Symbolization
– 40°C to 85°C
TPA102DGN
TI AAC
† The DGN package is available in left-ended tape and reel only (e.g.,
TPA102DGNR).
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BYPASS
1
I
Tap to voltage divider for internal mid-supply bias supply. Connect to a 0.1 µF to 1 µF low ESR capacitor for
best performance.
GND
2
I
GND is the ground connection.
IN1–
8
I
IN1– is the inverting input for channel 1.
IN2–
4
I
IN2– is the inverting input for channel 2.
SHUTDOWN
3
I
Puts the device in a low quiescent current mode when held high.
VDD
VO1
6
I
7
O
VDD is the supply voltage terminal.
VO1 is the audio output for channel 1.
VO2
5
O
VO2 is the audio output for channel 2.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . internally limited
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
DGN
2.14 W‡
17.1 mW/°C
1.37 W
1.11 W
‡ Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled Texas Instruments Recommended
Board for PowerPAD on page 33 of the before mentioned document.
recommended operating conditions
MIN
MAX
Supply voltage, VDD
2.5
5.5
V
Operating free-air temperature, TA
–40
85
°C
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
UNIT
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
dc electrical characteristics at TA = 25°C, VDD = 3.3 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
5
UNIT
VIO
PSRR
Input offset voltage
IDD
IDD(SD)
Supply current
1.5
3
mA
Supply current in SHUTDOWN mode
10
50
µA
ZI
Input impedance
>1
Power supply rejection ratio
VDD = 3.2 V to 3.4 V
83
mV
dB
MΩ
ac operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 8 Ω
PARAMETER
TEST CONDITIONS
PO
THD+N
Output power (each channel)
THD ≤ 0.1%
Total harmonic distortion + noise
BOM
Maximum output power BW
PO = 70 mW,
G = 10,
Phase margin
Open loop
Supply ripple rejection ratio
f = 1 kHz
Channel/channel output separation
f = 1 kHz
Signal-to-noise ratio
PO = 100 mW
SNR
MIN
TYP
70†
20–20 kHz
2%
THD <5%
>20
MAX
UNIT
mW
kHz
58°
Vn
Noise output voltage
† Measured at 1 kHz
68
dB
86
dB
100
dB
9.5
µV(rms)
dc electrical characteristics at TA = 25°C, VDD = 5 V
PARAMETER
VIO
PSRR
Input offset voltage
IDD
IDD(SD)
Supply current
ZI
TEST CONDITIONS
MIN
TYP
MAX
UNIT
5
mV
1.5
3
mA
Supply current in SHUTDOWN mode
60
100
µA
Input impedance
>1
Power supply rejection ratio
VDD = 4.9 V to 5.1 V
76
dB
MΩ
ac operating characteristics, VDD = 5 V, TA = 25°C, RL = 8 Ω
PARAMETER
TEST CONDITIONS
MIN
TYP
70†
MAX
UNIT
PO
THD+N
Output power (each channel)
THD ≤ 0.1%
Total harmonic distortion + noise
BOM
Maximum output power BW
PO = 150 mW, 20–20 kHz
G = 10,
THD <5%
>20
Phase margin
Open loop
56°
Supply ripple rejection ratio
f = 1 kHz
68
dB
Channel/Channel output separation
f = 1 kHz
86
dB
Signal-to-noise ratio
PO = 150 mW
100
dB
9.5
µV(rms)
SNR
Vn
Noise output voltage
† Measured at 1 kHz
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mW
2%
kHz
3
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
ac operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 32 Ω
PARAMETER
TEST CONDITIONS
PO
THD+N
Output power (each channel)
THD ≤ 0.1%
Total harmonic distortion + noise
BOM
Maximum output power BW
PO = 30 mW,
AV = 10,
Phase margin
Open loop
Supply ripple rejection ratio
f = 1 kHz
Channel/channel output separation
f = 1 kHz
Signal-to-noise ratio
PO = 100 mW
SNR
MIN
TYP
40†
20–20 kHz
0.5%
THD <2%
>20
MAX
UNIT
mW
kHz
58°
Vn
Noise output voltage
† Measured at 1 kHz
68
dB
97
dB
100
dB
9.5
µV(rms)
ac operating characteristics, VDD = 5 V, TA = 25°C, RL = 32 Ω
PARAMETER
TEST CONDITIONS
MIN
TYP
40†
MAX
UNIT
PO
THD+N
Output power (each channel)
THD ≤ 0.1%
Total harmonic distortion + noise
BOM
Maximum output power BW
PO = 60 mW,
AV = 10,
Phase margin
Open loop
Supply ripple rejection ratio
f = 1 kHz
68
dB
Channel/channel output separation
f = 1 kHz
97
dB
Signal-to-noise ratio
PO = 150 mW
SNR
20–20 kHz
0.4%
THD <2%
>20
Vn
Noise output voltage
† Measured at 1 kHz
mW
kHz
56°
100
dB
9.5
µV(rms)
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
THD+N
Total harmonic distortion plus noise
vs Frequency
vs Power output
Vn
1, 2, 4, 5, 7, 8,
10, 11, 13, 14,
16, 17, 34, 36
3, 6, 9,
12, 15, 18
Power supply rejection ratio
vs Frequency
Output noise voltage
vs Frequency
21, 22
Crosstalk
vs Frequency
23–26, 37, 38
Mute attenuation
vs Frequency
27, 28
vs Frequency
29 30
29,
Open-loop gain
Phase margin
19, 20
Output power
vs Load resistance
31, 32
IDD
Supply current
vs Supply voltage
33
SNR
Signal-to-noise ratio
vs Voltage gain
35
Closed-loop gain
Phase
Power dissipation
4
POST OFFICE BOX 655303
vs Frequency
39 44
39–44
vs Output power
45, 46
• DALLAS, TEXAS 75265
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
VDD = 3.3 V
PO = 30 mW
CB = 1 µ F
RL = 32 Ω
1
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
AV = –5 V/V
AV =– 10 V/V
0.1
AV = –1 V/V
0.01
0.001
20
100
1k
1
VDD = 3.3 V
AV = –1 V/V
RL = 32 Ω
CB = 1 µ F
PO = 15 mW
0.1
PO = 10 mW
0.01
PO = 30 mW
0.001
20
10k 20k
100
f – Frequency – Hz
10k 20k
f – Frequency – Hz
Figure 1
Figure 2
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
10
VDD = 3.3 V
RL = 32 Ω
AV = –1 V/V
CB = 1 µF
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
1k
20 kHz
10 kHz
1
0.1
1 kHz
20 Hz
0.01
1
10
50
1
VDD = 5 V
PO = 60 mW
RL = 32 Ω
CB = 1 µF
AV = –10 V/V
0.1
AV = –5 V/V
0.01
AV = –1 V/V
0.001
20
PO – Output Power – mW
100
1k
10k 20k
f – Frequency – Hz
Figure 3
Figure 4
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• DALLAS, TEXAS 75265
5
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
10
1
0.1
VDD = 5 V
RL = 32 Ω
AV = –1 V/V
CB = 1 µF
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
PO = 30 mW
PO = 15 mW
0.01
PO = 60 mW
0.001
20
100
1k
VDD = 5 V
AV = –1 V/V
RL = 32 Ω
CB = 1 µF
20 kHz
1
10 kHz
0.1
1 kHz
20 Hz
0.01
0.002
10k 20k
0.01
Figure 5
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
VDD = 3.3 V
RL = 10 kΩ
PO = 100 µF
CB = 1 µF
AV = –5 V/V
0.01
AV = –2 V/V
0.001
20
100
1k
10k 20k
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
0.1
1
VDD = 3.3 V
RL = 10 kΩ
AV = –1 V/V
CB = 1 µF
0.1
PO = 45 µW
0.01
0.001
20
100
1k
f – Frequency – Hz
Figure 7
Figure 8
POST OFFICE BOX 655303
PO = 90 µW
PO = 130 µW
f – Frequency – Hz
6
0.2
Figure 6
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
1
0.1
PO – Output Power – W
f – Frequency – Hz
• DALLAS, TEXAS 75265
10k 20k
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
10
VDD = 3.3 V
RL = 10 kΩ
AV = –1 V/V
CB = 1 µF
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
1
0.1
20 Hz
10 kHz
0.01
20 Hz
1 kHz
0.001
5
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
100
1
VDD = 5 V
RL = 10 kΩ
PO = 300 µW
CB = 1 µF
0.1
AV = –5 V/V
AV = –1 V/V
0.01
AV = –2 V/V
0.001
20
200
PO – Output Power – µW
100
Figure 10
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
10
VDD = 5 V
RL = 10 kΩ
AV = –1 V/V
CB = 1 µF
PO = 300 µW
0.1
PO = 200 µW
0.01
PO = 100 µW
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
0.001
20
10k 20k
f – Frequency – Hz
Figure 9
1
1k
VDD = 5 V
RL = 10 kΩ
AV = –1 V/V
CB = 1 µ F
1
0.1
20 Hz
20 kHz
0.01
10 kHz 1 kHz
0.001
100
1k
10k 20k
5
10
100
500
PO – Output Power – µW
f – Frequency – Hz
Figure 11
Figure 12
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
2
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 3.3 V
PO = 75 mW
RL = 8 Ω
CB = 1 µF
1
10
AV = –5 V/V
AV = –2 V/V
0.1
AV = –1 V/V
0.01
0.001
100
20
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
THD+N –Total Harmonic Distortion + Noise – %
THD+N – Total Harmonic Distortion Plus Noise – %
TYPICAL CHARACTERISTICS
1k
VDD = 3.3 V
RL = 8 Ω
AV = –1 V/V
PO = 30 mW
1
PO = 15 mW
0.1
0.01
PO = 75 mW
0.001
20
10k 20k
f – Frequency – Hz
100
1k
10k 20k
f – Frequency – Hz
Figure 13
Figure 14
THD+N – Total Harmonic Distortion Plus Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
THD+N –Total Harmonic Distortion + Noise – %
10
VDD = 3.3 V
RL = 8 Ω
AV = –1 V/V
20 kHz
10 kHz
1
1 kHz
0.1
20 Hz
0.01
10m
0.1
0.3
2
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 5 V
PO = 100 mW
RL = 8 Ω
CB = 1 µF
1
AV = –5 V/V
0.1
AV = –1 V/V
0.01
0.001
20
100
1k
f – Frequency – Hz
PO – Output Power – W
Figure 15
8
AV = –2 V/V
Figure 16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
10k 20k
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
POWER OUTPUT
10
THD+N –Total Harmonic Distortion + Noise – %
THD+N –Total Harmonic Distortion + Noise – %
10
VDD = 5 V
RL = 8 Ω
AV = –1 V/V
PO = 30 mW
1
0.1
PO = 60 mW
0.01
PO = 10 mW
0.001
20
100
1k
VDD = 5 V
RL = 8 Ω
AV = –1 V/V
20 kHz
1
10 kHz
20 Hz
0.01
10m
10k 20k
0.1
f – Frequency – Hz
Figure 18
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
0
CB = 0.1 µF
–30
CB = 1 µF
–40
–50
–60
CB = 2 µF
–70
Bypass = 1.65 V
–20
–50
–60
–90
10k 20k
CB = 2 µF
–70
–90
1k
CB = 1 µF
–40
–80
100
CB = 0.1 µF
–30
–80
–100
20
VDD = 5 V
RL = 8 Ω to 10 kΩ
–10
Supply Ripple Rejection – dB
Supply Ripple Rejection – dB
0
VDD = 3.3 V
RL = 8 Ω to 10 kΩ
–20
1
PO – Output Power – W
Figure 17
–10
1 kHz
0.1
–100
20
f – Frequency – Hz
Bypass = 2.5 V
100
1k
10k 20k
f – Frequency – Hz
Figure 19
Figure 20
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• DALLAS, TEXAS 75265
9
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
OUTPUT NOISE VOLTAGE
vs
FREQUENCY
OUTPUT NOISE VOLTAGE
vs
FREQUENCY
20
Vn – Output Noise Voltage – µV(rms)
Vn – Output Noise Voltage – µV(rms)
20
10
VDD = 3.3 V
BW = 10 Hz to 22 kHz
AV = –1 V/V
RL = 8 Ω to 10 kΩ
1
20
100
1k
10
VDD = 5 V
BW = 10 Hz to 22 kHz
RL = 8 Ω to 10 kΩ
AV = –1 V/V
1
20
10k 20k
100
f – Frequency – Hz
Figure 22
CROSSTALK
vs
FREQUENCY
CROSSTALK
vs
FREQUENCY
–60
Crosstalk – dB
–75
–50
PO = 25 mW
VDD = 3.3 V
RL = 32 Ω
CB = 1 µF
AV = –1 V/V
–60
–65
–80
IN 2 TO OUT 1
–85
–90
–95
–70
–75
IN 2 TO OUT 1
–80
–85
–100
IN 1 TO OUT 2
–105
–110
20
PO = 100 mW
VDD = 3.3 V
RL = 8 Ω
CB = 1 µF
AV = –1 V/V
–55
Crosstalk – dB
–70
IN 1 TO OUT 2
–90
–95
100
1k
10k 20k
–100
20
f – Frequency – Hz
100
1k
f – Frequency – Hz
Figure 23
10
10k 20k
f – Frequency – Hz
Figure 21
–65
1k
Figure 24
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
10k 20k
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CROSSTALK
vs
FREQUENCY
CROSSTALK
vs
FREQUENCY
–60
–50
VDD = 5 V
PO = 25 mW
CB = 1 µF
RL = 32 Ω
AV = –1 V/V
–65
–65
–60
–65
Crosstalk – dB
Crosstalk – dB
–75
–55
–80
–85
IN 2 TO OUT 1
–90
–95
VDD = 5 V
PO = 100 mW
CB = 1 µF
RL = 8 Ω
AV = –1 V/V
–70
IN 2 TO OUT 1
–75
–80
–85
–100
–90
IN 1 TO OUT 2
IN 1 TO OUT 2
–105
–95
–110
20
100
1k
–100
20
10k 20k
100
f – Frequency – Hz
Figure 25
MUTE ATTENUATION
vs
FREQUENCY
0
0
VDD = 3.3 V
RL = 32 Ω
CB = 1 µF
–10
–20
–30
Mute Attenuation – dB
Mute Attenuation – dB
–20
–40
–50
–60
–70
–40
–50
–60
–70
–80
–90
–90
100
1k
10k 20k
VDD = 5 V
CB = 1 µF
RL = 32 Ω
–30
–80
–100
20
10k 20k
Figure 26
MUTE ATTENUATION
vs
FREQUENCY
–10
1k
f – Frequency – Hz
–100
20
100
1k
f – Frequency – Hz
f – Frequency – Hz
Figure 27
Figure 28
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10k 20k
11
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
OPEN–LOOP GAIN AND PHASE MARGIN
vs
FREQUENCY
150°
100
VDD = 3.3 V
No Load
Open-Loop Gain – dB
Phase
60
φ m – Phase Margin
120°
80
90°
40
60°
Gain
20
30°
0
0°
–20
10
100
1k
10k
100k
–30°
10M
f – Frequency – Hz
Figure 29
OPEN–LOOP GAIN AND PHASE MARGIN
vs
FREQUENCY
100
150°
VDD = 5 V
No Load
Open-Loop Gain – dB
Phase
60
40
60°
Gain
20
30°
0
0°
–20
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 30
12
90°
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
φ m – Phase Margin
120°
80
–30°
10M
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
LOAD RESISTANCE
OUTPUT POWER
vs
LOAD RESISTANCE
120
300
THD+N = 1 %
VDD = 3.3 V
AV = –1 V/V
250
PO – Output Power – mW
PO – Output Power – mW
100
THD+N = 1 %
VDD = 5 V
AV = –1 V/V
80
60
40
20
200
150
100
50
0
8
24
16
40
32
48
56
0
64
8
16
RL – Load Resistance – Ω
24
THD+N – Total Harmonic Distortion Plus Noise – %
1.4
I DD – Supply Current – mA
1.2
1
0.8
0.6
0.4
0.2
3
3.5
4
48
56
64
Figure 32
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
2.5
40
RL – Load Resistance – Ω
Figure 31
0
32
5
4.5
5.5
1
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VI = 1 V
AV = –1 V/V
RL = 10 kΩ
CB = 1 µF
0.1
0.01
0.001
20
100
1k
10k 20k
f – Frequency – Hz
VDD – Supply Voltage – V
Figure 33
Figure 34
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13
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
104
THD+N – Total Harmonic Distortion Plus Noise – %
SIGNAL-TO-NOISE RATIO
vs
VOLTAGE GAIN
SNR – Signal–to-Noise Ratio – dB
VI = 1 V
102
100
98
96
94
92
1
2
3
4
5
6
7
8
9
10
1
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 5 V
AV = –1 V/V
RL = 10 kΩ
CB = 1 µF
0.1
0.01
0.001
20
100
AV – Voltage Gain – V/V
Figure 35
VDD = 3.3 V
VO = 1 V
RL = 10 kΩ
CB = 1 µF
–80
VDD = 5 V
VO = 1 V
RL = 10 kΩ
CB = 1 µF
–70
–80
–90
Crosstalk – dB
Crosstalk – dB
CROSSTALK
vs
FREQUENCY
–60
–70
–100
IN2 to OUT1
–110
–120
–90
–100
IN2 to OUT1
–110
–120
–130
–130
IN1 to OUT2
–140
IN1 to OUT2
–140
–150
20
100
1k
10k 20k
–150
20
f – Frequency – Hz
100
1k
f – Frequency – Hz
Figure 37
14
10k 20k
Figure 36
CROSSTALK
vs
FREQUENCY
–60
1k
f – Frequency – Hz
Figure 38
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10k 20k
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
180°
Phase
140°
Phase
160°
Closed-Loop Gain – d B
120°
VDD = 3.3 V
RI = 20 kΩ
RF = 20 kΩ
RL = 32 Ω
CI = 1 µF
AV = –1 V/V
30
20
10
100°
80°
Gain
0
–10
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 39
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
180°
160°
140°
Phase
Phase
Closed-Loop Gain – dB
120°
VDD = 5 V
RI = 20 kΩ
RF = 20 kΩ
RL = 32 Ω
CI = 1 µF
AV = –1 V/V
30
20
10
100°
80°
Gain
0
–10
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 40
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15
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
180°
Phase
140°
Phase
160°
Closed-Loop Gain – dB
120°
VDD = 3.3 V
RI = 20 kΩ
RF = 20 kΩ
RL = 8 Ω
CI = 1 µF
AV = –1 V/V
40
100°
80°
60°
Gain
20
0
–20
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 41
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
160°
140°
Closed-Loop Gain – dB
120°
VDD = 3.3 V
RI = 20 kΩ
RF = 20 kΩ
RL = 10 kΩ
CI = 1 µF
AV = –1 V/V
30
20
10
100°
80°
Gain
0
–10
10
100
1k
10k
100k
f – Frequency – Hz
Figure 42
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1M
Phase
180°
Phase
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
180°
Phase
Closed-Loop Gain – dB
140°
VDD = 5 V
RI = 20 kΩ
RF = 20 kΩ
RL = 8 Ω
CI = 1 µF
AV = –1 V/V
120°
Phase
160°
100°
80°
60°
40°
Gain
20
0
–20
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 43
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
200°
160°
Closed-Loop Gain – dB
140°
120°
VDD = 5 V
RI = 20 kΩ
RF = 20 kΩ
RL = 10 kΩ
CI = 1 µF
AV = –1 V/V
30
Phase
180°
Phase
100°
80°
20
10
Gain
0
–10
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 44
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17
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
POWER DISSIPATION/AMPLIFIER
vs
OUTPUT POWER
80
180
VDD = 3.3 V
70
VDD = 5 V
8Ω
140
Amplifier Power – mW
50
40
16 Ω
30
32 Ω
20
120
100
16 Ω
80
60
32 Ω
40
64 Ω
10
64 Ω
20
0
0
20
40
60
80 100 120 140 160 180
200
0
0
20
Load Power – mW
40
60
80 100 120 140 160 180
Load Power – mW
Figure 45
18
8Ω
160
60
Amplifier Power – mW
POWER DISSIPATION/AMPLIFIER
vs
OUTPUT POWER
Figure 46
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200
TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
gain setting resistors, RF and RI
ǒǓ
The gain for the TPA102 is set by resistors RF and RI according to equation 1.
Gain
+*
RF
(1)
RI
Given that the TPA102 is a MOS amplifier, the input impedance is very high. Consequently input leakage
currents are not generally a concern, although noise in the circuit increases as the value of RF increases. In
addition, a certain range of RF values is required for proper start-up operation of the amplifier. Taken together
it is recommended that the effective impedance seen by the inverting node of the amplifier be set between
5 kΩ and 20 kΩ. The effective impedance is calculated in equation 2.
Effective Impedance
+ RRF)RRI
F
(2)
I
As an example, consider an input resistance of 20 kΩ and a feedback resistor of 20 kΩ. The gain of the amplifier
would be – 1 and the effective impedance at the inverting terminal would be 10 kΩ, which is within the
recommended range.
For high performance applications, metal film resistors are recommended because they tend to have lower
noise levels than carbon resistors. For values of RF above 50 kΩ, the amplifier tends to become unstable due
to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small
compensation capacitor of approximately 5 pF should be placed in parallel with RF. This, in effect, creates a
low-pass filter network with the cutoff frequency defined in equation 3.
f c(lowpass)
+ 2 p R1 C
(3)
F F
For example, if RF is 100 kΩ and CF is 5 pF then fc(lowpass) is 318 kHz, which is well outside the audio range.
input capacitor, CI
In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the
proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency
determined in equation 4.
f c(highpass)
+ 2 p R1 C
(4)
I I
The value of CI is important to consider, as it directly affects the bass (low frequency) performance of the circuit.
Consider the example where RI is 20 kΩ and the specification calls for a flat bass response down to 20 Hz.
Equation 4 is reconfigured as equation 5.
CI
+ 2pR f
1
(5)
I c(highpass)
In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further
consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and
the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier
that reduces useful headroom, especially in high-gain applications (>10). For this reason a low-leakage
tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/2, which is
likely higher than the source dc level. It is important to confirm the capacitor polarity in the application.
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TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
power supply decoupling, CS
The TPA102 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to
ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also
prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is
achieved by using two capacitors of different types that target different types of noise on the power supply leads.
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance
(ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device VDD lead, works best. For
filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near
the power amplifier is recommended.
midrail bypass capacitor, CB
The midrail bypass capacitor, CB, serves several important functions. During startup, CB determines the rate
at which the amplifier starts up. This helps to push the start-up pop noise into the subaudible range (so low it
can not be heard). The second function is to reduce noise produced by the power supply caused by coupling
into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier. The capacitor
is fed from a 160-kΩ source inside the amplifier. To keep the start-up pop as low as possible, the relationship
shown in equation 6 should be maintained.
ǒ
CB
1
160 kΩ
1
v
Ǔ ǒC R Ǔ
(6)
I I
As an example, consider a circuit where CB is 1 µF, CI is 1 µF, and RI is 20 kΩ. Inserting these values into the
equation 9 results in: 6.25 ≤ 50 which satisfies the rule. Bypass capacitor, CB, values of 0.1 µF to 1 µF ceramic
or tantalum low-ESR capacitors are recommended for the best THD and noise performance.
output coupling capacitor, CC
In the typical single-supply single-ended (SE) configuration, an output coupling capacitor (CC) is required to
block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling
capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by
equation 7.
fc
+ 2 p R1 C
(7)
L C
The main disadvantage, from a performance standpoint, is that the typically small load impedances drive the
low-frequency corner higher. Large values of CC are required to pass low frequencies into the load. Consider
the example where a CC of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes the
frequency response characteristics of each configuration.
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TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
Table 1. Common Load Impedances Vs Low Frequency Output Characteristics in SE Mode
RL
CC
68 µF
Lowest Frequency
32 Ω
10,000 Ω
68 µF
0.23 Hz
47,000 Ω
68 µF
0.05 Hz
73 Hz
As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for
example) is very good.
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following
relationship:
ǒ
CB
1
160 kΩ
Ǔvǒ ǓƠ
1
CI RI
1
R LC C
(8)
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this application. A real capacitor can be modeled simply as
a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects
of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor
behaves like an ideal capacitor.
5-V versus 3.3-V operation
The TPA102 was designed for operation over a supply range of 2.5 V to 5.5 V. This data sheet provides full
specifications for 5-V and 3.3-V operation since these are considered to be the two most common standard
voltages. There are no special considerations for 3.3-V versus 5-V operation as far as supply bypassing, gain
setting, or stability. Supply current is slightly reduced from 3.5 mA (typical) to 2.5 mA (typical). The most
important consideration is that of output power. Each amplifier in the TPA102 can produce a maximum voltage
swing of VDD – 1 V. This means, for 3.3-V operation, clipping starts to occur when VO(PP) = 2.3 V as opposed
when VO(PP) = 4 V while operating at 5 V. The reduced voltage swing subsequently reduces maximum output
power into the load before distortion begins to become significant.
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TPA102
150-mW STEREO AUDIO POWER AMPLIFIER
SLOS213C – AUGUST 1998 – REVISED MARCH 2000
MECHANICAL DATA
DGN (S-PDSO-G8)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,38
0,25
0,65
8
0,25 M
5
Thermal Pad
(See Note D)
0,15 NOM
3,05
2,95
4,98
4,78
Gage Plane
0,25
1
0°– 6°
4
3,05
2,95
0,69
0,41
Seating Plane
1,07 MAX
0,15
0,05
0,10
4073271/A 04/98
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions include mold flash or protrusions.
The package thermal performance may be enhanced by attaching an external heat sink to the thermal pad.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-187
PowerPAD is a trademark of Texas Instruments.
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IMPORTANT NOTICE
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