TOREX XC6601B081ER

XC6601 Series
ETR0335_003
Low Voltage Input LDO Voltage Regulators
■GENERAL DESCRIPTION
The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate (±20mV) outputs and can
supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the
applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver
transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit and
a phase compensation circuit.
Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and
ceramic capacitors can be used for the output stabilization capacitor (CL).
The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the
TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit
level or the junction temperature reaches the temperature limit level.
With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls
below the UVLO voltage level.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor
(CL) to be discharged via the internal auto-discharge switch which is located between the VOUT pin and the VSS pin. As a
result the VOUT pin quickly returns to the VSS level.
■APPLICATIONS
●Mobile phones
●Cordless phones
●Wireless communication equipment
■FEATURES
Maximum Output Current
Dropout Voltage
Bias Voltage Range
(VBIAS - VOUT≧1.2V)
●Portable games
Input Voltage Range
●Cameras
Output Voltage Range
Output Voltage Accuracy
Power Consumption
●Audio visual equipment
●Portable AV equipment
●PDAs
: 400mA (Limiter 550mA TYP.)
: 38mV@IOUT=100mA (TYP.)
(at VBIAS - VOUT=2.4V)
: 2.5V ~ 6.0V
UVLO
TSD (Detect/Release)
Operating Temperature Range
CL High Speed Auto-Discharge
Low ESR Capacitor
Packages
: 1.0V ~ 3.0V
(VIN≦VBIAS)
: 0.7V ~ 1.8V (0.05V increments)
:±20mV
: IBIAS=25μA , IIN=1.0μA (TYP.)
: IBIAS=0.01μA , IIN=0.01μA (TYP.)
: VBIAS=2.0V, VIN=0.4V (TYP.)
:150℃/125℃ (TYP.)
: -40℃ ~ 85℃
: Ceramic Capacitor Compatible
: USP-6C, SOT-25, SOT-89-5
■ TYPICAL APPLICATION CIRCUIT ■ TYPICAL PEFORMANCE
CHARACTERISTICS
●VBIAS =3.6V , VIN =1.8V , VOUT =1.5V
●Dropout Voltage vs. Output Current
XC 6 6 0 1 B 1 2 1 M R
Ta=25 [℃]
300
VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
Dropout Voltage: Vdif(mV)
250
200
150
100
50
0
0
100
200
300
400
Output Current: IOUT(mA)
1/32
XC6601 Series
■PIN CONFIGURATION
●SOT-25
●USP-6C
●SOT-89-5
VOUT
CE
5
4
1
2
3
VIN
VBIAS
VSS
SOT-25
(TOP VIEW)
*The heat dissipation pad of the USP-6C
package is recommended to solder as the
recommended mount pattern and metal
mask pattern for mounting strength. This
pad should be electrically opened or
connected to the VBIAS (No.1) pin.
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTION
VBIAS
Power Supply Input
4
VIN
Driver Transistor Input
5
VOUT
Output
3
3
VSS
Ground
4
1
CE
ON/OFF Control
USP-6C
SOT-25
SOT-89-5
1
2
2
3
1
4
5
2
6
■PRODUCT CLASSIFICATION
●Ordering Information
XC6601①②③④⑤⑥
MARK
DESCRIPTION
SYMBOL
DESCRIPTION
①
Type of
Regulators
②③
Output Voltage
A
B
07 ~ 18
④
Output Voltage
Accuracy
: CE High Active, Pull-Down Resistor Built-in, CL Auto Discharge Function
: CE High Active, No Pull-Down Resistor Built-in, CL Auto Discharge Function
: e.g.) VOUT(T)=1.2V⇒②=1,③=2
: 100mV increments, ±20mV accuracy
e.g.) 1.2V⇒②=1,③=2,④=1
: 50mV increments, ±20mV accuracy
e.g.) 1.25V⇒②=1,③=2,④=B
2/32
⑤
Packages
⑥
Device Orientation
1
B
M
: SOT-25
E
P
R
L
: USP-6C
: SOT-89-5
: Embossed Tape (Standard Feed)
: Embossed Tape (Reverse Feed)
XC6601
Series
■BLOCK DIAGRAMS
(1) XC6601A Series
(2) XC6601B Series
*Diodes inside the circuit are an ESD protection diode and a parasitic diode.
3/32
XC6601 Series
■MAXIMUM ABSOLUTE RATINGS
Ta=25 ℃
PARAMETER
Bias Voltage
Input Voltage
Output Current
SYMBOL
VBIAS
VIN
IOUT
Output Voltage
VOUT
CE Input Voltage
VCE
USP-6C
Power Dissipation
SOT-25
SOT-89-5
Pd
RATINGS
VSS-0.3 ~ +7.0
VSS-0.3 ~ +7.0
700 (*1)
VSS-0.3 ~ VBIAS+0.3
VSS-0.3 ~ VIN+0.3
VSS-0.3 ~ +7.0
100
1000 (PCB mounted) *2
250
600 (PCB mounted) *2
500
1300 (PCB mounted) *2
-40 ~ +85
-55 ~ +125
UNITS
V
V
mA
V
V
mW
Operating Temperature Range
Topr
℃
Storage Temperature Range
Tstg
℃
(*1)
IOUT=Less than Pd / (VIN-VOUT)
(*2)
The power dissipation figure shown is PCB mounted. Please refer to pages 28~30 for details.
4/32
XC6601
Series
■ELECTRICAL CHARACTERISTICS
PARAMETER
Ta=25 ℃
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
Bias Voltage
(*1)
VBIAS
VCE =VBIAS,VIN =VOUT(T)+0.3V
2.5
-
6.0
V
①
Input Voltage
(*2)
VIN
VBIAS=VCE=3.6V
1.0
-
3.0
V
①
V
①
Output Voltage
Maximum Output
Current 1
Maximum Output
Current 2
Maximum Output
Current 3
VOUT(E) (*3)
IOUTMAX 1
IOUTMAX 2
IOUTMAX 3
Load Regulation
△VOUT
Dropout Voltage 1
Dropout Voltage 2
Dropout Voltage 3
Dropout Voltage 4
Vdif1(*7)
Vdif2 (*7)
Vdif3 (*7)
Vdif4 (*7)
Supply Current 1
IBIAS
Supply Current 2
IIN
Bias Current (*10)
IBIASMAX
Stand-by Current 1
Stand-by Current 2
IBIAS_STB
IIN_STB
Bias Regulation
△VOUT/
△VBIAS・VOUT
Input Regulation
△VOUT/
△VIN・VOUT
Bias Voltage UVLO
VBIAS_UVLO
Input Voltage UVLO
VIN_UVLO
VBIAS Ripple Rejection
VBIAS_PSRR
VIN Ripple Rejection
VIN_PSRR
VBIAS=VCE=3.6V, VIN =VOUT(T)+0.3V,
IOUT=100mA
VCE =VBIAS ,VBIAS -VOUT(T)≧1.2V
VIN =VOUT(T)+0.5V
VCE =VBIAS ,VBIAS -VOUT(T)≧1.3V
VIN =VOUT(T)+0.5V
VCE =VBIAS ,VBIAS -VOUT(T)≧1.5V
VIN =VOUT(T)+0.5V
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
1mA≦IOUT≦300mA
VBIAS=VCE, IOUT=100mA
VCE =VBIAS , IOUT=200mA
VCE =VBIAS , IOUT=300mA
VCE =VBIAS , IOUT=400mA
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN
VOUT(T)≧1.0V
VBIAS=VCE =3.6V, VIN=VOUT(T)
VOUT= VOUT(T) - 0.05V
VOUT(T)＜1.0V
VBIAS=VCE =3.6V, VIN=1.0V
VOUT= VOUT(T) - 0.05V
VBIAS=6.0V, VIN=3.0V, VCE=VSS
VBIAS=6.0V, VIN=3.0V, VCE=VSS
VOUT(T)≧1.3V
VOUT(T)+1.2V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
VOUT(T)＜1.3V
2.5V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
VOUT(T)≧0.90V,
VOUT(T)+0.1V≦VIN≦3.0V,
VBIAS=VCE=3.6V, IOUT=1mA
V OUT(T)＜0.90V,
1.0V≦VIN≦3.0V
VBIAS=VCE=3.6V, IOUT=1mA
VCE =VBIAS, VIN =VOUT(T)+0.3V,
IOUT=1mA
VBIAS=VCE=3.6V, IOUT=1mA
VBIAS= VCE =3.6VDC+0.2Vp-pAC,
VIN=VOUT(T)+0.3V, IOUT=30mA,f=1kHz
VIN=VOUT(T)+0.3VDC+0.2Vp-pAC,
VBIAS=3.6V, IOUT=30mA, f=1kHz
-0.02
VOUT(T)
E-0
(*4)
+0.02
(*5)
UNITS CIRCUIT
200
-
-
mA
①
300
-
-
mA
①
400
-
-
mA
①
-
8
17
mV
①
mV
mV
mV
mV
①
①
①
①
E-1
(*6)
E-2
(*6)
E-3
(*6)
E-4
(*6)
8
25
45
μA
①
0.1
1.0
3.0
μA
①
-
1.0
2.5
mA
①
-
0.01
0.01
0.10
0.35
μA
μA
①
①
-
0.01
0.3
%/V
①
-
0.01
0.1
%/V
①
1.37
2.0
2.5
V
①
0.07
0.4
0.6
V
①
-
40
-
dB
②
-
60
-
dB
②
5/32
XC6601 Series
■ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYNBOL
Output Voltage
Temperature
Characteristics
△VOUT/
△Topr・VOUT
Limit Current
ILIM
Short Current
ISHORT
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Hysteresis Width
CL Auto-Discharge
Resistance
CE "H" Level Voltage
Ta=25 ℃
CONDITIONS
MIN.
TYP.
MAX.
-
±100
-
ppm/℃
①
400
550
-
mA
①
-
80
-
mA
①
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V ,
IOUT=30mA,
- 40℃≦ Topr ≦85℃
VOUT=VOUT(E)×0.95,
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
VOUT=0V
UNITS CIRCUIT
TTSD
Junction Temperature
-
150
-
℃
①
TTSR
Junction Temperature
-
125
-
℃
①
-
25
-
℃
①
TTSD−TTSR
290
430
610
Ω
①
VCEH
VBIAS=3.6V, VIN= VOUT(T)+0.3V,
VCE= VSS, VOUT=VOUT(T)
VBIAS=3.6V, VIN= VOUT(T)+0.3V
0.75
-
6.0
V
①
-
-
0.16
V
①
2.4
-
8.0
μA
①
-0.1
-
0.1
-0.1
-
0.1
μA
①
Rdischg
CE "L" Level Voltage
VCEL
VBIAS=3.6V, VIN= VOUT(T)+0.3V
CE "H" Level Current
(A Series)
CE "H" Level Current
(B Series)
ICEH
VBIAS=VCE=6.0V,
VIN=VOUT(T)+0.3V
CE "L" Level Current
ICEL
VBIAS=6.0V, VCE=VSS
VIN=VOUT(T)+0.3V
NOTE:
(*3)
* 1: Please use Bias voltage VBIAS within the range VBIAS –VOUT(E) ≧1.2V
* 2: Please use Input voltage VIN within the range VIN≦VBIAS
* 3: VOUT(E) = Effective output voltage (Refer to the voltage chart E-0 and E-1)
* 4: VOUT (T) = Specified output voltage
* 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART
* 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART
(*8)
(*9)
* 7: Vdif = {VIN1 -VOUT1 }.
* 8: VIN1 = The input voltage when VOUT1 appears as input voltage is gradually decreased.
* 9: VOUT1 = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when VIN=VBIAS at VBIAS<3.0V, and
VIN=3.0V at VBIAS≧3.0V is input to the VIN pin.
* 10: IBIASMAX = A supply current at the VBIAS pin providing for the output current (IOUT) .
■OUTPUT VOLTAGE CHART
NOMINAL
OUTPUT
VOLTAGE (V)
E-0
OUTPUT VOLTAGE (V)
VOUT
NOMINAL
OUTPUT
VOLTAGE (V)
E-0
OUTPUT VOLTAGE (V)
VOUT
VOUT(T)
MIN.
MAX.
VOUT(T)
MIN.
MAX.
0.70
0.680
0.720
1.30
1.280
1.320
0.75
0.730
0.770
1.35
1.330
1.370
0.80
0.780
0.820
1.40
1.380
1.420
0.85
0.830
0.870
1.45
1.430
1.470
0.90
0.880
0.920
1.50
1.480
1.520
0.95
0.930
0.970
1.55
1.530
1.570
1.00
0.980
1.020
1.60
1.580
1.620
1.05
1.030
1.070
1.65
1.630
1.670
1.10
1.080
1.120
1.70
1.680
1.720
1.15
1.130
1.170
1.75
1.730
1.770
1.20
1.180
1.220
1.80
1.780
1.820
1.25
1.230
1.270
6/32
XC6601
Series
■DROPOUT VOLTAGE CHART
NOMINAL
OUTPUT
VOLTAGE (V)
VOUT(T)
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
VBIAS=3.0 (V)
Vdif(mV)
Vgs(*1)
(V)
TYP. MAX.
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
40
41
42
300
250
200
150
100
43
68
46
72
48
75
51
81
54
87
57
92
61
63
67
70
74
79
94
97
104
113
131
154
E-1
DROPOUT VOLTAGE 1 (mV)
Vdif 1
VBIAS=3.3 (V)
VBIAS=3.6 (V)
VBIAS=4.2 (V)
Vgs
Vdif(mV)
Vgs
Vdif(mV)
Vgs
Vdif(mV)
(V) TYP. MAX. (V) TYP. MAX. (V)
TYP. MAX.
VBIAS=5.0 (V)
Vgs
Vdif(mV)
(V)
TYP. MAX.
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
4.30
4.25
4.20
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
35
36
38
300
250
200
150
100
40
61
41
63
42
65
43
68
46
72
48
75
51
81
54
87
57
92
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
33
34
34
300
250
200
150
100
35
56
36
58
38
59
40
61
41
63
42
65
43
68
46
72
48
75
3.50
3.45
3.40
3.35
3.30
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
30
31
31
32
300
250
200
150
100
50
49
32
50
32
51
33
52
34
53
34
54
35
56
36
58
38
59
27
28
28
28
300
250
200
150
100
50
44
29
45
29
46
29
47
30
47
30
48
31
48
31
49
32
49
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
7/32
XC6601 Series
■DROPOUT VOLTAGE CHART (Continued)
E-2
NOMINAL
OUTPUT
VOLTAGE (V)
DROPOUT VOLTAGE 2 (mV)
Vdif 2
VBIAS =3.0(V)
(*1)
VOUT (T)
Vgs
(V)
0.70
2.30
0.75
2.25
0.80
2.20
0.85
2.15
0.90
2.10
0.95
2.05
1.00
2.00
1.05
1.95
1.10
1.90
1.15
1.85
1.20
1.80
1.25
1.75
1.30
1.70
1.35
1.65
1.40
1.60
1.45
1.55
1.50
1.50
1.55
Vdif(mV)
TYP.
81
85
88
VBIAS =3.3(V)
Vdif(mV)
MAX.
Vgs
(V)
TYP.
74
300
2.60
250
2.55
200
2.50
150
2.45
131
2.40
2.35
90
139
96
146
101
154
108
170
115
179
122
192
1.45
129
197
1.75
1.60
1.40
135
206
1.70
1.65
1.35
145
223
1.65
1.70
1.30
154
248
1.60
1.75
1.25
165
293
1.55
1.80
1.20
175
353
1.50
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
76
78
MAX.
VBIAS =3.6(V)
TYP.
68
300
2.90
2.85
200
2.80
150
2.75
117
2.70
81
123
85
127
88
131
90
139
96
146
101
154
108
170
115
179
122
192
Vdif(mV)
Vgs
(V)
250
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
VBIAS =4.2(V)
70
72
Vdif(mV)
MAX.
Vgs
(V)
TYP.
62
300
3.50
250
3.45
200
3.40
150
3.35
110
74
111
76
114
78
117
81
123
85
127
88
131
90
139
96
146
101
154
3.30
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
63
63
Vdif(mV)
MAX.
Vgs
(V)
TYP.
MAX.
300
4.30
57
300
250
4.25
200
4.20
150
4.15
100
64
98
65
101
67
103
68
106
70
108
72
110
74
111
76
114
78
117
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
8/32
VBIAS =5.0(V)
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
58
58
250
200
150
100
58
88
59
90
59
91
60
92
61
93
62
94
63
95
63
97
64
98
XC6601
Series
■DROPOUT VOLTAGE CHART (Continued)
E-3
NOMINAL
OUTPUT
VOLTAGE (V)
DROPOUT VOLTAGE 3 (mV)
Vdif 3
VBIAS =3.0(V)
(*1)
VOUT (T)
Vgs
(V)
0.70
2.30
0.75
2.25
0.80
2.20
0.85
2.15
0.90
2.10
0.95
2.05
1.00
2.00
1.05
1.95
1.10
1.90
1.15
1.85
1.20
1.80
1.25
1.75
1.30
1.70
1.35
1.65
1.40
1.60
1.45
1.55
1.50
1.50
1.55
VBIAS =3.3(V)
Vdif(mV)
TYP.
130
134
138
MAX.
TYP.
115
300
2.60
250
2.55
200
2.50
204
Vdif(mV)
Vgs
(V)
2.45
2.40
2.35
145
216
153
227
161
239
173
264
184
289
196
313
1.45
209
323
1.75
1.60
1.40
222
344
1.70
1.65
1.35
239
388
1.65
1.70
1.30
256
442
1.60
1.75
1.25
1.80
1.20
-
-
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.55
1.50
117
119
VBIAS =3.6(V)
Vdif(mV)
MAX.
Vgs
(V)
TYP.
300
2.90
107
250
2.85
200
2.80
181
130
190
134
197
138
204
145
216
153
227
161
239
173
264
184
289
196
313
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
VBIAS =4.2(V)
109
111
Vdif(mV)
MAX.
Vgs
(V)
TYP.
300
3.50
95
250
3.45
200
3.40
167
115
170
117
176
119
181
130
190
134
197
138
204
145
216
153
227
161
239
3.35
3.30
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
96
97
VBIAS =5.0(V)
Vdif(mV)
MAX.
Vgs
(V)
TYP.
MAX.
300
4.30
89
300
250
4.25
200
4.20
150
4.15
148
98
151
101
153
105
155
107
159
109
163
111
167
115
170
117
176
119
181
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
90
90
250
200
150
132
91
134
92
137
93
139
93
140
94
141
95
142
96
145
97
148
98
151
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
9/32
XC6601 Series
■DROPOUT VOLTAGE CHART (Continued)
E-4
NOMINAL
OUTPUT
VOLTAGE (V)
DROPOUT VOLTAGE 4 (mV)
Vdif 4
VBIAS =3.0(V)
(*1)
VOUT (T)
Vgs
(V)
0.70
2.30
0.75
2.25
0.80
2.20
0.85
2.15
0.90
2.10
0.95
2.05
1.00
2.00
1.05
1.95
1.10
1.90
1.15
1.85
1.20
1.80
1.25
1.75
1.30
1.70
1.35
1.65
1.40
1.60
1.45
1.55
1.50
1.50
1.55
1.45
1.60
1.40
1.65
1.35
1.70
1.30
1.75
1.25
1.80
1.20
VBIAS =3.3(V)
Vdif(mV)
TYP.
MAX.
189
300
195
277
201
277
206
277
218
277
231
227
334
248
376
264
418
281
460
-
-
-
-
-
-
Vdif(mV)
Vgs
(V)
TYP.
MAX.
2.60
157
300
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
164
272
170
272
189
272
195
272
201
272
277
206
296
218
315
231
334
248
376
264
418
281
460
VBIAS =3.6(V)
VBIAS =4.2(V)
Vdif(mV)
Vgs
(V)
TYP.
MAX.
2.90
146
300
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
150
250
153
250
157
250
164
250
170
250
248
189
255
195
266
201
277
206
296
218
315
231
334
TYP.
3.50
129
3.45
3.40
3.35
3.30
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
10/32
Vdif(mV)
Vgs
(V)
131
MAX.
TYP.
MAX.
116
300
300
4.30
4.25
246
4.20
246
136
246
139
246
246
215
146
219
150
224
153
228
157
234
164
241
170
248
Vdif(mV)
Vgs
(V)
250
134
142
VBIAS =5.0(V)
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
118
250
231
119
231
121
231
125
231
128
231
189
128
191
129
193
129
195
131
198
134
202
136
205
XC6601
Series
■OPERATIONAL EXPLANATION
<Voltage Regulator>
The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel
MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is
controlled & stabilized by a system of negative feedback.
VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase,
the VBIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current.
In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VOUT(T)) of the driver
transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of
thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN voltage goes lower than UVLO voltage.
Further, the IC's internal circuitry can be shutdown via the CE pin's signal.
XC6601A series
<Low ESR Capacitor>
With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation
circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase
compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0μF between the V BIAS pin and the VSS pin. Also,
please connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase
compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or
temperature too much. The table below shows recommended values of CBIAS, CIN, CL.
SETTING VOLTAGE
0.7V～1.8V
BIAS CAPACITOR
CBIAS
CBIAS=1.0μF
INPUT CAPACITOR
CIN
CIN=1.0μF
OUTPUT CAPACITOR
CL
CL=4.7μF
Recommended Values of CBIAS, CIN, CL
11/32
XC6601 Series
■OPERATIONAL EXPLANATION (Continued)
<CL High Speed Auto-Discharge>
XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which
enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS
pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction.
At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL
auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R]
and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated
by the following formulas.
V = VOUT x e –t/τ, or ｔ=τln（ VOUT(E) / V ）
V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time,
τ: CL auto-discharge resistance R×Output capacitor (CL) value C
<Current Limit, Short-Circuit Protection>
The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load
current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is
shorted to the VSS level, current flows about 80mA.
<Thermal Shutdown Circuit (TSD) >
When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal
shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown
function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the
thermal shutdown release temperature (125℃ TYP.).
<Under Voltage Lock Out (UVLO) >
When the VBIAS pin voltage drops below 2.0V (TYP.) or VIN pin voltage drops below 0.4V (TYP.), the output driver transistor is
forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin
voltage rise at 2.2V (TYP.) or the VIN pin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is
turned in the ON state and start to operate voltage regulation.
<CE Pin>
The IC internal circuitry can be shutdown via the signal from the CE pin with the XC6601 series. In shutdown mode, output at the
VOUT pin will be pulled down to the VSS level via R1 & R2. However, as for the XC6601 series, the CL auto-discharge resistor is
connected in parallel to R1 and R2 while the power supply is applied to the VIN pin. Therefore, time until the VOUT pin reaches the
VSS level becomes short.
The CE pin of XC6601A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC6601B
does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from VBIAS pin
or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current
in the IC's internal circuitry when medium voltage is input.
■NOTE ON USE
1.
2.
3.
4.
5.
6.
Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be
exceeded.
Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low between VBIAS and VSS wiring or VIN and VSS wiring in particular.
Please wire the bias capacitor (CBIAS), input capacitor (CIN) and the output capacitor (CL) as close to the IC as possible.
Capacitance values of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient
temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR
influence.
In case of the output capacitor more than CL=22μF is used, ringing of input current occurs when rising time.
VIN and CE should be applied at least 10μs after the bias voltage VBIAS reaches the requested voltage.
If VIN and CE are applied within 10μs, inrush current like 1A may occurs.
12/32
XC6601
Series
■TEST CIRCUITS
Circuit ①
Circuit ②
13/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS
（1） Output Voltage vs. Output Current
XC6601B071MR
XC6601B071MR
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
0.8
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
0.8
0.6
Ta=-40℃
Ta=25℃
Ta=85℃
0.4
0.2
0.0
0.6
VIN=1.0V
VIN=1.2V
VIN=1.5V
0.4
0.2
0.0
0
100
200
300
400
500
600
700
0
100
200 300 400 500 600
Output Current: IOUT(mA)
Output Current: IOUT(mA)
XC6601B121MR
XC6601B121MR
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
1.4
1.4
1.2
1.2
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
1.0
Ta=-40℃
Ta=25℃
Ta=85℃
0.8
0.6
0.4
0.2
1.0
VIN=1.3V
VIN=1.5V
0.8
VIN=1.8V
0.6
0.4
0.2
0.0
0.0
0
100
200
300
400
500
600
0
700
100
200
Output Current: IOUT(mA)
Ta=25℃
Ta=85℃
100
200 300 400 500 600
Output Current: IOUT(mA)
500
600
700
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
Ta=-40℃
0
400
XC6601B181MR
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
Output Current: IOUT(mA)
XC6601B181MR
14/32
700
700
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VIN=1.9V
VIN=2.1V
VIN=2.3V
0
100
200 300 400 500 600
Output Current: IOUT(mA)
700
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
（2） Output Voltage vs. Bias Voltage
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=1.0V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=1.0V, Ta=25℃
0.9
0.9
IOUT=0mA
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
IOUT=0mA
IOUT=30mA
0.8
IOUT=100mA
0.7
0.6
IOUT=30mA
0.8
IOUT=100mA
0.7
0.6
0.5
0.5
1.7
1.9
2.1
2.3
2.5
2.5
3
3.5
4.5
5
XC6601x121
6
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=1.5V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=1.5V, Ta=25℃
1.4
1.4
Output Voltage: VOUT(V)
IOUT=0mA
IOUT=30mA
1.3
IOUT=100mA
1.2
1.1
1.0
IOUT=0mA
IOUT=30mA
1.3
IOUT=100mA
1.2
1.1
1.0
1.7
1.9
2.1
2.3
2.5
2.5
3
Bias Voltage: VBIAS(V)
3.5
4
4.5
5
5.5
6
Bias Voltage: VBIAS(V)
XC6601x181
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=2.1V, Ta=25℃
VIN=2.1V, Ta=25℃
2.0
2.0
Output Voltage: VOUT(V)
IOUT=0mA
Output Voltage: VOUT(V)
5.5
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
Output Voltage: VOUT(V)
4
IOUT=30mA
IOUT=100mA
1.9
1.8
1.7
1.6
IOUT=0mA
IOUT=30mA
1.9
IOUT=100mA
1.8
1.7
1.6
1.8
2
2.2
2.4
2.6
Bias Voltage: VBIAS(V)
2.8
3
3
3.5
4
4.5
5
5.5
6
Bias Voltage: VBIAS(V)
15/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Output Voltage vs. Input Voltage
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
VBIAS=3.6V, Ta=25℃
0.9
0.9
IOUT=0mA
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
IOUT=0mA
IOUT=30mA
0.8
IOUT=100mA
0.7
0.6
IOUT=30mA
0.8
IOUT=100mA
0.7
0.6
0.5
0.5
0.5
0.6
0.7
0.8
1
0.9
1.2 1.4 1.6 1.8
2.2 2.4 2.6 2.8
Bias Voltage: VBIAS(V)
XC6601x121
XC6601x121
VBIAS=3.6V, Ta=25℃
1.4
1.4
Output Voltage: VOUT(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
1.3
1.2
1.1
1.0
IOUT=0mA
IOUT=30mA
IOUT=100mA
1.3
1.2
1.1
1.0
1
1.1
1.2
1.3
1.4
1.4
1.6
1.8
Bias Voltage: VBIAS(V)
2
2.2
2.4
2.8
3
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
VBIAS=3.6V, Ta=25℃
2.0
2.0
IOUT=0mA
IOUT=0mA
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
2.6
Bias Voltage: VBIAS(V)
XC6601x181
IOUT=30mA
1.9
IOUT=100mA
1.8
1.7
1.6
IOUT=30mA
1.9
IOUT=100mA
1.8
1.7
1.6
1.6
1.7
1.8
1.9
Bias Voltage: VBIAS(V)
16/32
3
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
Output Voltage: VOUT(V)
2
Bias Voltage: VBIAS(V)
2
2
2.2
2.4
2.6
Bias Voltage: VBIAS(V)
2.8
3
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
（4）Dropout Voltage vs. Output Current
XC6601B121MR
XC6601B121MR (Vgs(*1)=2.4V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
Ta=25℃
VBIAS=3.6V
400
Dropout Voltage: Vdif(mV)
Dropout Voltage: Vdif(mV)
300
VBIAS=3.0V
VBIAS=3.3V
250
200
VBIAS=3.6V
VBIAS=4.2V
150
VBIAS=5.0V
100
50
Ta=-40℃
300
Ta=25℃
Ta=85℃
200
100
0
0
0
100
200
300
Output Current: IOUT(mA)
0
400
XC6601B121MR (Vgs(*1)=1.8V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.0V
VBIAS=4.2V
400
Dropout Voltage: Vdif(mV)
Dropout Voltage: Vdif(mV)
400
XC6601B121MR (Vgs(*1)=3.0V)
400
Ta=-40℃
300
Ta=25℃
Ta=85℃
200
100
0
Ta=-40℃
300
Ta=25℃
Ta=85℃
200
100
0
0
100
200
300
Output Current: IOUT(mA)
400
0
XC6601B121MR (Vgs(*1)=2.1V)
100
200
300
Output Current: IOUT(mA)
400
XC6601B121MR (Vgs(*1)=3.8V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.3V
VBIAS=5.0V
400
Dropout Voltage: Vdif(mV)
400
Dropout Voltage: Vdif(mV)
100
200
300
Output Current: IOUT(mA)
Ta=-40℃
300
Ta=25℃
Ta=85℃
200
100
0
Ta=-40℃
300
Ta=25℃
Ta=85℃
200
100
0
0
100
200
300
Output Current: IOUT(mA)
400
0
100
200
300
Output Current: IOUT(mA)
400
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
A value of the dropout voltage is determined by the value of the Vgs.
17/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(6) Supply Input Current vs. Input Voltage
(5) Supply Bias Current vs. Bias Voltage
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
40
Supply Input Current: IIN(μA)
Supply Bias Current: IBIAS(μA)
VIN=1.0V
30
20
Ta=-40℃
10
Ta=25℃
Ta=85℃
0
0
1
2
3
4
5
2.0
Ta=-40℃
Ta=25℃
1.5
Ta=85℃
1.0
0.5
0.0
0
6
0.5
Bias Voltage: VBIAS(V)
1
1.5
XC6601x121
20
Ta=-40℃
Ta=25℃
10
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V
Supply Input Current: IIN(μA)
Supply Bias Current: IBIAS(μA)
30
Ta=85℃
0
2
3
4
5
3.0
Ta=-40℃
2.5
Ta=25℃
2.0
Ta=85℃
1.5
1.0
0.5
0.0
0
6
0.5
Bias Voltage: VBIAS(V)
1
XC6601x181
2
2.5
3
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V
40
4.0
Supply Input Current: IIN(μA)
Supply Bias Current: IBIAS(μA)
1.5
Input Voltage: VIN(V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=2.1V
30
20
Ta=-40℃
10
Ta=25℃
Ta=85℃
0
3.5
3.0
2.5
2.0
1.5
Ta=-40℃
1.0
Ta=25℃
0.5
Ta=85℃
0.0
0
1
2
3
4
Bias Voltage: VBIAS(V)
18/32
3
XC6601x121
40
1
2.5
Input Voltage: VIN(V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VIN=1.5V
0
2
5
6
0
0.5
1
1.5
2
Input Voltage: VIN(V)
2.5
3
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Output Voltage vs. Ambient Temperature
(8) Supply Bias Current vs. Ambient Temperature
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
Supply Bias Current: IBIAS(μA)
Output Voltage: VOUT(V)
0.73
0.72
0.71
0.70
0.69
IOUT=1mA
IOUT=30mA
0.68
IOUT=100mA
0.67
-50
-25
0
25
50
75
40
35
30
25
20
15
-50
100
-25
1.22
1.21
1.20
1.19
IOUT=1mA
IOUT=30mA
IOUT=100mA
1.18
1.17
25
75
100
50
75
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
Supply Bias Current: IBIAS(μA)
Output Voltage: VOUT(V)
1.23
0
50
XC6601x121
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
-25
25
Ambient Temperature: Ta(℃)
Ambient Temperature: Ta(℃)
-50
0
40
35
30
25
20
15
-50
100
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
Ambient Temperature: Ta(℃)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
1.82
1.81
1.80
1.79
IOUT=1mA
IOUT=30mA
1.78
IOUT=100mA
1.77
-50
-25
0
25
50
75
Ambient Temperature: Ta(℃)
100
Supply Bias Current: IBIAS(μA)
Output Voltage: VOUT(V)
1.83
40
35
30
25
20
15
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
19/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Supply Input Current vs. Ambient Temperature
XC6601x071
Supply Input Current: IIN(μA)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
XC6601x121
Supply Input Current: IIN(μA)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
Supply Input Current: IIN(μA)
VBIAS=3.6V, VIN=2.1V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
Ambient Temperature: Ta(℃)
20/32
100
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(10) Bias Transient Response
XC6601x071
XC6601x071
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.0V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
1.1
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), C L=4.7μF(ceramic)
VIN =1.0V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
5
1.1
0.9
3
0.8
2
0.7
1
Output Voltage
0.6
0.5
1.0
4
0.9
3
0.8
2
0.7
1
0
0.6
-1
0.5
Time (40usec/div)
XC6601x121
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), C L=4.7μF(ceramic)
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.5V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
5
VIN =1.5V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
1.6
5
4
1.4
3
1.3
2
1.2
1
Output Voltage
1.0
1.5
4
1.4
3
1.3
2
1.2
1
0
1.1
-1
1.0
Time (40usec/div)
Output Voltage
Bias Voltage V BIAS(V)
1.5
Output Voltage V OUT(V)
Bias Voltage
Bias Voltage V BIAS(V)
0
-1
Time (40usec/div)
Time (40μs / div)
Time (40μs / div)
XC6601x181
XC6601x181
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), CL=4.7μF(ceramic)
CIN =1.0μF(ceramic), C BIAS=0μF(ceramic), C L=4.7μF(ceramic)
VIN =2.1V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
2.2
VIN =2.1V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
5
2.1
5
2.1
4
2.0
3
1.9
2
1.8
1
Output Voltage
1.6
Time (40usec/div)
Time (40μs / div)
Output Voltage V OUT(V)
Bias Voltage
Bias Voltage V BIAS(V)
Bias Voltage
2.0
4
1.9
3
1.8
2
1.7
1
0
1.6
-1
1.5
Output Voltage
Bias Voltage V BIAS(V)
Output Voltage V OUT(V)
Bias Voltage
Output Voltage V OUT(V)
-1
Time (40μs / div)
XC6601x121
1.7
0
Time (40usec/div)
Time (40μs / div)
1.1
Output Voltage
Bias Voltage V BIAS(V)
4
Output Voltage V OUT(V)
1.0
1.6
5
Bias Voltage
Bias Voltage V BIAS(V)
Output Voltage V OUT(V)
Bias Voltage
0
-1
Time (40usec/div)
Time (40μs / div)
21/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Input Transient Response
XC6601x071
XC6601x071
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
3
1.1
2
0.9
1
0.8
0
0.7
-1
1.0
2
0.9
1
0.8
0
0.7
-1
Output Voltage
Output Voltage
0.5
-2
0.6
-3
0.5
Time (20usec/div)
Time (20μs / div)
XC6601x121
XC6601x121
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
4
1.6
1.4
2
1.3
1
1.2
0
Output Voltage VROUT(V)
3
1.5
3
1.4
2
1.3
1
1.2
0
Output Voltage
1.0
-1
1.1
-2
1.0
Time (20usec/div)
XC6601x181
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
2.2
4
2.0
3
1.9
2
1.8
1
Time (20usec/div)
22/32
Output Voltage V OUT(V)
2.1
Time (20μs / div)
5
Input Voltage
Input Voltage V IN (V)
Output Voltage V OUT(V)
Input Voltage
1.6
-2
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
5
Output Voltage
-1
Time (20μs / div)
XC6601x181
1.7
Output Voltage
Time (20usec/div)
Time (20μs / div)
2.2
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
4
Input Voltage
1.5
Input Voltage V IN (V)
Output Voltage V OUT(V)
Input Voltage
1.1
-3
Time (20usec/div)
Time (20μs / div)
1.6
-2
Input Voltage V IN (V)
0.6
Input Voltage V IN (V)
1.0
Output Voltage V OUT(V)
Input Voltage
Input Voltage V IN (V)
Output Voltage V OUT(V)
Input Voltage
2.1
4
2.0
3
1.9
2
1.8
1
0
1.7
-1
1.6
Output Voltage
0
-1
Time (20usec/div)
Time (20μs / div)
Input Voltage V IN (V)
1.1
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
3
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(12) Load Transient Response
XC6601B071MR
XC6601B071MR
C IN =C BIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
C IN =CBIAS=1.0μF(ceramic), C L=4.7μF(ceramic)
VBIAS=3.6V, VIN =1.0V, tr=tf=5.0μsec, Ta=25℃
VBIAS=3.6V, VIN =1.0V, tr=tf=5.0μsec, Ta=25℃
0.9
500
300
0.3
200
Output Current
100mA
100
0.7
400
0.5
300
200mA
0.3
100
10mA
-0.1
0
Time (45μs / div)
Time (45μs / div)
XC6601B121MR
XC6601B121MR
CIN =CBIAS=1.0μF(ceramic), C L=4.7μF(ceramic)
C IN =C BIAS=1.0μF(ceramic), CL =4.7μF(ceramic)
VBIAS=3.6V, VIN =1.5V, tr=tf=5.0μsec, Ta=25℃
1.4
VBIAS=3.6V, VIN =1.5V, tr=tf=5.0μsec, Ta=25℃
500
1.4
500
Output Voltage
1.0
300
0.8
200
Output Current
100mA
1.2
400
1.0
300
200mA
0.8
100
0.6
0
0.4
100
10mA
Time (45μs / div)
XC6601B181MR
XC6601B181MR
CIN =CBIAS=1.0μF(ceramic), C L=4.7μF(ceramic)
C IN =C BIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =2.1V, tr=tf=5.0μsec, Ta=25℃
2.0
VBIAS=3.6V, VIN =2.1V, tr=tf=5.0μsec, Ta=25℃
500
2.0
500
Output Voltage
400
1.6
300
1.4
200
Output Current IOUT(mA)
1.8
Output Current
100mA
Output Voltage V OUT(V)
Output Voltage
Output Voltage V OUT(V)
0
Time (45usec/div)
(45usec/div)
TimeTime
(45μs
/ div)
1.2
1.8
400
1.6
300
200mA
1.4
Time (45usec/div)
Time (45μs / div)
200
Output Current
100
1.2
0
1.0
100
10mA
1.0
200
Output Current
10mA
0.4
Output Current IOUT(mA)
400
Output Current IOUT(mA)
1.2
Output Voltage V OUT(V)
Output Voltage
Output Voltage V OUT(V)
0
Time (45usec/div)
Time (45usec/div)
0.6
200
Output Current
0.1
10mA
-0.1
Output Current IOUT(mA)
0.5
Output Voltage V OUT(V)
400
Output Current IOUT(mA)
Output Voltage V OUT(V)
0.7
0.1
500
Output Voltage
Output Voltage
Output Current IOUT(mA)
0.9
10mA
0
Time (45usec/div)
Time (45μs / div)
23/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) CE Rising Response Time
XC6601x071
XC6601x071
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
3
2.5
1.5
1
Output Voltage
0.5
0.0
0
Output Voltage V OUT(V)
2
CE Input Voltage V CE(V)
2.0
2
1.5
1
1.0
-1
0.5
-2
0.0
Time (100usec/div)
XC6601x121
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.5V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
2.5
4
3.0
3
2.5
1.5
Output Voltage
1
1.0
0
0.5
0.0
Output Voltage V OUT(V)
2
CE Input Voltage V CE(V)
2.0
1
0
-1
0.5
-1
-2
0.0
-2
Time (100usec/div)
Time (100μs / div)
XC6601x181
XC6601x181
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
2.5
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
3.0
3
2.5
2
1.5
1
1.0
0
Output Voltage
Output Voltage V OUT(V)
2.0
CE Input Voltage V CE(V)
CE Input Voltage
Time (100usec/div)
Output Voltage
1.0
VIN =2.1V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
4
Time (100μs / div)
2
1.5
Time (100μs / div)
0.0
3
2.0
Time (100usec/div)
0.5
4
CE Input Voltage
CE Input Voltage
Output Voltage V OUT(V)
-2
VIN =1.5V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
3.0
Output Voltage V OUT(V)
-1
Time (100μs / div)
XC6601x121
24/32
0
Time (100usec/div)
Time (100μs / div)
3.0
Output Voltage
CE Input Voltage V CE(V)
Output Voltage V OUT(V)
2.0
1.0
3
CE Input Voltage
CE Input Voltage
CE Input Voltage V CE(V)
2.5
3.0
VIN =1.0V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
4
VIN =2.1V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
4
CE Input Voltage
3
2.0
2
1.5
1
1.0
0
-1
0.5
-2
0.0
Output Voltage
-1
-2
Time (100usec/div)
Time (100μs / div)
CE Input Voltage V CE(V)
3.0
VIN =1.0V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
4
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) VIN Rising Response Time
XC6601x071
XC6601x071
2.0
2.5
2
2.0
Output Voltage
0.5
0.0
0
1.5
-1
0.5
-2
0.0
Output Voltage
0
-1
-2
Time (100usec/div)
Time (100μs / div)
Time (100μs / div)
XC6601x121
XC6601x121
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
2.5
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
3
2.5
2
2.0
1
Output Voltage
1.0
0
0.5
0.0
Output Voltage V OUT(V)
1.5
Input Voltage V IN (V)
Input Voltage
2.0
Output Voltage V OUT(V)
2
1
1.0
Time (100usec/div)
3
Input Voltage
1.5
2
1
Output Voltage
1.0
0
-1
0.5
-1
-2
0.0
Time (100usec/div)
-2
Time (100usec/div)
Time (100μs / div)
Time (100μs / div)
XC6601x181
XC6601x181
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
2.5
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
3
2.5
2.0
2
2.0
2
1.5
1
1.5
1
1.0
0
1.0
0
Input Voltage
0.5
Output Voltage
0.0
Time (100usec/div)
Time (100μs / div)
3
Output Voltage V OUT(V)
Input Voltage
Input Voltage V IN (V)
Output Voltage V OUT(V)
Input Voltage
Input Voltage V IN (V)
1.0
1
Output Voltage V OUT(V)
1.5
Input Voltage V IN (V)
Output Voltage V OUT(V)
Input Voltage
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
3
-1
0.5
-2
0.0
Output Voltage
Input Voltage V IN (V)
2.5
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
3
Input Voltage V IN (V)
CIN =0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
-1
-2
Time (100usec/div)
Time (100μs / div)
25/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(16) Input Voltage Ripple Rejection Rate
(15) Bias Voltage Ripple Rejection Rate
XC6601x071
CBIAS=0μF, CIN=1.0μF(ceramic), CL =4.7μF(ceramic)
CBIAS=1.0μF(ceramic), CIN=0μF, CL =4.7μF(ceramic)
VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.0V, IOUT=30mA, Ta=25℃
VBIAS=3.6V, VIN=1.0VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
80
80
70
70
60
60
50
VIN_PSRR(dB)
VBIAS_PSRR(dB)
XC6601x071
40
30
50
40
30
20
20
10
10
0
0.01
0.1
1
10
100
0
0.01
1000 10000
0.1
1
Frequency (kHz)
CBIAS=0μF, CIN=1.0μF(ceramic), CL =4.7μF(ceramic)
CBIAS=1.0μF(ceramic), CIN=0μF, CL =4.7μF(ceramic)
80
70
70
60
60
VIN_PSRR(dB)
VBIAS_PSRR(dB)
VBIAS=3.6V, VIN=1.5VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
80
50
40
30
20
10
100
50
40
30
20
10
0
0.01
10
1
1000 10000
0.1
1
100
1000 10000
XC6601x181
CBIAS=0μF, CIN=1.0μF(ceramic), CL =4.7μF(ceramic)
CBIAS=1.0μF(ceramic), CIN=0μF, CL =4.7μF(ceramic)
VBIAS=3.6VDC+0.2Vp-pAC, VIN=2.1V, IOUT=30mA, Ta=25℃
VBIAS=3.6V, VIN=2.1VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
80
80
70
70
60
60
50
VIN_PSRR(dB)
VBIAS_PSRR(dB)
XC6601x181
50
40
30
40
30
20
10
20
10
0.1
1
10
100
Frequency (kHz)
26/32
10
Frequency (kHz)
Frequency (kHz)
0
0.01
1000 10000
XC6601x121
VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.5V, IOUT=30mA, Ta=25℃
0.1
100
Frequency (kHz)
XC6601x121
0
0.01
10
1000 10000
0
0.01
0.1
1
10
100
Frequency (kHz)
1000 10000
XC6601
Series
■PACKAGING INFORMATION
●USP-6C Reference Pattern Layout
●USP-6C
< USP-6C 推奨マウントパッド寸法　（ 参照） >
(UNIT : mm)
2.4
0.45
0.45
1
6
2
5
3
4
0.05
0.05
1.0
< USP-6C Reference
推奨メタルマスクデザイン　（ 参照
）>
●USP-6C
Metal Mask
Design
2.3
0.35
0.35
1
6
2
5
3
4
0.15
0.15
0.8
Thickness
of solder paste: 120μm
・はんだ厚:120μm
(参考) (reference)
●SOT-25
●SOT-89-5
(UNIT : mm)
5°
M IN 0.8
（0.4）
（0.4）
（1.8）
（0.3）
nickel is used: Sn 5∼15μm
(0.1)
*The side of pins are not gilded, but
1.5±0.1
1.1±0.1
1.3 MAX
M IN 0.8
5°
M A X 4 .5
2.5±0.1
0.2 MIN
2.8±0.2
+0.2
1.6 -0.1
(UNIT : mm)
27/32
XC6601 Series
■PACKAGING INFORMATION (Continued)
USP-6C Power Dissipation
●
Power dissipation data for the USP-6C is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1.
Measurement Condition (Reference data)
Condition:
Mount on a board
Ambient:
Natural convection
Soldering:
Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm in one side)
2
Copper (Cu) traces occupy 50% of the board area
て
In top and back faces
Package heat-sink is tied to the copper traces
Material:
Glass Epoxy (FR-4)
Thickness:
1.6 mm
Through-hole: 4 x 0.8 Diameter
2.
Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
Board Mount (Tj max = 125℃)
Ambient Temperature（℃）
Power Dissipation Pd（mW）
25
1000
85
400
Thermal Resistance (℃/W)
100.00
許容損失Pd（mW）
Power Dissipation Pd (mW)
Pd-Ta特性グラフ
Pd vs. Ta
1200
1000
800
600
400
200
0
25
28/32
45
65
85
Ambient
Temperature Ta (℃)
周辺温度Ta（℃）
105
125
XC6601
Series
■PACKAGING INFORMATION (Continued)
●
SOT-25 Power Dissipation
Power dissipation data for the SOT-25 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
2.
Measurement Condition (Reference data)
Condition:
Mount on a board
Ambient:
Natural convection
Soldering:
Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm in one side)
2
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
(Board of SOT-26 is used.)
Material:
Glass Epoxy (FR-4)
Thickness:
1.6 mm
Through-hole: 4 x 0.8 Diameter
Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
評価基板レイアウト（単位：mm）
Board Mount (Tj max = 125℃)
Ambient Temperature（℃）
Power Dissipation Pd（mW）
25
600
85
240
Thermal Resistance (℃/W)
166.67
Pd-Ta特性グラフ
Pd vs. Ta
許容損失Pd（mW）
Power Dissipation Pd (mW)
2.
700
600
500
400
300
200
100
0
25
45
65
85
Ambient
Temperature Ta (℃)
周辺温度Ta（℃）
105
125
29/32
XC6601 Series
■PACKAGING INFORMATION (Continued)
●
SOT-89-5 Power Dissipation
Power dissipation data for the SOT-89-5 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
3.
Measurement Condition (Reference data)
Condition:
Mount on a board
Ambient:
Natural convection
Soldering:
Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm in one side)
2
て
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
Material:
Glass Epoxy (FR-4)
Thickness:
1.6 mm
Through-hole: 5 x 0.8 Diameter
2.
Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
Board Mount (Tj max = 125℃)
Ambient Temperature（℃）
Power Dissipation Pd（mW）
25
1300
85
520
Thermal Resistance (℃/W)
76.92
許容損失Pd（mW）
Power Dissipation Pd (mW)
Pd-Ta特性グラフ
Pd vs. Ta
1400
1200
1000
800
600
400
200
0
25
30/32
45
65
85
Ambient
Temperature Ta (℃)
周辺温度Ta（℃）
105
125
XC6601
Series
■MARKING RULE
●SOT25, 89-5, USP6C
① Represents product series
SOT25
5
①
4
②
③
1
④
2
⑤
3
2
③
⑤
④
4
① ②
1
2
PRODUCT SERIES
9
XC6601******
② Represents type of regulators
SOT89-5
5
MARK
MARK
OUTPUT VOLTAGE RANGE
A
B
XC6601A*****
XC6601B*****
③ Represents output voltage
MARK
OUTPUT
VOLTAGE (V)
MARK
OUTPUT
VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
0.7
0.75
0.8
0.85
0.9
0.95
1.0
1.05
1.1
1.15
1.2
1.25
1.3
1.35
1.4
F
H
K
L
M
N
P
R
S
T
U
V
X
Y
Z
1.45
1.5
1.55
1.6
1.65
1.7
1.75
1.8
-
3
USP6C
①
④
②
⑤
③
④,⑤
Represents production lot number
01∼09、0A∼0Z、11･･･9Z、A1∼A9、
AA･･･Z9、ZA∼ZZ repeated
(G，I，J，O，Q，W excepted)
*No character inversion used.
31/32
XC6601 Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
32/32