UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT23P09 is suitable for all commercial-industrial applications, etc. FEATURES * RDS(ON)<0.117Ω @ VGS=-10V, ID=-11A * High Switching Speed * Dynamic dv/dt Rating SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT23P09L-TA3-T UT23P09G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-844.a UT23P09 Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Drain Current VGS=-10V, TC=25°C -23 A Continuous ID VGS=-10V, TC=100°C -16 A Pulsed (Note 2) IDM -76 A Avalanche Current (Note 2) IAR -11 A 430 mJ Single Pulse (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation (TC=25°C) 140 W PD Linear Derating Factor 0.91 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. Starting TJ=25°C, L=7.1mH, RG=25Ω, IAS=-11A. 4. ISD≤-11A, di/dt≤-470A/µs, VDD≤BVDSS, TJ≤150°C. THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 1.1 UNIT °C/W °C/W 2 of 6 QW-R502-844.a UT23P09 Preliminary POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS VGS=0V, ID=-250µA IGSS TYP UNISONIC TECHNOLOGIES CO., LTD MAX UNIT -100 V -0.11 VDS=-100V, VGS=0V VDS=-80V, VGS=0V, TJ=150°C VGS=20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-11A (Note 5) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG ID=-11A, VDS=-80V, VGS=-10V, Gate-to-Source Charge QGS (Note 5) Gate-to-Drain ("Miller") Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-50V, ID=-11A, RG=5.1Ω RD=4.2Ω, (Note 5) Turn-OFF Delay Time tD(OFF) Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous IS Source Current Maximum Body-Diode Pulsed Current ISM (Note 2) TJ=25°C, IS=-11A, VGS=0V Drain-Source Diode Forward Voltage VSD (Note 5) TJ=25°C, IF=-11A, di/dt=-100A/µs Body Diode Reverse Recovery Time tRR (Note 5) Body Diode Reverse Recovery Charge QRR Note: 5. Pulse width≤300µs; duty cycle≤2%. www.unisonic.com.tw MIN ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA IDSS Forward Reverse TEST CONDITIONS -2.0 V/°C -25 -250 100 -100 µA µA nA nA 0.117 -4.0 Ω V 1300 400 240 pF pF pF 97 15 51 nC nC nC ns ns ns ns -23 A -76 A -1.6 V 150 220 ns 830 1200 nC 15 67 51 51 3 of 6 QW-R502-844.a UT23P09 Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-844.a UT23P09 Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-844.a UT23P09 Preliminary POWER MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-844.a