UNISONIC TECHNOLOGIES CO., LTD UTT220N03 Power MOSFET 220A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT220N03 is a N-channel MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT220N03 is generally applied in DC to DC convertor or synchronous rectification FEATURES * RDS(ON)<2.4mΩ @ VGS=10V * Low Gate Charge (Typical 84nC) * Fast Switching * 100% Avalanche Tested * High Power and Current Handling Capability * RoHS Compliant SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT220N03L-TA3-T UTT220N03G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tube MARKING INFORMATION PACKAGE MARKING TO-220 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-514.B UTT220N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS [TC=25°C, unless otherwise noted (Note 6)] PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V 220 A Continuous (TC=25°C) ID Drain Current TC=100°C 170 A Pulsed (Note 1) IDM 876 A Single Pulsed Avalanche Energy (Note 2) EAS 864 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 6.0 V/ns TC=25°C 214 W PD Power Dissipation TC=100°C 100 W Derate above 25°C 1.43 W/°C Junction Temperature TJ -55~+175 °C Storage Temperature TSTG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 0.7 UNIT °C/W °C/W 2 of 6 QW-R502-514.B UTT220N03 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V, TC=25°C 30 △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD V 30 VDS=32V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=80A VGS=0V, VDS=25V, f=1.0MHz QG QGS VGS=10V, VDS=30V, ID=1.3A Gate to Source Charge (Note 4, 5) QGS2 Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RGEN=4.7Ω, VGS=10V (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF Equivalent Series Resistance (G-S) ESR SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=80A, VGS=0V Body Diode Reverse Recovery Time tRR IS=80A, VGS=0V, dIF/dt=100A/µs (Note 4) Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 24A, VDD = 30V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.unisonic.com.tw MIN TYP MAX UNIT 1.0 2.0 mV/°C 10 +100 -100 µA nA nA 3.0 2.4 V mΩ 5490 7300 1220 1620 155 233 pF pF pF 200 19 9.5 12 58 260 1810 987 1.1 nC nC nC nC ns ns ns ns Ω 220 70 310 1860 1160 219 876 1.3 54 49 A A V ns nC 3 of 6 QW-R502-514.B UTT220N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-514.B UTT220N03 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms VGS RL QG 10V VDS VGS QGS QGD DUT 1mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 QW-R502-514.B UTT220N03 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-514.B