XRN740-XXXX CALIFORNIA MICRO DEVICES Stable Extended Capability Chip Series California Micro Devices Hx (Stable Extended Capability Chip) Series offer exceptional stability and low noise. Available in the standard center tapped configuration, they have low electro migration qualities and extremely low TCR. Electrical Specifications Parameter Conditions TCR –55°C to 125°C ±100ppm Ma x TTCR –55°C to 125°C ± 5 p p m/ ° C Ma x Op e r a t i n g Vo l t a g e –55°C to 125°C 100Vdc Ma x Powe r Ra t i n g @ 7 0 ° C ( D e r a t e l i n e a r l y t o ze r o @ 1 5 0 ° C ) 1 2 5 mw Ma x Derat i on 3 0 ° C fo r 2 ye a r s ± 0 . 1 %∆ Ma x T h e r m a l S h o ck Me t h o d 1 0 7 MI L - STD- 2 0 2 F ± 0 . 2 %∆R Ma x Hi g h Te mp e r a t u r e Ex p o s u r e 1 0 0 Hr s @ 1 5 0 ° C Amb i e n t ±0.15% Ma x Mo i s t u r e Re s i s t a n c e Me t h o d 1 0 6 MI L - STD- 2 0 2 F ± 0 . 2 %∆R Ma x L i fe Noi se Me t h o d 1 0 8 MI L - STD- 2 0 2 F ( 1 2 5 ° C/ 1 0 0 0 h r ) Me t h o d 3 0 8 MI L - STD- 2 0 2 F u p t o 2 5 0 KΩ ≥250KΩ @2 5 ° C ± 0 . 2 %∆R –35dB –20dB 1 X 1 0 12Ω Ma x Ma x I nsul at i on Resi st ance Va l u e s Bonding Area R1 R2 Mi n 1MΩ to 20MΩ standard. Standard ratio tolerance between resistors = ±1%. Tighter ratio tolerance available. Laser Code Area Mechanical Specifications Formats Die Size: 45±3 mils square Bonding Pads: 4x4 mils typical Ω to 20 MΩ Ω 1 MΩ Notes Substrate Silicon 10±2 mils thick Isolation Layer Si02 10,000Å thick, min Resistor Proprietary Silicon Chrome Backing Lapped (gold optional) Bond Pads Aluminum 10,000Å thick, min 1. Code boxes are available for alphanumeric laser marking on the chip. Pa ck a g i n g Two inch square trays of 400 chips maximum is standard. 2. Resistor pattern may vary from one value to another. Pa r t N u m b e r D e s i g n a t i o n XRN740 1005 Series Resistance Value Fi rst 3 di gi t s are si gni fi cant va l u e . Last di gi t represents nu mb e r o f ze r o s. R i ndi cates d e c i ma l p o i n t . F A G W P Tolerance TCR Bond Pads Backing Ratio Tolerance D = ±0.5% No Let t er = ±100ppm G = Gol d W = Gol d St d = ±1% F = ±1% A = ±50ppm No Let t er = Al u mi nu m L = Lapped P = ±0.5% G = ±2% B = ±25ppm No Let t er = Ei t her J = ±5% K = ±10% C1360800 © 2000 California Micro Devices Corp. All rights reserved. 8/9/2000 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1