TPV6030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV6030 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG(C) .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 9.5 dB at 35 W/860 MHz • Omnigold™ Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS J 15 A IC K DIM MIN IMUM inches / m m MAXIMUM inches / m m A .220 / 5.59 .230 / 5.84 28 V B C .120 / 3.05 VCBO 55 V D .380 / 9.65 .390 / 9.91 E .780 / 19.81 .820 / 20.83 VEBO 4.0 V VCEO PDISS 160 W @ TC = 25 °C -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 1.1 °C/W CHARACTERISTICS .130 / 3.30 F .435 / 11.05 G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 .205 / 5.21 L TC = 25 °C NONETEST CONDITIONS SYMBOL .210 / 5.33 BVCBO IC = 35 mA BVCER IC = 35 mA BVEBO IE = 10 mA ICER VCE = 30 V RBE = 75 Ω hFE VCE = 10 V IC = 2.0 A COB VCB = 28 V PG IMD VCC = 25 V POUT = 20 W POUT VCE = 25 V MINIMUM TYPICAL MAXIMUM RBE = 75 Ω 55 V 40 V 4.0 V 15 f = 1.0 MHz IC = 4.5 A f = 860 MHz f = 860 MHz 10 mA 100 --- 45 95 35 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF 10.5 -52 IC = 4.5 A UNITS -51 dB dBc W REV. A 1/1