UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical • Omnigold™ Metalization System .125 G S C D E F I GH MAXIMUM RATINGS 5.0 A ID VDDS VGS PDISS DIM MINIMUM inches / mm inches / mm 65 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 ±40 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 O -65 C to +200 C TJ O -65 C to +150 C θ JC 1.8 OC/W CHARACTERISTICS SYMBOL .280 / 7.11 I J O TSTG .385 / 9.78 E 100 W @ TC = 25 OC O MAXIMUM ORDER CODE: ASI10666 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM VDSS IDS = 10 mA IDSS VDS = 28 V 4.0 mA IGSS VGS = 20 V 1.0 µA VGS VDS = 10 V ID = 25 mA 1.0 6.0 V GFS VDS = 10 V ID = 500 mA 500 CISS COSS CRSS PG ηD VDS = 28 V VDD = 28 V f = 400 MHz 60 UNITS VGS = 0 V IDQ = 25 mA mMho 46 33 6.0 f = 1.0 MHz POUT = 25 W V pF 7.0 dB 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1