X5648, X5649 ® (Replaces X25648, X25649) Data Sheet March 17, 2005 CPU Supervisor with 64Kbit SPI EEPROM FEATURES • Low VCC detection and reset assertion —Five standard reset threshold voltages —Re-program low VCC reset threshold voltage using special programming sequence —Reset signal valid to VCC = 1V • Long battery life with low power consumption —<50µA max standby current, watchdog on —<1µA max standby current, watchdog off —<400µA max active current during read • 64Kbits of EEPROM • Built-in inadvertent write protection —Power-up/power-down protection circuitry —Protect 0, 1/4, 1/2 or all of EEPROM array with Block Lock™ protection —In circuit programmable ROM mode • 2MHz SPI interface modes (0,0 & 1,1) • Minimize EEPROM programming time —32-byte page write mode —Self-timed write cycle —5ms write cycle time (typical) • 2.7V to 5.5V and 4.5V to 5.5V power supply operation • Available packages —14-lead SOIC, 8-lead PDIP FN8136.0 DESCRIPTION These devices combine three popular functions, Poweron Reset Control, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory in one package. This combination lowers system cost, reduces board space requirements, and increases reliability. Applying power to the device activates the power-on reset circuit which holds RESET/RESET active for a period of time. This allows the power supply and oscillator to stabilize before the processor can execute code. The device’s low VCC detection circuitry protects the user’s system from low voltage conditions by holding RESET/RESET active when VCC falls below a minimum VCC trip point. RESET/RESET remains asserted until VCC returns to proper operating level and stabilizes. Five industry standard VTRIP thresholds are available, however, Intersil’s unique circuits allow the threshold to be reprogrammed to meet custom requirements or to fine-tune the threshold in applications requiring higher precision. BLOCK DIAGRAM WP Protect Logic Data Register SO Status Register Command Decode & Control Logic SCK CS 16Kbits 16Kbits 32Kbits EEPROM Array SI Reset Timebase VCC + VTRIP 1 - Power-on and Low Voltage Reset Generation RESET/RESET X5648 = RESET X5649 = RESET CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. X5648, X5649 PIN CONFIGURATION 14-Lead SOIC 8-Lead PDIP CS 1 SO 2 X5648/49 8 VCC 7 RESET/RESET NC 1 14 NC CS 2 13 VCC CS 3 12 VCC SO 4 11 RESET/RESET SCK X5648/49 WP 3 6 SCK WP 5 10 VSS 4 5 SI VSS 6 9 SI NC 7 8 NC PIN DESCRIPTION Pin (PDIP) Pin (SOIC) Name Function 1 2, 3 CS Chip Select Input. CS HIGH, deselects the device and the SO output pin is at a high impedance state. Unless a nonvolatile write cycle is underway, the device will be in the standby power mode. CS LOW enables the device, placing it in the active power mode. Prior to the start of any operation after power-up, a HIGH to LOW transition on CS is required. 2 4 SO Serial Output. SO is a push/pull serial data output pin. A read cycle shifts data out on this pin. The falling edge of the serial clock (SCK) clocks the data out. 5 9 SI Serial Input. SI is a serial data input pin. Input all opcodes, byte addresses, and memory data on this pin. The rising edge of the serial clock (SCK) latches the input data. Send all opcodes (Table 1), addresses and data MSB first. 6 10 SCK Serial Clock. The serial clock controls the serial bus timing for data input and output. The rising edge of SCK latches in the opcode, address, or data bits present on the SI pin. The falling edge of SCK changes the data output on the SO pin. 3 5 WP Write Protect. The WP pin works in conjunction with a nonvolatile WPEN bit to “lock” the setting of the watchdog timer control and the memory write protect bits. 4 6 VSS Ground 8 12, 13 VCC Supply Voltage 7 11 RESET/ RESET 1, 7, 8, 14 NC 2 Reset Output. RESET/RESET is an active LOW/HIGH, open drain output which goes active whenever VCC falls below the minimum VCC sense level. It will remain active until VCC rises above the minimum VCC sense level for 200ms. RESET/RESET goes active if the watchdog timer is enabled and CS remains either HIGH or LOW longer than the selectable watchdog time out period. A falling edge of CS will reset the watchdog timer. RESET/RESET goes active on powerup at about 1V and remains active for 200ms after the power supply stabilizes. No internal connections FN8136.0 March 17, 2005 X5648, X5649 PRINCIPLES OF OPERATION Power-on Reset Application of power to the X5648/X5649 activates a power-on reset circuit. This circuit goes active at about 1V and pulls the RESET/RESET pin active. This signal prevents the system microprocessor from starting to operate with insufficient voltage or prior to stabilization of the oscillator. When VCC exceeds the device VTRIP value for 200ms (nominal) the circuit releases RESET/RESET, allowing the processor to begin executing code. Low Voltage Monitoring During operation, the X5648/X5649 monitors the VCC level and asserts RESET/RESET if supply voltage falls below a preset minimum VTRIP. The RESET/RESET signal prevents the microprocessor from operating in a power fail or brownout condition. The RESET/RESET signal remains active until the voltage drops below 1V. It also remains active until VCC returns and exceeds VTRIP for 200ms. VCC Threshold Reset Procedure The X5648/X5649 has a standard VCC threshold (VTRIP) voltage. This value will not change over normal operating and storage conditions. However, in applications where the standard VTRIP is not exactly right, or for higher precision in the VTRIP value, the X5648/X5649 threshold may be adjusted. Figure 1. Set VTRIP Voltage CS VP SCK VP SI Resetting the VTRIP Voltage This procedure sets the VTRIP to a “native” voltage level. For example, if the current VTRIP is 4.4V and the VTRIP is reset, the new VTRIP is something less than 1.7V. This procedure must be used to set the voltage to a lower value. To reset the VTRIP voltage, apply a voltage between 2.7 and 5.5V to the VCC pin. Tie the CS pin, the WP pin, and the SCK pin HIGH. RESET/RESET and SO pins are left unconnected. Then apply the programming voltage VP to the SI pin ONLY and pulse CS LOW then HIGH. Remove VP and the sequence is complete. Figure 2. Reset VTRIP Voltage CS SCK Setting the VTRIP Voltage This procedure sets the VTRIP to a higher voltage value. For example, if the current VTRIP is 4.4V and the new VTRIP is 4.6V, this procedure directly makes the change. If the new setting is lower than the current setting, then it is necessary to reset the trip point before setting the new value. VCC VP SI To set the new VTRIP voltage, apply the desired VTRIP threshold to the Vcc pin and tie the CS pin and the WP pin HIGH. RESET/RESET and SO pins are left unconnected. Then apply the programming voltage VP to both SCK and SI and pulse CS LOW then HIGH. Remove VP and the sequence is complete. 3 FN8136.0 March 17, 2005 X5648, X5649 Figure 3. VTRIP Programming Sequence Flow Chart VTRIP Programming Execute Reset VTRIP Sequence Set VCC = VCC Applied = Desired VTRIP New VCC Applied = Old VCC Applied + Error Execute Set VTRIP Sequence New VCC Applied = Old VCC Applied - Error Apply 5V to VCC Execute Reset VTRIP Sequence Decrement VCC (VCC = VCC - 10mV) NO RESET pin goes active? YES Error ≥ Emax Measured VTRIP Desired VTRIP Error > Emax Error < Emax Emax = Maximum Desired Error 4 DONE FN8136.0 March 17, 2005 X5648, X5649 Figure 4. Sample VTRIP Reset Circuit VP NC 4.7K NC VTRIP Adj. 4.7K + RESET 1 8 2 7 X5648/49 3 6 4 5 NC Program 10K Reset VTRIP Test VTRIP Set VTRIP 10K SPI SERIAL MEMORY Write Enable Latch The memory portion of the device is a CMOS serial EEPROM array with Intersil’s block lock protection. The array is internally organized as x 8. The device features a Serial Peripheral Interface (SPI) and software protocol allowing operation on a simple four-wire bus. The device contains a write enable latch. This latch must be SET before a write operation is initiated. The WREN instruction will set the latch and the WRDI instruction will reset the latch (Figure 3). This latch is automatically reset upon a power-up condition and after the completion of a valid write cycle. The device utilizes Intersil’s proprietary Direct Write™ cell, providing a minimum endurance of 100,000 cycles and a minimum data retention of 100 years. The device is designed to interface directly with the synchronous Serial Peripheral Interface (SPI) of many popular micro controller families. It contains an 8-bit instruction register that is accessed via the SI input, with data being clocked in on the rising edge of SCK. CS must be LOW during the entire operation. All instructions (Table 1), addresses and data are transferred MSB first. Data input on the SI line is latched on the first rising edge of SCK after CS goes LOW. Data is output on the SO line by the falling edge of SCK. SCK is static, allowing the user to stop the clock and then start it again to resume operations where left off. Status Register The RDSR instruction provides access to the status register. The status register may be read at any time, even during a write cycle. The status register is formatted as follows: 7 6 5 4 3 2 1 0 WPEN FLB 0 0 BL1 BL0 WEL WIP The Write-In-Progress (WIP) bit is a volatile, read only bit and indicates whether the device is busy with an internal nonvolatile write operation. The WIP bit is read using the RDSR instruction. When set to a “1”, a nonvolatile write operation is in progress. When set to a “0”, no write is in progress. Table 1. Instruction Set Instruction Name Note: Instruction Format* Operation WREN 0000 0110 Set the write enable latch (enable write operations) SFLB 0000 0000 Set flag bit WRDI/RFLB 0000 0100 Reset the write enable latch/reset flag bit RSDR 0000 0101 Read status register WRSR 0000 0001 Write status register (watchdog, block lock, WPEN & flag bits) READ 0000 0011 Read data from memory array beginning at selected address WRITE 0000 0010 Write data to memory array beginning at selected address *Instructions are shown MSB in left most position. Instructions are transferred MSB first. 5 FN8136.0 March 17, 2005 X5648, X5649 Table 2. Block Protect Matrix WREN CMD Status Register Device Pin Block Block Status Register WEL WPEN WP# Protected Block Unprotected Block WPEN, BL0, BL1 WD0, WD1 0 X X Protected Protected Protected 1 1 0 Protected Writable Protected 1 0 X Protected Writable Writable 1 X 1 Protected Writable Writable The Write Enable Latch (WEL) bit indicates the status of the write enable latch. When WEL = 1, the latch is set HIGH and when WEL = 0 the latch is reset LOW. The WEL bit is a volatile, read only bit. It can be set by the WREN instruction and can be reset by the WRDS instruction. The block lock bits, BL0 and BL1, set the level of block lock protection. These nonvolatile bits are programmed using the WRSR instruction and allow the user to protect one quarter, one half, all or none of the EEPROM array. Any portion of the array that is block lock protected can be read but not written. It will remain protected until the BL bits are altered to disable block lock protection of that portion of memory. Status Register Bits BL1 Array Addresses Protected BL0 X5648/X5649 Setting the WP pin LOW while WPEN is a “1” while an internal write cycle to the status register is in progress will not stop this write operation, but the operation disables subsequent write attempts to the status register. When WP is HIGH, all functions, including nonvolatile writes to the status register operate normally. Setting the WPEN bit in the status register to “0” blocks the WP pin function, allowing writes to the status register when WP is HIGH or LOW. Setting the WPEN bit to “1” while the WP pin is LOW activates the programmable ROM mode, thus requiring a change in the WP pin prior to subsequent status register changes. This allows manufacturing to install the device in a system with WP pin grounded and still be able to program the status register. Manufacturing can then load configuration data, manufacturing time and other parameters into the EEPROM, then set the portion of memory to be protected by setting the block lock bits, and finally set the “OTP mode” by setting the WPEN bit. Data changes now require a hardware change. 0 0 None 0 1 $1800-$1FFF 1 0 $1000-$1FFF Read Sequence 1 1 $0000-$1FFF When reading from the EEPROM memory array, CS is first pulled low to select the device. The 8-bit READ instruction is transmitted to the device, followed by the 16-bit address. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is terminated by taking CS high. Refer to the read EEPROM array sequence (Figure 1). The FLAG bit shows the status of a volatile latch that can be set and reset by the system using the SFLB and RFLB instructions. The flag bit is automatically reset upon power-up. The nonvolatile WPEN bit is programmed using the WRSR instruction. This bit works in conjunction with the WP pin to provide an in-circuit programmable ROM function (Table 2). WP is LOW and WPEN bit programmed HIGH disables all status register write operations. In Circuit Programmable ROM Mode This mechanism protects the block lock and watchdog bits from inadvertent corruption. In the locked state (programmable ROM Mode) the WP pin is LOW and the nonvolatile bit WPEN is “1”. This mode disables nonvolatile writes to the device’s status register. 6 To read the status register, the CS line is first pulled low to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the status register are shifted out on the SO line. Refer to the read status register sequence (Figure 2). FN8136.0 March 17, 2005 X5648, X5649 Figure 5. Read EEPROM Array Sequence CS 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 SCK Instruction 16 Bit Address 15 14 13 SI 3 2 1 0 Data Out High Impedance SO 7 6 5 4 3 2 1 0 MSB Write Sequence OPERATIONAL NOTES Prior to any attempt to write data into the device, the Write Enable Latch (WEL) must first be set by issuing the WREN instruction (Figure 3). CS is first taken LOW, then the WREN instruction is clocked into the device. After all eight bits of the instruction are transmitted, CS must then be taken HIGH. If the user continues the write operation without taking CS HIGH after issuing the WREN instruction, the write operation will be ignored. The device powers-up in the following state: To write data to the EEPROM memory array, the user then issues the WRITE instruction followed by the 16 bit address and then the data to be written. Any unused address bits are specified to be “0’s”. The WRITE operation minimally takes 32 clocks. CS must go low and remain low for the duration of the operation. If the address counter reaches the end of a page and the clock continues, the counter will roll back to the first address of the page and overwrite any data that may have been previously written. For the page write operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of the last data byte to be written is clocked in. If it is brought HIGH at any other time, the write operation will not be completed (Figure 4). – The device is in the low power standby state. – A HIGH to LOW transition on CS is required to enter an active state and receive an instruction. – SO pin is high impedance. – The write enable latch is reset. – The flag bit is reset. – Reset signal is active for tPURST. Data Protection The following circuitry has been included to prevent inadvertent writes: – A WREN instruction must be issued to set the write enable latch. – CS must come HIGH at the proper clock count in order to start a nonvolatile write cycle. To write to the status register, the WRSR instruction is followed by the data to be written (Figure 5). Data bits 0 and 1 must be “0”. While the write is in progress following a status register or EEPROM sequence, the status register may be read to check the WIP bit. During this time the WIP bit will be high. 7 FN8136.0 March 17, 2005 X5648, X5649 Figure 6. Read Status Register Sequence CS 0 1 2 3 4 5 6 7 8 9 10 7 6 5 11 12 13 14 SCK Instruction SI Data Out SO High Impedance 4 3 2 1 0 MSB Figure 7. Write Enable Latch Sequence CS 0 1 2 3 4 5 6 7 SCK SI SO 8 High Impedance FN8136.0 March 17, 2005 X5648, X5649 Figure 8. Write Sequence CS 0 1 2 3 4 5 6 7 8 9 20 21 22 23 24 25 26 27 28 29 30 31 10 SCK Instruction 16 Bit Address 15 14 13 SI 3 Data Byte 1 2 1 0 7 6 5 4 3 2 1 0 CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCK Data Byte 2 SI 7 6 5 4 3 Data Byte 3 2 1 0 7 6 5 4 3 Data Byte N 2 1 6 0 5 4 3 2 1 0 Figure 9. Status Register Write Sequence CS 0 1 2 3 4 5 6 7 8 9 10 7 6 5 11 12 13 14 15 SCK Instruction SI SO Data Byte 4 3 2 1 0 High Impedance SYMBOL TABLE WAVEFORM INPUTS OUTPUTS Must be steady Will be steady May change from LOW to HIGH Will change from LOW to HIGH May change from HIGH to LOW Will change from HIGH to LOW Don’t Care: Changes Allowed Changing: State Not Known N/A Center Line is High Impedance 9 FN8136.0 March 17, 2005 X5648, X5649 ABSOLUTE MAXIMUM RATINGS COMMENT Temperature under bias ................... -65°C to +135°C Storage temperature ........................ -65°C to +150°C Voltage on any Pin with respect to VSS ... -1.0V to +7V D.C. Output Current ............................................. 5mA Lead temperature (soldering, 10 seconds) ........ 300°C Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; the functional operation of the device (at these or any other conditions above those listed in the operational sections of this specification) is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Temperature Commercial Industrial Min. 0°C -40°C Max. 70°C +85°C Voltage Option Supply Voltage -2.7 or -2.7A 2.7V to 5.5V Blank or -4.5A 4.5V-5.5V D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) Limits Symbol Parameter Min. Typ. Max. Unit Test Conditions ICC1 VCC write current (active) 5 mA SCK = VCC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ICC2 VCC read current (active) 0.4 mA SCK = VCC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ISB VCC standby current WDT = OFF 1 µA CS = VCC, VIN = VSS or VCC, VCC = 5.5V ILI Input leakage current 0.1 10 µA VIN = VSS to VCC ILO Output leakage current 0.1 10 µA VOUT = VSS to VCC (1) Input LOW voltage -0.5 VCC x 0.3 V VIH(1) Input HIGH voltage VCC x 0.7 VCC + 0.5 V VOL1 Output LOW voltage 0.4 V VOL2 Output LOW voltage 0.4 V VOL3 Output LOW voltage 0.4 V VCC ≤ 2V, IOL = 0.5mA VOH1 Output HIGH voltage VCC - 0.8 V VCC > 3.3V, IOH = –1.0mA VOH2 Output HIGH voltage VCC - 0.4 V VOH3 Output HIGH voltage VCC - 0.2 V VCC ≤ 2V, IOH = -0.25mA VOLS Reset output LOW voltage V IOL = 1mA VIL 0.4 VCC > 3.3V, IOL = 2.1mA 2V < VCC ≤ 3.3V, IOL = 1mA 2V < VCC ≤ 3.3V, IOH = –0.4mA CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V Symbol COUT CIN (2) (2) Test Max. Unit Conditions Output capacitance (SO, RESET/RESET) 8 pF VOUT = 0V Input capacitance (SCK, SI, CS, WP) 6 pF VIN = 0V Notes: (1) VIL min. and VIH max. are for reference only and are not tested. (2) This parameter is periodically sampled and not 100% tested. 10 FN8136.0 March 17, 2005 X5648, X5649 EQUIVALENT A.C. LOAD CIRCUIT AT 5V VCC 5V 5V 4.6kΩ 2.06kΩ Output A.C. TEST CONDITIONS Input pulse levels VCC x 0.1 to VCC x 0.9 Input rise and fall times 10ns Input and output timing level VCC x 0.5 RESET/RESET 3.03kΩ 30pF 100pF A.C. CHARACTERISTICS (Over recommended operating conditions, unless otherwise specified) Serial Input Timing 2.7-5.5V Symbol Parameter Min. Max. Unit 0 2 MHz fSCK Clock frequency tCYC Cycle time 500 ns tLEAD CS lead time 250 ns tLAG CS lag time 250 ns tWH Clock HIGH time 200 ns tWL Clock LOW time 250 ns tSU Data setup time 50 ns tH Data hold time 50 ns tRI(3) tFI(3) Input rise time 100 ns Input fall time 100 ns tCS tWC (4) CS deselect time 500 ns Write cycle time 10 ms Serial Input Timing tCS CS tLEAD tLAG SCK tSU SI SO tH MSB IN tRI tFI LSB IN High Impedance 11 FN8136.0 March 17, 2005 X5648, X5649 Serial Output Timing 2.7-5.5V Symbol Parameter Min. Unit fSCK Clock frequency 2 MHz tDIS Output disable time 250 ns Output valid from clock low 250 ns tV 0 Max. tHO Output hold time tRO(3) tFO(3) Output rise time 100 ns Output fall time 100 ns 0 ns Notes: (3) This parameter is periodically sampled and not 100% tested. (4) tWC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile write cycle. Serial Output Timing CS tCYC tWH tLAG SCK tV SO SI tHO MSB Out tWL MSB–1 Out tDIS LSB Out ADDR LSB IN Power-Up and Power-Down Timing VTRIP VTRIP VCC tPURST 0 Volts tPURST tR tF tRPD RESET (X5648) RESET (X5649) 12 FN8136.0 March 17, 2005 X5648, X5649 RESET Output Timing Symbol VTRIP VTH tPURST tRPD (5) Parameter Reset trip point voltage, X5648-4.5A, X5648-4.5A Reset trip point voltage, X5648, X5649 Reset trip point voltage, X5648-2.7A, X5649-2.7A Reset trip point voltage, X5648-2.7, X5649-2.7 Min. Typ. Max. Unit 4.5 4.25 2.85 2.55 4.63 4.38 2.93 2.63 4.75 4.5 3.0 2.7 V VTRIP hysteresis (HIGH to LOW vs. LOW to HIGH VTRIP voltage) Power-up reset time out 20 100 VCC detect to reset/output 200 mV 280 ms 500 ns tF(5) VCC fall time 100 µs tR(5) VCC rise time 100 µs 1 V VRVALID Note: Reset valid VCC (5) This parameter is periodically sampled and not 100% tested. VTRIP Set Conditions tTHD VCC VTRIP tTSU tVPS CS tVPS tRP tP tVPH tVPH tVPO VP SCK VP tVPO SI 13 FN8136.0 March 17, 2005 X5648, X5649 VTRIP Reset Conditions VCC* tRP tP tVPS CS tVPS tVP1 tVPH tVPO VCC SCK VP tVPO SI *VCC > Programmed VTRIP VTRIP Programming Specifications VCC = 1.7-5.5V; Temperature = 0°C to 70°C Parameter Description Min. Max. tVPS SCK VTRIP program voltage setup time tVPH SCK VTRIP program voltage hold time 1 µs VTRIP program pulse width 1 µs tTSU VTRIP level setup time 10 µs tTHD VTRIP level hold (stable) time 10 ms tWC VTRIP write cycle time tRP VTRIP program cycle recovery period (between successive programming cycles) 10 ms tVPO SCK VTRIP program voltage off time before next cycle 0 ms Programming voltage 15 tP VP VTRAN 1 Unit µs 10 ms 18 V VTRIP programed voltage range 1.7 5.0 V Vta1 Initial VTRIP program voltage accuracy (VCC applied - VTRIP) (programmed at 25°C) -0.1 +0.4 V Vta2 Subsequent VTRIP program voltage accuracy [(VCC applied - Vta1) - VTRIP) (programmed at 25°C) -25 +25 mV Vtr VTRIP program voltage repeatability (successive program operations) (programmed at 25°C) -25 +25 mV Vtv VTRIP program variation after programming (0 - 75°C). (programmed at 25°C.) -25 +25 mV VTRIP programming parameters are periodically sampled and are not 100% tested. 14 FN8136.0 March 17, 2005 X5648, X5649 TYPICAL PERFORMANCE tPURST vs. Temperature VCC Supply Current vs. Temperature (ISB) 205 18 200 Watchdog Timer On (VCC = 5V) 16 195 14 190 Time (ms) Isb (µA) 12 Watchdog Timer On (VCC = 5V) 10 8 6 185 180 175 170 165 4 Watchdog Timer Off (VCC = 3V, 5V) 2 160 -40 0 -40 25 Temp (°C) 90 25 Degrees °C 90 VTRIP vs. Temperature (programmed at 25°C) 5.025 VTRIP = 5V 5.000 4.975 Voltage 3.525 VTRIP = 3.5V 3.500 3.475 2.525 VTRIP = 2.5V 2.500 2.475 0 25 Temperature 15 85 FN8136.0 March 17, 2005 X5648, X5649 PACKAGING INFORMATION 8-Lead Plastic Dual In-Line Package Type P 0.430 (10.92) 0.360 (9.14) 0.260 (6.60) 0.240 (6.10) Pin 1 Index Pin 1 0.300 (7.62) Ref. Half Shoulder Width On All End Pins Optional 0.145 (3.68) 0.128 (3.25) Seating Plane 0.025 (0.64) 0.015 (0.38) 0.065 (1.65) 0.045 (1.14) 0.150 (3.81) 0.125 (3.18) 0.110 (2.79) 0.090 (2.29) .073 (1.84) Max. Typ. 0.010 (0.25) 0.060 (1.52) 0.020 (0.51) 0.020 (0.51) 0.016 (0.41) 0.325 (8.25) 0.300 (7.62) 0° 15° NOTE: 1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 2. PACKAGE DIMENSIONS EXCLUDE MOLDING FLASH 16 FN8136.0 March 17, 2005 X5648, X5649 PACKAGING INFORMATION 14-Lead Plastic, SOIC, Package Code S14 0.150 (3.80) 0.228 (5.80) 0.158 (4.00) 0.244 (6.20) Pin 1 Index Pin 1 0.014 (0.35) 0.020 (0.51) 0.336 (8.55) 0.345 (8.75) (4X) 7° 0.053 (1.35) 0.069 (1.75) 0.004 (0.10) 0.010 (0.25) 0.050 (1.27) 0.050"Typical 0.010 (0.25) 0.020 (0.50) X 45° 0.050"Typical 0° - 8° 0.0075 (0.19) 0.010 (0.25) 0.250" 0.016 (0.410) 0.037 (0.937) FOOTPRINT 0.030"Typical 14 Places NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 17 FN8136.0 March 17, 2005 X5648, X5649 Ordering Information VCC Range VTRIP Range Package Operating Temperature Range Part Number RESET (Active LOW) Part Number RESET (Active HIGH) 4.5-5.5V 4.5.4.75 8 pin PDIP 0-70°C X5648P-4.5A X5649P-4.5A 14L SOIC 0-70°C X5648S14-4.5A X5649S14-4.5A -40-85°C X5648S14I-4.5A X5649S14I-4.5A 8 pin PDIP 0-70°C X5648P X5649P 14L SOIC 0-70°C X5648S14 X5649S14 -40-85°C X5648S14I X5649S14I 4.5-5.5V 4.25.4.5 2.7-5.5V 2.85-3.0 14L SOIC 0-70°C X5648S14-2.7A X5649S14-2.7A 2.7-5.5V 2.55-2.7 14L SOIC 0-70°C X5648S14-2.7 X5649S14-2.7 Part Mark Information X5648/49 W X Blank = 14-Lead SOIC P = 8 Pin DIP Blank = 5V ±10%, 0°C to +70°C, VTRIP = 4.25-4.5 AL = 5V±10%, 0°C to +70°C, VTRIP = 4.5-4.75 I = 5V ±10%, -40°C to +85°C, VTRIP = 4.25-4.5 AM = 5V ±10%, -40°C to +85°C, VTRIP = 4.5-4.75 F = 2.7V to 5.5V, 0°C to +70°C, VTRIP = 2.55-2.7 AN = 2.7V to 5.5V, 0°C to +70°C, VTRIP = 2.85-3.0 G = 2.7V to 5.5V, -40°C to +85°C, VTRIP = 2.55-2.7 AP = 2.7V to 5.5V, -40°C to +85°C, VTRIP = 2.85-3.0 All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 18 FN8136.0 March 17, 2005