USB50803C-A thru USB50824C-A, e3 Bidirectional Low Capacitance TVSarray ™ SCOTTSDALE DIVISION APPEARANCE SO–8 WWW . Microsemi .C OM DESCRIPTION This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration giving protection to 2 Bidirectional data or interface lines. It is designed for use in applications where very low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-42, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning. It is also available with either Tin-Lead plated terminations or as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix to the part number*. Using the schematic on the second page, pins 1 & 2 are tied together for the first protected line, and pins 7 & 8 are tied together to ground. The same would occur for a second protected line where pins 3 & 4 tied together and pins 5 & 6 tied together to the ground. These may also be switched in polarity connections since the electrical features are the same in each antiparallel (opposite facing) leg when the pins are tied together in this manner for bidirectional protection. This device with an “A” suffix is opposite in polarity for each pin-to-pin leg to the USB50803C series (see schematic). This provides no functional difference for bidirectional TVS protection with the noted pins tied together as described above. These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS (USB) and I/O transceivers. The USB508XXC product provides board level protection from static electricity and other induced voltage surges that can damage or upset sensitive circuitry. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • APPLICATIONS / BENEFITS Protects up to 2 bidirectional lines Surge protection per IEC 61000-4-2, IEC 61000-4-4 Provides electrically isolated protection UL 94V-0 Flamability Classification RoHS Compliant devices available by adding “e3” suffix ULTRA LOW CAPACITANCE 3 pF per line pair ULTRA LOW LEAKAGE MAXIMUM RATINGS • • • • • • • • • • • EIA-RS485 data rates: 5 Mbs 10 Base T Ethernet USB date rate: 900 Mbs Tape & Reel per EIA Standard 481 13 inch reel; 2,500 pieces (OPTIONAL) Carrier tubes; 95 pcs (STANDARD) MECHANICAL AND PACKAGING • Molded SO-8 Surface Mount • Weight 0.066 grams (approximate) • Marking: Logo, device marking code*, date code • Pin #1 defined by dot on top of package Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Peak Pulse Power: 500 watts (8/20 µs, Figure 1) Pulse Repetition Rate: < .01% Solder Temperatures: 260°C for 10 s (maximum) ELECTRICAL CHARACTERISTICS DEVICE MARKING* STANDBY CURRENT ID @ VWM CAPACITANCE (f=1 MHz) C @0V TEMPERATURE COEFFICIENT OF VBR αVBR VOLTS µA pF mV/°C MAX MIN MAX MAX MAX MAX MAX VOLTS CLAMPING VOLTAGE VC @ 5 Amp (Figure 2) VOLTS USB50803C-A U3CA 3.3 4 8 11 200 3 -5 USB50805C-A U5CA 5.0 6.0 10.8 13 40 3 1 USB50812C-A U12CA 12.0 13.3 19 26 1 3 8 USB50815C-A U15CA 15.0 16.7 24 32 1 3 11 USB50824C-A U24CA 24.0 26.7 43 57 1 3 28 *Device marking has an e3 suffix added for the RoHS Compliant option, e.g. U3CAe3, U5CAe3, U12CAe3, U15CAe3, and U24CAe3. Copyright © 2006 8-01-2006 REV 0 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 USB508xxC-A PART NUMBER BREAKDOWN VOLTAGE VBR @1 mA CLAMPING VOLTAGE VC @ 1 Amp (Figure 2) VOLTS STANDOFF VOLTAGE VWM USB50803C-A thru USB50824C-A, e3 Bidirectional Low Capacitance TVSarray ™ SCOTTSDALE DIVISION Standoff Voltage: Maximum dc voltage that can be applied over the operating temperature range. VWM must be selected to be equal or be greater than the operating voltage of the line to be protected. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse time of 20 µs. Standby Current: Leakage current at VWM. Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. VWM VBR VC ID C Ppp Peak Pulse Power (W) GRAPHS WWW . Microsemi .C OM SYMBOLS & DEFINITIONS Definition Symbol 8/20µs 500W Pulse Figure 1 Peak Pulse Power Vs Pulse Time t = µsec Figure 2 Pulse Wave Form OUTLINE AND SCHEMATIC A B C D F G J K L P INCHES MIN MAX 0.188 0.197 0.150 0.158 0.053 0.069 0.011 0.021 0.0160 0.050 0.050 BSC 0.006 0.010 0.004 0.008 0.189 0.206 0.228 0.244 MILLIMETERS MIN MAX 4.77 5.00 3.81 4.01 1.35 1.75 0.28 0.53 0.41 1.27 1.27 BSC 0.15 0.25 0.10 0.20 4.80 5.23 5.79 6.19 PAD LAYOUT OUTLINE Copyright © 2006 8-01-2006 REV 0 USB508xxC-A DIM SCHEMATIC Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2